SUD50P06-15 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET® Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P06-15-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C V - 50d ID - 27.5 IDM - 80 IAS - 50 EAS 125 A mJ c 113 PD W 2.5b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.82 1.1 Unit °C/W Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 68940 S-82285-Rev. A, 22-Sep-08 www.vishay.com 1 SUD50P06-15 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100 VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 17 A RDS(on) ± 100 VDS = - 60 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea -3 - 50 0.025 VGS = - 10 V, ID = - 50 A, TJ = 150 °C 0.028 Forward Transconductance VDS = - 15 V, ID = - 17 A µA 0.015 VGS = - 10 V, ID = - 50 A, TJ = 125 °C gfs nA A 0.012 VGS = - 4.5 V, ID = - 14 A a V Ω 0.020 61 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 405 Total Gate Chargec Qg 110 c 4950 VGS = 0 V, VDS = - 25 V, f = 1 MHz Gate-Source Charge Qgs Gate-Drain Chargec Qgd 28 Turn-On Delay Timec td(on) 15 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = - 30 V, VGS = - 10 V, ID = - 50 A VDD = - 30 V, RL = 0.6 Ω ID ≅ - 50 A, VGEN = - 10 V, RG = 6 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 pF 480 165 nC 19 23 70 105 175 260 175 260 ns °Cb IS - 50 Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.6 V trr IF = - 50 A, dI/dt = 100 A/µs 45 70 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68940 S-82285-Rev. A, 22-Sep-08 SUD50P06-15 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 80 VGS = 10 thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 25 ° C 10 10 - 55 °C 0 0.0 0 0 1 2 3 4 5 0.5 Output Characteristics 2.0 2.5 3.0 3.5 4.0 70 80 Transfer Characteristics 100 0.025 R DS(on) - On-Resistance (Ω) 25 °C TC = - 55 °C 80 125 °C 60 40 20 0 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 60 0 10 20 VGS - Gate-to-Source Voltage (V) 30 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 8000 VGS - Gate-to-Source Voltage (V) 7000 6000 C - Capacitance (pF) 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) g fs - Transconductance (S) 1.0 Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 VDS = 30 V ID = 50 A 8 6 4 2 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 68940 S-82285-Rev. A, 22-Sep-08 50 60 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD50P06-15 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 17 A I S - Source Current (A) 1.6 (Normalized) R DS(on) - On-Resistance 1.8 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 1 0.6 - 50 - 25 0 25 50 75 100 125 150 0.0 TJ - Junction Temperature (°C) 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS 100 60 Limited by R DS(on)* P(t) = 0.0001 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 BVDSS Limited 10 P(t) = 0.001 10 P(t) = 0.01 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) Drain Current vs. Case Temperature 150 1 0.1 P(t) = 0.1 P(t) = 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68940. www.vishay.com 4 Document Number: 68940 S-82285-Rev. A, 22-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1