SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V (D-S) 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View SUB75P03-07 G G D S Top View SUP75P03-07 Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Limit Unit VGS ± 20 V ID TC = 125 °C b Symbol TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)c Operating Junction and Storage Temperature Range - 65 IDM - 240 IAR - 60 EAR L = 0.1 mH - 75a PD 180 187d 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter c Junction-to-Ambient PCB Mount (TO-263) Free Air (TO-220AB) Junction-to-Case RthJA RthJC 40 62.5 °C/W 0.8 Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. When Mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71109 S-72688-Rev. D, 24-Dec-07 www.vishay.com 1 SUP/SUB75P03-07 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = - 250 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250 ID(on) VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) 0.010 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.013 Forward Transconductance VDS = - 15 V, ID = - 75 A nA µA 0.007 VGS = - 10 V, ID = - 30 A, TJ = 125 °C gfs V A 0.0055 VGS = - 4.5 V, ID = - 20 A a -3 0.008 Ω 0.010 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 715 Total Gate Chargec Qg 160 c 9000 VGS = 0 V, VDS = - 25 V, f = 1 MHz Gate-Source Charge Qgs Gate-Drain Chargec Qgd 30 Turn-On Delay Timec td(on) 25 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = - 15 V, VGS = - 10 V, ID = - 75 A VDD = - 15 V, RL = 0.2 Ω ID ≅ - 75 A, VGEN = - 10 V, RG = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics (TC = 25 pF 1565 240 nC 32 40 225 360 150 240 210 340 °C)b IS - 75 Pulsed Current ISM - 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = - 75 A, VGS = 0 V - 1.2 - 1.5 V 55 100 ns IF = - 75 A, di/dt = 100 A/µs 2.5 5 A 0.07 0.25 µC trr IRM(REC) ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71109 S-72688-Rev. D, 24-Dec-07 SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 250 TC = - 55 °C VGS = 10 thru 6 V I D - Drain Current (A) I D - Drain Current (A) 25 °C 160 200 5V 150 100 4V 50 120 125 °C 80 40 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 150 TC = - 55 °C 0.025 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 120 25 °C 125 °C 90 60 30 0.020 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 0 0 0 20 40 60 80 0 100 20 40 ID - Drain Current (A) 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 10000 VGS - Gate-to-Source Voltage (V) 12000 C - Capacitance (pF) 60 Ciss 8000 6000 4000 Coss 2000 Crss 0 0 VDS = 15 V ID = 75 A 16 12 8 4 0 6 12 18 24 30 0 50 100 150 200 250 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71109 S-72688-Rev. D, 24-Dec-07 300 www.vishay.com 3 SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 100 VGS = 10 V ID = 30 A TJ = 150 °C I S - Source Current (A) 1.2 (Normalized) r DS(on) - On-Resistance 1.5 0.9 0.6 10 TJ = 25 °C 0.3 0 - 50 - 25 0 25 50 75 100 125 150 1 175 0 0.2 TJ - Junction Temperature (°C) 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 45 ID = 250 µA IAV (A) at TA = 25 °C 40 V(BR)DSS (V) I Dav (a) 100 10 IAV (A) at TA = 150 °C 1 30 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 35 1 25 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 71109 S-72688-Rev. D, 24-Dec-07 SUP/SUB75P03-07 Vishay Siliconix THERMAL RATINGS 1000 90 10 µs 75 I D - Drain Current (A) I D - Drain Current (A) 100 60 45 30 100 µs Limited by rDS(on)* 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 15 0 0 25 50 75 100 125 150 175 1 ms 0.1 0.1 TC - Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71109. Document Number: 71109 S-72688-Rev. D, 24-Dec-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1