TN0201T Vishay Siliconix N-Channel 20–V (D–S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.0 to 3.0 0.39 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 0.75 W Low Threshold: <1.75 V Low Input Capacitance: 65 pF Fast Switching Speed: 15 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-236 (SOT-23) G Marking Code: N1wll 1 3 S 2 D N1 = Part Number Code for TN0201T w = Week Code ll = Lot Traceability Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 70_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range TA= 70_C V 0.39 ID IDM TA= 25_C Unit 0.25 A 0.75 0.35 PD 0.22 W RthJA 357 _C/W TJ, Tstg –55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70200 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 TN0201T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 10 mA 20 40 VGS(th) VDS = VGS, ID = 0.25 mA 1.0 1.90 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 14 V, VGS = 0 V, TJ = 55_C 10 On-State Drain Currentb ID(on) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage VDS = 10 V, VGS = 10 V 0.5 3.0 0.75 V nA m mA A VGS = 4.5 V, ID = 0.1 A 1 1.4 VGS = 10 V, ID = 0.3 A 0.75 1.0 gfs VDS = 10 V, ID = 0.2 A 450 mS VSD IS = 0.3 A, VGS = 0 V 0.85 V rDS(on) W Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1400 VDS = 16 V, VGS = 10 V ID ^ 0.3 A 300 pC 200 65 VDS = 15 V, VGS = 0 V, f = 1 MHz 35 pF 6 Switchinga, c td(on) Turn-On Time Turn-Off Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 5 VDD = 15 V, RL = 50 W ID ^ 0.3 A, VGEN = 10 V RG = 6 W 10 ns 12 6 VNBP02 Document Number: 70200 S-04279—Rev. E, 16-Jul-01 TN0201T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.0 0.8 5V 4V 0.7 0.8 ID – Drain Current (A) ID – Drain Current (A) 0.6 0.5 0.4 VGS = 10, 9, 8, 7, 6 V 0.3 3V 0.2 0.6 0.4 TJ = 125_C 0.2 –55_C 0.1 2V 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.0 1.4 25_C 0.5 On-Resistance vs. Gate-Source Voltage 2.0 2.5 3.0 3.5 4.0 4.5 1.5 rDS(on) – On-Resistance ( Ω ) 2.0 1.6 1.2 ID @ 300 mA 0.8 1.2 VGS = 4.5 V 0.9 VGS = 10 V 0.6 0.3 0.4 0.0 0 4 8 12 16 0.0 0.0 20 0.1 0.2 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature 0.4 0.5 0.6 0.7 0.8 Threshold Voltage Variance Over Temperature 0.2 0.1 1.45 ID = 250 mA 1.25 VGS(th) – Variance (V) VGS = 10 V @ 300 mA VGS = 4.5 V @ 100 mA 1.05 0.85 0.65 –50 0.3 ID – Drain Current (A) 1.65 rDS(on) – On-Resistance ( Ω ) (Normalized) 1.5 On-Resistance vs. Drain Current 2.4 rDS(on) – On-Resistance ( Ω ) 1.0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) –0.0 –0.1 –0.2 –0.3 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 70200 S-04279—Rev. E, 16-Jul-01 125 150 –0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN0201T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance 140 VGS – Gate-to-Source Voltage (V) C – Capacitance (pF) VDS = 16 V ID = 300 mA VGS = 0V S = IMHZ 120 Gate Charge 20 100 80 Ciss 60 Coss 40 20 15 10 5 Crss 0 0 0 4 8 12 16 0 20 500 VDS – Drain-to-Source Voltage (V) 1000 1500 2000 2500 3000 Qg – Total Gate Charge (pC) Source-Drain Diode Forward Voltage 10.0 IS – Source Current (A) ID = 250 mA 1.0 0.100 TJ = 125_C 0.010 25_C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V) www.vishay.com 11-4 Document Number: 70200 S-04279—Rev. E, 16-Jul-01