VISHAY TN0201T

TN0201T
Vishay Siliconix
N-Channel 20–V (D–S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
1.0 to 3.0
0.39
1.0 @ VGS = 10 V
20
1.4 @ VGS = 4.5 V
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Low On-Resistance: 0.75 W
Low Threshold: <1.75 V
Low Input Capacitance: 65 pF
Fast Switching Speed: 15 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
TO-236
(SOT-23)
G
Marking Code: N1wll
1
3
S
2
D
N1 = Part Number Code for TN0201T
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_
TA= 25_C
TA= 70_C
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 70_C
V
0.39
ID
IDM
TA= 25_C
Unit
0.25
A
0.75
0.35
PD
0.22
W
RthJA
357
_C/W
TJ, Tstg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
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11-1
TN0201T
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Symbol
Test Conditions
Min
Typa
V(BR)DSS
VGS = 0 V, ID = 10 mA
20
40
VGS(th)
VDS = VGS, ID = 0.25 mA
1.0
1.90
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 16 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 14 V, VGS = 0 V, TJ = 55_C
10
On-State Drain Currentb
ID(on)
Parameter
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistanceb
Forward Transconductanceb
Diode Forward Voltage
VDS = 10 V, VGS = 10 V
0.5
3.0
0.75
V
nA
m
mA
A
VGS = 4.5 V, ID = 0.1 A
1
1.4
VGS = 10 V, ID = 0.3 A
0.75
1.0
gfs
VDS = 10 V, ID = 0.2 A
450
mS
VSD
IS = 0.3 A, VGS = 0 V
0.85
V
rDS(on)
W
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1400
VDS = 16 V, VGS = 10 V
ID ^ 0.3 A
300
pC
200
65
VDS = 15 V, VGS = 0 V, f = 1 MHz
35
pF
6
Switchinga, c
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
tf
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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11-2
5
VDD = 15 V, RL = 50 W
ID ^ 0.3 A, VGEN = 10 V
RG = 6 W
10
ns
12
6
VNBP02
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
TN0201T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
1.0
0.8
5V
4V
0.7
0.8
ID – Drain Current (A)
ID – Drain Current (A)
0.6
0.5
0.4
VGS = 10, 9, 8, 7, 6 V
0.3
3V
0.2
0.6
0.4
TJ = 125_C
0.2
–55_C
0.1
2V
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.0
1.4
25_C
0.5
On-Resistance vs. Gate-Source Voltage
2.0
2.5
3.0
3.5
4.0
4.5
1.5
rDS(on) – On-Resistance ( Ω )
2.0
1.6
1.2
ID @ 300 mA
0.8
1.2
VGS = 4.5 V
0.9
VGS = 10 V
0.6
0.3
0.4
0.0
0
4
8
12
16
0.0
0.0
20
0.1
0.2
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
0.4
0.5
0.6
0.7
0.8
Threshold Voltage Variance Over Temperature
0.2
0.1
1.45
ID = 250 mA
1.25
VGS(th) – Variance (V)
VGS = 10 V @ 300 mA
VGS = 4.5 V
@ 100 mA
1.05
0.85
0.65
–50
0.3
ID – Drain Current (A)
1.65
rDS(on) – On-Resistance ( Ω )
(Normalized)
1.5
On-Resistance vs. Drain Current
2.4
rDS(on) – On-Resistance ( Ω )
1.0
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
–0.0
–0.1
–0.2
–0.3
–25
0
25
50
75
100
TJ – Junction Temperature (_C)
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
125
150
–0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-3
TN0201T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Capacitance
140
VGS – Gate-to-Source Voltage (V)
C – Capacitance (pF)
VDS = 16 V
ID = 300 mA
VGS = 0V
S = IMHZ
120
Gate Charge
20
100
80
Ciss
60
Coss
40
20
15
10
5
Crss
0
0
0
4
8
12
16
0
20
500
VDS – Drain-to-Source Voltage (V)
1000
1500
2000
2500
3000
Qg – Total Gate Charge (pC)
Source-Drain Diode Forward Voltage
10.0
IS – Source Current (A)
ID = 250 mA
1.0
0.100
TJ = 125_C
0.010
25_C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD – Source-to-Drain Voltage (V)
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Document Number: 70200
S-04279—Rev. E, 16-Jul-01