VISHAY SI1013X

Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (mA)
1.2 @ VGS = –4.5 V
–350
–20
1.6 @ VGS = –2.5 V
–300
2.7 @ VGS = –1.8 V
–150
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
High-Side Switching
Low On-Resistance: 1.2 W
Low Threshold: 0.8 V (typ)
Fast Swtiching Speed: 14 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SC-75A or SC-89
G
Ordering Information:
1
3
S
SC-75A (SOT– 416):
Si1013R–Marking Code : D
D
SC-89 (SOT– 490):
Si1013X–Marking Code: B
2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"6
Continuous Drain Current (TJ = 150_C)
_ b
TA = 85_C
Pulsed Drain Currenta
Maximum Power Dissipationb for SC-75
Maximum Power
ID
IS
TA = 25_C
TA = 85_C
TA = 25_C
for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
PD
TA = 85_C
V
–350
–300
IDM
Continuous Source Current (diode conduction)b
Dissipationb
–400
TA = 25_C
Unit
–275
mA
–1000
–275
–250
175
150
90
80
275
250
160
140
mW
TJ, Tstg
–55 to 150
_C
ESD
2000
V
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
www.vishay.com
1
Si1013R/X
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Diode Forward
Voltagea
VDS = 0 V, VGS = "4.5 V
"1
"2
mA
VDS = –16 V, VGS = 0 V
–0.3
–100
nA
mA
–5
VDS = –16 V, VGS = 0 V, TJ = 85_C
VDS = –5 V, VGS = –4.5 V
–700
mA
VGS = –4.5 V, ID = –350 mA
0.8
1.2
VGS = –2.5 V, ID = –300 m A
1.2
1.6
VGS = –1.8 V, ID = –150 m A
1.8
2.7
gfs
VDS = –10 V, ID = –250 mA
0.4
VSD
IS = –150 mA, VGS = 0 V
–0.8
rDS(on)
Forward Transconductancea
V
W
S
–1.2
V
Dynamicb
Total Gate Charge
Qg
1500
VDS = –10 V, VGS = –4.5 V, ID = –250 mA
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
450
Turn-On Delay Time
td(on)
5
Rise Time
tr
Turn-Off Delay Time
Fall Time
9
VDD = –10 V, RL = 47 W
ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W
td(off)
pC
150
ns
35
tf
11
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
Transfer Characteristics
1.0
1000
VGS = 5 thru 3 V
TJ = –55_C
2.5 V
0.6
2V
0.4
1.8 V
0.2
0.0
0.0
2
600
125_C
400
200
0.5
1.0
1.5
2.0
2.5
VDS – Drain-to-Source Voltage (V)
www.vishay.com
25_C
800
I D – Drain Current (mA)
I D – Drain Current (A)
0.8
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
Si1013R/X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
120
100
3.2
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
4.0
VGS = 1.8 V
2.4
VGS = 2.5 V
1.6
VGS = 4.5 V
Ciss
80
60
40
Coss
0.8
20
Crss
0.0
0
0
200
400
600
800
1000
0
4
ID – Drain Current (mA)
Gate Charge
20
On-Resistance vs. Junction Temperature
VDS = 10 V
ID = 250 mA
r DS(on) – On-Resistance ( W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
16
1.6
4
3
2
1
1.4
VGS = 4.5 V
ID = 350 mA
1.2
VGS = 1.8 V
ID = 150 mA
1.0
0.8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
–50
1.6
–25
Qg – Total Gate Charge (nC)
0
25
50
75
100
125
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
1000
TJ = 125_C
r DS(on) – On-Resistance ( W )
IS – Source Current (mA)
12
VDS – Drain-to-Source Voltage (V)
5
0
0.0
8
100
TJ = 25_C
TJ = –55_C
10
1
0.0
4
3
ID = 350 mA
2
ID = 200 mA
1
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
1.2
1.4
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
www.vishay.com
3
Si1013R/X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Threshold Voltage Variance vs. Temperature
IGSS vs. Temperature
0.3
3.0
2.5
ID = 0.25 mA
0.1
2.0
IGSS – (mA)
V GS(th) Variance (V)
0.2
–0.0
1.5
–0.1
1.0
–0.2
0.5
–0.3
–50
–25
0
25
50
75
100
0.0
–50
125
VGS = 4.5 V
–25
0
TJ – Temperature (_C)
25
50
75
100
125
TJ – Temperature (_C)
BVGSS – Gate-to-Source Breakdown Voltage (V)
BVGSS vs. Temperature
7
6
5
4
3
2
1
0
–50
–25
0
25
50
75
100
125
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA =833_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
www.vishay.com
4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
Si1013R/X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
5