Si7856DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 25 0.0055 @ VGS = 4.5 V 23 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 14 19 IDM Continuous Source Current (Diode Conduction)a V 25 ID 11 A 60 4.5 1.6 5.4 1.9 3.4 1.2 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71850 S-20351—Rev. A, 18-Apr-02 www.vishay.com 1 Si7856DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 mA 1.0 1.95 3.0 V IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea m mA 30 A VGS = 10 V, ID = 25 A 0.0035 0.0045 VGS = 4.5 V, ID = 19 A 0.0043 0.0055 gfs VDS = 15 V, ID = 25 A 95 VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 34 50 W S V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 25 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 10 Gate Resistance RG 1.3 td(on) 21 tr 15 25 100 150 30 45 50 80 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 15 IF = 2.9 A, di/dt = 100 A/ms W 35 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D – Drain Current (A) I D – Drain Current (A) 50 40 30 20 3V 10 40 30 20 TC = 125_C 10 25_C –55_C 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) Document Number: 71850 S-20351—Rev. A, 18-Apr-02 Si7856DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 0.010 7000 0.008 5600 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) Ciss 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 4200 2800 Coss 1400 Crss 0.000 0 0 10 20 30 40 50 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 6 1.8 VDS = 15 V ID = 20 A 5 r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 18 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 4 3 2 1 VGS = 10 V ID = 20 A 1.6 1.4 1.2 1.0 0.8 0 0 10 20 30 40 0.6 –50 50 –25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) – On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.016 ID = 20 A 0.012 0.008 0.004 0.000 1 0.00 25 TJ – Junction Temperature (_C) Qg – Total Gate Charge (nC) I S – Source Current (A) 12 0.2 0.4 0.6 0.8 VSD – Source-to-Drain Voltage (V) Document Number: 71850 S-20351—Rev. A, 18-Apr-02 1.0 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7856DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 200 ID = 250 mA 0.4 0.2 Power (W) V GS(th) Variance (V) 160 –0.0 –0.2 120 80 –0.4 40 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71850 S-20351—Rev. A, 18-Apr-02