Si4390DY New Product Vishay Siliconix N-Channel Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V 10.5 APPLICATIONS D High-Side DC/DC Conversion - Notebook - Server D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si4390DY Si4390DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 12.5 8.5 10 6.8 A 2.7 1.3 A 3.0 1.4 1.9 0.9 IDM Continuous Source Current (Diode Conduction)a Unit 20 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 32 42 68 90 15 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72150 S-03920—Rev. B, 19-May-03 www.vishay.com 1 Si4390DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS Typ Max Unit 2.8 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 30 A VGS = 10 V, ID = 12.5 A 0.0075 0.0095 VGS = 4.5 V, ID = 10.5 A 0.0105 0.0135 gfs VDS = 15 V, ID = 12.5 A 38 VSD IS = 2.7 A, VGS = 0 V 0.7 1.1 10 15 W S V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 12.5 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.1 Gate Resistance Rg 0.8 td(on) 16 30 tr 6 12 43 70 14 25 35 60 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.5 IF = 2.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 3V 30 20 10 30 20 TC = 125_C 10 25_C -55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Document Number: 72150 S-03920—Rev. B, 19-May-03 Si4390DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 0.030 1800 0.024 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) Ciss 1500 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 1200 900 Coss 600 Crss 300 0.000 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 12.5 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 6 4 3 2 1 VGS = 10 V ID = 12.5 A 1.6 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 -50 15 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.040 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 1 TJ = 25_C 0.1 0.0 25 TJ - Junction Temperature (_C) 50 I S - Source Current (A) 12 0.032 ID = 12.5 A 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72150 S-03920—Rev. B, 19-May-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4390DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 200 160 ID = 250 mA 0.2 120 Power (W) V GS(th) Variance (V) 0.4 -0.0 -0.2 80 -0.4 40 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 0.001 150 0.1 0.01 1 10 Time (sec) TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72150 S-03920—Rev. B, 19-May-03 Si4390DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 Document Number: 72150 S-03920—Rev. B, 19-May-03 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5