Si7358DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 23 0.007 @ VGS = 4.5 V 20 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 14 18 IDM Continuous Source Current (Diode Conduction)a V 23 ID 11 A 60 4.5 1.6 5.4 1.9 3.4 1.2 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71882 S-20951—Rev. A, 01-Jul-02 www.vishay.com 1 Si7358DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea m mA 30 A VGS = 10 V, ID = 23 A 0.0040 0.00525 VGS = 4.5 V, ID = 20 A 0.0055 0.007 gfs VDS = 15 V, ID = 23 A 90 VSD IS = 4.5 A, VGS = 0 V 0.75 1.1 30.5 40 W S V Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 23 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 9.5 Gate Resistance RG 1.4 td(on) 21 tr 10 20 83 130 27 45 50 80 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 13.5 IF = 2.9 A, di/dt = 100 A/ms W 35 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D – Drain Current (A) I D – Drain Current (A) 50 40 30 20 3V 10 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 30 20 TC = 125_C 10 0 0 40 5 0 0.0 25_C 0.5 1.0 1.5 2.0 2.5 –55_C 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Document Number: 71882 S-20951—Rev. A, 01-Jul-02 Si7358DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 6500 0.008 5200 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 0.010 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 Ciss 3900 2600 Coss 1300 Crss 0.000 0 0 10 20 30 40 50 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.8 10 VDS = 15 V ID = 23 A 8 r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 18 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 6 4 2 VGS = 10 V ID = 23 A 1.6 1.4 1.2 1.0 0.8 0 0 15 30 45 60 0.6 –50 75 –25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) – On-Resistance ( W ) 60 TJ = 150_C 10 TJ = 25_C 0.016 ID = 23 A 0.012 0.008 0.004 0.000 1 0.00 25 TJ – Junction Temperature (_C) Qg – Total Gate Charge (nC) I S – Source Current (A) 12 0.2 0.4 0.6 0.8 VSD – Source-to-Drain Voltage (V) Document Number: 71882 S-20951—Rev. A, 01-Jul-02 1.0 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7358DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 60 ID = 250 mA 50 0.2 40 Power (W) V GS(th) Variance (V) 0.4 –0.0 –0.2 30 20 –0.4 10 –0.6 –0.8 –50 –25 0 25 50 75 100 125 0 10–2 150 10–1 1 10 100 600 Time (sec) TJ – Temperature (_C) Safe Operating Area 100 1 ms Limited by rDS(on) I D – Drain Current (A) 10 10 ms 100 ms 1 1s 10 s TC = 25_C Single Pulse 0.1 dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71882 S-20951—Rev. A, 01-Jul-02 Si7358DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71882 S-20951—Rev. A, 01-Jul-02 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5