Si7483ADP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.0057 @ VGS = −10 V −24 0.0095 @ VGS = −4.5 V −17 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg tested APPLICATIONS D Battery and Load Switching − Notebook Computers − Notebook Battery Packs PowerPAK SO-8 S S 6.15 mm 1 2 5.15 mm S 3 G S 4 G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET Ordering Information: Si7483ADP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −24 −14 −19 −11 IDM −60 −4.5 −1.6 5.4 1.9 3.4 1.2 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73025 S-41525—Rev. A, 16-Aug-04 www.vishay.com 1 Si7483ADP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1.0 Typ Max Unit −3.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea −1 VDS = −30 V, VGS = 0 V, TJ = 70_C −10 VDS = −5 V, VGS = −10 V rDS(on) DS( ) Forward Transconductancea VDS = −30 V, VGS = 0 V mA −30 A VGS = −10 V, ID = −24 A 0.0047 0.0057 VGS = −4.5 V, ID = −17 A 0.0075 0.0095 gfs VDS = −15 V, ID = −24 A 70 VSD IS = −2.9 A, VGS = 0 V −0.73 −1.1 120 180 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −15 V, VGS = −10 V, ID = −24 A 18 33 Rg Turn-On Delay Time 1.6 td(on) Rise Time tr Turn-Off Delay Time VDD = −15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = −2.9 A, di/dt = 100 A/ms 3.2 4.8 22 35 33 50 210 320 130 200 70 130 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 40 I D − Drain Current (A) I D − Drain Current (A) 50 30 20 3V 10 40 30 20 TC = 125_C 10 25_C −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 73025 S-41525—Rev. A, 16-Aug-04 Si7483ADP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 8200 0.012 Ciss 6560 0.009 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.015 VGS = 4.5 V 0.006 VGS = 10 V 0.003 4920 3280 Coss 1640 Crss 0.000 0 0 10 20 30 40 50 0 5 Gate Charge 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 1.6 VDS = 15 V ID = 24 A 8 6 4 2 20 25 30 On-Resistance vs. Junction Temperature VGS = 10 V ID = 24 A 1.2 1.0 0.8 0 0 20 40 60 80 100 0.6 −50 120 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) − On-Resistance ( W ) 10 TJ = 150_C TJ = 25_C 1 0.016 0.012 ID = 24 A 0.008 0.004 0.000 0.1 0.00 25 TJ − Junction Temperature (_C) 50 I S − Source Current (A) 15 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 10 10 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 73025 S-41525—Rev. A, 16-Aug-04 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7483ADP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 200 0.6 160 ID = 250 mA 0.4 Power (W) V GS(th) Variance (V) Threshold Voltage 0.8 0.2 120 80 0.0 40 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 TJ − Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area 1 ms Limited by rDS(on) I D − Drain Current (A) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73025 S-41525—Rev. A, 16-Aug-04 Si7483ADP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 Document Number: 73025 S-41525—Rev. A, 16-Aug-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5