DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and stress free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Available in ammopack. k handbook, 4 columns a MAM123 APPLICATIONS • RF attenuator with low distortion for frequencies above 100 kHz. Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF(AV) average forward current CONDITIONS MIN. MAX. − 100 UNIT V − 100 V Ttp = 25 °C; lead length = 10 mm; see Fig.2 − 1.25 A Tamb = 60 °C; printed-circuit board mounting (see Fig.17); see Fig.3 − 600 mA Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C 1997 Aug 26 2 Philips Semiconductors Product specification AM PIN diode BAQ800 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity of this product. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. TYP. MAX. IF = 100 mA; see Figs 4 and 5 − 0.9 1.1 V IF = 100 mA; Tj = Tj max; see Figs 4 and 5 − 0.7 0.9 V VR = 100 V; see Fig.14 − − 0.1 µA VR = 100 V; Tj = 125 °C; see Fig.14 − − 30 µA 20 − µs τ charge carrier life time when switched from IF = 10 mA to IR = 6 mA; measured at 10% of IR; see Fig.15 Cd diode capacitance f = 1 MHz; see Figs 6, 7, 8 and 9 rD diode forward resistance 10 VR = 0 − 10 12 pF VR = 2 V − 5 6 pF − 3100 6000 IF = 100 µA − 380 800 Ω IF = 1 mA − 42 80 Ω IF = 10 mA − 5 10 Ω f = 100 kHz; see Figs 10 and 16 IF = 10 µA rs diode series resistance UNIT Ω f = 100 kHz; see Figs 11, 12 and 13 VR = 0 1000 2200 − kΩ VR = 2 V 5000 11000 − kΩ 25 50 − kΩ 100 220 − kΩ f = 1 MHz; see Figs 11, 12 and 13 VR = 0 VR = 2 V THERMAL CHARACTERISTICS All characteristics must be tested in the dark because of the light sensitivity of this product. SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 60 K/W 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17. For more information please refer to the “General Part of Handbook SC01”. 1997 Aug 26 3 Philips Semiconductors Product specification AM PIN diode BAQ800 GRAPHICAL DATA MGG498 1.5 IF(AV) IF(AV) (A) (A) 1.0 1.0 0.5 0.5 0 0 100 Ttp (°C) 0 200 0 DC application. Fig.2 MGG499 1.5 handbook, halfpage handbook, halfpage 100 Tamb (°C) 200 DC application. Maximum permissible average forward current as a function of tie-point temperature. Fig.3 MGG500 104 handbook, halfpage Maximum permissible average forward current as a function of ambient temperature. MGG501 104 handbook, halfpage IF (mA) 103 IF (mA) 103 102 102 10 10 1 1 10−1 10−1 10−2 0 0.4 0.8 1.2 1.6 10−2 2.0 0 0.4 VF (V) 1997 Aug 26 1.2 1.6 2.0 VF (V) Dotted line: Tj = 150 °C. Solid line: Tj = 25 °C. Fig.4 0.8 Dotted line: Tj = 150 °C. Solid line: Tj = 25 °C. Forward voltage as a function of forward current; typical values. Fig.5 4 Forward voltage as a function of forward current; maximum values. Philips Semiconductors Product specification AM PIN diode BAQ800 MGG503 12 MGL101 12 handbook, halfpage handbook, halfpage Cd (pF) Cd (pF) 8 8 (1) (2) 4 4 0 10 0 0 2 4 6 8 VR (V) 10 Diode capacitance as a function of reverse voltage; typical values. Fig.7 MGK448 24 d (pF) 20 103 f (kHz) 104 Tj = 25 °C. (1) VR = 0. (2) VR = 2 V. f = 1 MHz; Tj = 25 °C. Fig.6 102 Diode capacitance as a function of frequency; typical values. MGK449 6 d (pF) 5 handbook, C halfpage handbook, C halfpage (1) (1) (2) (3) 4 16 12 3 (2) (3) 8 2 4 1 0 102 f (kHz) 0 102 103 f (kHz) (1) Tj = 85 °C. (2) Tj = 25 °C. (3) Tj = −40 °C. VR = 0. (1) Tj = 85 °C. (2) Tj = 25 °C. (3) Tj = −40 °C. VR = 2 V. Fig.8 Fig.9 1997 Aug 26 Diode capacitance as a function of frequency; typical values. 5 103 Diode capacitance as a function of frequency; typical values. Philips Semiconductors Product specification AM PIN diode BAQ800 MGG504 104 handbook, halfpage MGG505 105 handbook, halfpage rD (Ω) rs (kΩ) 103 104 102 103 10 102 1 10 102 103 IF (µA) 10 10 104 Fig.10 Diode forward resistance as a function of forward current; typical values. 104 MGK446 105 handbook, halfpage rs (kΩ) (1) 104 (2) 103 103 (1) (3) 102 10 10 f (kHz) Fig.11 Diode series resistance as a function of frequency; typical values. MGK447 105 handbook, halfpage 104 103 Tj = 25 °C. Solid line: VR = 0. Dotted line: VR = 2 V. f = 100 kHz; see Fig.16. rs (kΩ) 102 (2) 102 102 103 f (kHz) 10 10 104 (3) 102 103 f (kHz) 104 (1) Tj = −40 °C. (2) Tj = 25 °C. (3) Tj = 85 °C. VR = 0. (1) Tj = −40 °C. (2) Tj = 25 °C. (3) Tj = 85 °C. VR = 2 V. Fig.12 Diode series resistance as a function of frequency; typical values. Fig.13 Diode series resistance as a function of frequency; typical values. 1997 Aug 26 6 Philips Semiconductors Product specification AM PIN diode BAQ800 MGG502 102 handbook, halfpage IR (µA) 10 1 10−1 0 50 100 Tj (°C) 150 VR = VRRMmax. Fig.14 Reverse current as a function of junction temperature; maximum values. 1997 Aug 26 7 Philips Semiconductors Product specification AM PIN diode BAQ800 handbook, full pagewidth 10 IF (mA) 10 µF pulse f = 1 kHz DUT τ 10 Ω 10 mA 0 10% t IR (mA) 90% 6 MGG506 Input impedance of oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.15 Charge carrier life time test circuit and definition. 50 handbook, halfpage 25 handbook, halfpage 100 kHz 50 Ω R1 1 µF IF R2 DUT 50 Ω Vin Vout 7 11 V 50 MGG507 2 IF (mA) 0.1 R1 (Ω) R2 (kΩ) 3000 100 1 300 10 10 30 1 3 MGA200 Dimensions in mm. Fig.16 Diode forward resistance test circuit. 1997 Aug 26 Fig.17 Device mounted on a printed-circuit board. 8 Philips Semiconductors Product specification AM PIN diode BAQ800 PACKAGE OUTLINE Hermetically sealed glass package; ImplotecTM(1) technology; axial leaded; 2 leads SOD81 G1 (2) k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. D max. 0.81 G1 max. G max. 2.15 3.8 5 L min. 0 1 2 mm scale 28 Note 1. Implotec is a trademark of Philips. 2. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 SOD81 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 26 9 Philips Semiconductors Product specification AM PIN diode BAQ800 NOTES 1997 Aug 26 10 Philips Semiconductors Product specification AM PIN diode BAQ800 NOTES 1997 Aug 26 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117027/1200/01/pp12 Date of release: 1997 Aug 26 Document order number: 9397 750 02774