DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in AM car radios PIN • High transfer admittance. APPLICATIONS DESCRIPTION 1 source 2 drain 3 gate • Pre-amplifiers in AM car radios. 3 handbook, halfpage DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable. 1 2 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 20 V VGS (off) gate-source cut-off voltage − −0.7 − V IDSS drain-source current 10 − 25 mA Ptot total power dissipation − − 225 mW |yfs| transfer admittance 30 40 − mS Tj junction temperature − − 150 °C Ts ≤ 92 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Jun 29 2 Philips Semiconductors Preliminary specification N-channel junction FET BF862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V VDG drain-gate voltage − 20 V VGS gate-source voltage − −20 V IDS drain-source current − 40 mA IG forward gate current − 10 mA Ptot total power dissipation − 225 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Ts ≤ 92 °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Notes 1. Soldering point of the gate lead. MGS298 250 handbook, halfpage Ptot (mW) 200 150 100 50 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 1999 Jun 29 3 note 1 VALUE UNIT 260 K/W Philips Semiconductors Preliminary specification N-channel junction FET BF862 STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IGS = −1 µA; VDS = 0 −20 − − V VGS gate-source forward voltage VDS = 0; IG = 1 mA − − 1 V VGS (off) gate-source cut-off voltage VDS = 8 V; ID = 1 µA − −0.7 − V IGSS reverse gate current VGS = −15 V; VDS = 0 − − −1 nA IDSS drain-source current V GS = 0; VDS = 8 V 10 − 25 mA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS yfs common source forward transfer T j = 25 °C admittance gos common source output conductance Ciss MIN. TYP. MAX. UNIT 30 40 − mS T j = 25 °C − − 400 µS input capacitance f = 1 MHz − 10 − pF Crss reverse transfer capacitance f = 1 MHz − 2.5 − pF en equivalent noise input voltage f = 100 kHz − 0.8 − nV/√Hz fT transition frequency − 640 − MHz 1999 Jun 29 4 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Jun 29 EUROPEAN PROJECTION 5 Philips Semiconductors Preliminary specification N-channel junction FET BF862 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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