PHILIPS BF989

DISCRETE SEMICONDUCTORS
DATA SHEET
BF989
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF989
FEATURES
DESCRIPTION
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
APPLICATIONS
d
handbook, halfpage
• UHF applications such as:
4
3
– UHF television tuners
g2
– Professional communication equipment.
g1
PINNING
PIN
SYMBOL
1
s, b
1
DESCRIPTION
2
s,b
source
2
d
drain
3
g2
gate 2
4
g1
gate 1
Top view
MAM039
Marking code: MAp.
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
ID
drain current
−
20
mA
Ptot
total power dissipation
−
200
mW
Tj
junction temperature
−
150
°C
up to Tamb = 60 °C
12
−
mS
Cig1-s
input capacitance at gate 1 f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V
1.8
−
pF
Crs
feedback capacitance
f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V
25
−
fF
F
noise figure
f = 800 MHz; GS = 2 mS; BS = BSopt; ID = 7 mA; 2.8
VDS = 10 V; VG2-S = 4 V
−
dB
Y fs
April 1991
transfer admittance
f = 1 kHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF989
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
ID
drain current (DC)
−
20
mA
ID(AV)
average drain current
−
20
mA
IG1-S
gate 1-source current
−
±10
mA
IG2-S
gate 2-source current
−
±10
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature range
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Tamb = 60 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
Rth j-a
in free air; note 1
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MGE792
200
handbook, halfpage
Ptot
(mW)
100
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
April 1991
3
VALUE
UNIT
460
K/W
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF989
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VG1-S = ±5 V; VG2-S = VDS = 0
MIN.
−
MAX.
±50
UNIT
IG1-SS
gate 1 cut-off current
IG2-SS
gate 2 cut-off current
VG2-S = ±5 V; VG1-S = VDS = 0
−
±50
nA
IDSS
drain-source cut-off voltage
VDS = 10 V; VG1-S = 0; VG2-S = 4 V
2
20
mA
V(BR)G1-SS gate 1-source breakdown voltage
IG1-SS = ±10 mA; VG2-S = VDS = 0
±6
±20
V
V(BR)G2-SS gate 2-source breakdown voltage
nA
IG2-SS = ±10 mA; VG1-S = VDS = 0
±6
±20
V
V(P)G1-S
gate 1-source cut-off voltage
ID = 20 µA; VDS = 10 V; VG2-S = 4 V
−
−2.7
V
V(P)G2-S
gate 2-source cut-off voltage
ID = 20 µA; VDS = 10 V; VG1-S = 0
−
−2.7
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 7 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
Y fs
PARAMETER
CONDITIONS
MIN.
TYP.
UNIT
transfer admittance
f = 1 kHz
9.5
12
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
1.8
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
−
1
pF
Crs
feedback capacitance
f = 1 MHz
−
25
fF
Cos
output capacitance
f = 1 MHz
−
0.9
pF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt
−
1.6
dB
f = 800 MHz; GS = 2 mS; BS = BSopt
−
2.8
dB
April 1991
4
mS
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF989
PACKAGE OUTLINE
handbook, full pagewidth
3.0
2.8
0.150
0.090
0.75
0.60
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
1.4
1.2
2.5
max
o
10
max
1
1.1
max
o
30
max
0.88
2
0
0.1
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
See also Soldering recommendations.
Fig.3 SOT143.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
5
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF989
NOTES
April 1991
6
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF989
NOTES
April 1991
7
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© Philips Electronics N.V. 1996
SCA52
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Printed in The Netherlands
117061/00/02/pp8
Date of release: April 1991
Document order number:
9397 750 01541