DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. APPLICATIONS • RF applications such as: d handbook, halfpage 4 3 – Television tuners with 12 V supply voltage g2 – Professional communication equipment. g1 PINNING PIN SYMBOL 1 s, b DESCRIPTION 1 2 source 2 d drain 3 g2 gate 2 4 g1 gate 1 s,b Top view MAM039 Marking code: M87. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage − 18 V ID drain current − 30 mA Ptot total power dissipation − 200 mW Tj junction temperature − 150 °C up to Tamb = 60 °C 19 − mS Cig1-s input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.6 3 pF Crs feedback capacitance f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 25 − fF F noise figure f = 800 MHz; GS = 5 mS; BS = BSopt; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 3 dB Y fs April 1991 transfer admittance f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 18 V ID drain current (DC) − 30 mA IG1-S gate 1-source current − ±10 mA IG2-S gate 2-source current Ptot total power dissipation Tstg Tj − ±10 mA − 200 mW storage temperature −65 +150 °C junction temperature − 150 °C up to Tamb = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to ambient Rth j-a in free air; note 1 Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. MGE792 200 handbook, halfpage Ptot (mW) 100 0 0 100 Tamb (°C) 200 Fig.2 Power derating curve. April 1991 3 VALUE UNIT 460 K/W Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER IG1-SS gate 1 cut-off current IG2-SS gate 2 cut-off current CONDITIONS MIN. VG1-S = ±7 V; VG2-S = VDS = 0 − MAX. ±25 UNIT nA VG2-S = ±7 V; VG1-S = VDS = 0 − ±25 nA V(BR)G1-SS gate 1-source breakdown voltage IG1-SS = ±10 mA; VG2-S = VDS = 0 ±8 ±20 V V(BR)G2-SS gate 2-source breakdown voltage IG2-SS = ±10 mA; VG1-S = VDS = 0 ±8 ±20 V V(P)G1-S gate 1-source cut-off voltage ID = 20 µA; VDS = 10 V; VG2-S = 4 V − −1.3 V V(P)G2-S gate 2-source cut-off voltage ID = 20 µA; VDS = 10 V; VG1-S = 0 − −1.1 V DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT transfer admittance f = 1 kHz 18 19 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.6 3 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.4 − pF Crs feedback capacitance f = 1 MHz − 25 − fF Cos output capacitance f = 1 MHz − 1.2 − pF F noise figure f = 800 MHz; GS = 5 mS; BS = BSopt − 2 3 dB Y fs MGD833 20 MGD832 24 VG1−S +0.4 V handbook, halfpage handbook, halfpage ID (mA) ID (mA) max typ +0.2 V 16 min 0V 10 −0.2 V 8 −0.4 V −0.6 V 0 −1.5 0 0 4 8 12 VDS (V) 16 VG2-S = 4 V; Tamb = 25 °C. −0.5 0 0.5 1.0 VG1-S (V) VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C. Fig.3 Output characteristics. April 1991 −1.0 Fig.4 Transfer characteristics. 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. See also “Soldering recommendations”. Fig.5 SOT143. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A NOTES April 1991 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A NOTES April 1991 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 247 9145, Fax. +7 095 247 9144 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1996 SCA52 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117061/00/02/pp8 Date of release: April 1991 Document order number: 9397 750 01516