SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS(on) 0.6 Ω • Optimized capacitances ID 7.3 A • Improved noise immunity P-TO262 P-TO263-3-2 Type Package Ordering Code Marking SPP07N60S5 P-TO220-3-1 Q67040-S4172 07N60S5 SPB07N60S5 P-TO263-3-2 Q67040-S4185 07N60S5 SPI07N60S5 P-TO262 Q67040-S4328 07N60S5 P-TO220-3-1 D,2 G,1 S,3 Maximum Ratings, at Tc = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 7.3 TC=100°C 4.6 ID puls 14.6 EAS 230 EAR 0.5 Avalanche current (repetitive, limited by Tjmax ) IAR 7.3 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 83 W -55... +150 °C Pulsed drain current 1) TC=25°C Avalanche energy, single pulse mJ ID = 5.5 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 7.3 A , VDD = 50 V A kV/µs IS =7.3A, VDS<VDSS , di/dt=100A/µs, Tjmax =150°C TC=25°C Operating and storage temperature Tj , Tstg 1 2002-07-26 Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient RthJA - - 62 @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - K/W (Leaded and through-hole packages) SMD version, device on PCB: RthJA Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain-source breakdown voltage V(BR)DSS 600 - - V VGS(th) 3.5 4.5 5.5 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 350 µA, Tj = 25 °C Zero gate voltage drain current, VDS=VDSS µA IDSS VGS = 0 V, Tj = 25 °C - 0.5 1 VGS = 0 V, Tj = 150 °C - - 100 IGSS - - 100 nA RDS(on) - 0.54 0.6 Ω Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 4.6 A 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 2 2002-07-26 Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 4 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, ID =4.6A Input capacitance Ciss VGS =0V, VDS =25V, - 970 - Output capacitance Coss f=1MHz - 370 - Reverse transfer capacitance Crss - 10 - Turn-on delay time td(on) VDD =350V, VGS =10V, - 120 - Rise time tr ID =7.3A, RG=12Ω - 40 - Turn-off delay time td(off) - 170 255 Fall time tf - 20 30 - 7.5 - - 16.5 - - 27 35 - - 7.3 - - 14.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Total gate charge Qg VDD =350V, ID =7.3A VDD =350V, ID =7.3A, nC VGS =0 to 10V Reverse Diode Inverse diode continuous IS TC=25°C A forward current Inverse diode direct ISM current,pulsed Inverse diode forward voltage VSD VGS =0V, IF =7.3A - 1 1.2 V Reverse recovery time trr VR =350V, IF=lS, - 750 1275 ns Reverse recovery charge Qrr diF /dt=100A/µs - 4.9 - µC 3 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Power dissipation Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS ≥ 10 V 100 SPP07N60S5 8 W SPP07N60S5 A 80 6 ID Ptot 70 60 5 50 4 40 3 30 2 20 1 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC Safe operating area Transient thermal impedance ID=f (VDS) ZthJC = f (tp ) parameter: D=0.01, TC =25°C parameter : D = tp /T 10 °C 2 SPP07N60S5 10 1 K/W SPP07N60S5 A 10 0 = V DS ID /I D 10 1 Z thJC tp = 27.0µs 10 -1 on ) 100 µs DS ( 10 -2 R D = 0.50 0.20 10 0 10 -3 0.10 0.05 1 ms 10 -4 0.02 single pulse 0.01 10 ms 10 DC -1 10 0 10 1 10 2 V 10 10 -5 -7 10 3 VDS 4 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Typ. output characteristic Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) Parameter: VGS, Tj = 25 °C parameter : ID = 4.6 A, VGS = 10 V 24 3.4 SPP07N60S5 Ω 20V A 2.8 16 RDS(on) ID 12V 10V 12 2.4 2 1.6 9V 1.2 8 8V 98% 0.8 typ 4 0.4 7V 6V 0 0 5 10 15 0 -60 25 V -20 20 60 100 °C VDS 180 Tj Typ. transfer characteristics Typ. capacitances ID = f ( VGS ) C = f (VDS) VDS≥ 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz 10 4 24 pF A Ciss 16 C ID 10 3 Coss 10 2 12 8 10 1 Crss 4 0 0 4 8 12 10 0 0 20 VGS V 5 10 20 30 40 50 60 70 80 V 100 VDS 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Avalanche energy Avalanche SOA EAS = f (Tj ) IAR = f (tAR ) par.: ID =5.5A, VDD =50V par.: Tj ≤ 150 °C 260 8 mJ A 220 6 180 IAR EAS 200 160 5 Tj (START) =25°C 140 4 120 100 3 Tj (START) =125°C 80 2 60 40 1 20 0 20 40 60 80 100 °C 120 0 -3 10 160 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Tj Drain-source breakdown voltage Gate threshold voltage V(BR)DSS = f (Tj ) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 350 µA SPP07N60S5 7 720 V 680 V GS(th) V (BR)DSS V 660 5 max. 4 640 typ. 620 3 600 min. 2 580 1 560 540 -60 -20 20 60 100 °C 0 -60 180 Tj -20 20 60 100 °C 180 Tj 6 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Forward characteristics of reverse diode Typ. gate charge IF = f (VSD ) VGS = f (QGate ) parameter: Tj , tp = 10 µs parameter: ID = 7.3 A pulsed 10 2 SPP07N60S5 16 SPP07N60S5 V A 12 VGS IF 10 1 0,2 VDS max 0,8 VDS max 10 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 VSD 4 8 12 16 20 24 28 32 nC 38 Qg 7 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 4.44 A 13.5 ±0.5 C 9.98 ±0.48 0.05 5.23 ±0.9 15.38 ±0.6 2.8 ±0.2 1.27±0.13 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 ±0.2 1.27 ±0.1 B 0.1 A 8.5 1) 0.05 2.4 2.7 ±0.3 4.7 ±0.5 7.55 1) (15) 9.25 ±0.2 1 ±0.3 0...0.3 0...0.15 0.75 ±0.1 0.5 ±0.1 1.05 8 ˚ MAX. 2.54 5.08 1) 0.25 M A B 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 8 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data P-TO-262-3-1 (I 2-PAK) 10 ±0.2 A B 0...0.3 4.4 1) 0.05 13.5 ±0.5 4.55 ±0.2 C 2.4 9.25 ±0.2 1 ±0.3 1.27 7.55 11.6 ±0.3 8.5 1) 0.5 ±0.1 0...0.15 2.4 1.05 3 x 0.75 ±0.1 2 x 2.54 1) 0.25 M A B C Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. 9 2002-07-26 Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2002-07-26