D a t a S h e e t , R e v . 1 . 0 , A p r i l 2 00 9 BGB741L7ESD E S D - R o b u s t a n d E a s y - T o - U s e B r o a d b a nd L N A MMIC RF & Protection Devices Edition 2009-04-17 Published by Infineon Technologies AG, 85579 Neubiberg, Germany © Infineon Technologies AG 2009. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB741L7ESD BGB741L7ESD, ESD-Robust and Easy-To-Use Broadband LNA MMIC Revision History: 2009-04-17, Rev. 1.0 Prevision History: no previous version Page Data Sheet Subjects (major changes since last revision) 3 Rev. 1.0, 2009-04-17 BGB741L7ESD ESD-Robust and Easy-To-Use Broadband LNA MMIC 1 ESD-Robust and Easy-To-Use Broadband LNA MMIC Features • High-performance broadband LNA MMIC for applications between 50 MHz and 5.5 GHz • Integrated stabilization, biasing, matching and ESD-protection simplifies design and reduces external parts count • Integrated active biasing circuit makes operation point highly stable against temperature- and processing-variations • Integrated ESD protection: RF input pin typical 4 kV vs. GND, RF output pin 2.5 kV vs. GND (HBM stress pulses) • Supply voltage 1.8 - 4.0 V • Adjustable current 6 mA to 30 mA by an external resistor • Power-off function • Excellent noise figure for a broadband LNA by using latest SiGe:C bipolar technolgy • High linearity due to active biasing • Very small, leadless, Pb-free (RoHS compliant) and halogen-free (WEEE compliant) “green” package TSLP-7-1, 2.0 x 1.3 x 0.4 mm Applications • Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN, UWB 2 Product Brief The BGB741L7ESD is an advanced high performance low noise amplifier (LNA) MMIC which simplifies the design of arbitrary LNA application circuits. Due to its integrated feedback the device is perfectly matched up to 3.5 GHz. The integrated biasing further reduces external parts count and stabilizes the bias current against temperatureand process-variations. The integrated feedback provides unconditional stability and eases the design process. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD is based upon Infineon Techologies’ cost effective bipolar silicon germanium carbon (SiGe:C) technology and comes in a low profile TSLP-7-1 leadless “green” package. Type Package Marking BGB741L7ESD TSLP-7-1 AY Data Sheet 4 Rev. 1.0, 2009-04-17 BGB741L7ESD Product Brief 6 5 4 7 1 Figure 1 Pin configuration Table 1 Pinning table Pin Function 1 VCC 2 Bias-Out 3 RF-In 4 RF-Out 5 Control On/Off 6 Current Adjust 7 GND 2 3 The following diagram shows the principal schematic how the BGB741L7ESD is used in a circuit. The Power On/Off function is used by applying Vctrl. By applying an external resistor Rext the pre-set current of 6mA (which is adjusted by the integrated biasing when Rext is omitted) can be increased. Base- and collector voltages are applied to the respective RFin- and RFout-pins by external inductors. DC, VCC Rext 1 VCC 2 6 internal Biasing Current Adjust 5 LB Bias-Out In On/Off 3 Cin LC Out DC, V ctrl 4 RF-In RF-Out GND 7 Cout (on package backside ) BGB741L7ESD functional block Figure 2 Data Sheet Functional block diagram 5 Rev. 1.0, 2009-04-17 BGB741L7ESD Maximum Ratings 3 Maximum Ratings Table 2 Maximum ratings at TA = 25°C (unless otherwise specified) Parameter Symbol Value Unit Supply voltage TA = -55°C VCC 4.0 3.5 V Supply current at VCC pin ICC IB Vctrl Ptot 30 mA 3 mA 4.0 V 120 mW TJOp TStg -55...150 °C DC current at RF In pin Voltage at Control On / Off pin Total power dissipation TS<117°C 1) Operation junction temperature Storage temperature -55...150 °C 1) The soldering point temperature TS measured at the GND pin (7) at the soldering point to the pcb Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operation conditions. 4 Thermal Characteristics Table 3 Thermal Resistance Parameter Value Unit Junction - soldering point1) RthJS 275 1) For calculation of RthJA please refer to Application Note Thermal Resistance Symbol K/W 140 120 Ptot [mW] 100 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 3 Data Sheet Maximum total Power Dissipation Ptot as function of temperature TS at soldering point 6 Rev. 1.0, 2009-04-17 BGB741L7ESD Operation Conditions 5 Operation Conditions Table 4 Operation Conditions Parameter Symbol VCC Voltage Control On/Off pin in On mode Vctrl-on Voltage Control On/Off pin in Off mode Vctrl-off Supply voltage 6 Electrical Characteristics 6.1 DC Characteristics Table 5 DC characteristics at TA = 25 °C Parameter Supply current in On-mode Values Min. Typ. Max. 1.8 3.0 4.0 V 1.2 4.0 V -0.3 0.3 V Symbol ICC Unit Values Min. Typ. Max. 5.0 6.0 10 7.2 Note / Test Condition Unit Note / Test Condition mA Rext = open Rext = 4 kΩ VCC = 3.0 V Vctrl = 3.0 V (Small signal operation) Supply current in Off mode ICC-off Current into Control On/Off pin in On- Ictrl-on mode 14 Current into Control On/Off pin in Off- Ictrl-off mode Data Sheet 7 6.0 µA VCC = 3.0 V Vctrl = 0 V 20 µA VCC = 3.0 V Vctrl = 3.0 V 0.1 µA VCC = 3.0 V Vctrl = 0 V Rev. 1.0, 2009-04-17 BGB741L7ESD Electrical Characteristics 6.2 AC Characteristics The measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. Top View VB 1 VCC 2 BiasOut GND Current Adjust 6 On/Off Control 5 Bias-T In VC Bias-T 3 RF-In RF-Out Out 4 7 Figure 4 BGB741L7ESD testing setup Table 6 AC Characteristics, VC = 3 V, f = 150 MHz Parameter Symbol Values Min. Minimum Noise Figure1) Typ. NFmin Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. 1.05 0.95 Noise Figure in 50Ω System2) NF50 dB 1.1 1.05 Transducer Gain |S21|² Maximum Stable Power Gain Gms 19 21 dB dB 20 21.5 Input 1 dB Gain compression point3) IP1dB -5.5 -8 dBm Input 3rd Order Intercept Point IIP3 5.5 3.5 dBm Input Return Loss R.L.in 14 18 dB Output Return Loss R.L.out 12.5 18.5 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Data Sheet 8 Rev. 1.0, 2009-04-17 BGB741L7ESD Electrical Characteristics Table 7 AC Characteristics, VC = 3 V, f = 450 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. NFmin 1.05 0.95 Noise Figure in 50Ω System2) NF50 dB 1.1 1.05 Transducer Gain |S21|² Maximum Available Power Gain Gma 18.5 20.5 dB dB 19 20.5 Input 1 dB Gain compression point3) IP1dB -5 -7.5 dBm Input 3rd Order Intercept Point IIP3 4 2.5 dBm Input Return Loss R.L.in 15.5 21 dB Output Return Loss R.L.out 14.5 28 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Table 8 AC Characteristics, VC = 3 V, f = 900 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. NFmin Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA Max. 1.05 0.95 Noise Figure in 50Ω System2) NF50 dB 1.1 1.05 Transducer Gain |S21|² Maximum Available Power Gain Gma 18.5 20 dB dB 19 20.5 Input 1 dB Gain compression point3) IP1dB -5 -7 dBm Input 3rd Order Intercept Point IIP3 3 1.5 dBm Data Sheet 9 Rev. 1.0, 2009-04-17 BGB741L7ESD Electrical Characteristics Table 8 AC Characteristics, VC = 3 V, (cont’d)f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. Input Return Loss R.L.in 15.5 19 dB Output Return Loss R.L.out 14.5 28.5 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Table 9 AC Characteristics, VC = 3 V, f = 1500 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. NFmin Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. 1.05 1.0 Noise Figure in 50Ω System2) NF50 dB 1.1 1.05 Transducer Gain |S21|² Maximum Available Power Gain Gma 18 19.5 dB dB 18.5 20 Input 1 dB Gain compression point IP1dB -4.5 -6.5 dBm Input 3rd Order Intercept Point3) IIP3 2.5 1 dBm Input Return Loss R.L.in 14.5 16 dB Output Return Loss R.L.out 14 23 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Data Sheet 10 Rev. 1.0, 2009-04-17 BGB741L7ESD Electrical Characteristics Table 10 AC Characteristics, VC = 3 V, f = 1900 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. NFmin 1.05 1.05 Noise Figure in 50Ω System2) NF50 dB 1.15 1.1 Transducer Gain |S21|² Maximum Available Power Gain Gma 17.5 19 dB dB 18 19.5 Input 1 dB Gain compression point IP1dB -4 -6 dBm Input 3rd Order Intercept Point3) IIP3 2.5 1 dBm Input Return Loss R.L.in 13.5 15 dB Output Return Loss R.L.out 13.5 21 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Table 11 AC Characteristics, VC = 3 V, f = 2400 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. NFmin Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA Max. 1.1 1.05 Noise Figure in 50Ω System2) NF50 dB 1.15 1.1 Transducer Gain |S21|² Maximum Available Power Gain Gma 17 18.5 dB dB 17.5 19 Input 1 dB Gain compression point3) IP1dB -3.5 -5.5 dBm Input 3rd Order Intercept Point IIP3 3 1 dBm Data Sheet 11 Rev. 1.0, 2009-04-17 BGB741L7ESD Electrical Characteristics Table 11 AC Characteristics, VC = 3 V, (cont’d)f = 2400 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. Input Return Loss R.L.in 12.5 13.5 dB Output Return Loss R.L.out 12.5 18 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Table 12 AC Characteristics, VC = 3 V, f = 3500 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. NFmin Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. 1.25 1.2 Noise Figure in 50Ω System2) NF50 dB 1.35 1.25 Transducer Gain |S21|² Maximum Available Power Gain Gma 15 16.5 dB dB 16 17.5 Input 1 dB Gain compression point3) IP1dB -2.5 -4.5 dBm Input 3rd Order Intercept Point IIP3 3.5 1.5 dBm Input Return Loss R.L.in 10 10.5 dB Output Return Loss R.L.out 10 13.5 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Data Sheet 12 Rev. 1.0, 2009-04-17 BGB741L7ESD Electrical Characteristics Table 13 AC Characteristics, VC = 3 V, f = 5500 MHz Parameter Symbol Values Min. Minimum Noise Figure 1) Typ. NFmin Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA ZS = ZL= 50Ω IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Max. 1.8 1.75 Noise Figure in 50Ω System2) NF50 dB 1.95 1.85 Transducer Gain |S21|² Maximum Available Power Gain Gma 12 13 dB dB 14 15 Input 1 dB Gain compression point3) IP1dB -1 -3 dBm Input 3rd Order Intercept Point IIP3 8.5 4 dBm Input Return Loss R.L.in 7 8 dB Output Return Loss R.L.out 7 8.5 dB 1) Test fixture losses extracted 2) Test fixture losses extracted 3) Measured on an application board according to figure 2) presenting roughly a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Data Sheet 13 Rev. 1.0, 2009-04-17 BGB741L7ESD Package Information Package Information Top view Bottom view +0.1 0.4 1.3±0.05 0.05 MAX. 1 ±0.05 6 1.2±0.0351) 7 3 Pin 1 marking 2 1 6 x 0.2±0.0351) GPC09484 1) Dimension applies to plated terminal Package Outline of TSLP-7-1 NSMD SMD Solder mask 0.2 0.3 R0.1 0.3 0.2 0.2 0.25 0.25 1.9 0.2 0.25 1.9 1.9 0.25 0.3 Copper 0.25 0.2 0.2 0.25 0.2 0.2 0.3 0.2 0.2 1.9 0.3 1.4 0.2 1.4 0.2 1.4 0.2 1.4 0.3 Stencil apertures Copper Solder mask 0.2 Figure 5 2 ±0.05 5 6 x 0.2±0.0351) 1.7±0.05 4 1.1±0.0351) 7 0.25 0.25 R0.1 Stencil apertures TSLP-7-1-FP V01 Figure 6 Foot Print of TSLP-7-1 BGB741L7ESD Type Code AY AX Figure 7 Marking Layout of TSLP-7-1 0.5 8 2.18 4 Pin 1 marking Figure 8 Data Sheet 1.45 CPSG9506 Tape of TSLP-7-1 14 Rev. 1.0, 2009-04-17