DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. • The transistors are intended for use in output, driver or pre-driver stages in VHF and UHF equipment. PINNING - TO-39/1 PIN DESCRIPTION 1 emitter 2 base 3 1 2 handbook, halfpage collector MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCER PARAMETER CONDITIONS UNIT − 55 V − 40 V − 30 V − 20 V 2N3866 − 3.5 V 2N4427 − 2.0 V − 0.4 A 2N4427 collector-emitter voltage open base 2N3866 2N4427 VEBO MAX. RBE = 10 Ω collector-emitter voltage 2N3866 VCEO MIN. emitter-base voltage open collector IC collector current (DC) IC(AV) average collector current measured over any 20 ms period − 0.4 A Ptot total power dissipation up to Tmb = 25 °C − 3.5 W fT transition frequency IC = 50 mA; VCE = 15 V; f = 200 MHz 500 − MHz Tj junction temperature − 200 °C RF performance TYPE NUMBER f (MHz) VCE (V) Po (W) Gp (dB) η (%) 2N3866 400 28 1 >10 >45 2N4427 175 12 1 >10 >50 1995 Oct 27 2 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N3866 − 55 V 2N4427 − 40 V 2N3866 − 55 V 2N4427 − 40 V 2N3866 − 30 V 2N4427 − 20 V 2N3866 − 3.5 V 2N4427 − 2.0 V − 0.4 A − 0.4 A − 0.4 A − 3.5 W collector-emitter voltage collector-emitter voltage emitter-base voltage RBE = 10 Ω open base open collector IC collector current (DC) IC(AV) average collector current ICM collector current peak value Ptot total power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C measured over any 20 ms period up to Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 200 K/W Rth j-mb thermal resistance from junction to mounting base 50 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 1.0 K/W note 2 2.5 K/W Notes 1. Mounted with top clamping washer 56218. 2. Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation. 1995 Oct 27 3 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 MGC589 MGC590 4 1 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 3 10 1 2 1 (1) (2) 0 10 2 1 10 VCE (V) 0 10 2 50 100 150 200 Tmb (oC) Tmb = 25 °C. (1) 2N4427. (2) 2N3866. Fig.2 DC SOAR. 1995 Oct 27 Fig.3 Power derating curve. 4 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO PARAMETER CONDITIONS collector-base breakdown voltage 55 − V − V open base; IC = 5 mA 2N3866 30 − V 2N4427 20 − V 2N3866 55 − V 2N4427 40 − V RBE = 10 Ω; IC = 5 mA open collector; IE = 100 µA 2N3866 3.5 − V 2N4427 2 − V 2N3866 − 1 V 2N4427 − 0.5 V collector-emitter saturation voltage VCEsat open emitter; IC = 100 µA 40 emitter-base breakdown voltage V(BR)EBO UNIT 2N3866 collector-emitter breakdown voltage V(BR)CER MAX. 2N4427 collector-emitter breakdown voltage V(BR)CEO MIN. IC = 100 mA; IB = 20 mA collector leakage current ICEO 2N3866 open base; VCE = 28 V − 20 µA 2N4427 open base; VCE = 12 V − 20 µA 2N3866 IC = 50 mA; VCE = 5 V 10 200 2N3866 IC = 360 mA; VCE = 5 V 5 − 2N4427 IC = 100 mA; VCE = 5 V 10 200 2N4427 IC = 360 mA; VCE = 5 V 5 − IC = 50 mA; VCE = 15 V; f = 200 MHz 500 − MHz 2N3866 VCB = 28 V; IE = Ie = 0; f = 1 MHz − 3 pF 2N4427 VCB = 12 V; IE = Ie = 0; f = 1 MHz − 4 pF DC current gain hFE fT transition frequency Cc collector capacitance APPLICATION INFORMATION Table 1 RF performance at Tmb = 25 °C. TYPE NUMBER f (MHz) VCE (V) Po (W) Gp (dB) IC (mA) η (%) 2N3866 100 28 1.8 >10 <107 >60 250 28 1.5 >10 <107 >50 2N4427 1995 Oct 27 400 28 1.0 >10 <79 >45 175 12 1.0 >10 <167 >50 470 12 0.4 >10 67 50 5 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 Ruggedness The transistors are capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases, under the conditions mentioned in Table 1. C3 handbook, full pagewidth DUT C2 input 50 Ω L5 output 50 Ω C4 L4 L1 L2 MGC941 C6 L3 C7 C1 R2 R1 C5 VEE VEE = −28 V Fig.4 Test circuit for the 2N3866 at 400 MHz. List of components (see Fig.4) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2, C3 air trimmer capacitor 4 to 29 pF C4 air trimmer capacitor 4 to 14 pF C5 feed-through capacitor 1 nF C6 capacitor 12 pF C7 capacitor 12 nF R1 resistor 5.6 Ω R2 resistor 10 Ω L1 2 turns 1.0 mm copper wire − L2 Ferroxcube choke coil Z = 450 Ω; f = 250 MHz L3, L4 6 turns enamelled 0.5 mm copper wire 100 nH int. diameter 3.5 mm L5 2 turns 1.0 mm copper wire − int. diameter 7 mm; winding pitch 2.5 mm; leads 2 × 15 mm 1995 Oct 27 CATALOGUE No. int. diameter 6 mm; winding pitch 3 mm 6 4312 020 36690 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 VCC handbook, full pagewidth C6 C5 R L3 C1 (1) C2 output 50 Ω DUT L1 input 50 Ω C3 L4 C4 L2 MGC940 VCC = +12 V. (1) The length of the external emitter wire is 1.6 mm. Fig.5 Test circuit for the 2N4427 at 175 MHz. List of components (see Fig.5) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2, C3, C4 air trimmer capacitor 4 to 29 pF C5 feed-through capacitor 1 nF C6 capacitor 12 nF R resistor 10 Ω L1 2 turns 1.0 mm copper wire − L2 Ferroxcube choke coil Z = 550 Ω; f = 175 MHz L3 2 turns 1.0 mm copper wire − int. diameter 5 mm; winding pitch 2 mm; leads 2 × 10 mm L4 3 turns 1.5 mm copper wire − int. diameter 10 mm; winding pitch 2 mm; leads 2 × 15 mm 1995 Oct 27 CATALOGUE No. int. diameter 6 mm; winding pitch 2 mm; leads 2 × 10 mm 7 4312 020 36640 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 PACKAGE OUTLINE handbook, full pagewidth 0.86 max 45 o 1 0.51 max 2 8.5 max 1.0 max 3 5.08 6.6 max 9.4 max Dimensions in mm. Fig.6 TO-39. 1995 Oct 27 8 12.7 min MSA241 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors 2N3866; 2N4427 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Oct 27 9