INTEGRATED CIRCUITS
AU5790
Single wire CAN transceiver
Product data
Supersedes data of 2001 Jan 31
IC18 Data Handbook
2001 May 18
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
FEATURES
DESCRIPTION
• Supports in-vehicle class B multiplexing via a single bus line with
The AU5790 is a line transceiver, primarily intended for in-vehicle
multiplex applications. The device provides an interface between a
CAN data link controller and a single wire physical bus line. The
achievable bus speed is primarily a function of the network time
constant and bit timing, e.g., up to 33.3 kbps with a network
including 32 bus nodes. The AU5790 provides advanced
sleep/wake-up functions to minimize power consumption when a
vehicle is parked, while offering the desired control functions of the
network at the same time. Fast transfer of larger blocks of data is
supported using the high-speed data transmission mode.
ground return
• 33 kbps CAN bus speed with loading as per J2411
• 83 kbps high-speed transmission mode
• Low RFI due to output waveshaping
• Direct battery operation with protection against load dump, jump
start and transients
• Bus terminal protected against short-circuits and transients in the
automotive environment
• Built-in loss of ground protection
• Thermal overload protection
• Supports communication between control units even when
network in low-power state
• 70 µA typical power consumption in sleep mode
• 8- and 14-pin small outline packages
• ±8 kV ESD protection on bus and battery pins
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VBAT
Operating supply voltage
Tamb
Operating ambient temperature range
VBATld
Battery voltage
VCANHN
Bus output voltage
VT
tTrN
CONDITIONS
MIN.
5.3
TYP.
13
MAX.
UNIT
27
V
+125
°C
+40
V
3.65
4.55
V
Bus input threshold
1.8
2.2
V
Bus output delay, rising edge
3
6.3
µs
tTfN
Bus output delay, falling edge
3
9
µs
tDN
Bus input delay
0.3
1
µs
IBATS
Sleep mode supply current
100
µA
–40
load dump; 1s
70
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
SO8: 8-pin plastic small outline package
–40 °C to +125 °C
AU5790D
SOT96–1
SO14: 14-pin plastic small outline package
–40 °C to +125 °C
AU5790D14
SOT108–1
2001 May 18
2
853-2237 26343
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
BLOCK DIAGRAM
BATTERY (+12V)
BAT
1
VOLTAGE
TEMP.
REFERENCE
PROTECTION
TxD
NSTB
OUTPUT
BUFFER
7
CANH
(BUS)
3
(Mode 0)
MODE
BUS
RECEIVER
CONTROL
6
EN
(Mode 1)
RT
RxD
5
4
LOSS OF
GROUND
PROTECTION
RTH
(LOAD)
AU5790
8
GND
SL01199
Figure 1.
2001 May 18
Block Diagram
3
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SO8 PIN CONFIGURATION
TxD
1
NSTB (Mode 0)
2
SO14 PIN CONFIGURATION
8
GND
7
CANH (BUS)
6
RTH (Load)
5
BAT
GND
1
14
GND
TxD
2
13
N.C.
NSTB (Mode 0)
3
12
CANH (BUS)
EN (Mode 1)
4
11
RTH (Load)
RxD
5
10
BAT
N.C.
6
9
N.C.
GND
7
8
GND
AU5790
EN (Mode 1)
3
RxD
4
AU5790
SO8
SL01198
SO14
SO8 PIN DESCRIPTION
SYMBOL
PIN
DESCRIPTION
TxD
1
Transmit data input: high = transmitter passive;
low = transmitter active
NSTB
(Mode 0)
2
Stand-by control: high = normal and
high-speed mode; low = sleep and wake-up
mode
EN
(Mode 1)
3
Enable control: high = normal and wake-up
mode; low = sleep and high-speed mode
RxD
4
Receive data output: low = active bus condition
detected; float/high = passive bus condition
detected
BAT
5
Battery supply input (12 V nom.)
RTH
(LOAD)
6
Switched ground pin: pulls the load to ground,
except in case the module ground is
disconnected
CANH
(BUS)
7
Bus line transmit input/output
GND
8
Ground
SL01251
SO14 PIN DESCRIPTION
SYMBOL
PIN
DESCRIPTION
GND
1
Ground
TxD
2
Transmit data input: high = transmitter passive;
low = transmitter active
NSTB
(Mode 0)
3
Stand-by control: high = normal and
high-speed mode; low = sleep and wake-up
mode
EN
(Mode 1)
4
Enable control: high = normal and wake-up
mode; low = sleep and high-speed mode
RxD
5
Receive data output: low = active bus condition
detected; float/high = passive bus condition
detected
N.C.
6
No connection
GND
7
Ground
GND
8
Ground
N.C.
9
No connection
BAT
10
Battery supply input (12 V nom.)
RTH
11
Switched ground pin: pulls the load to ground,
except in case the module ground is
disconnected
12
Bus line transmit input/output
N.C.
13
No connection
GND
14
Ground
(LOAD)
CANH
(BUS)
2001 May 18
4
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
of signal edges on the bus line. If such edges are detected, this will
be signalled to the CAN controller via the RxD output. Normal
transmission mode will be entered again upon a high level being
applied to the NSTB and EN control inputs. These signals are
typically being provided by a controller device.
FUNCTIONAL DESCRIPTION
The AU5790 is an integrated line transceiver IC that interfaces a
CAN protocol controller to the vehicle’s multiplexed bus line. It is
primarily intended for automotive “Class B” multiplexing applications
in passenger cars using a single wire bus line with ground return.
The achievable bit rate is primarily a function of the network time
constant and the bit timing parameters. For example, the maximum
bus speed is 33 kpbs with bus loading as specified in J2411 for a full
32 node bus, while 41.6 kbps at is possible with modified bus
loading. The AU5790 also supports low-power sleep mode to help
meet ignition-off current draw requirements.
Sleeping bus nodes will generally ignore normal communication on
the bus. They should be activated using the dedicated wake-up
mode. When NSTB is low and EN is high the AU5790 enters
wake-up mode i.e. it sends data with an increased signal level. This
will result in an activation of other bus nodes being attached to the
network.
The protocol controller feeds the transmit data stream to the
transceiver’s TxD input. The AU5790 transceiver converts the TxD
data input to a bus signal with controlled slew rate and waveshaping
to minimize emissions. The bus output signal is transmitted via the
CANH in/output, connected to the physical bus line. If TxD is low,
then a typical voltage of 4 V is output at the CANH pin. If TxD is high
then the CANH output is pulled passive low via the local bus load
resistance RT. To provide protection against a disconnection of the
module ground, the resistor RT is connected to the RTH pin of the
AU5790. By providing this switched ground pin, no current can flow
from the floating module ground to the bus. The bus receiver detects
the data stream on the bus line. The data signal is output at the RxD
pin being connected to a CAN controller. The AU5790 provides
appropriate filtering to ensure low susceptibility against
electromagnetic interference. Further enhancement is possible with
applying an external capacitor between CANH and ground potential.
The device features low bus output leakage current at power supply
failure situations.
The AU5790 also provides a high-speed transmission mode
supporting bit rates up to 100 kbps. If the NSTB input is pulled high
and the EN input is low, then the internal waveshaping function is
disabled, i.e. the bus driver is turned on and off as fast as possible
to support high-speed transmission of data. Consequently, the EMC
performance is degraded in this mode compared to the normal
transmission mode. In high-speed transmission mode the AU5790
supports the same bus signal level as specified for the CANH output
in normal mode.
The AU5790 features special robustness at its BAT and CANH pins.
Hence the device is well suited for applications in the automotive
environment. The BAT input is protected against 40 V load dump
and jump start condition. The CANH output is protected against
wiring fault conditions, e.g., short circuit to ground or battery voltage,
as well as typical automotive transients. In addition, an
over-temperature shutdown function with hysteresis is incorporated
protecting the device under system fault conditions. In case of the
chip temperature reaching the trip point, the AU5790 will latch-off
the transmit function. The transmit function is available again after a
small decrease of the chip temperature. The AU5790 contains a
power-on reset circuit. For Vbat < 2.5 V, the CANH output drive will
be turned off, the output will be passive, and RxD will be high. For
2.5 V < Vbat < 5.3 V, the CANH output drive may operate normally or
be turned off.
If the NSTB and EN control inputs are pulled low or floating, the
AU5790 enters a low-power or “sleep” mode. This mode is
dedicated to minimizing ignition-off current drain, to enhance system
efficiency. In sleep mode, the bus transmit function is disabled, e.g.
the CANH output is inactive even when TxD is pulled low. An
internal network active detector monitors the bus for any occurrence
Table 1. Control Input Summary
NSTB
EN
0
0
Don’t Care
TxD
Sleep mode
Description
0V
CANH
float (high)
RxD
0
1
Tx-data
Wake-up transmission mode
0 V, 12 V
bus state1
1
0
Tx-data
High-speed transmission mode
0 V, 4 V
bus state1
1
1
Tx-data
Normal transmission mode
0 V, 4 V
bus state1
NOTE:
1. RxD outputs the bus state. If the bus level is below the receiver threshold (i.e., all transmitters passive), then RxD will be floating (i.e., high,
considering external pull-up resistance). Otherwise, if the bus level is above the receiver threshold (i.e., at least one transmitter is active),
then RxD will be low.
2001 May 18
5
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
ABSOLUTE MAXIMUM RATINGS
According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to
pin 8 (GND); positive currents flow into the IC, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
–0.3
+27
V
VBAT
Supply voltage
Steady state
VBATld
Short-term supply voltage
Load dump; ISO7637/1 test pulse 5
(SAE J1113, test pulse 5), T < 1s
+40
V
VBATtr2
Transient supply voltage
ISO 7637/1 test pulse 2 (SAE J1113,
test pulse 2), with series diode and
bypass cap of 100 nF between BAT and
GND pins, Note 2.
+100
V
VBATtr3
Transient supply voltage
ISO 7637/1 pulses 3a and 3b
(SAE J1113 test pulse 3a and 3b),
Note 2.
–150
+100
V
VCANH_1
CANH voltage
VBAT > 2 V
–10
+18
V
VCANH_0
CANH voltage
VBAT < 2 V
–16
+18
V
VCANHtr1
Transient bus voltage
ISO 7637/1 test pulse 1, Notes 1 and 2
–100
VCANHtr2
Transient bus voltage
ISO 7637/1 test pulse 2, Notes 1 and 2
VCANHtr3
Transient bus voltage
ISO 7637/1 test pulses 3a, 3b,
Notes 1 and 2
VRTH1
Pin RTH voltage
VRTH0
Pin RTH voltage
VI
DC voltage on pins TxD, EN, RxD, NSTB
ESDBAHB
ESD capability of pin BAT
ESDCHHB
V
+100
V
–150
+100
V
VBAT > 2 V, voltage applied to pin RTH
via a 2 kΩ series resistor
–10
+18
V
VBAT < 2 V, voltage applied to pin RTH
via a 2 kΩ series resistor
–16
+18
V
–0.3
+7
V
Direct contact discharge,
R=1.5 kΩ, C=100 pF
–8
+8
kV
ESD capability of pin CANH
Direct contact discharge,
R=1.5 kΩ, C=100 pF
–8
+8
kV
ESDRTHB
ESD capability of pin RTH
Direct contact discharge,
R=1.5 kΩ + 3 kΩ, C=100 pF
–8
+8
kV
ESDLGHB
ESD capability of pins TxD, NSTB, EN, RxD, and
RTH
Direct contact discharge,
R=1.5 kΩ , C=100 pF
–2
+2
kV
RTmin
Bus load resistance RT being connected to pin
RTH
Tamb
Operating ambient temperature
–40
+125
°C
Tstg
Storage temperature
–40
+150
°C
Tvj
Junction temperature
–40
+150
°C
2
NOTES:
1. Test pulses are coupled to CANH through a series capacitance of 1 nF.
2. Rise time for test pulse 1: tr < 1 µs; pulse 2: tr < 100 ns; pulses 3a/3b: tr < 5 ns.
2001 May 18
6
kΩ
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
DC CHARACTERISTICS
–40 °C < Tamb < +125 °C; 5.5 V < VBAT < 16 V; –0.3 V < VTxD < 5.5 V; –0.3 V < VNSTB < 5.5 V; –0.3 V < VEN < 5.5 V; –0.3 V < VRxD < 5.5 V;
–1 V < VCANH < +16 V; bus load resistor at pin RTH: 2 kΩ < RT < 9.2 kΩ; total bus load resistance 270 Ω < RL < 9.2 kΩ;
CL < 13.7 nF; 1µs < RL ∗ CL < 4µs; RxD pull-up resistor 2.2 kΩ < Rd < 3.0 kΩ; RxD: loaded with CLR < 30pF to GND;
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at VBAT = 13 V and Tamb = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
13
27
V
5.3
V
2.5
V
Pin BAT
VBAT
Operating supply voltage
Note 1
5.3
VBATL
Low battery state
Part functional or in undervoltage
lockout state
2.5
VBATLO
Supply undervoltage lockout state
TxD = 1 or 0; check CANH and
RxD are floating
IBATPN
Passive state supply current in
normal mode
NSTB = 5 V, EN = 5 V, TxD = 5 V
2
mA
IBATPW
Passive state supply current in
wake-up mode
NSTB = 0 V, EN = 5 V, TxD = 5 V,
Note 2
3
mA
IBATPH
Passive state supply current in
high speed mode
NSTB = 5 V, EN = 0 V, TxD = 5 V,
Note 2
4
mA
IBATN
Active state supply current in
normal mode
NSTB = 5 V, EN = 5 V, TxD = 0 V,
RL = 270 Ω, Tamb = 125 °C
35
mA
Tamb = 25 °C, –40 °C
40
mA
NSTB = 0 V, EN = 5 V, TxD = 0 V,
RL = 270 Ω, Note 2,
Tamb = 125 °C
70
mA
Tamb = 25 °C, –40 °C, Note 2
90
mA
NSTB = 5 V, EN = 0 V, TxD = 0 V,
RL = 100 Ω, Note 2,
Tamb = 125 °C
70
mA
Tamb = 25 °C, –40 °C, Note 2
85
mA
70
100
µA
4.1
4.55
V
IBATW
Active state supply current in
wake-up mode
IBATH
Active state supply current in
high speed mode
IBATS
Sleep mode supply current
NSTB = 0 V, EN = 0 V, TxD = 5 V,
RxD = 5 V, –1 V < VCANH < +1 V,
5.5 V < VBAT < 14 V
–40 °C < Tj < 125 °C
VCANHN
Bus output voltage in normal
mode
NSTB = 5 V, EN = 5 V,
RL > 270Ω; 5.5 V < VBAT < 27 V
3.65
VCANHW
Bus output voltage in wake-up
mode
NSTB = 0 V, EN = 5 V,
RL > 270Ω; 11.3 V < VBAT < 16 V
9.80
min
(VBAT, 13)
V
VCANHWL
Bus output voltage in wake-up
mode, low battery
NSTB = 0 V, EN = 5 V,
RL > 270Ω; 5.5 V < VBAT < 11.3 V
VBAT –
1.45
VBAT
V
VCANHH
Bus output voltage in high-speed
transmission mode
NSTB = 5 V, EN = 0 V,
RL > 100Ω; 8 V < VBAT < 16 V
3.65
4.55
V
ICANHRR
Recessive state output current,
bus recessive
Recessive state or sleep mode,
VCANH = –1 V; 0 V < VBAT < 27 V
–10
10
µA
ICANHRD
Recessive state output current,
bus dominant
Recessive state or sleep mode,
VCANH = 10 V; 0 V < VBAT < 16 V
–20
100
µA
ICANHDD
Dominant state output current,
bus dominant
TxD = 0 V, normal mode,
high-speed mode and sleep mode;
VCANH = 10 V;
0 V < VBAT < 16 V
–20
100
µA
–ICANH_N
Bus short circuit current,
normal mode
VCANH = –1 V,
TxD = 0 V; NSTB = 5 V; EN = 5 V
30
150
mA
–ICANHW
Bus short circuit current,
wake-up mode
VCANH = –1 V,
TxD = 0 V; NSTB = 0 V; EN = 5 V
60
190
mA
Pin CANH
2001 May 18
7
Philips Semiconductors
Product data
Single wire CAN transceiver
SYMBOL
AU5790
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin CANH (continued)
–ICANHH
Bus short circuit current in
high-speed mode
VCANH = –1 V,
TxD = 0 V; NSTB = 5 V; EN = 0 V;
8 V < VBAT < 16 V
50
190
mA
ICANLG
Bus leakage current at loss of
ground
(I_CAN_LG = I_CANH + I_RTH)
0 V < VBAT < 16 V;
see Figure 3 in the test circuits
section
–50
50
µA
Tsd
Thermal shutdown
Note 2
155
190
°C
Thys
Thermal shutdown hysteresis
Note 2
5
15
°C
VT
Bus input threshold
5.8 V < VBAT < 27 V,
all modes except sleep mode
1.8
2.2
V
VTL
Bus input threshold, low battery
5.5 V < VBAT < 5.8 V,
all modes except sleep mode
1.5
2.2
V
VTS
Bus input threshold in sleep mode
NSTB = 0 V, EN = 0 V,
VBAT > 11.3 V
6.15
8.1
V
VTSL
Bus input threshold in sleep mode,
low battery
NSTB = 0 V, EN = 0 V,
5.5 V < VBAT < 11.3 V
VBAT – 4.3
VBAT – 3.25
V
VRTH1
Voltage on switched ground pin
IRTH = 1 mA
0.1
V
VRTH2
Voltage on switched ground pin
IRTH = 6 mA
1
V
Vih
High level input voltage
5.5 V < VBAT < 27 V
Vil
Low level input voltage
5.5 V < VBAT < 27 V
Ii
Input current
Vi = 1 V and Vi = 5 V
Vitxd
TxD input threshold
5.5 V < VBAT < 27 V
1
3
V
–Iiltxd
TxD low level input current in
normal mode
NSTB = 5 V, EN = 5 V, VTxD = 0 V
50
180
µA
–Iihtxd
TxD high level input current in
sleep mode
NSTB = 0 V, EN = 0 V, VTxD = 5 V
–5
10
µA
Volrxd
RxD low level output voltage
IRxD = 2.2 mA;
VCANH = 10 V, all modes
0.45
V
Iolrxd
RxD low level output current
VRxD = 5 V; VCANH = 10 V
3
35
mA
Iohrxd
RxD high level leakage
VRxD = 5 V; VCANH = 0 V,
all modes
–10
+10
µA
Pin RTH
Pins NSTB, EN
3
15
V
1
V
50
µA
Pin TxD
Pin RxD
NOTES:
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < VBAT < 27 V) for up to two
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, Tsd, otherwise the device
will self protect. Typically these requirements will be encountered during jump start operation at Tamb 85 °C and VBAT < 27 V. Refer to the
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.
2. This parameter is characterized but not subject to production test.
2001 May 18
8
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Dynamic (AC) CHARACTERISTICS for 33 kbps operation
–40 °C < Tamb < +125 °C; 5.5 V < VBAT < 16 V; –0.3 V < VTxD < 5.5 V; –0.3 V < VNSTB < 5.5 V; –0.3 V < VEN < 5.5 V; –0.3 V < VRxD < 5.5 V;
–1 V < VCANH < +16 V; bus load resistor at pin RTH: 2 kΩ < RT < 9.2 kΩ; total bus load resistance 270 Ω < RL < 9.2 kΩ;
CL < 13.7 nF; 1µs < RL ∗ CL < 4µs; RxD pull-up resistor 2.2 kΩ < Rd < 3.0 kΩ; RxD: loaded with CLR < 30pF to GND;
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at VBAT = 13 V and Tamb = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin CANH
VdBAMN
CANH harmonic content in
normal mode
NSTB = 5 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
fTxD = 20 kHz, 50% duty cycle;
8 V < VBAT< 16 V;
0.53 MHz < f < 1.7 MHz, Note 2
70
dBµV
VdBAMW
CANH harmonic content in
wake-up mode
NSTB = 5 V, EN = 0 V;
RL = 270 Ω, CL = 15 nF;
fTxD = 20 kHz, 50% duty cycle;
8 V < VBAT< 16 V;
0.53 MHz < f < 1.7 MHz, Note 2
80
dBµV
Pins NSTB, EN
tNH
Normal mode to high-speed mode
delay
30
µs
tHN
High-speed mode to normal mode
delay
30
µs
tWN
Wake-up mode to normal mode
delay
30
µs
tNS
Normal mode to sleep mode delay
500
µs
tSN
Sleep mode to normal mode delay
50
µs
8 V < VBAT < 16 V
Pin TxD
tTrN
Transmit delay in normal mode,
bus rising edge
NSTB = 5 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT < 27 V;
measured from the falling edge on
TxD to VCANH = 3.0 V
3
6.3
µs
tTfN
Transmit delay in normal mode,
bus falling edge
NSTB = 5 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT< 27 V;
measured from the rising edge on
TxD to VCANH = 1.0 V
3
9
µs
tTrW
Transmit delay in wake-up mode,
bus rising edge to normal levels
NSTB = 0 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT < 27 V;
measured from the falling edge on
TxD to VCANH = 3.0 V
3
6.3
µs
tTrW-S
Transmit delay in wake-up mode,
bus rising edge to wake-up level
NSTB = 0 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
11.3 V < VBAT < 27 V;
measured from the falling edge on
TxD to VCANH = 8.9 V
3
18
µs
tTfW-3.6
Transmit delay in wake-up mode,
bus falling edge with 3.6 µs time
constant
NSTB = 0 V, EN = 5 V;
RL = 270 Ω, CL = 13.3 nF;
5.5 V < VBAT < 27 V;
measured from the rising edge on
TxD to VCANH = 1 V, Note 2
3
12.7
µs
tTfW-4.0
Transmit delay in wake-up mode,
bus falling edge with 4.0 µs time
constant
NSTB = 0 V, EN = 5 V;
RL = 270 Ω, CL = 15 nF;
5.5 V < VBAT < 27 V;
measured from the rising edge on
TxD to VCANH = 1 V
3
13.7
µs
2001 May 18
9
Philips Semiconductors
Product data
Single wire CAN transceiver
SYMBOL
PARAMETER
AU5790
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin TxD (continued)
tTrHS
Transmit delay in high-speed
mode, bus rising edge
NSTB = 5 V, EN = 0 V;
RL = 100 Ω, CL = 15 nF;
8 V < VBAT < 16 V;
measured from the falling edge on
TxD to VCANH = 3.0 V
0.1
1.5
µs
tTfHS
Transmit delay in high-speed
mode, bus falling edge
NSTB = 5 V, EN = 0 V;
RL = 100 Ω, CL = 15 nF;
8 V < VBAT < 16 V;
measured from the rising edge on
TxD to VCANH = 1.0 V
0.2
3
µs
tDN
Receive delay in normal mode,
bus rising and falling edge
NSTB = 5 V, EN = 5 V;
5.5 V < VBAT < 27 V;
CANH to RxD time measured from
VCANH = 2.0 V to VRxD = 2.5 V
0.3
1
µs
tDW
Receive delay in wake-up mode,
bus rising and falling edge
NSTB = 0 V, EN = 5 V;
5.5 V < VBAT < 27 V;
CANH to RxD time measured from
VCANH = 2.0 V to VRxD = 2.5 V
0.3
1
µs
tDHS
Receive delay in high-speed
mode, bus rising and falling edge
NSTB = 5 V, EN = 0 V;
8 V < VBAT < 16 V;
CANH to RxD time measured from
VCANH = 2.0 V to VRxD = 2.5 V
0.3
1
µs
tDS
Receive delay in sleep mode,
bus rising edge
NSTB = 0 V, EN = 0 V;
CANH to RxD time, measured from
VCANH = min {(VBAT – 3.78 V),
7.13 V} to VRxD = 2.5 V
10
70
µs
Pin RxD
NOTES:
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < VBAT < 27 V) for up to two
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, Tsd, otherwise the device
will self protect. Typically these requirements will be encountered during jump start operation at Tamb 85 °C and VBAT < 27 V. Refer to the
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.
2. This parameter is characterized but not subject to production test.
2001 May 18
10
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
TxD
50%
tTf
tTr
CANH
3V
2V
1V
RxD
tD
tD
50%
SL01255
NOTE:
1. When AU5790 is in normal, high-speed, or wake-up mode, the transmit delay in rising edge tTr may be expressed as tTrN, tTrHS, or tTrW,
respectively; the transmit delay in falling edge tTf may be expressed as tTfN, tTfHS, or tTfW, respectively; and the receive delay tD as tDN,
tDHS, or tDW, respectively.
Figure 2.
Timing Diagrams: Pin TxD, CANH, and RxD
2001 May 18
11
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
TEST CIRCUITS
5.1V
TxD
S1
EN
S2
GND
NSTB
CANH
AU5790
RxD
1.5 k
RTH
BAT
1 µF
9.1 kΩ
S3
I_CAN_LG
2.4 kΩ
VBAT
SL01234
Figure 3.
Loss of ground test circuit
NOTES:
Opening S3 simulates loss of module ground.
Check I_CAN_LG with the following switch positions to simulate loss of ground in all modes:
1. S1 = open = S2
2. S1 = open, S2 = closed
3. S1 = closed, S2 = open
4. S1 = closed = S2
2001 May 18
12
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
APPLICATION INFORMATION
The information in this section is not part of the IC specification, but is presented for information purposes only. Additional information on single
wire CAN networks, application circuits, and thermal management are included in application note AN2005.
CAN CONTROLLER
(e.g. SJA1000)
TX0
PORT
PORT
RX0
RD
+5V
2.4 to
2.7kΩ
TxD
NSTB
RxD
1N5060
or equiv.
EN
+12V
BAT
AU5790
100 nF
TRANSCEIVER
1 to 4.7 µF
GND
CANH
RTH
9.1kΩ,
1%
RT
L
47 µH
CL
10%
220 pF
CAN BUS LINE
Note 1
Note 2
TX0 should be configured to push-pull operation, active low; e.g., Output Control Register = 1E hex.
Recommended range for the load resistor is 3k < RT < 11k.
Figure 4.
SL01200
Application circuit example for the AU5790
AU5790 transceivers may require additional PCB surface at ground pin(s) as heat conductor(s) in order to meet thermal requirements. See
thermal characteristics section for details.
Table 2. Maximum CAN Bit Rate
MODE
MAXIMUM BIT RATE AT 0.35% CLOCK ACCURACY
Normal transmission
33.3 kbps
High-speed transmission
83.3 kbps
Sample point as % of bit time
85%
1.0 to 4.0 µs
Bus Time constant, normal mode
2001 May 18
13
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
THERMAL CHARACTERISTICS
Tj =Ta + Pd * θja
The AU5790 provides protection from thermal overload. When the
IC junction temperature reaches the threshold (≈155 °C), the
AU5790 will disable the transmitter drivers, reducing power
dissipation to protect the device. The transmit function will become
available again after the junction temperature drops. The thermal
shutdown hysteresis is about 5 °C.
where: Tj is junction temperature (°C);
Ta is ambient temperature (°C);
Pd is dissipated power (W);
θja is thermal resistance (°C/W).
Thermal Resistance
Thermal resistance is the ability of a packaged IC to dissipate heat
to its environment. In semiconductor applications, it is highly
dependant on the IC package, PCBs, and airflow. Thermal
resistance also varies slightly with input power, the difference
between ambient and junction temperatures, and soldering material.
In order to avoid this transmit function shutdown, care must be taken
to not overheat the IC during application. The relationships between
junction temperature, ambient temperature, dissipated power, and
thermal resistance can be expressed as:
Figures 5 and 6 show the thermal resistance as the function of the
IC package and the PCB configuration, assuming no airflow.
Thermal resistance (C/W)
200
very low
conductance
board
150
100
low
conductance
board
50
high
conductance
board
0
0
50
100
150
200
250
SL01249
Cu area on fused pins (mm2)
Figure 5.
SO-8 Thermal Resistance vs. PCB Configuration, Note 1, 2, 3
Thermal resistance (C/W)
150
very low
conductance
board
100
low
conductance
board
high
conductance
board
50
0
0
100
200
300
400
500
SL01250
Cu area on fused pins (mm2)
Figure 6.
2001 May 18
SO-14 Thermal Resistance vs. PCB Configuration, Note 1, 2, 3
14
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Table 3 shows the maximum power dissipation of an AU5790 without tripping the thermal overload protection, for specified combinations of
package, board configuration, and ambient temperature.
Table 3. Maximum power dissipation
ΘJA
Ptot
Power Dissipation Max.
Board Type
Additional Foil Area for
Heat Dissipation
Thermal Resistance
Ta= 85 °C
Ta= 125 °C
K/W
mW
mW
SO-8 on High
Conductance Board
Normal traces
103
631
243
225 Sq. mm of copper
foil attached to pin 8.
82
793
305
SO-8 on Low
Conductance Board
Normal traces
163
399
153
225 Sq. mm of copper
attached to pin 8.
119
546
210
SO-8 on Very Low
Conductance Board
Normal traces
194
335
129
225 Sq. mm of copper
attached to pin 8.
135
481
185
SO-14 on High
Conductance Board
Normal traces
63
1032
397
105 Sq. mm of copper
attached to each of pins
1, 7, 8, & 14.
50
1300
500
SO-14 on Low
Conductance Board
Normal traces
103
631
243
105 Sq. mm of copper
attached to each of pins
1, 7, 8, & 14.
70
929
357
SO-14 on Very Low
Conductance Board
Normal traces
126
516
198
105 Sq. mm of copper
attached to each of pins
1, 7, 8, & 14.
82
793
305
NOTES:
1. The High Conductance board is based on modeling done to EIA/JEDEC Standard JESD51-7. The board emulated contains two one ounce
thick copper ground planes, and top surface copper conductor traces of two ounce (0.071 mm thickness of copper).
2. The Low Conductance board is based on modeling done to EIA/JEDEC Standard EIA/JESD51-3. The board does not contain any ground
planes, and the top surface copper conductor traces of two ounce (0.071 mm thickness of copper).
3. The Very Low Conductance board is based on the EIA/JESD51-3, however the thickness of the surface conductors has been reduced to
0.035 mm (also referred to as 1.0 Ounce copper).
4. The above mentioned JEDEC specifications are available from: http://www.jedec.org/
2001 May 18
15
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
ILOAD = VCANHN/RLOAD
Power Dissipation
Power dissipation of an IC is the major factor determining junction
temperature. AU5790 power dissipation in active and passive states
are different. The average power dissipation is:
IBATN = ILOAD + IINT
where:
Ptot = PINT*Dy + PPNINT * (1-Dy)
where:
IINT will decrease slightly when the node number
decreases. To simplify this analysis, we will assume IINT is
fixed.
Ptot is total dissipation power;
PINT is dissipation power in an active state;
PPNINT is dissipation power in a passive state;
IINT = IBATN (32 nodes) – ILOAD (32 nodes)
IBATN (32 nodes) may be found in the DC Characteristics
table.
Dy is duty cycle, which is the percentage of time that TxD
is in an active state during any given time duration.
A power dissipation example follows. The assumed values
are chosen from specification and typical applications.
At passive state there is no current going into the load. So
all of the supply current is dissipated inside the IC.
Assumptions:
PPNINT = VBAT * IBATPN
where:
IINT is an active state current dissipated within the IC in
normal mode.
VBAT = 13.4 V
RT = 9.1 kΩ
32 nodes
IBATPN = 2 mA
IBATN (32 nodes) = 35 mA
VCANHN = 4.55 V
Duty cycle = 50%
VBAT is the battery voltage;
IBATPN is the passive state supply current in normal mode.
In an active state, part of the supply current goes to the
load, and only part of the supply current dissipates inside
the IC, causing an incremental increase in junction
temperature.
Computations:
PINT = PBATAN – PLOADN
where:
RLOAD = 9.1 kΩ / 32 = 284.4 Ω
PPNINT = 13.4 V × 2 mA = 26.8 mW
ILOAD = 4.55 V / 284.4 Ω = 16mA
PLOADN = 4.55 V × 16 mA = 72.8 mW
IINT = 35 mA - 16 mA = 19 mA
PBATAN = 13.4 V × 35 mA = 469 mW
PINT = 469 mW - 72.8 mW = 396.2 mW
Ptot = 396.2 mW × 50% + 26.8 mW × (1-50%) = 211.5 mW
PBATAN is active state battery supply power in normal
mode;
PBATAN = VBAT * IBATAN
PLOADN is load power consumption in normal mode.
PLOADN = VCANHN * ILOADN
where:
IBATAN is active state supply current in normal mode;
Additional examples with various node counts are shown in Table 4.
VCANHN is bus output voltage in normal mode;
ILOADN is current going through load in normal mode.
Table 4. Representative Power Dissipation Analyses
Nodes
RLOAD
(Ω)
VBAT (V)
IBATPN
(mA)
PPNINT
(mW)
VCANHN
(V)
ILOAD
(mA)
IBATN
(mA)
IINT (mA)
PINT
(mW)
Dcycle
Ptot
(mW)
2
4550
13.4
2
26.8
4.55
1
20
19
263.5
0.5
145.1
10
910
13.4
2
26.8
4.55
5
24
19
298.9
0.5
162.8
20
455
13.4
2
26.8
4.55
10
29
19
343.1
0.5
184.9
32
284.4
13.4
2
26.8
4.55
16
35
19
396.2
0.5
211.5
2
4550
26.5
2
53
4.55
1
20
19
525.5
0.5
289.2
10
910
26.5
2
53
4.55
5
24
19
613.3
0.5
333.1
20
455
26.5
2
53
4.55
10
29
19
723
0.5
388
32
284.4
26.5
2
53
4.55
16
35
19
854.7
0.5
453.8
By knowing the maximum power dissipation, and the operation ambient temperature, the required thermal resistance without tripping the
thermal protection can be calculated, as shown in Figure 7. Then from Figure 5 or 6, a suitable PCB can be selected.
2001 May 18
16
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
500
THERMAL RESISTANCE (C/W)
450
400
Ptot = 453.8 mW
(Vbat = 26.5 V, 32 nodes)
350
300
Ptot = 333.1 mW
(Vbat = 26.5 V, 10 nodes)
250
Ptot = 211.5 mW
(Vbat = 13.4 V, 32 nodes)
200
150
100
50
0
50
60
70
80
90
100
110
120
130
SL01256
AMBIENT TEMPERATURE (°C)
Figure 7.
2001 May 18
Required Thermal Resistance vs. Ambient Temperature and Power Dissipation
17
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SO8: plastic small outline package; 8 leads; body width 3.9 mm
2001 May 18
18
SOT96-1
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
SO14: plastic small outline package; 14 leads; body width 3.9 mm
2001 May 18
19
SOT108-1
Philips Semiconductors
Product data
Single wire CAN transceiver
AU5790
Data sheet status
Data sheet status [1]
Product
status [2]
Definitions
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on
the Internet at URL http://www.semiconductors.philips.com.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Copyright Philips Electronics North America Corporation 2001
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 05-01
Document order number:
2001 May 18
20
9397 750 08401