PHILIPS TDA8040T

INTEGRATED CIRCUITS
DATA SHEET
TDA8040T
Quadrature demodulator
Objective specification
Supersedes data of 1995 Feb 07
File under Integrated Circuits, IC02
1996 Oct 08
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
It has been designed to operate in conjunction with the
TDA8041H to provide a complete QPSK demodulator.
FEATURES
• +5 V supply voltage
The design of this circuit has been optimized to provide the
best quadrature accuracy necessary for digital receiver
applications and particularly for digital television.
• Bandgap internal reference voltage
• Low crosstalk between I (in-phase) and Q (quadrature)
channel outputs
The TDA8040T includes two matched mixers, an
RF amplifier, a symmetrical Voltage Controlled Oscillator
(VCO), a frequency divider and two matched amplifiers.
Two external filters are required for the baseband filtering.
• High operating input sensitivity
• High Carrier-to-Noise Ratio (CNR) of the VCO.
APPLICATIONS
The VCO requires an external LC tank circuit with two
varicap diodes. This oscillator operates at twice the
IF carrier frequency and can be used in a carrier recovery
AFC loop.
• Quadrature Phase Shift Keying (QPSK) demodulation.
GENERAL DESCRIPTION
The TDA8040T is a monolitic bipolar IC dedicated for
quadrature demodulation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
ICC(tot)
total supply current
Vi(RF)
operating input voltage level
64
67
70
dBµV
fi(RF)
RF input signal frequency
10.7
−
150
MHz
VolQ(p-p)
I and Q output voltage
(peak-to-peak value)
−
0.5
−
V
Eφ(IQ)
phase error between the
I and Q channels
−
−
3
deg
EG(IQ)
gain error between the
I and Q channels
−
−
1
dB
EG(tilt)
gain tilt error in the I and Q channels
−
−
1
dB
αct(IQ)
crosstalk between the
I and Q channels
30
−
−
dB
IM3
intermodulation distortion in the
I and Q channels
40
−
−
dB
VCC = 5 V
4.5
5.0
5.5
V
70
79
90
mA
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
TDA8040T
1996 Oct 08
SO16
DESCRIPTION
plastic small outline package; 16 leads; body width 3.9 mm
2
VERSION
SOT109-1
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
BLOCK DIAGRAM
handbook, full pagewidth
VCC(A)
1
16
15
AMP
I
GND(D)
RF A
RF B
2
Iout
AMP
VOLTAGE
REFERENCE
3
÷2
AMP
14
13
0
4
5
12
Q
GND(A)
6
7
8
11
AMP
AMP
TDA8040T
10
9
MGE511
Fig.1 Block diagram.
1996 Oct 08
3
VCC(V)
VCOB
VCO
90
VCC(D)
Iin
VCOA
GND(V)
Qout
Qin
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
PINNING
SYMBOL
PIN
DESCRIPTION
VCC(A)
1
supply voltage for I and Q amplifiers
I
2
I channel buffer output
GND(D)
3
demodulator ground
RF A
4
RF input A
RF B
5
RF input B
VCC(D)
6
supply voltage for demodulator
Q
7
Q channel buffer output
GND(A)
8
I and Q amplifiers ground
RF B
5
12 VCOA
Qin
9
Q channel amplifier input
VCC(D)
6
11 GND(V)
Qout
10
Q channel amplifier output
Q
7
10 Qout
GND(A)
8
9
GND(V)
11
VCO ground
VCOA
12
VCO tank circuit A
VCOB
13
VCO tank circuit B
VCC(V)
14
supply voltage for VCO
Iout
15
I channel amplifier output
Iin
16
I channel amplifier input
handbook, halfpage
1
16 Iin
I
2
15 Iout
GND(D)
3
14 VCC(V)
RF A
4
13 VCOB
TDA8040T
Qin
MGE510
Fig.2 Pin configuration.
The VCO operates at twice the carrier frequency. Its output
signal is applied to a frequency divider (divide-by-2) to
produce the two LO signals which are 90 degrees out of
phase. The VCO is powered from the internal voltage
stabilizer to ensure good shift performance.
FUNCTIONAL DESCRIPTION
The QPSK modulated RF signal is applied at the input of a
high gain RF amplifier. The amplified signal is then mixed
in a pair of mixers with two LO signals, which are
90 degrees out of phase, to produce the in-phase (I) and
quadrature (Q) signals. These two signals are separately
buffered to drive the external low-pass filters used for the
baseband filtering. The I and Q signals are then amplified
by two matched amplifiers designed to avoid crosstalk
between channels.
1996 Oct 08
VCC(A)
4
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC(A)
supply voltage for I and Q amplifiers
−0.3
+6.0
V
VCC(D)
supply voltage for demodulator
−0.3
+6.0
V
VCC(V)
supply voltage for VCO
−0.3
+6.0
V
Vn(max)
maximum voltage on all pins
−0.3
VCC
V
Imax
maximum sink or source current
−
10
mA
tsc(max)
maximum short-circuit time on outputs
−
10
s
ZL(IQ)
AC load impedance for
I and Q channels
fi = 15 MHz
35
−
Ω
ZLA(IQ)
AC load impedance for
I and Q output amplifiers
fi = 15 MHz
300
−
Ω
VVCO(p-p)
voltage drive level for external oscillator
signal (peak-to-peak value)
−
0.6
V
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
Tamb = 70 °C
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
0
70
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1996 Oct 08
PARAMETER
thermal resistance from junction to ambient in free air
5
VALUE
UNIT
110
K/W
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
CHARACTERISTICS
VCC(A) = VCC(D) = VCC(V) = 5 V; fi(RF) = 70 MHz; fi(VCO) = 140 MHz; Vi(RF) = 67 dBµV; Tamb = 25 °C;
measured in application circuit of Fig.10; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VCC(A)
supply voltage for I and Q channel
amplifier
4.75
5.0
5.25
V
VCC(D)
supply voltage for demodulator
4.75
5.0
5.25
V
VCC(V)
supply voltage for VCO
4.75
5.0
5.25
V
ICC(A)
supply current for I and Q channel
amplifier
note 1
−
29
−
mA
ICC(D)
supply current for demodulator
note 1
−
16
−
mA
ICC(V)
supply current for VCO
note 1
−
34
−
mA
QPSK demodulator
fi(RF)min
minimum input IF frequency
−
−
10.7
MHz
fi(RF)max
maximum input IF frequency
150
−
−
MHz
Ri(RF)
resistive input impedance
−
50
−
Ω
Xi(RF)
reactive input impedance
−
5
−
Ω
Vi(RF)
operating input voltage
64
67
70
dBµV
Ro(IQ)
output resistance for I and Q channels
45
50
55
Ω
VolQ(p-p)
output voltage for I and Q channels
(peak-to-peak value)
note 2
−
85
−
mV
Gch(IQ)
I and Q channel gain
note 3
21
22.5
24
dB
Eφ(IQ)
phase error between I and Q channels
note 4
−
−
3
deg
EG(IQ)
gain error between I and Q channels
note 4
−
−
0.5
dB
EG(tilt)
gain tilt error between I and Q channels
note 5
−
−
0.8
dB
NF
double sideband noise figure
Zsource = 50 Ω;
note 6
−
17
20
dB
IM3
intermodulation distortion in the
I and Q channels
note 7
45
−
−
dB
1996 Oct 08
6
Philips Semiconductors
Objective specification
Quadrature demodulator
SYMBOL
TDA8040T
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage controlled oscillator (VCO)
fiVCO(min)
minimum input oscillator frequency
−
−
21.4
MHz
fiVCO(max)
maximum input oscillator frequency
300
−
−
MHz
∆f
frequency deviation
−
6
−
MHz
∆fdrift
frequency drift
note 8
−
−
100
kHz
∆fshift
frequency shift
∆VCC = 5%
−
−
100
kHz
CNRosc
oscillator carrier-to-noise ratio
at 10 kHz;
note 9
−
85
−
dBc/Hz
at 100 kHz;
note 9
−
105
−
dBc/Hz
Vosc(p-p)
required voltage drive level for external
oscillator injection (peak-to-peak value)
100
−
−
mV
Rsource(osc)
source resistance for external oscillator
generator
−
−
50
Ω
I and Q amplifiers
VilQ(p-p)
I and Q channel input voltage
(peak-to-peak value)
note 10
−
0.1
−
V
VolQ(p-p)
I and Q channel output voltage
(peak-to-peak value)
note 10
−
0.5
−
V
at 1 dB gain
compression;
note 10
1.0
−
−
V
IM3
intermodulation distortion in the
I and Q channels
note 11
40
−
−
dB
BIQ
bandwidth of I and Q amplifiers
at 0.5 dB
25
−
−
MHz
αct(IQ)
crosstalk between the I and Q channels
note 12
30
−
−
dB
VO(IQ)
DC output voltage level for the
I and Q amplifier
−
2.45
−
V
ZI(IQ)
input impedance of the I and Q channels
−
10
−
kΩ
ZO(IQ)
output impedance of the I and Q channels
−
50
−
Ω
Notes to the characteristics
1. Typical supply currents are defined for VCC = 5 V.
2. The I and Q channel output voltages are measured with the following conditions:
a) fi(RF) = 1⁄2fi(VCO) + 500 kHz (70.5 MHz)
b) the higher frequencies (140.5 MHz) are filtered out.
V IQ ( rms )
3. The I and Q channels gain is defined by G IQ = ------------------------.
V iRF ( rms )
The gains are measured with the conditions defined in note 2.
1996 Oct 08
7
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
4. The phase and gain error between the I and Q channel outputs is measured as follows:
a) the oscillator is tuned at fi(VCO) = 140 MHz
b) a sine wave signal fi(RF) = 1⁄2fi(VCO) + 500 kHz (70.5 MHz) is applied at the IF input
c) the higher frequencies (140.5 MHz) are filtered out.
Under these conditions, in each I and Q channel, a sine wave with a frequency of 500 kHz will be present.
These sine waves should be 90 degrees out of phase.
The phase error is defined as the phase quadrature imbalance between the I and Q channels.
The gain error is defined as the gain difference between the I and Q channels.
5. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency
band of 25 MHz around fi(RF). The specified tilt is the maximum tilt value found in one of the I or Q channels.
6. The specified noise figure is the maximum value obtained from I and Q channel noise measurement. The noise meter
is tuned to 10.7 MHz.
7. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the
I and Q channels. Intermodulation is measured with two sine wave signals at fi(RF) = 79 MHz and fi(RF) = 81 MHz with
an amplitude of 67 dBµV for each tone. The difference in level between the converted carriers (9 MHz and 11 MHz)
and the intermodulation products after frequency conversion (7 MHz and 13 MHz) is defined as IM3 (see Fig.3).
8. The temperature for the VCO frequency drift is defined for ∆Tamb = 25 °C. It is measured in the application circuit of
Fig.10 with the following component values for the tank circuit:
a) L1: 22 nH (TOKO NE545BNA5 - 100082)
b) C1: 15 pF NP0
c) C2: 33 pF N220 (220 ppm/°C)
d) C3 and C4: 1 nF
e) C5: 3.3 µF
f) D1 and D2: BB133
g) R1 and R2: 100 kΩ
h) R3: 1 kΩ.
9. The phase noise is measured at the oscillator frequency (140 MHz). Due to the frequency divider, the phase noise
at the input of the mixers is 6 dB better (111 dBc/Hz at 100 kHz).
10. Output amplifiers are measured separately with an external DC bias applied at pins 9 and 16. The gain is measured
for an output signal of 500 mV (p-p) at fi = 500 kHz.
11. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the
I and Q output amplifier. Intermodulation is measured with two sine wave signals at fi = 9 MHz and fi = 11 MHz at an
output level of 500 mV (p-p) for each tone.
12. The crosstalk between the I and Q amplifiers is defined as the ratio between the wanted output signal and the
disturbing signal from the other channel. To measure the crosstalk of the I and Q amplifiers, a sine wave
15 MHz, 0.1 V (p-p) is applied at the I input and a sine wave 15.5 MHz, 0.1 V (p-p) is applied at the Q input. For each
output, the difference in level is measured between the 15 MHz and the 15.5 MHz component. This difference is the
value of the crosstalk between the I and Q amplifiers.
1996 Oct 08
8
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
MGE512
handbook, halfpage
IM3
5
7
9
11
13
15
fi (MHz)
Fig.3 IM3 definition.
handbook, halfpage
R2
C3
13
D2
R3
C1
C2
Vvaricap
L1
D1
C5
12
C4
R1
MGE513
Fig.4 Tank circuit.
1996 Oct 08
9
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
INPUT PIN CONFIGURATION
handbook, halfpage
V
1
handbook, halfpageV
CC(A)
1
CC(A)
9,16
10,15
GND(A)
8
MGE514
GND(A)
Fig.5 Input circuitry VCC(A) to GND(A).
8
MBE259
Fig.6 Input circuitry VCC(A) to GND(A).
handbook, halfpage
VCC(A)
handbook, halfpage
1
13
12
2,7
GND(V)
11
GND(A)
MGE515
Fig.7 Input circuitry VCC(V) to GND(V).
8
MBE261
Fig.8 Input circuitry VCC(A) to GND(A).
14
handbook, halfpage
VCC(V)
4
GND(V)
5
3
MBE262
Fig.9 Input circuitry VCC(V) to GND(V).
1996 Oct 08
10
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
APPLICATION INFORMATION
handbook, full pagewidth
+5 V
LOW-PASS
FILTER
VCC(A) 1
16 Iin
AMP
I 2
AMP
VOLTAGE
REFERENCE
GND(D) 3
RFin
÷2
AMP
14 VCC(V)
VCO
12 VCOA
90
+5 V
VCC(D) 6
Q 7
GND(A) 8
11 GND(V)
AMP
AMP
10 Qout
9 Qin
TDA8040T
LOW-PASS
FILTER
MGE516
Fig.10 Application circuit.
1996 Oct 08
+5 V
13 VCOB
0
RF A 4
RF B 5
15 Iout
11
Vvaricap
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
HE
v M A
Z
16
9
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
8
e
0
detail X
w M
bp
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.069
0.010 0.057
0.004 0.049
0.01
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.050
0.039
0.016
0.028
0.020
0.01
0.01
0.004
0.028
0.012
inches
0.244
0.041
0.228
θ
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT109-1
076E07S
MS-012AC
1996 Oct 08
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-23
97-05-22
12
o
8
0o
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
SOLDERING
Wave soldering
Introduction
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1996 Oct 08
13
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 08
14
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
NOTES
1996 Oct 08
15
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106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 247 9145, Fax. +7 095 247 9144
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
537021/50/02/pp16
Date of release: 1996 Oct 08
Document order number:
9397 750 01345