DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 FEATURES QUICK REFERENCE DATA • High current SYMBOL • Two current gain selections VCEO collector-emitter voltage − 20 V IC collector current (DC) − 1 A APPLICATIONS ICM peak collector current − 2 A • Linear voltage regulators hFE DC current gain • 1.2 W total power dissipation. PARAMETER MIN. MAX. UNIT • Low side switch BC868 85 375 − • Supply line switch for negative voltages BC868-25 160 375 − • MOSFET driver DESCRIPTION • Audio (pre-) amplifier. NPN medium power transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PHILIPS EIAJ BC868 SOT89 SC-62 CAC BC868-25 SOT89 SC-62 CDC SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN BC868 2 DESCRIPTION 1 emitter 2 collector 3 base 3 3 2 1 1 sym042 ORDERING INFORMATION PACKAGE TYPE NUMBER BC868 BC868-25 2004 Nov 08 NAME DESCRIPTION VERSION SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 2 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 200 mA Ptot total power dissipation notes 1 and 2 − 0.5 W notes 1 and 3 − 0.85 W notes 1 and 4 Tamb ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Refer to SOT89 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. 3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. MLE323 1.6 handbook, halfpage Ptot (W) 1.2 (1) (2) 0.8 (3) 0.4 0 -65 -5 55 115 175 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) Standard footprint. Fig.1 Power derating curves. 2004 Nov 08 3 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS UNIT notes 1 and 2 250 K/W notes 1 and 3 147 K/W notes 1 and 4 104 K/W 20 K/W Tamb ≤ 25 °C thermal resistance from junction to ambient Rth(j-s) VALUE thermal resistance from junction to solder point Tamb ≤ 25 °C Notes 1. Refer to SOT89 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. 3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. MLE324 103 handbook, full pagewidth Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) δ= P 1 (10) tp T t tp T 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ =0.01. (10) δ = 0. Fig.2 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 4 tp (s) 103 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 32 mm handbook, halfpage 2 mm 2.8 mm 10 mm 3.5 mm 40 mm 1.8 mm 10 mm 1.1 mm 2.5 mm 1 mm 0.5 mm 0.7 mm 0.8 mm 5 mm 3.7 mm 3.96 mm MLE321 1.6 mm MLE322 Fig.3 SOT89 standard mounting conditions for reflow soldering. Fig.4 Printed-circuit board for SOT89; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MAX. UNIT − − 100 nA VCB = 25 V; IE = 0 A; Tj = 25 °C − − 10 μA − − 100 nA VCE = 10 V; IC = 5 mA 50 − − VCE = 1 V; IC = 500 mA 85 − 375 VCE = 1 V; IC = 1 A 60 − − 160 − 375 emitter-base cut-off current VEB = 5 V; IC = 0 A hFE DC current gain BC868 DC current gain TYP. VCB = 25 V; IE = 0 A IEBO hFE MIN. BC868-25 VCE = 1 V; IC = 500 mA VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA − − 500 mV VBE base-emitter voltage VCE = 10 V; IC = 5 mA − − 700 mV VCE = 1 V; IC = 1 A − − 1 V Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz − 22 − pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 40 170 − MHz 2004 Nov 08 5 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 MLE331 2.4 MLE332 1 halfpage handbook, handbook, halfpage (1) IC (A) (2) VBE (3) (V) (4) 1.6 (5) (6) (7) (8) 0.8 (9) (10) 10−1 10−4 0 0 1 2 3 4 5 10−3 10−2 10−1 (1) IB = 10 mA. (2) IB = 9 mA. (3) IB = 8 mA. (4) IB = 7 mA. Fig.5 (5) IB = 6 mA. (6) IB = 5 mA. (7) IB = 4 mA. (8) IB = 3 mA. 10 1 IC (A) VCE (V) (9) IB = 2 mA. (10) IB = 1 mA. VCE = 1 V. Collector current as a function of collector-emitter voltage; typical values. Fig.6 MLE333 103 halfpage handbook, Base-emitter voltage as function of collector current; typical values. MLE334 1 handbook, halfpage VCEsat hFE (V) 10−1 10−2 102 10−4 10−3 10−2 10−1 1 10−3 10−4 10 IC (A) 10−2 10−1 1 10 IC (A) VCE = 1 V. IC/IB = 10. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. 2004 Nov 08 10−3 6 Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-243 SC-62 7 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 08 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/07/pp9 Date of release: 2004 Nov 08 Document order number: 9397 750 13859