DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Nov 20 2004 Nov 05 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 FEATURES QUICK REFERENCE DATA • High current SYMBOL • Two current gain selections. VCEO collector-emitter voltage − −20 V APPLICATIONS IC collector current (DC) − −1 A • Linear voltage regulators ICM peak collector current − −2 A • High side switches hFE DC current gain PARAMETER MIN. MAX. UNIT • Supply line switches BC369 85 375 • MOSFET drivers BC369-16 100 250 • Audio pre-amplifiers. BC369-25 160 375 DESCRIPTION PNP medium power transistor (see “Simplified outline, symbol and pinning”) for package details. PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PHILIPS EIAJ BC369 SOT54 SC-43A C369 BC369-16 SOT54 SC-43A C36916 BC369-25 SOT54 SC-43A C36925 SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN BC369 handbook, halfpage1 2 2 3 1 MAM285 DESCRIPTION 1 base 2 collector 3 emitter 3 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC369 SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads BC369-16 BC369-25 2004 Nov 05 2 VERSION SOT54 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −32 V VCEO collector-emitter voltage open base − −20 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current − −200 mA Ptot total power dissipation − 830 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Tamb ≤ 25 °C; notes 1 and 2 Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54. MLE301 1 handbook, halfpage Ptot (W) 0.8 0.6 0.4 0.2 0 −65 Fig.1 −5 55 175 115 Tamb (°C) Power derating curve for standard PCB footprint. 2004 Nov 05 3 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS Tamb ≤ 25 °C; notes 1 and 2 thermal resistance from junction to ambient VALUE UNIT 150 K/W Notes 1. Refer to SOT54 (SC-43A) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54. MLE302 103 handbook, full pagewidth Rth(j-a) (K/W) (1) (2) (3) (4) 102 (5) (6) 10 (7) (8) (9) δ= P (10) 1 tp T t tp T 10−1 10−5 10−4 10−3 10−2 10−1 1 (1) δ = 1.0. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01. (2) δ = 0.75. (4) δ = 0.03. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0.0. Fig.2 10 102 tp (s) 103 Transient thermal resistance from junction to ambient as a function of pulse time for standard PCB footprint. 2004 Nov 05 4 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current IEBO emitter-base cut-off current hFE DC current gain BC369 CONDITIONS MIN. TYP. MAX. UNIT VCB = −25 V; IE = 0 A − − −100 nA VCB = −25 V; IE = 0 A; Tj = 150 °C − − −10 μA VEB = −5 V; IC = 0 A − − −100 nA VCE = −10 V; IC = −5 mA 50 − − VCE = −1 V; IC = −500 mA 85 − 375 VCE = −1 V; IC = −1 A 60 − − BC369-16 VCE = −1 V; IC = −500 mA 100 − 250 BC369-25 VCE = −1 V; IC = −500 mA 160 − 375 VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA VBE base-emitter voltage − − −500 mV VCE = −10 V; IC = −5 mA − − −700 mV VCE = −1 V; IC = −1 A − − −1 V − 28 − pF 140 − MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz fT transition frequency VCE = −5 V; IC = −50 mA; f = 100 MHz 40 2004 Nov 05 5 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 MLE297 −2.4 C (A) −2.0 MLE294 −1000 VBE (mV) handbook, halfpage I handbook, halfpage (1) (2) −800 (3) −1.6 (4) −600 (5) (6) −1.2 (7) −400 (8) −0.8 (9) −0.4 0 −200 (10) −1 0 −2 −3 −4 0 −10−1 −5 VCE (V) −1 BC369-16. BC369-16. Tamb = 25 °C. VCE = −1 V. (1) IB = −18 mA. (2) IB = −16.2 mA. (3) IB = −14.4 mA. (4) IB = −12.6 mA. (5) IB = −10.8 mA. Fig.3 −102 −103 −104 IC (mA) (6) IB = −9.0 mA. (7) IB = −7.2 mA. (8) IB = −5.4 mA. (9) IB = −3.6 mA. (10) IB = −1.8 mA. Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 05 −10 Fig.4 6 Base-emitter voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 MLE299 103 halfpage handbook, MLE300 −103 handbook, halfpage VCEsat hFE (mV) −102 −10 102 −10−1 −1 −10 −102 −1 −10−1 −103 −104 IC (mA) BC369-16. BC369-16. VCE = −1 V. IC/IB = 10. Fig.5 Fig.6 DC current gain as a function of collector current; typical values. 2004 Nov 05 7 −1 −10 −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 MLE293 −2.4 C (A) −2.0 (1) −1000 VBE (mV) (2) −800 handbook, I halfpage MLE294 handbook, halfpage (3) (4) −1.6 (5) −600 (6) −1.2 (7) −400 (8) −0.8 (9) −0.4 −200 (10) 0 −1 0 −2 −3 −4 0 −10−1 −5 VCE (V) BC369-25. IB = −12 mA. IB = −10.8 mA. IB = −9.6 mA. IB = −8.4 mA. IB = −7.2 mA. Fig.7 −102 −103 −104 IC (mA) VCE = −1 V. (6) IB = −6.0 mA. (7) IB = −4.8 mA. (8) IB = −3.6 mA. (9) IB = −2.4 mA. (10) IB = −1.2 mA. Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 05 −10 BC369-25. Tamb = 25 °C. (1) (2) (3) (4) (5) −1 Fig.8 8 Base-emitter voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 MLE295 103 halfpage handbook, MLE296 −103 handbook, halfpage VCEsat hFE (mV) −102 −10 102 −10−1 −1 −10 −102 −1 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) BC369-25. BC369-25. VCE = −1 V. IC/IB = 10. Fig.9 Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. DC current gain as a function of collector current; typical values. 2004 Nov 05 9 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Nov 05 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 10 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC369 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 05 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp12 Date of release: 2004 Nov 05 Document order number: 9397 750 13565