PHILIPS TDA8569Q

INTEGRATED CIRCUITS
DATA SHEET
TDA8569Q
4 × 25 W BTL quad car radio power
amplifier
Preliminary specification
File under Integrated Circuits, IC01
1997 Mar 27
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
FEATURES
• Electrostatic discharge protection
• Capable of driving 2 Ω loads
• No switch-on/switch-off plop
• Requires very few external components
• Flexible leads
• High output power
• Low thermal resistance
• Low output offset voltage
• Pin compatible with the TDA8567Q.
• Fixed gain
GENERAL DESCRIPTION
• Diagnostic facility (distortion, short-circuit and
temperature pre-warning)
The TDA8569Q is an integrated class-B output amplifier in
a 23-lead Single-In-Line (SIL) plastic power package.
It contains four amplifiers in BTL configuration, each with a
gain of 26 dB. The output power is 4 × 25 W in a 4 Ω load.
• Good ripple rejection
• Mode select switch (operating, mute and standby)
• Load dump protection
• Short-circuit safe to ground and to VP and across the
load
APPLICATIONS
• Low power dissipation in any short-circuit condition
• The device is primarily developed for car radio
applications.
• Thermally protected
• Reverse polarity safe
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
operating supply voltage
6
14.4
18
V
IORM
repetitive peak output current
−
−
7.5
A
Iq(tot)
total quiescent current
−
230
−
mA
Istb
standby current
−
0.2
100
µA
Isw
switch-on current
−
−
80
µA
Zi
input impedance
25
30
−
kΩ
Po
output power
THD = 10%
−
25
−
W
SVRR
supply voltage ripple rejection
Rs = 0 Ω
−
60
−
dB
αcs
channel separation
Rs = 10 kΩ
−
50
−
dB
25
26
27
dB
−
−
120
µV
−
−
150
mV
Gv
closed loop voltage gain
Vn(o)
noise output voltage
∆VO
DC output offset voltage
Rs = 0 Ω
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8569Q
DBS23P
plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
1997 Mar 27
2
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
BLOCK DIAGRAM
handbook, full pagewidth
IN1
MODE
VP1
VP2
15
1
8
10
VP3
VP4
16
23
+
2
−
OUT1+
30 kΩ
+
4
−
IN2
OUT1−
Vref
11
+
7
−
OUT2+
30 kΩ
+
SGND
12
TDA8569Q
IN3
5
−
13
DIAGNOSTIC
+
9
17
−
OUT2−
VDIAG
OUT3+
30 kΩ
+
19
−
IN4
OUT3−
Vref
14
+
22
−
OUT4+
30 kΩ
+
20
−
3
PGND1
6
PGND2
18
21
PGND3
PGND4
Fig.1 Block diagram.
1997 Mar 27
3
OUT4−
MBK010
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
PINNING
SYMBOL
PIN
DESCRIPTION
VP1
1
supply voltage 1
OUT1+
2
output 1+
PGND1
3
power ground 1
OUT1−
4
output 1−
OUT2−
5
output 2−
PGND2
6
OUT2+
handbook, halfpage
VP1
1
OUT1+
2
PGND1
3
OUT1−
4
power ground 2
OUT2−
5
7
output 2+
PGND2
6
VP2
8
supply voltage 2
OUT2+
7
VDIAG
9
diagnostic output
VP2
8
IN1
10
input 1
11
input 2
VDIAG
9
IN2
SGND
12
signal ground
IN3
13
input 3
IN4
14
input 4
MODE
15
mode select switch input
IN3 13
VP3
16
supply voltage 3
IN4 14
OUT3+
17
output 3+
PGND3
18
power ground 3
OUT3−
19
output 3−
OUT4−
20
output 4−
PGND4
21
power ground 4
PGND3 18
OUT4+
22
output 4+
OUT3− 19
VP4
23
supply voltage 4
OUT4− 20
IN1 10
IN2 11
SGND 12
TDA8569Q
MODE 15
VP3 16
OUT3+ 17
PGND4 21
OUT4+ 22
VP4 23
MBK009
Fig.2 Pin configuration.
1997 Mar 27
4
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
FUNCTIONAL DESCRIPTION
SHORT-CIRCUIT DIAGNOSTIC
The TDA8569Q contains four identical amplifiers which
can be used for bridge applications. The gain of each
amplifier is fixed at 26 dB.
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
10 ms after removal of the short-circuit. During this
short-circuit condition, pin 9 is continuously LOW.
Mode select switch (pin 15)
• Standby: low supply current (<100 µA)
When a short-circuit occurs across the load of one or more
channels, the output stages are switched off during
approximately 10 ms. After that time it is checked during
approximately 50 µs to determine whether the short-circuit
is still present.
Due to this duty cycle of 50 µs/10 ms the average current
consumption during this short-circuit condition is very low.
• Mute: input signal suppressed
• Operating: normal on condition.
Since this pin has a low input current (<80 µA), a low cost
supply switch can be applied.
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥150 ms (charging of the input
capacitors at pins 10, 11, 13 and 14).
During this short-circuit condition, pin 9 is LOW for 10 ms
and HIGH for 50 µs (see Fig.5). The protection circuits of
all channels are coupled. This means that if a short-circuit
condition occurs in one of the channels, all channels are
switched off. Consequently, the power dissipation in any
short-circuit condition is very low.
This can be realized by:
• Microprocessor control
• External timing circuit (see Fig.3).
Diagnostic output (pin 9)
TEMPERATURE PRE-WARNING
DYNAMIC DISTORTION DETECTOR (DDD)
When the virtual junction temperature Tvj reaches 145 °C,
pin 9 goes LOW.
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 9
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and so limit the distortion. The output level of pin 9
is independent of the number of channels that are clipping
(see Fig.4).
handbook, halfpage
OPEN COLLECTOR OUTPUTS
The diagnostic pin has an open collector output, so more
devices can be tied together. An external pull-up resistor is
needed.
VP
handbook, halfpage
Vo
MGG155
0
10 kΩ
47 µF
10 kΩ
mode
select
switch
V9
VP
100 kΩ
0
MGA708
Fig.3 Mode select switch circuitry.
1997 Mar 27
t
Fig.4 Distortion detector waveform.
5
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
handbook, full pagewidthshort
MGG156
circuit
current
t
short-circuit over the load
V9
10 ms
VP
t
50 µs
Fig.5 Short-circuit waveform.
1997 Mar 27
6
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
CONDITIONS
supply voltage
MIN.
MAX.
UNIT
operating
−
18
V
non-operating
−
30
V
load dump protection;
during 50 ms; tr ≥ 2.5 ms
−
45
V
Vsc(safe)
short-circuit safe voltage
−
18
V
Vrp
reverse polarity voltage
−
6
V
IOSM
non-repetitive peak output current
−
10
A
IORM
repetitive peak output current
−
7.5
A
Ptot
total power dissipation
−
60
W
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Tvj
virtual junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
40
K/W
Rth j-c
thermal resistance from junction to case (see Fig.6)
1
K/W
virtual junction
handbook, halfpage
OUT1
3.2 K/W
OUT2
OUT3
3.2 K/W
3.2 K/W
OUT4
3.2 K/W
0.2 K/W
case
MGG157
Fig.6 Equivalent thermal resistance network.
1997 Mar 27
7
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
note 1
6
14.4
18
V
Iq(tot)
total quiescent current
RL = ∞
−
230
360
mA
Operating condition
V15
mode select switch level
8.5
−
VP
V
I15
mode select switch current
V15 = 14.4 V
−
30
80
µA
VO
output voltage
note 2
−
7.0
−
V
∆VO
output offset voltage
−
−
150
mV
3.3
−
6.4
V
−
7.0
−
V
−
−
150
mV
Mute condition
V15
mode select switch level
VO
output voltage
∆VO
output offset voltage
note 2
Standby condition
V15
mode select switch level
0
−
2
V
Istb
standby current
−
0.2
100
µA
Diagnostic
V9
diagnostic output voltage
during any fault condition
−
−
0.6
V
Tvj
temperature pre-warning
V9 = 0.6 V
−
145
−
°C
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage ≤ 1⁄2VP.
1997 Mar 27
8
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
Po
THD
PARAMETER
output power
total harmonic distortion
CONDITIONS
MIN.
TYP.
MAX.
UNIT
THD = 0.5%
16
19
−
W
THD = 10%
21
25
−
W
THD = 30%
28
35
−
W
VP = 13.2 V; THD = 0.5%
−
15
−
W
VP = 13.2 V; THD = 10%
−
21
−
W
Po = 1 W
−
0.05
−
%
V9 ≤ 0.6 V; note 8
−
10
−
%
Bp
power bandwidth
THD = 0.5%; Po = −1 dB
with respect to 16 W
−
20 to
20000
−
Hz
fro(l)
low frequency roll-off
at −1 dB; note 1
−
25
−
Hz
fro(h)
high frequency roll-off
at −1 dB
20
−
−
kHz
Gv
closed loop voltage gain
25
26
27
dB
SVRR
supply voltage ripple rejection on; note 2
50
−
−
dB
mute; note 2
50
−
−
dB
standby; note 2
80
−
−
dB
25
30
38
kΩ
on; note 3
−
85
120
µV
on; note 4
−
100
−
µV
mute; note 5
−
60
−
µV
note 6
45
−
−
dB
−
−
1
dB
Zi
input impedance
Vn(o)
noise output voltage
αcs
channel separation
∆Gv
channel unbalance
Vo
output signal in mute
note 7
−
−
2
mV
Po
output power
THD = 0.5%; RL = 2 Ω
−
30
−
W
THD = 10%; RL = 2 Ω
−
40
−
W
THD = 30%; RL = 2 Ω
−
55
−
W
Po = 1 W; RL = 2 Ω
−
0.1
−
%
THD
total harmonic distortion
Notes
1. Frequency response externally fixed.
2. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω.
3. B = 20 Hz to 20 kHz; Rs = 0 Ω.
4. B = 20 Hz to 20 kHz; Rs = 10 kΩ.
5. B = 20 Hz to 20 kHz; independent of Rs.
6. PO = 16 W; Rs = 10 kΩ.
7. Vi = Vi(max) = 1 V (RMS).
8. Dynamic Distortion Detector (DDD) active, pin 9 is set to logic 0.
1997 Mar 27
9
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
TEST AND APPLICATION INFORMATION
VP
handbook, full pagewidth
+14.4 V
MODE
15
IN1
input 1
VP1
VP2
VP3
VP4
1
8
16
23
10
+
470 nF
100 nF
2
2200 µF
OUT1+
−
RL = 4 Ω
30 kΩ
+
4
OUT1−
7
OUT2+
−
IN2
input 2
Vref
11
+
470 nF
−
RL = 4 Ω
30 kΩ
+
SGND
12
input 3
OUT2−
9
VDIAG
17
OUT3+
10 kΩ
TDA8569Q
IN3
5
−
13
DIAGNOSTIC
+
470 nF
+VP
diagnostic
output
−
RL = 4 Ω
30 kΩ
+
19
OUT3−
22
OUT4+
−
IN4
input 4
Vref
14
+
470 nF
−
RL = 4 Ω
30 kΩ
+
20
OUT4−
−
3
6
18
21
PGND1
PGND2
PGND3
PGND4
power ground (substrate)
MBK011
Special care must be taken in the PCB-layout to separate pin 9 from the pins 10, 11 13 and 14 to minimize the crosstalk between the clip output
and the inputs.
To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥150 ms (charging the input capacitors at pin
10, 11, 13 and 14).
Fig.7 Application circuit diagram.
1997 Mar 27
10
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
Test information
Figures 8 to 13 have the following conditions: VP = 14.4 V; RL = 4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise
specified.
MGD922
60
MGD921
300
handbook, halfpage
handbook, halfpage
Po
(W)
IP
(mA)
40
200
(1)
(2)
20
(3)
100
0
0
8
0
4
8
12
16
12
10
14
16
20
VP (V)
VP (V)
18
(1) EIAJ.
(2) 10%.
(3) 0.5%.
Fig.8 IP as a function of VP.
Fig.9 Po as a function of VP.
MBK008
10
MGD924
10
handbook, halfpage
handbook, halfpage
THD+N
(%)
THD+N
(%)
1
1
f = 10 kHz
10−1
10−1
1 kHz
10 W
100 Hz
10−2
10−2
10−1
1
1W
10
Po (W)
10−2
10
102
Fig.10 THD + N as a function of Po.
1997 Mar 27
102
103
104
f (Hz)
105
Fig.11 THD + N as a function of frequency.
11
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
MGD925
−30
MGD926
−30
handbook, halfpage
handbook, halfpage
SVRR
(dB)
αcs
(dB)
−50
−50
−70
−70
(1)
(2)
−90
10
102
103
104
f (Hz)
−90
10
105
102
103
104
f (Hz)
105
(1) channel 1 ⇔ channel 2, channel 3 ⇔ channel 4.
(2) channels 1 and 2 ⇔ channels 3 and 4.
Fig.13 Channel separation as a function of
frequency.
Fig.12 SVRR as a function of frequency.
MLB667
10 2
handbook, full pagewidth
THD
(%)
10
1
(1)
10 1
(2)
(3)
10 2
10 2
10 1
1
(1) f = 10 kHz.
(2) f = 1 Hz.
(3) f = 100 Hz.
Fig.14 THD + N as a function of Po; RL = 2 Ω.
1997 Mar 27
12
10
Po (W)
10 2
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
MGA905
70
o
(W)
60
handbook,
P full pagewidth
50
(1)
40
(2)
30
(3)
20
10
0
8
10
12
14
16
(1) THD = 30%.
(2) THD = 10%.
(3) THD = 0.5%.
Fig.15 Output power as a function of supply voltage; RL = 2 Ω.
1997 Mar 27
13
VP (V)
18
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
PCB layout
111.76
handbook, full pagewidth
78.74
Pgnd
100 nF
2200 µF
−
VP
−
−
out 4
out1
+
+
470 nF
470 nF
−
−
out2
out 3
+
10 kΩ
diag
in
1
in
sgnd
2
3
mode
+
4
MGK079
Dimensions in mm.
Fig.16 PCB layout (component side).
1997 Mar 27
14
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
111.76
handbook, full pagewidth
78.74
Pgnd
100nF
2200 µF
−
VP
−
−
out 4
out1
+
+
470 nF
470 nF
−
−
out2
out 3
+
mode
in
4
in
sgnd
3
2
diag
+
10 kΩ
1
MGK080
Dimensions in mm.
Fig.17 PCB layout (soldering side).
1997 Mar 27
15
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
PACKAGE OUTLINE
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
β
A5
A4
E2
B
j
E
E1
L2
L3
L1
1
23
L
e1
Z
bp
e
c
Q
w M
e2
m
0
5
v M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A 2
mm
A4
A5
bp
c
D (1)
d
D h E (1)
e
e1
e2
12.2
4.6 1.15 1.65 0.75 0.55 30.4 28.0
12
2.54 1.27 5.08
11.8
4.3 0.85 1.35 0.60 0.35 29.9 27.5
Eh
E1
E2
j
L
L1
L2
L3
m
Q
v
w
x
β
Z (1)
6 10.15 6.2 1.85 3.6 14.0 10.7 2.4 4.3 2.1 0.6 0.25 0.03 45° 1.43
9.85 5.8 1.65 2.8 13.0 9.9 1.6
0.78
1.8
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-10-11
SOT411-1
1997 Mar 27
EUROPEAN
PROJECTION
16
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 27
17
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
NOTES
1997 Mar 27
18
Philips Semiconductors
Preliminary specification
4 × 25 W BTL quad car radio power
amplifier
TDA8569Q
NOTES
1997 Mar 27
19
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Tel. +45 32 88 2636, Fax. +45 31 57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/01/pp20
Date of release: 1997 Mar 27
Document order number:
9397 750 01939