PHILIPS TDA8580J

INTEGRATED CIRCUITS
DATA SHEET
TDA8580J
Multi-purpose power amplifier
Preliminary specification
Supersedes data of 1998 Feb 25
File under Integrated Circuits, IC01
2000 Apr 18
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
FEATURES
Protection
General
• Low distortion
• Short-circuit proof to ground, positive supply voltage and
across load; the supply voltage ranges where the
different short circuit conditions are guaranteed are
given in Chapter “Limiting values”
• Few external components, fixed gain
• ESD protected on all pins
• High output power
• Thermal protection against temperatures exceeding
150 °C.
• Supply voltage range from 8 to 24 V
• Can be used as a stereo amplifier in Bridge-Tied Load
(BTL) or quad Single-Ended (SE) amplifiers
• Single-ended mode without loudspeaker capacitor
GENERAL DESCRIPTION
• Mute and standby mode with one- or two-pin operation
The TDA8580J is a stereo Bridge-Tied Load (BTL) or a
quad Single-Ended (SE) amplifier that operates over a
wide supply voltage range from 8 to 24 V. This makes it
suitable for applications such as television, home-sound
systems and active speakers.
• Diagnostic information for Dynamic Distortion Detector
(DDD), high temperature (145 °C) and short-circuit
• No switch on/off plops when switching between standby
and mute or mute and on; an external RC-network is
prescribed to ensure plop-free operation
Because of an internal voltage buffer, this device can be
used without a capacitor connected in series with the load
(SE application). A combined BTL and 2 × SE application
can also be configured (one chip stereo and subwoofer
application).
• Low offset variation at outputs between mute and on
• Fast mute on supply voltage drops.
ORDERING INFORMATION
TYPE
NUMBER
TDA8580J
2000 Apr 18
PACKAGE
NAME
DESCRIPTION
VERSION
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
2
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
operating supply voltage
8.0
14.4
24
V
Iq(tot)
total quiescent current
VP = 14.4 V
−
140
170
mA
Istb
standby supply current
VP = 14.4 V
−
1
50
µA
31
32
33
dB
14
15
−
W
Bridge-tied load application
Gv
voltage gain
Po
output power
THD
total harmonic distortion
Voffset(DC)
DC output offset voltage
THD = 0.5%; VP = 14.4 V; RL = 4 Ω
THD = 0.5%; VP = 24 V; RL = 8 Ω
21
23
−
W
fi = 1 kHz; Po = 1 W; VP = 14.4 V;
RL = 4 Ω
−
0.05
0.1
%
fi = 1 kHz; Po = 10 W; VP = 24 V;
RL = 8 Ω
−
0.02
0.05
%
VP = 14.4 V; mute condition; RL = 4 Ω
−
10
20
mV
VP = 14.4 V; on condition
−
0
140
mV
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V
−
100
150
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V; on or mute
condition; Rs = 0 Ω
50
60
−
dB
25
26
27
dB
THD = 0.5%; VP = 14.4 V; RL = 4 Ω
3.8
4.0
−
W
THD = 0.5%; VP = 24 V; RL = 4 Ω
10.5
11.5
−
W
Single-ended application
Gv
voltage gain
Po
output power
Voffset(DC)
DC output offset voltage
VP = 14.4 V; mute condition; RL = 4 Ω
−
10
20
mV
VP = 14.4 V; on condition
−
0
100
mV
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V
−
80
120
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V; on or mute
condition; Rs = 0 Ω
40
45
−
dB
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
BLOCK DIAGRAM
VP1
VP2
3
15
handbook, full pagewidth
IN1
7
60
kΩ
TDA8580J
IN2
45 kΩ
−
−
V/I
+
+
8
60
kΩ
+
+
−
V/I
−
9
45
kΩ
60
kΩ
10
STANDBY
11
45 kΩ
−
−
V/I
+
+
OA
+
+
−
−
V/I
OA
14
17
OUT3−
OUT4+
45 kΩ
13
5
DIAGNOSTIC
INTERFACE
2
6
16
MGE010
PGND1
Fig.1 Block diagram.
2000 Apr 18
BUFFER
BUFFER
12
60
kΩ
MUTE
OUT2−
45
kΩ
BUFFER
IN4
4
OUT1+
45 kΩ
30 kΩ
IN5
OA
1
Vpx
Vpx
IN3
OA
4
PGND2
DIAG
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
PINNING
SYMBOL
PIN
DESCRIPTION
OUT1+
1
non-inverting output 1
PGND1
2
power ground 1
VP1
3
supply voltage 1
OUT2−
4
inverting output 2
STANDBY
5
standby/mute/on selection input
DIAG
6
diagnostic output
IN1
7
input 1
IN2
8
input 2
BUFFER
9
single-ended buffer output
IN3
10
input 3
IN4
11
input 4
IN5
12
input 5; signal ground capacitor
connection
MUTE
13
mute/on selection input
OUT3−
14
inverting output 3
VP2
15
supply voltage 2
PGND2
16
power ground 2
OUT4+
17
non-inverting output 4
handbook, halfpage
OUT1+
1
PGND1
2
VP1
3
OUT2−
4
STANDBY
5
DIAG
6
IN1
7
IN2
8
BUFFER
9
IN3
10
IN4
11
IN5
12
MUTE
13
OUT3−
14
VP2
15
PGND2
16
OUT4+
17
TDA8580J
MGE009
Fig.2 Pin configuration.
2000 Apr 18
5
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
• Low noise levels, which are independent of the supply
voltage.
FUNCTIONAL DESCRIPTION
The TDA8580J is a multi-purpose power amplifier with four
amplifiers which can be connected in the following
configurations with high output power and low distortion (at
minimum quiescent current):
Protections are included to avoid the IC being damaged at:
• Over temperature: Tj > 150 °C
• Short-circuit of the output pin(s) to ground or supply rail;
when short-circuited, the power dissipation is limited
• Dual bridge-tied load amplifiers
• Quad single-ended amplifiers
• ESD protection (Human Body Model 3000 V, Machine
Model 300 V)
• Dual single-ended amplifiers and one bridge-tied load
amplifier.
• Energy handling. A DC voltage of 6 V can be connected
to the output of any amplifier while the supply pins are
short-circuited to ground.
The amplifier can be switched in on, mute and off
(standby) by the MUTE and STANDBY pins (for interfacing
directly with a microcontroller). One-pin operation is also
possible by applying a voltage greater than 8 V to the
STANDBY pin to switch the amplifier in on mode.
Diagnostics are available for the following conditions
(see Figs 3, 4 and 5):
• Chip temperature above 145 °C
Special attention is given to the dynamic behaviour as
follows:
• Distortion over 2% due to clipping
• Short-circuit protection active.
• Slow offset change between mute and on (controlled by
MUTE and STANDBY pins)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
operating
−
24
V
no signal condition
−
28
V
−
18
V
non-repetitive peak output current
−
6
A
IORM
repetitive peak output current
−
4.5
A
VP(scol)
supply voltage with short-circuit across load
−
28
V
VP(scg)
supply voltage with short-circuit from output
to ground
−
26
V
VP(scs)
supply voltage with short-circuit from output
to supply
−
16
V
VP(rp)
reverse polarity
−
6
V
Ptot
total power dissipation
−
75
W
Tj
junction temperature
−
150
°C
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
VP
supply voltage
VDIAG
voltage on pin DIAG
IOSM
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-c)
thermal resistance from junction to case
2000 Apr 18
CONDITIONS
in free air
6
VALUE
UNIT
40
K/W
1.5
K/W
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; fi = 1 kHz; RL = ∞; measured in test circuit of Fig.28; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
24
V
Supplies
VP
operating supply voltage
8.0
14.4
Iq(tot)
total quiescent current
−
140
170
mA
Istb
standby current
−
1
50
µA
VO
DC output voltage
−
7.0
−
V
VP(mute)
low supply voltage mute
6.0
7.0
8.0
V
VI
DC input voltage
−
4.0
−
V
0
−
0.8
V
Control pins
STANDBY PIN (see Table 1)
V5(stb)
voltage at STANDBY pin for standby
condition
Vhys(5)(stb)
hysteresis voltage at STANDBY pin
for standby condition
note 1
−
0.2
−
V
V5(mute)
voltage at STANDBY pin for mute
condition
V13 < 0.8 V
2.0
−
5.3
V
V5(on)
voltage at STANDBY pin for on
condition
VP > 9 V; note 2
8.0
−
18
V
V5 = 5 V
0
−
0.8
V
2.5
−
5.3
V
Isink = 1 mA
−
0.2
0.8
V
MUTE PIN (see Table 1)
V13(mute)
voltage at MUTE pin for mute
condition
V13(on)
voltage at MUTE pin for on condition V5 = 5 V
Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5
VOL
LOW-level output voltage
ILI
leakage current
VDIAG = 14.4 V
−
−
1
µA
CD
clip detector
VDIAG < 0.8 V
1
2
4
%
Tj(diag)
junction temperature for high
temperature warning
VDIAG < 0.8 V
−
145
−
°C
Stereo BTL application; see Figs 6, 7, 10, 11, 14, 15, 18, 19, 21, 22, 23, 24, 26 and 28
THD
Po
Gv
2000 Apr 18
total harmonic distortion
output power
voltage gain
fi = 10 kHz; Po = 1 W; RL = 4 Ω;
filter: 22 Hz < f < 30 kHz
−
0.2
0.3
%
fi = 1 kHz; Po = 1 W; VP = 14.4 V;
RL = 4 Ω
−
0.05
0.1
%
fi = 1 kHz; Po = 10 W; VP = 24 V;
RL = 8 Ω
−
0.02
0.05
%
THD = 0.5%; VP = 14.4 V; RL = 4 Ω 14
15
−
W
THD = 0.5%; VP = 24 V; RL = 8 Ω
21
23
−
W
THD = 10%; VP = 14.4 V; RL = 4 Ω
18
20
−
W
THD = 10%; VP = 24 V; RL = 8 Ω
28
30
−
W
Vo(rms) = 3 V
31
32
33
dB
7
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
SYMBOL
TDA8580J
PARAMETER
αcs
channel separation
∆Gv
channel unbalance
Voffset(DC)
DC output offset voltage
CONDITIONS
Po = 2 W; fi = 1 kHz; RL = 4 Ω
MIN.
TYP.
MAX.
UNIT
60
65
−
dB
−
−
1
dB
on condition
−
0
140
mV
mute condition; RL = 4 Ω
−
10
20
mV
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V; note 3
−
100
150
µV
Vno(mute)
noise output voltage mute
note 3
−
0
20
µV
Vo(mute)
output voltage mute
Vi(rms) = 1 V
−
3
500
µV
SVRR
supply voltage ripple rejection
Rs = 0 Ω; fi = 1 kHz;
Vripple(p-p) = 2 V; on or mute
condition
50
60
−
dB
Zi
input impedance
23
30
37
kΩ
CMRR
common mode rejection ratio
−
60
−
dB
fi = 1 kHz; Po = 1 W; RL = 4 Ω
−
0.05
0.1
%
fi = 10 kHz; Po = 1 W; RL = 4 Ω;
filter: 22 Hz < f < 30 kHz
−
0.2
0.3
%
fi = 1 kHz; Po = 1 W; VP = 24 V,
RL = 4 Ω; filter: 22 Hz < f < 30 kHz
−
0.05
0.1
%
THD = 0.5%; VP = 14.4 V; RL = 4 Ω 3.8
4.0
−
W
THD = 0.5%; VP = 24 V; RL = 4 Ω
10.5
11.5
−
W
Rs = 0 Ω; Vi(rms) = 0.5 V; fi = 1 kHz
Quad SE application; see Figs 8, 9, 12, 13, 16, 17, 20, 25, 27 and 29
THD
Po
Gv
total harmonic distortion
output power
THD = 10%; VP = 14.4 V; RL = 4 Ω
4.9
5.2
−
W
THD = 10%; VP = 24 V; RL = 4 Ω
14
15
−
W
voltage gain
Vo(rms) = 3 V
25
26
27
dB
Po = 2 W; fi = 1 kHz; RL = 4 Ω
40
46
−
dB
−
−
1
dB
VP = 14.4 V; on condition
−
0
100
mV
VP = 14.4 V; mute condition;
RL = 4 Ω
−
10
20
mV
αcs
channel separation
∆Gv
channel unbalance
Voffset(DC)
DC output offset voltage
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V; note 3
−
80
120
µV
Vno(mute)
noise output voltage mute
note 3
−
0
20
µV
Vo(mute)
output voltage mute
Vi(rms) = 1 V
−
3
500
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V, on or
mute condition; Rs = 0 Ω
40
45
−
dB
Zi
input impedance
46
60
74
kΩ
CMRR
common mode rejection ratio
−
60
−
dB
Vi(rms) = 0.5 V; fi = 1 kHz; Rs = 0 Ω
Notes
1. Hysteresis between the rise and fall voltage when pin STANDBY is controlled with low ohmic voltage source.
2. At lower VP the voltage at the STANDBY pin for on condition will be adjusted automatically to maintain an
on condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
2000 Apr 18
8
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
Table 1
TDA8580J
Selection of standby, mute and on
VOLTAGE AT PIN STANDBY
VOLTAGE AT PIN MUTE
FUNCTION
< 0.8 V
don’t care
standby (off)
2 to 5.3 V
< 0.8 V
mute (DC settled)
2 to 5.3 V
2.5 to 5.3 V
on (AC operating)
≥ 8.0 V
don’t care
on (AC operating)
temperature
overload
handbook, halfpage
handbook, halfpage
normal
DIAG
active
DDD
normal
DIAG
amplifier
output
amplifier
output
MGE021
MGE020
Fig.3 Diagnostic waveform: temperature overload.
2000 Apr 18
Fig.4 Diagnostic waveform: DDD function.
9
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS700
1
handbook, halfpage
THD
(%)
short-circuit to
VP
GND
handbook, halfpage
(1)
10−1
DIAG
(2)
amplifier
output
10−2
10
MGE022
102
103
104 f (Hz) 105
i
RL = 4 Ω; VP = 14.4 V; 2 channel driven.
(1) Po = 1 W.
(2) Po = 10 W.
Fig.5
Diagnostic waveform: short-circuit to GND
or VP.
Fig.6
MGS701
1
Total harmonic distortion as a function of
frequency; BTL mode.
MGS702
1
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
10−1
10−1
(1)
(2)
10−2
10
102
103
10−2
10
104 f (Hz) 105
i
102
103
104 f (Hz) 105
i
RL = 8 Ω; VP = 24 V; 2 channel driven.
(1) Po = 1 W.
(2) Po = 10 W.
Po = 1 W; RL = 4 Ω; VP = 14.4 V; 4 channel driven.
Fig.7
Fig.8
Total harmonic distortion as a function of
frequency; BTL mode.
2000 Apr 18
10
Total harmonic distortion as a function of
frequency; SE mode.
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS703
1
MGS704
102
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
(2)
(1)
(3)
10
10−1
1
(1)
(1)
10−1
(2)
(2)
(3)
10−2
10
102
103
10−2
10−1
104 f (Hz) 105
i
10
Po (W)
102
RL = 4 Ω; VP = 14.4 V; 2 channel driven.
(1) fi = 10 kHz.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
RL = 4 Ω; VP = 24 V; 4 channel driven.
(1) Po = 5 W.
(2) Po = 1 W.
Fig.9
1
Total harmonic distortion as a function of
frequency; SE mode.
Fig.10 Total harmonic distortion as a function of
output power; BTL mode.
MGS705
102
handbook, halfpage
MGS706
102
handbook, halfpage
THD
(%)
THD
(%)
(2)
(3) (1)
10
(2)
(1)
(3)
10
1
1
(1)
(1)
10−1
10−1
(2)
(2)
(3)
(3)
10−2
10−1
1
10
Po (W)
10−2
10−1
102
1
Po (W)
10
RL = 8 Ω; VP = 24 V; 2 channel driven.
(1) fi = 10 kHz.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
RL = 4 Ω; VP = 14.4 V; 4 channel driven
(1) fi = 10 kHz.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
Fig.11 Total harmonic distortion as a function of
output power; BTL mode.
Fig.12 Total harmonic distortion as a function of
output power; SE mode.
2000 Apr 18
11
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS707
102
handbook, halfpage
MGS708
30
handbook, halfpage
THD
(%)
Pd
(W)
(2)
(3) (1)
10
20
1
10
(1)
10−1
(2)
(3)
10−2
10−1
1
10
Po (W)
0
102
0
RL = 4 Ω; VP = 24 V; 4 channel driven.
(1) fi = 10 kHz.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
10
20
Po (W)
fi = 1 kHz; RL = 4 Ω; VP = 14.4 V; 2 channel driven.
Fig.13 Total harmonic distortion as a function of
output power; SE mode.
Fig.14 Power dissipation as a function of output
power; BTL mode.
MGS709
MGS710
16
40
handbook, halfpage
handbook, halfpage
Pd
(W)
Pd
(W)
30
12
20
8
10
4
0
0
0
30
10
20
30
Po (W)
40
0
2
4
Po (W)
6
fi = 1 kHz; RL = 8 Ω; VP = 24 V; 2 channel driven.
fi = 1 kHz; RL = 4 Ω; VP = 14.4 V; 4 channel driven.
Fig.15 Power dissipation as a function of output
power; BTL mode.
Fig.16 Power dissipation as a function of output
power; SE mode.
2000 Apr 18
12
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS712
MGS711
40
40
handbook, halfpage
handbook, halfpage
Pd
(W)
Po
(W)
30
30
20
20
(1)
(2)
10
10
0
0
0
4
8
12
Po (W)
16
8
12
16
VP (V)
20
fi = 1 kHz; RL = 4 Ω; VP = 24 V; 4 channel driven.
fi = 1 kHz; RL = 4 Ω; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%.
Fig.17 Power dissipation as a function of output
power; SE mode.
Fig.18 Output power as a function of supply
voltage; BTL mode.
MGS714
MGS713
40
16
handbook, halfpage
handbook, halfpage
Po
(W)
Po
(W)
30
12
20
8
(1)
(1)
(2)
4
10
(2)
0
0
8
12
16
20
VP (V)
24
8
12
16
20
VP (V)
24
fi = 1 kHz; RL = 8 Ω; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%
fi = 1 kHz; RL = 4 Ω; 2 channel driven.
(1) THD = 0.5%.
(2) THD = 10%
Fig.19 Output power as a function of supply
voltage; BTL mode.
Fig.20 Output power as a function of supply
voltage; SE mode.
2000 Apr 18
13
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS717
34
∆Po
Gv
(dB)
(W)
33
0.4
32
0
31
−0.4
30
10
MGS715
0.8
handbook, halfpage
102
103
−0.8
10
104 f (Hz) 105
i
102
103
104 f (Hz) 105
i
Ci = 470 nF.
THD = 0.5%; RL = 4 Ω; VP = 14.4 V.
Fig.21 Gain as a function of input frequency;
BTL mode.
Fig.22 Power bandwidth as a function of
frequency; BTL mode.
MGS716
0.8
MGS718
−50
handbook, halfpage
handbook, halfpage
α cs
(dB)
∆Po
(W)
−54
0.4
−58
0
−62
(1)
−0.4
−0.8
10
−66
102
103
−70
10
104 f (Hz) 105
i
(2)
102
103
104 f (Hz) 105
i
THD = 0.5%; RL = 8 Ω; VP = 24 V.
Po = 2 W; RL = 4 Ω; VP = 14.4 V.
(1) Channels 3 and 4 to channels 1 and 2.
(2) Channels 1 and 2 to channels 3 and 4.
Fig.23 Power bandwidth as a function of
frequency; BTL mode.
Fig.24 Channel separation as a function of
frequency; BTL mode.
2000 Apr 18
14
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS719
−20
MGS720
−20
handbook, halfpage
handbook, halfpage
α cs
(dB)
SVRR
(dB)
−30
−40
−40 (1)
(1)
(2)
(3)
(2)
−60
−50
−60
10
102
103
−80
10
104 f (Hz) 105
i
102
103
104 f (Hz) 105
i
Po = 2 W; RS = 0 Ω; RL = 4 Ω; VP = 14.4 V.
(1) Channel 1 to channel 2.
(2) Channel 1 to channel 3.
(3) Channel 1 to channel 4.
Rs = 0 Ω; Vripple(p-p) = 2 V.
(1) Vp = 14.4 V.
(2) Vp = 24 V.
Fig.25 Channel separation as a function of
frequency; SE mode.
Fig.26 SVRR as a function of frequency;
BTL mode.
MGS721
−20
handbook, halfpage
SVRR
(dB)
−30
−40
(1)
(2)
−50
−60
10
102
103
104 f (Hz) 105
i
Rs = 0 Ω; Vripple(p-p) = 2 V.
(1) Vp = 14.4 V.
(2) Vp = 24 V.
Fig.27 SVRR as a function of frequency; SE mode.
2000 Apr 18
15
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
• The 4.7 µF capacitor and the 10 kΩ resistor connected
to pin 5 or to pin 13 are used to:
APPLICATION INFORMATION
The application circuit depends on the supply voltage
used. For supply voltages below 18 V the application
circuits are shown in Figs 28, 29 and 30.
– provide a stable loop
– control the switch on/off behaviour
– minimize the effect due to clip detection.
The typical application circuits for the different supply
voltage ranges are shown in Figs 31, 32 and 33.
Use of common buffer
Additional information for the applications shown in
Figs 28, 29 and 30
In SE applications the buffer output is used in place of a
SE capacitor. To minimize the crosstalk (high channel
separation) and distortion it is advised to connect the
speaker wires as closely as possible to pin 9 without using
a shared wire. Internally in the IC all the efforts have been
taken to minimize the crosstalk by locating the feedback
loops as close as possible to pin 9.
The RC-network connected to pin 5 determines the
amplifier switch on/off behaviour as follows;
• Switched from STANDBY to MUTE when Vswitching
(typically 9 V) is enabled and the switch SW1 is closed.
During MUTE there is no output noise and no offset.
• Switched from MUTE to ON when the switch SW1 is
opened. During switching ON the offset and noise are
gradually built up. The time constant is fixed by R1 × C1.
If a common wire is shared by all the speakers, the series
resistance of this shared wire will introduce added signal
voltages resulting from the currents flowing through this
wire when a connected amplifier is driven by a signal.
The inputs can be tied together and connected to one input
capacitor. Because the input resistance is decreased by a
factor of 2, the low frequency roll-off is shifted to a higher
frequency when Ci is kept the same value.
Optimize the THD performance
The TDA8580J application can be optimized to gain the
lowest THD possible by applying the following guidelines:
The low frequency cut-off is determined by;
• SE application: minimize the shared wires to pin 9 (see
section “Use of common buffer”).
f –3dB = 1 ⁄ ( 2π × R i × C i )
• Because the inputs are quasi differential, ground loops
can be avoided by connecting the negative terminal of
the 100 µF signal ground capacitor (connected to
pin 12) to the ground pin of the signal processor.
1
= --------------------------------------------------------------------- = 12 Hz.
3
–9
2π × 60 × 10 × 220 × 10
The Boucherot network connected to the buffer (pin 9) is
necessary to guarantee a low output resistance at high
frequencies when the buffer is loaded (only in SE
applications).
Note: do not leave the inputs in the open condition to
prevent HF oscillation.
• Increase the value of electrolytic supply capacitor
(typical value 1000 µF) to the maximum possible to
minimize cross talk and distortion at low signal
frequencies, due to the PSRR (power supply rejection
ratio). For suppressing high frequency transients on the
supply line a capacitor (typical value 100 nF) with a low
ESR is required to be connected in parallel with the
electrolytic capacitor. The capacitor combination must
be placed as close as possible to the IC (using short
interconnection tracks).
Additional information for the applications shown in
Figs 31, 32 and 33
Short circuit behaviour at high supply voltages (Vp > 18 V):
• When Vp > 18 V it is advisable to use the applications
given in Figs 32 and 33. In these applications the
diagnostics output is tied to pin 5 (one pin operation) or
pin 13 (two pin operation). During a fault condition the
amplifier is soft-muted and the amplitude of the output
signal is reduced at:
Headroom
– over temperature (still large dynamic range)
A typical CD requires at least 12 dB dynamic headroom
(a factor of 15.85), compared with the average power
output, for passing the loudest parts without distortion.
– short to ground and over load (output current
reduced)
2000 Apr 18
16
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
For BTL application at Vp = 24 V, RL = 8 Ω and Po at
THD = 0.5% (see Fig.15), the Average Listening
Level (ALL) for music power without distortion yields:
23
P o ( ALL ) = --------------- = 1.45 W.
15.85
EXAMPLE
Measured or given values:
Vp = 24 V
RL = 8 Ω (2 × BTL)
Measured worst case Pd (sine wave) = 32 W
Table 2
Pd as a function of headroom (music signals) for
Po = 2 × 23 W (THD = 0.5%).
HEADROOM
Tj(max) = 150oC
Tamb(max) = 60oC
Pd
0 dB
32 W
12 dB
16 W
Rth(j-c) = 1.5 K/W
T j ( max ) – T amb ( max )
R th ( hs ) = ------------------------------------------------- – R th ( j – c )
Pd
150 – 60
= ---------------------- – 1.5 = 1.3 K/W
32
So for the average music listening level a total power
dissipation of 16 W can be used for calculating the
optimum heat sink thermal resistance.
Table 3
Heatsink calculation
HEAD ROOM
The measured thermal resistance of this package Rth(j-c) is
a maximum of 1.5 K/W. For a maximum ambient
temperature of 60oC the required heatsink thermal
resistance can be calculated as shown in the following
example.
2000 Apr 18
Heatsink thermal resistance as a function of
headroom for Po = 2 × 23 W (THD = 0.5%).
17
Pd
Rth(hs)
0 dB
32 W
1.3 K/W
12 dB
16 W
4.12 K/W
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
1000 µF
16/40 V
220 nF
VP1
VP2
3
15
IN1 7
60
kΩ
VinL
TDA8580J
45 kΩ
−
−
V/I
+
+
IN2 8
60
kΩ
+
−
V/I
−
+
OA
4 OUT2−
9 BUFFER
45
kΩ
60
kΩ
IN3 10
60
kΩ
IN4 11
BUFFER
45 kΩ
−
−
V/I
+
+
−
V/I
14 OUT3−
+
−
+
+
−
OA
OA
17
45 kΩ
DIAGNOSTIC
INTERFACE
Vswitching
(9 V typical)
2
PGND1
+5 V
6
DIAG
16
PGND2
MGU075
R1
(1)
R2
4.7 µF
SW1
(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.28 Stereo bridge-tied load application; VP ≤ 18 V.
2000 Apr 18
18
4 or 8 Ω
OUT4+
MUTE 13
5
4 or 8 Ω
45
kΩ
IN5 12
STANDBY
−
45 kΩ
BUFFER
VinR
1 OUT1+
Vpx
30 kΩ
100 µF
10 V
OA
+
Vpx
220 nF
VP
100 nF
10
kΩ
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
VP
handbook, full pagewidth
1000 µF
16/40 V
VP1
VP2
3
15
100 nF
220 nF IN1 7
VinR
60
kΩ
TDA8580J
FRONT
45 kΩ
−
−
V/I
+
+
220 nF IN2 8
60
kΩ
VinL
+
−
V/I
−
4 OUT2−
OA
−
45 kΩ
9
45
kΩ
IN5 12
60
kΩ
IN3 10
220 nF
IN4 11
220 nF
BUFFER
+
−
V/I
+
+
14 OUT3−
OA
−
+
+
−
V/I
4 or 8 Ω
−
45 kΩ
−
−
2Ω
BUFFER
VinR
60
kΩ
17
OA
OUT4+
+
4 or 8 Ω
45 kΩ
+5 V
VinL
MUTE 13
STANDBY
5
DIAGNOSTIC
INTERFACE
Vswitching
(9 V typical)
2
PGND1
6
DIAG
16
PGND2
MGU077
R1
(1)
R2
4.7 µF
SW1
(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.29 Quad single-ended application; VP ≤ 18 V.
2000 Apr 18
19
4 or 8 Ω
+
45
kΩ
BUFFER
REAR
4 or 8 Ω
−
Vpx
30 kΩ
220 nF
OUT1+
+
+
Vpx
100 µF
10 V
1
OA
10
kΩ
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
220 nF
VP1
VP2
3
15
100 nF
IN1 7
45 kΩ
−
60
kΩ
VinR
−
V/I
+
TDA8580J
+
IN2 8
−
V/I
−
OUT1+
+
4 OUT2−
OA
45 kΩ
45
kΩ
30 kΩ
9
45
kΩ
BUFFER
60
kΩ
+
−
V/I
+
14 OUT3−
OA
−
+
+
60
kΩ
−
IN4 11
−
V/I
4 or 8 Ω
−
45 kΩ
+
IN3 10
220 nF
BUFFER
−
IN5 12
2Ω
BUFFER
VinR
220 nF
4 or 8 Ω
−
Vpx
Vpx
100 µF
10 V
1
OA
+
+
60
kΩ
220 nF
VP
1000 µF
16/40 V
17
OA
OUT4+
4 or 8 Ω
+
45 kΩ
+5 V
VinL
MUTE 13
STANDBY 5
DIAGNOSTIC
INTERFACE
Vswitching
(9 V typical)
2
PGND1
6
DIAG
16
PGND2
MGU076
R1
(1)
R2
4.7 µF
SW1
(1) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.30 Dual single-ended and one bridge-tied load application; VP ≤ 18 V.
2000 Apr 18
20
10
kΩ
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
handbook, full pagewidth
TDA8580J
VP
100 nF
VP1
1000 µF
IN1
IN2
inputs
IN3
Vswitching
IN4
(9 V typical)
IN5
(3)
R1
45 kΩ
7
3
8
4
10
14
11
TDA8580J
17
9
12
OUT1+
OUT2−
OUT3−
(1)
OUT4 +
BUFFER
2 Ω (2)
220 nF (2)
6
5
2
R2
15 kΩ
1
100 µF
STANDBY
(3)
VP2
15
DIAG
10 kΩ
+5 V
16
PGND1
MGS699
PGND2
4.7 µF
SW1
(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω).
(2) RC combination not required in BTL mode.
(3) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.31 Application 1; supply voltage range 8 V < VP ≤ 18 V; 1-pin and 2-pin operation.
handbook, full pagewidth
VP
100 nF
VP1
1000 µF
IN1
IN2
inputs
IN3
IN4
Vswitching
(9 V typical)
(3)
R1
45 kΩ
IN5
100 µF
MUTE
STANDBY
7
3
R2
15 kΩ
4
10
14
11
TDA8580J
17
9
12
OUT1+
OUT2−
OUT3−
(1)
OUT4 +
BUFFER
2 Ω (2)
220 nF (2)
13
6
5
DIAG
16
PGND1
4.7 µF
1
8
2
(3)
VP2
15
PGND2
3.6 V
SW1
MGS697
(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω).
(2) RC combination not required in BTL mode.
(3) R1 and R2 values depend on Vswitching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.32 Application 2; supply voltage range 18 V < VP ≤ 24 V; 1-pin operation.
2000 Apr 18
21
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth VP
100 nF
VP1
1000 µF
IN1
IN2
inputs
IN3
IN4
IN5
7
3
VP2
15
8
4
10
14
11
TDA8580J
13
6
5
2
10 kΩ
17
9
12
100 µF
STANDBY
1
OUT1+
OUT2−
OUT3−
(1)
OUT4 +
2 Ω (2)
BUFFER
220 nF (2)
MUTE
DIAG
10 kΩ
16
PGND1
4.7 µF
PGND2
4.7 µF
MSB
MUTE
MGS698
(1) Load conditions: quad SE (4 x 4 Ω), or dual BTL (2 x 8 Ω), or dual SE (2 x 4 Ω) and one BTL (1 x 8 Ω)
(2) RC combination not required in BTL mode.
Fig.33 Application 3; supply voltage range 18 V < VP ≤ 24 V; 2-pin operation.
INTERNAL PIN CONFIGURATION
PIN
NAME
7, 8, 10, 11
and 12
Inputs
EQUIVALENT CIRCUIT
Vint
Vint
12
7, 8, 10 and 11
MGS723
1, 4, 9, 14
and 17
Outputs
VP
1, 4, 9, 14, and 17
0.5 VP
2000 Apr 18
22
MGL849
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
PIN
NAME
5
STANDBY
TDA8580J
EQUIVALENT CIRCUIT
VP
5
MGL848
13
MUTE
Vint
13
4V
MGS724
6
DIAG
6
MGS722
2000 Apr 18
23
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
B
j
E
A
L3
L
Q
c
1
v M
17
e1
Z
bp
e
e2
m
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
bp
c
D (1)
d
Dh
E (1)
e
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
2.54
e1
e2
1.27 5.08
Eh
j
L
L3
m
Q
v
w
x
Z (1)
6
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.4
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-12-16
99-12-17
SOT243-1
2000 Apr 18
EUROPEAN
PROJECTION
24
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
The total contact time of successive solder waves must not
exceed 5 seconds.
SOLDERING
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
DBS, DIP, HDIP, SDIP, SIL
WAVE
suitable(1)
suitable
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2000 Apr 18
25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Apr 18
26
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
NOTES
2000 Apr 18
27
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Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
753503/25/03/pp28
Date of release: 2000
Apr 18
Document order number:
9397 750 05478