Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK7528-55A BUK7628-55A QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. UNIT 55 41 99 175 V A W ˚C 28 mΩ PINNING TO220AB & SOT404 PIN PIN CONFIGURATION SYMBOL DESCRIPTION 1 gate 2 drain 3 source d tab mb g 2 1 tab/mb drain 3 SOT404 BUK7628-55A 1 2 3 TO220AB BUK7528-55A s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 55 55 20 42 30 168 99 175 V V V A A A W ˚C TYP. MAX. UNIT - 1.5 K/W in free air 60 - K/W Minimum footprint, FR4 board 50 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient(TO220AB) Thermal resistance junction to ambient(SOT404) - Rth j-a Rth j-a June 2000 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7528-55A BUK7628-55A STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage VGS = 0 V; ID = 0.25 mA; VGS(TO) Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; IGSS RDS(ON) Gate source leakage current Drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A Tj = 175˚C Tj = 175˚C MIN. TYP. MAX. UNIT 55 50 2 1 - 3 0.05 2 23.8 - 4 4.4 10 500 100 28 56 V V V V V µA µA nA mΩ mΩ MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 874 218 137 1165 261 188 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; Rload =1.2Ω; VGS = 5 V; RG = 10 Ω - 14 68 83 43 21 102 116 60 ns ns ns ns Ld Internal drain inductance - 4.5 - nH Ld Internal drain inductance - 3.5 - nH Ld Internal drain inductance - 2.5 - nH Ls Internal source inductance Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT - - 41 A IF = 25 A; VGS = 0 V IF = 41 A; VGS = 0 V - 0.85 1.1 163 1.2 - A V V IF = 20 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V - 45 88 50 96 ns nC REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge June 2000 CONDITIONS 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7528-55A BUK7628-55A AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 34 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C 120 Normalised Power Derating PD% MIN. TYP. MAX. UNIT - - 58 mJ ID / A 1000 110 100 RDS(on) = VDS/ ID tp = 90 100 80 10us 70 60 100 us 50 10 40 1 ms D.C. 30 10 ms 20 100 ms 10 1 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 1 1000 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Normalised Current Derating ID% 100 VDS / V Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 10 10 Zth / (K/W) 110 D= 100 90 1 80 70 0.5 0.2 60 0.1 50 D= PD tp T tp 0.1 40 30 0.05 0.02 20 T t 0 10 0.01 0.000001 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V June 2000 0.0001 0.01 VDS / V 1 100 10000 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET ID / A 18.0 90 16.0 12.0 80 11.5 70 100 BUK7528-55A BUK7628-55A 9.5 90 9.0 11.0 80 8.5 70 8.0 60 VGS / V = 60 7.5 50 50 7.0 40 40 6.5 30 30 6.0 20 10 5.0 0 5.5 10 4.5 0 2 4 VDS / V 6 8 25 16 6.0 4 6 VGS/V 8 10 12 gfs / S 14 VGS / V = 60 2 Fig.8. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj RDS(ON) / mOhm 65 175 10 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 6.5 55 12 7.0 10 50 8.0 45 8 40 6 35 9.0 30 4 10.0 2 25 20 0 0 10 20 30 40 50 ID / A 60 70 80 90 0 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 55 Tj / ˚C = 20 0 0 70 ID / A 100 10.5 10.0 10 20 30 40 ID / A 50 60 70 80 Fig.9. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V RDS(ON) / mOhm 2.5 Rds(on) normlised to 25degC 50 45 2 40 35 1.5 30 25 1 20 15 10 6 8 10 12 14 VGS / V 16 18 0.5 -100 20 Fig.7. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(VGS); conditions ID = 25 A; June 2000 -50 0 50 Tmb / degC 100 150 200 Fig.10. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET 5 VGS(TO) / V BUK7528-55A BUK7628-55A BUK759-60 12 max. VGS / V 10 4 VDS= 14V typ. 8 3 VDS= 44V 6 min. 2 4 1 2 0 -100 0 -50 0 50 Tj / C 100 150 0 200 Fig.11. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 10 15 QG / nC 20 25 30 Fig.14. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS Sub-Threshold Conduction 1E-01 5 120 IF / A 100 1E-02 80 2% 1E-03 typ 98% Tj / ˚C = 175 60 25 1E-04 40 20 1E-05 0 1E-06 0 1 2 3 4 0.0 5 Fig.12. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 120 1.0 1.5 WDSS% 110 1.8 100 1.6 90 1.4 80 1.2 70 Ciss 1.0 60 50 0.8 40 0.6 30 Coss 0.4 20 Crss 0.2 10 0.1 1 VDS/V 10 0 100 20 Fig.13. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz June 2000 VSDS / V Fig.15. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Thousands / pF 0.0 0.01 0.5 40 60 80 100 120 Tmb / C 140 160 180 Fig.16. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7528-55A BUK7628-55A + VDD + VDD RD L VDS VDS - VGS - VGS -ID/100 T.U.T. 0 RGS 0 T.U.T. R 01 shunt Fig.17. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) June 2000 RG Fig.18. Switching test circuit. 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7528-55A BUK7628-55A MECHANICAL DATA Dimensions in mm Net Mass: 2 g Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 e e 3 b c 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". June 2000 7 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7528-55A BUK7628-55A MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 OUTLINE VERSION D max. D1 E 11 1.60 1.20 10.30 9.70 e Lp HD Q 2.54 2.90 2.10 15.40 14.80 2.60 2.20 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT404 Fig.20. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". June 2000 8 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7528-55A BUK7628-55A MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.21. SOT404 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 2000 9 Rev 1.100