INTEGRATED CIRCUITS DATA SHEET TEA5591 AM/FM radio receiver circuit Product specification File under Integrated Circuits, IC01 June 1989 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 GENERAL DESCRIPTION The TEA5591 is an integrated radio circuit which is designed for use in portable receivers and clock radios. The IC is also applicable to mains-fed AM an AM/FM receivers and car radio-receivers. The main advantage of this IC is its ability to operate over a wide range of supply voltages without loss of performance. The AM circuit incorporates a balanced mixer and a ‘one-pin’ oscillator, which operates in the 0.6 MHz to 30 MHz frequency range, with amplitude control. The circuit also includes an IF amplifier, a detector and an AGC circuit which controls the IF amplifier and the mixer. The FM circuit incorporates an RF amplifier, a balanced mixer and a ‘one-pin’ oscillator together with two AC coupled IF amplifiers (with distributed selectivity), a quadrature demodulator for the ceramic filter and internal AFC. Features • DC AM/FM switch facility • Three internal separate stabilizers to enable operation over a wide range of supply voltages (1.8 to 15 V) • All pins (except pin 9) are ESD protected. QUICK REFERENCE DATA PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT VP 1.8 3.0 15 V AM part IP(AM) − 14 19 mA FM part IP(FM) − 17 23 mA Tamb −15 − +60 °C Supply voltage (pin 8) Supply current Operating ambient temperature range AM performance (pin 13) m = 0.3 RF sensitivity RF input voltage Vo = 10 mV Vi − 3.5 − µV RF input voltage (S+N)/N = 26 dB Vi − 17 − µV Signal plus noise-to-noise ratio Vi = 1 mV (S+N)/N − 48 − dB AF output voltage Vo − 50 − mV Total harmonic distortion THD − 0.7 − % Vi − 2.3 4.0 µV Vi = 3.0 µV (S+N)/N 23 26 − dB Vi = 1 mV (S+N)/N − 60 − dB Vi = 100 µV Vo 75 90 − mV THD − 0.8 − % FM performance (pin 1) ∆f = 22.5 kHz RF sensitivity RF input voltage −3 dB before limiting Signal plus noise-to-noise ratio for: RF input signal voltage (Vi) AF output voltage Total harmonic distortion PACKAGE OUTLINE 20-lead DIL; plastic (SOT146); SOT146-1; 1996 August 14. June 1989 2 Philips Semiconductors Product specification TEA5591 Fig.1 Block diagram. AM/FM radio receiver circuit June 1989 3 Philips Semiconductors Product specification TEA5591 Fig.2 Equivalent circuit diagram. AM/FM radio receiver circuit June 1989 4 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 PINNING Fig.3 Pinning diagram. June 1989 5 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Supply voltage (pin 8) VP − 18 V Storage temperature range Tstg −65 + 150 °C Operating ambient temperature range Tamb −15 + 60 °C Total power dissipation Ptot Fig.4 Power derating curve. June 1989 6 see Fig.4 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 DC CHARACTERISTICS All voltages are referenced to pin 3; all input currents are positive; all parameters are measured in Fig.5 at nominal supply voltage VP = 3 V; Tamb = 25 °C unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT VP 1.8 3.0 15 V pin 1 V1 − 0.90 − V pin 2 V2 − 1.60 − V pin 4 V4 − 0.85 − V pin 5 V5 1.5 1.60 1.75 V pin 6 V6 − 1.48 − V pin 9 V9 − 1.05 − V pin 14 V14 − 1.63 − V pin 17 V17 − 0.60 − V pin 19 V19 − 1.60 − V pin 2 V2 − 1.10 − V pin 12 V12 − 1.60 − V pin 15 V15 − 1.54 − V AM part IP(AM) − 14 19 mA FM part IP(FM) − 17 23 mA June 1989 7 Supply voltage Voltages (FM) Voltages (AM) Supply current Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 AC CHARACTERISTICS VP = 3 V; Tamb = 25 °C unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT AM PART Input conductance pin 4 f = 0.5 MHz gie − 1.7 − ms Input capacitance pin 4 f = 0.5 MHz Cie − 5 − pF Input conductance pin 13 f = 1.0 MHz gie − 230 − µs Input capacitance pin 13 f = 1.0 MHz Cie − 13 − pF Output conductance pin 7 f = 0.5 MHz goe − 4 − µs Output capacitance pin 7 f = 0.5 MHz Coe − 4.7 − pF Conductance pin 11 f = 1.5 MHz ge − −6.8 − ms Capacitance pin 11 f = 1.5 MHz Ce − 25 − pF Input conductance pin 4 f = 10.7 MHz gie − 2.7 − ms Input capacitance pin 4 f = 10.7 MHz Cie − 6 − pF FM PART Input conductance pin 14 f = 10.7 MHz gie − 2.8 − ms Input capacitance pin 14 f = 10.7 MHz Cie − 2.5 − pF Output conductance pin 6 f = 10.7 MHz goe − 2.8 − ms Output capacitance pin 6 f = 10.7 MHz Coe − 3.0 − pF Output conductance pin 16 f = 10.7 MHz goe − 1.6 − µs Output capacitance pin 16 f = 10.7 MHz Coe − 4.5 − pF Conductance pin 9 f = 10.7 MHz ge − 880 − µs Capacitance pin 9 f = 10.7 MHz Ce − 3.6 − pF Conductance pin 18 f = 100 MHz ge − −4 − ms Capacitance pin 18 f = 100 MHz Ce − 10 − pF June 1989 8 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 AC CHARACTERISTICS All parameters are measured in Fig.5 at nominal supply voltage VP = 3 V; Tamb = 25 °C unless otherwise specified. RF conditions: Input frequency 1 MHz; 30% modulation where fmod = 1 kHz; unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT AM PERFORMANCE RF sensitivity AF output voltage for: Vi = 7.5 µV no AGC Vo 16 30 40 mV Noise Signal plus noise-to-noise ratio for: RF input signal voltage of Vi = 17 µV (S + N)/N 23 26 − dB Vi = 1 mV (S + N)/N − 48 − dB Optimum source impedance ZS − 1.8 − kΩ optimum noise impedance NF − 4 − dB voltage Vi1 = 100 mV Vi1/Vi2 80 86 − dB AF output voltage Vi = 100 µV Vo 40 50 60 mV Total harmonic distortion Vi = 100 µV to 10 mV THD − 0.7 1.5 % m = 0.8 THD − 3 5 % Vi = 80 mV; m = 0.8 THD − − 8 % Noise factor AGC Change in RF input voltage for 10 dB change in output Vi = 100 µV to 10 mV; June 1989 9 Philips Semiconductors Product specification AM/FM radio receiver circuit PARAMETER TEA5591 CONDITIONS SYMBOL MIN. TYP. MAX. UNIT IF suppression Vo = 30 mV α − 20 − dB fosc = 1.5 MHz Vosc − 150 190 mV fosc = 30.5 MHz Vosc − 150 − mV VP = 1.5 V Vosc 100 − − mV ∆Vi − −2 − dB ∆Vo − 1 − dB LW ∆fosc − 500 − Hz MW ∆fosc − 300 − Hz SW ∆fosc − 100 − kHz ∆Vi − 0 − dB ∆Vo − 0.5 − dB LW ∆fosc − 6 − kHz MW ∆fosc − 0.1 − kHz SW ∆fosc − 30 − kHz (note 1) Oscillator (pin 11) Input voltage Temperature behaviour −15 to + 60 °C (only the IC) Sensitivity Output voltage Vi = 1 mV Oscillator frequency Supply voltage behaviour VP = 1.8 to 15 V Sensitivity Output voltage Vi = 1 mV Oscillator frequency Transimpedance (Ztr) = V4/i7 = 900Ω. June 1989 10 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 AC CHARACTERISTICS All parameters are measured in Fig.5 at nominal supply voltage VP = 3 V; Tamb = 25 °C unless otherwise specified RF conditions: Input frequency 100 MHz; frequency deviation f = ± 22,5 kHz and fmod = 1 kHz PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT FM PERFORMANCE RF sensitivity RF input voltage −3 dB before ViFM − 2.3 4.0 µV Vi = 3.0 µV (S + N)/N 23 26 − dB Vi = 1 mV (S + N)/N − 60 − dB Zsource − 50 − Ω impedance NF − 6 − dB Vi = 100 µV Vo 75 90 − mV THD − 0.8 − % THD − 3 − % THD − 3 − % limiting Noise Signal plus noise-to-noise ratio for: RF input signal voltage (Vi) Optimum source impedance Noise factor AF output voltage optimum noise Total harmonic distortion Vi = 30 µV to 50 mV Vi = 1 mV; ∆f = 75 kHz Vi = 100 mV; ∆f = 75 kHz AM suppression note 2 RF input signal Vi = 100 µV to 10 mV AMS − 50 − dB Oscillator voltage (pin 18) fosc = 100 MHz Vosc − 220 − mV VP = 1.5 V Vosc 100 − − mV IFrr − 60 − dB V17 = 1.4 V ∆f − −620 − kHz V17 = 0.2 V ∆f − +420 − kHz IF rejection ratio AFC June 1989 fosc = 111.2 MHz 11 Philips Semiconductors Product specification AM/FM radio receiver circuit PARAMETER Temperature behaviour TEA5591 CONDITIONS SYMBOL MIN. TYP. MAX. UNIT −15 to + 60 °C (only the IC) RF sensitivity −3 dB limiting ∆Vi − −6 − dB Output voltage Vi = 100 µV ∆Vo − −2 − dB ∆fosc − −0.3 − % Oscillator frequency Supply voltage behaviour VP = 1.8 to 15 V RF sensitivity −3 dB limiting ∆Vi − 6 − dB Output voltage Vi = 100 µV ∆Vo − 0.5 − dB Oscillator frequency ∆fosc − 100 − kHz Oscillator voltage ∆Vosc − 1.0 − dB Notes to the AC characteristics 1. V i at f i = 455 kHz α = ---------------------------------------------. V i at f i = 1 MHz 2. AM suppression is measured at: fmod = 400 Hz, m = 0.3 for AM; fmod = 1 kHz, ∆f = 75 kHz for FM. June 1989 12 Philips Semiconductors Product specification TEA5591 Fig.5 Test circuit. AM/FM radio receiver circuit June 1989 13 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 Fig.6 Application diagram. APPLICATION INFORMATION June 1989 14 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 Component data N1 L Wire diameter = = = = 4.5 0.12 µH 0.8 mm diameter 4.5 mm Fig.7 FM BFP coil (L1). N1 = 132 N2 = 14 N3 = 9 C = 180 pF (internal) Lprim = 660 µH fo = 468 kHz Wire = 0.07 mm diameter Coil type 7P-TOKO Material 7MCS Fig.8 AM IF coil (L2). TOKO sample no. 7MCS-7P. N1 N2 Lprim Wire = = = = 86 11 270 µH 0.07 mm diameter Coil type 7P-TOKO Material 7BRS Fig.9 Oscillator coil (L3). TOKO sample no. 7BRS-7P. June 1989 15 Philips Semiconductors Product specification AM/FM radio receiver circuit N1 N2 C fo = = = = TEA5591 11 2 85 pF (internal) 10.7 MHz Fig.10 FM IF coil (L5). TOKO equivalent no. 119ACS-30120M. N1 L = 1.5 = 0.03 µH Fig.11 Oscillator coil (L6). TOKO equivalent no. 301 SN-0100. N1 L = 2.5 = 0.05 µH Fig.12 FM RF coil (L7). TOKO equivalent no. 301 SN-0200. June 1989 16 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 FERROCEPTOR COIL L4: N1 = 105; N2 = 10; L = 625 µH CERAMIC FILTERS AM IF (K1). SFZ468 HL. FM IF (K2). SFE10 . 7 MS2. FM detector (K3). CDA10 . 7 MC1. TUNING CAPACITORS AM 140/82 pF FM 2 × 20 pF June 1989 17 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 Physical dimensions of the printed circuit board = 5.0 × 8.1 cm. Fig.13 Printed-circuit board component side, showing component layout. For circuit diagram see Fig.6. Fig.14 Printed-circuit board showing track side. June 1989 18 Philips Semiconductors Product specification TEA5591 June 1989 Fig.16 FM signal levels. Fig.15 AM signal levels. AM/FM radio receiver circuit 19 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 Fig.17 Signal and noise (VoAF), noise (VoN); reference level 0 dB = 100 mV, and total harmonic distortion (THD) as a function of input voltage (Vi) at pin 13. Measured in test circuit Fig.5. AM AGC is measured at fi = MHz; fmod = 1 kHz; m = 0.3. AM distortion is measured at fi = 1 MHz; fmod = 1 kHz. Fig.18 Signal and noise (VoAF), noise (VoN); reference level 0 dB = 100 mV; AM suppression (AMS) and total harmonic distortion (THD) as a function of input voltage (V) at pin 1. Measured in test circuit Fig.5 at fi = 98 MHz; fmod = 1 kHz; ∆f 22.5 kHz. AM suppression is measured at fmod = 400 Hz, m= 0.3 for AM; fmod = 1 kHz, ∆f = 75 kHz for FM. June 1989 20 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 PACKAGE OUTLINE DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 11 20 pin 1 index E 1 10 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c mm 4.2 0.51 3.2 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 inches 0.17 0.020 0.13 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 D (1) e e1 L ME MH w Z (1) max. 6.40 6.22 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.0 0.25 0.24 0.10 0.30 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.078 E (1) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT146-1 June 1989 REFERENCES IEC JEDEC EIAJ SC603 21 EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-05-24 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5591 The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1989 22