INTEGRATED CIRCUITS DATA SHEET TEA5710; TEA5710T AM/FM radio receiver circuit Product specification File under Integrated Circuits, IC01 March 1994 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T FEATURES APPLICATIONS • Wide supply voltage range: 2.0 to 12 V • Portable AM/FM radio • Low current consumption: 7.5 mA at AM, 9.0 mA at FM • Clock radio • High selectivity with distributed IF gain • Personal headphone radio • LED driver for tuning indication • High input sensitivity: 1.6 mV/m (AM), 2.0 µV (FM) for 26 dB S/N DESCRIPTION The TEA5710 is a high performance Bimos IC for use in AM/FM radios. All necessary functions are integrated: from AM and FM front-end to detector output stages. • Good strong signal behaviour: 10 V/m at AM, 500 mV at FM • Low output distortion: 0.8% at AM, 0.3% at FM • Designed for simple and reliable PC-board layout • High impedance MOSFET input on AM QUICK REFERENCE DATA Conditions AM: fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. Conditions FM: fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL PARAMETER MIN. TYP. MAX. UNIT 2.0 − 12 V in AM mode 5.6 7.5 9.9 mA in FM mode 7.3 9.0 11.2 mA operating ambient temperature range −15 − +60 °C Vin1 RF sensitivity 40 55 70 µV V13 AF output voltage 36 45 70 mV THD total harmonic distortion − 0.8 2.0 % RF sensitivity 1.0 2.0 3.8 µV V13 AF output voltage 47 58 69 mV THD total harmonic distortion − 0.3 0.8 % VP positive supply voltage IP supply current Tamb AM performance FM performance Vin3 ORDERING INFORMATION EXTENDED TYPE NUMBER PACKAGE PINS PIN POSITION MATERIAL CODE TEA5710 24 SDIL plastic SOT234AG(1) TEA5710T 24 SO24L plastic SOT137A(2) Notes 1. SOT234-1; 1996 August 27. 2. SOT137-1; 1996 August 27. March 1994 2 Philips Semiconductors Product specification AM/FM radio receiver circuit FM-RFI handbook, full pagewidth FM-RFO 1 RFGND FM-OSC VP RIPPLE VSTABA VSTABB IFGND AM-OSC AM-RFI 24 20 FM FRONT-END FM-MIXER 4 FM MIXER TEA5710; TEA5710T FM-IF1I FM-RF1O 6 FM-IF2I 8 10 FM IF 1 FM IF 2 12 FM DETECTOR 18 16 FM OSCILLATOR 22 5 FM TEA5710 TEA5710T AM 14 AM/FM SWITCH 21 STABILIZER AM/FM AM-AGC/ FM-AFC 9 AM OSCILLATOR 11 AGC AM/FM INDICATOR 15 AM DETECTOR 13 IND 17 23 AM FRONT-END AM MIXER 3 AM-MIXER AM-IF 2 AM-IF1I 7 AM-IF2I/O Fig.1 Block diagram. March 1994 FM-DEM 3 AF 19 SUBGND MGE106 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T PINNING SYMBOL PIN DESCRIPTION FM-RFI 1 FM-RF aerial input (input impedance typ. 50 Ω) AM-IF1I 2 input from IFT or ceramic filter (input impedance typ. 3 kΩ) AM-MIXER 3 open-collector output to IFT FM-MIXER 4 output to ceramic IF filter (output impedance typ. 330 Ω) VSTABA 5 stabilized internal supply voltage (A) FM-IF1I 6 first FM-IF input (input impedance typ. 330 Ω) AM-IF2I/O 7 input/output to IFT; output: current source FM-IF1O 8 first FM-IF output (output impedance typ. 330 Ω) VSTABB 9 stabilized internal supply voltage (B) FM-IF2I 10 second FM-IF input (input impedance typ. 330 Ω) IFGND 11 ground of IF and detector stages FM-DEM 12 ceramic discriminator pin AF 13 audio output (output impedance typ. 5 kΩ) AM/FM 14 switch terminal: open for AM; ground for FM IND 15 field-strength dependent indicator VP 16 positive supply voltage AM-OSC 17 parallel tuned AM-OSC circuit to ground FM-OSC 18 parallel tuned FM-OSC circuit to ground SUBGND 19 substrate and RF ground FM-RFO 20 parallel tuned FM-RF circuit to ground AM-AGC/FM-AFC 21 AGC/AFC capacitor pin RIPPLE 22 ripple capacitor pin AM-RFI 23 parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF) RFGND 24 FM-RF ground March 1994 4 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T handbook, halfpage handbook, halfpage FM-RFI 1 24 RFGND FM-RFI 1 24 RFGND AM-IFI 2 23 AM-RFI AM-IFI 2 23 AM-RFI AM-MIXER 3 22 RIPPLE AM-MIXER 3 22 RIPPLE FM-MIXER 4 21 AM-AGC/FM-AFC FM-MIXER 4 21 AM-AGC/FM-AFC VSTABA 5 20 FM-RFO VSTABA 5 20 FM-RFO FM-IF1I 6 19 SUBGND FM-IF1I 6 TDA5710 19 SUBGND TDA5710T AM-IF2I/O 7 18 FM-OSC AM-IF2I/O 7 18 FM-OSC FM-IF1O 8 17 AM-OSC FM-IF1O 8 17 AM-OSC VSTABB 9 16 VP VSTABB 9 16 VP 15 IND FM-IF2I 10 IFGND 11 14 AM/FM FM-DEM 12 15 IND FM-IF2I 10 IFGND 11 13 AF 14 AM/FM FM-DEM 12 13 AF MGE105 MGE104 Fig.2 Pin configuration TEA5710. Fig.3 Pin configuration TEA5710T. FUNCTIONAL DESCRIPTION The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage can go down temporarily to 1.8 V without any loss in performance. The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength dependent indicator output and is designed for distributed selectivity. The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large signals it lowers the input impedance. The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT. The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator. March 1994 5 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER MIN. MAX. UNIT VP positive supply voltage 0 12 V Tstg storage temperature range −55 +150 °C Tamb operating ambient temperature range −15 +60 °C Tj junction temperature range −15 +150 °C THERMAL RESISTANCE SYMBOL PARAMETER Rth j-a VALUE UNIT from junction to ambient for SDIL version TEA5710 69 K/W for SO24L version TEA5710T 76 K/W CIRCUIT DESIGN DATA DC PIN VOLTAGE (V) PIN NO. 1 PIN SYMBOL FM-RFI EQUIVALENT CIRCUIT AM FM − 0.73 220 Ω 1 24 20 MGE114 5 3 kΩ 2 AM-IF1I input 1.4 1.4 2 11 March 1994 6 MGE115 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 3 3 AM-MIXER output 1.4 5 1.4 MGE116 4 FM-MIXER output − 1.0 4 680 Ω MGE117 16 5 VSTABA 1.4 1.4 22 5 MGE118 5 6 FM-IFI input − 2.7 kΩ 0.73 11 March 1994 120 Ω 6 7 MGE119 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 9 7 AM-IF2I/O input/output 7 1.4 1.4 11 MGE120 9 8 FM-IF1O output − 0.69 8 560 Ω MGE121 16 9 VSTABB 1.4 1.4 22 9 MGE122 9 10 FM-IF2I input − 2.2 kΩ 0.73 11 11 March 1994 IFGND 180 Ω 10 0 0 8 MGE123 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 180 Ω 12 12 FM-DEM − 910 Ω 1.0 11 13 AF output 0.6 0.7 MGE124 13 25 kΩ 5 kΩ 11 14 AM/FM switch 1.3 0 MGE125 14 MGE126 15 15 IND 3.0 3.0 11 16 VP 3.0 3.0 17 AM-OSC 0 0 MGE127 17 19 March 1994 9 MGE128 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 0 0 18 18 FM-OSC 10 kΩ 21 19 MGE129 19 SUBGND 0 0 20 FM-RFO 0 0 220 Ω 1 24 20 MGE114 21 21 AM-AGC/ FM-AFC 0.1 0.7 11 MGE130 March 1994 10 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL EQUIVALENT CIRCUIT AM FM 16 22 22 RIPPLE 2.1 2.1 11 23 AM-RFI 0 MGE131 0 19 23 24 RFGND 0 MGE132 220 Ω 0 1 24 20 MGE114 March 1994 11 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T AM CHARACTERISTICS fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IP supply current no input signal 5.6 7.5 9.9 mA Ci input capacitance V21 = 0.2 V − 3 − pF Gc front-end conversion gain V21 = 0.2 V 1.8 3.3 5.0 Vin1 RF sensitivity S/N = 26 dB 40 55 70 µV Vin2 IF sensitivity V13 = 30 mV; 0.13 0.2 0.45 mV 36 45 70 mV S1 in position A V13 AF output voltage Vin2 = 3.16 mV; S1 in position A THD total harmonic distortion Vin1 = 1 mV − 0.8 2.0 % Vin1 large signal handling m = 0.8; 150 300 − mV 2 3.5 6 mA − 0 10 µA THD ≤ 8% IIND indicator current Vin2 = 100 mV; S1 in position A IINDOFF indicator OFF current Vin2 = 0 V; S1 in position A FM CHARACTERISTICS fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IP supply current no input signal 7.3 9.0 11.2 mA Vin3 RF limiting sensitivity V13 = −3 dB 0.4 1.2 3.8 µV Vin3 RF sensitivity S/N = 26 dB 1.0 2.0 3.8 µV V6/Vin3 front-end voltage gain Vin3 ≤ 1 mV; including ceramic filter K1 12 18 22 dB Vin4 IF sensitivity S2 in position B; V13 = −3 dB − 20 30 µV V13 AF output voltage Vin3 = 1 mV 47 58 69 mV THD total harmonic distortion Vin3 = 1 mV; ∆f = 22.5 kHz − 0.3 0.8 % Vin3 large signal handling THD ≤ 5% − 500 − mV IIND indicator current Vin4 = 100 mV; S2 in position B 2 3.5 6 mA IINDOFF indicator OFF current Vin4 = 0 V; S2 in position B − 0 10 µA March 1994 12 March 1994 13 (50 Ω) Vin2 220nF 560 Ω 27 Ω 6.8 Ω 50 Ω A S1 to pin 5 3 kΩ 91 Ω 1 nF 1 24 680 pF B 2 23 L5 10.7 MHz 3 22 L2 100 µF 5 20 6 50 Ω 330 Ω A S2 18 FM-OSC B L6 7 TEA5710 TEA5710T 19 L3 Fig.4 Test circuit. Vin4 K1 10 µF (50 Ω) Rg 4 21 FM-RF 18 pF 8 17 K2 10 nF 9 16 22 pF VP 10 15 CQS54 L4 FM 11 14 AM AM-OSC K3 MGE108 12 13 10 nF 8.2 pF AF Vp AM/FM radio receiver circuit 468 kHz Rg (50 Ω) Rg Vin3 (50 Ω) 43 Ω L8 40 µH handbook, full pagewidth 100 MHz 1 MHz Rg Vin1 Philips Semiconductors Product specification TEA5710; TEA5710T March 1994 14 CO L7 60 nH 4 L5 21 4 22 3 2 3 1 Cb 20 pF 5 20 CTb 8 pF K1 SFE10.7MS3 C3 10 µF FM-RFI C2 100 µF L2 1 2 L3 1 2 18 FM-OSC 6 L6 3 1 2 7 TEA5710 TEA5710T 19 C6 18 pF Cc 20 pF 8 17 9 16 1 K2 VP LED CQS54 10 15 VP L4 3 SFE10.7MS2 C4 10 nF CTc 8 pF C7 22 pF 11 14 AM C5 10 nF 12 13 CTd 8 pF K3 CDA10.7MC40 FM AM-OSC Cd 80 pF AF C10 100 µF C8 8.2 pF P1 4.7 kΩ C9 100 nF 1 8 ON OFF 3V 6 R2 10 Ω 2 3 TDA7050T 7 R1 10 Ω HP 32 Ω C11 100 µF MGE107 4 5 AM/FM radio receiver circuit Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T. 22 pF 2 1 6 23 CTa 8 pF 24 C1 4.7 nF AM-RFI Ca 140 pF handbook, full pagewidth L1 2 1 Philips Semiconductors Product specification TEA5710; TEA5710T APPLICATION INFORMATION Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T handbook, full pagewidth MGE109 Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5. March 1994 15 Philips Semiconductors Product specification AM/FM radio receiver circuit handbook, full pagewidth TEA5710; TEA5710T ANT GND 100MHz C1 C12 C2 560 27 91 4.7 R2 1 L5 C11 L2 K1 ANT C7 R3 L6 L1 C3 TEA5710 HP PLUG C4 1MHz 6.8 43 40 µH 680 C8 OSC C5 K2 C6 K3 A M F M L3 C9 L4 P1 <FM AM> LED 1.5 V C10 GND 1.5 V AF MGE110 Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5. March 1994 16 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T Components for Figs 4 and 5 Coils L1 AM-AERIAL ferroceptor length = 6 cm L1-2 = 625 µH N1-2 = 105 turns L2 FM-RF L1-2 = 66 nH N1-2 = 2.5 turns unloaded Q = 150 TOKO type S18 TOKO no. 301SS-0200 L3 FM-OSC L1-2 = 40 nH N1-2 = 1.5 turns unloaded Q = 150 TOKO type S18 TOKO no. 301SS-0100 L4 AM-OSC L1-3 = 270 µH N1-2 = 18 N2-3 = 70 3 unloaded Q = 100 2 wire diameter 0.07 mm 1 L4 S TOKO type 7P MGE133 material TOKO 7BRS L5 AM-IF1 L1-3 = 625 µH N1-2 = 17 turns N2-3 = 141 turns S 3 4 N4-6 = 10 turns 2 C1-3 = 180 pF 1 unloaded Q = 90 6 L5 S MGE134 wire diameter 0.07 mm TOKO type 7P material TOKO 7MCS L6 AM-IF2 L1-3 = 625 µH N1-2 = 28 turns N2-3 = 130 turns 3 C1-3 = 180 pF 2 L6 unloaded Q = 90 1 wire diameter 0.07 mm S TOKO type 7P material TOKO 7MCS March 1994 17 MGE135 Philips Semiconductors Product specification AM/FM radio receiver circuit L7 FM-AERIAL TEA5710; TEA5710T print-coil L1-2 = 60 nH N1-2 = 2.5 turns L8 AM-RF test circuit only: L1-3 = 40 µH N1-3 = 34 turns 3 unloaded Q = 85 L8 wire diameter 0.09 mm 1 TOKO type 7P S MGE136 material TOKO 7BRS Ceramic filters K1 FM-IF1 Murata SFE 10.7 MS 3 K2 FM-IF2 Murata SFE 10.7 MS 2 K3 FM-DET Murata CDA 10.7 MC 40 Capacitors C1 VARICON AM: 140/82 pF FM: 2 × 20 pF trimmer: 4 × 8 pF TOKO type no. HU-22124 Application notes 1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin. 2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply voltage (pin 16) or connect the pin IND to ground. 3. For an example of PC-board layout: see Figs 6 and 7. March 1994 18 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T MGE111 0 handbook, full pagewidth 7 level (mA) THD (%) 6 signal m = 0.3 VAF (dB) 0 dB = 45 mV −10 −20 5 level noise m=0 −30 4 −40 3 −50 2 −60 1 THD m = 0.3 −70 10−1 Fig.8 1 10 102 103 104 105 Vin1 (µV) 0 106 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of RF input voltage (Vin1; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V. March 1994 19 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T MGE112 0 handbook, full pagewidth VAF (dB) 0 dB = 45 mV −10 signal m = 0.3 7 level (mA) THD (%) 6 noise m=0 5 −20 −30 level 4 −40 3 −50 2 −60 1 THD m = 0.3 −70 1 Fig.9 10 102 103 104 105 106 field-strength (µV) 0 107 Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with VP = 3 V. March 1994 20 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T MGE113 0 handbook, full pagewidth 7 ind (mA) THD (%) 6 signal VAF (dB) 0 dB = 65 mV −10 −20 5 −30 4 ind noise −40 3 −50 2 THD 22.5 kHz −60 −70 10−1 1 1 10 102 103 104 105 Vin3 (µV) 0 106 Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF input voltage (Vin3; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V. March 1994 21 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T PACKAGE OUTLINES SDIP24: plastic shrink dual in-line package; 24 leads (400 mil) SOT234-1 ME seating plane D A2 A A1 L c e Z b1 (e 1) w M MH b 13 24 pin 1 index E 1 12 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.8 1.3 0.8 0.53 0.40 0.32 0.23 22.3 21.4 9.1 8.7 1.778 10.16 3.2 2.8 10.7 10.2 12.2 10.5 0.18 1.6 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-02-04 SOT234-1 March 1994 EUROPEAN PROJECTION 22 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 D E A X c HE y v M A Z 13 24 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 12 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.61 0.60 0.30 0.29 0.050 0.42 0.39 inches 0.043 0.055 0.016 0.043 0.039 0.01 0.01 Z (1) 0.9 0.4 0.035 0.004 0.016 θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT137-1 075E05 MS-013AD March 1994 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-01-24 23 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. WAVE SOLDERING This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. SDIP SOLDERING BY DIPPING OR BY WAVE • The longitudinal axis of the package footprint must be parallel to the solder flow. The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. REPAIRING SOLDERED JOINTS A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. March 1994 24 Philips Semiconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1994 25