PHILIPS HEF4511BTD

INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4511B
MSI
BCD to 7-segment
latch/decoder/driver
Product specification
File under Integrated Circuits, IC04
January 1995
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
When EL is LOW, the state of the segment outputs (Oa to
Og) is determined by the data on DA to DD.
When EL goes HIGH, the last data present on DA to
DD are stored in the latches and the segment outputs
remain stable. When LT is LOW, all the segment outputs
are HIGH independent of all other input conditions. With
LT HIGH, a LOW on BI forces all segment outputs LOW.
The inputs LT and BI do not affect the latch circuit.
DESCRIPTION
The HEF4511B is a BCD to 7-segment
latch/decoder/driver with four address inputs (DA to DD),
an active LOW latch enable input (EL), an active LOW
ripple blanking input (BI), an active LOW lamp test input
(LT), and seven active HIGH n-p-n bipolar transistor
segment outputs (Oa to Og).
Fig.2 Pinning diagram.
HEF4511BP(N):
16-lead DIL; plastic (SOT38-1)
HEF4511BD(F):
16-lead DIL; ceramic (cerdip) (SOT74)
HEF4511BT(D):
16-lead SO; plastic (SOT109-1)
( ): Package Designator North America
Fig.1 Functional diagram.
PINNING
DA to DD
address (data) inputs
EL
latch enable input (active LOW)
BI
ripple blanking input (active LOW)
LT
lamp test input (active LOW)
Oa to Og
segment outputs
Fig.4
Segment
designation.
FAMILY DATA, IDD LIMITS category MSI
See Family Specifications
Fig.3 Schematic diagram of output stage.
January 1995
2
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Philips Semiconductors
3
BCD to 7-segment latch/decoder/driver
January 1995
Product specification
HEF4511B
MSI
Fig.5 Logic diagram; for one latch see Fig.6.
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
Fig.6 Logic diagram (one latch); see also Fig.5.
FUNCTION TABLE
INPUTS
LT
DD
OUTPUTS
EL
BI
DC
X
X
L
X
X
X
L
H
X
X
L
H
H
L
L
L
H
H
L
L
H
H
L
L
H
H
L
H
L
L
DB
DA
Oa
Ob
Oc
Od
Oe
Of
Og
X
X
H
H
H
H
H
H
H
8
X
X
L
L
L
L
L
L
L
blank
L
L
H
H
H
H
H
H
L
0
L
L
H
L
H
H
L
L
L
L
1
L
H
L
H
H
L
H
H
L
H
2
L
L
H
H
H
H
H
H
L
L
H
3
H
L
H
L
L
L
H
H
L
L
H
H
4
H
H
L
H
L
H
H
L
H
H
L
H
H
5
H
H
L
H
H
L
L
L
H
H
H
H
H
6
L
H
H
L
H
H
H
H
H
H
L
L
L
L
7
L
H
H
H
L
L
L
H
H
H
H
H
H
H
8
L
H
H
H
L
L
H
H
H
H
L
L
H
H
9
L
H
H
H
L
H
L
L
L
L
L
L
L
L
blank
L
H
H
H
L
H
H
L
L
L
L
L
L
L
blank
L
H
H
H
H
L
L
L
L
L
L
L
L
L
blank
L
H
H
H
H
L
H
L
L
L
L
L
L
L
blank
L
H
H
H
H
H
L
L
L
L
L
L
L
L
blank
L
H
H
H
H
H
H
L
L
L
L
L
L
L
blank
H
H
H
X
X
X
X
*
Note
1. H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
X = state is immaterial
* Depends upon the BCD code applied during the LOW to HIGH transition of EL.
January 1995
4
DISPLAY
*
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
Fig.7 Display.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134).
−IOH
Output (source) current HIGH
max.
25
mA
For other RATINGS see Family Specifications.
Note
1. A destructive high current mode may occur if VI and VO are not constrained to the range VSS ≤ VI or VO ≤ VDD.
January 1995
5
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
DC CHARACTERISTICS
VSS = 0 V
Tamb (°C)
HEF
VDD
V
IOH
mA
−40
SYMBOL
MIN.
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
January 1995
5
0
10
0
15
0
5
5
10
5
15
5
5
10
10
10
15
10
5
15
10
15
15
15
5
20
10
20
15
20
5
25
10
25
15
25
4,10
VOH
MAX.
+ 25
MIN.
4,10
4,40
MIN.
4,10
MAX.
V
9,10
9,10
9,40
9,10
V
14,10
14,40
14,10
V
3,60
3,60
4,20
V
9,20
V
14,20
V
4,05
3,30
V
8,75
8,75
9,10
8,45
V
13,75
13,75
14,10
13,45
V
VOH
VOH
TYP.
14,10
VOH
VOH
+ 85
4,00
V
9,00
V
14,00
V
2,80
2,80
3,80
2,50
V
8,10
8,10
9,00
7,80
V
13,10
13,10
14,00
12,80
VOH
6
V
3,70
V
8,90
V
14,00
V
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
Tamb (°C)
HEC
VDD
V
IOH
mA
−55
SYMBOL
MIN.
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
Output voltage
HIGH
5
0
10
0
15
0
5
5
10
5
15
5
5
10
10
10
15
10
5
15
10
15
15
15
5
20
10
20
15
20
5
25
10
25
15
25
VOH
MAX.
+ 25
MIN.
MIN.
4,40
4,10
V
9,10
9,10
9,90
9,10
V
14,10
14,10
14,40
14,40
V
9,30
V
14,30
V
3,60
3,60
4,25
3,20
V
8,75
8,75
9,25
8,35
V
13,75
13,75
14,25
13,35
V
4,20
V
9,20
V
14,20
V
2,80
2,80
4,20
2,30
V
8,10
8,10
9,20
7,60
V
13,10
13,10
14,20
12,60
V
VOH
4,15
V
9,20
V
14,20
V
TYPICAL FORMULA FOR P (µW)
5
1 000 fi + ∑ (foCL) × VDD2
where
dissipation per
10
4 000 fi + ∑ (foCL) × VDD
fi = input freq. (MHz)
package (P)
15
10 000 fi + ∑ (foCL) × VDD2
Dynamic power
2
fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
V
4,30
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; input transition times ≤ 20 ns
VDD
V
MAX.
4,10
VOH
VOH
TYP.
4,10
VOH
VOH
+ 125
7
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL
MIN.
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
Dn → On
HIGH to LOW
5
10
tPHL
15
5
LOW to HIGH
10
tPLH
15
EL → On
HIGH to LOW
5
10
tPHL
15
5
LOW to HIGH
10
tPLH
15
BI → On
HIGH to LOW
BI → On
LOW to HIGH
LT → On
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
LOW to HIGH
310 ns
128 ns
+
(0,55 ns/pF) CL
60
120 ns
49 ns
+
(0,23 ns/pF) CL
40
80 ns
32 ns
+
(0,16 ns/pF) CL
135
270 ns
108 ns
+
(0,55 ns/pF) CL
55
110 ns
44 ns
+
(0,23 ns/pF) CL
40
80 ns
32 ns
+
(0,16 ns/pF) CL
160
320 ns
133 ns
+
(0,55 ns/pF) CL
60
120 ns
49 ns
+
(0,23 ns/pF) CL
45
90 ns
37 ns
+
(0,16 ns/pF) CL
160
320 ns
133 ns
+
(0,55 ns/pF) CL
70
140 ns
59 ns
+
(0,23 ns/pF) CL
50
100 ns
42 ns
+
(0,16 ns/pF) CL
120
240 ns
93 ns
+
(0,55 ns/pF) CL
50
100 ns
39 ns
+
(0,23 ns/pF) CL
15
35
70 ns
27 ns
+
(0,16 ns/pF) CL
5
105
210 ns
78 ns
+
(0,55 ns/pF) CL
5
10
tPHL
40
80 ns
29 ns
+
(0,23 ns/pF) CL
15
30
60 ns
22 ns
+
(0,16 ns/pF) CL
5
80
160 ns
52 ns
+
(0,55 ns/pF) CL
10
tPLH
30
60 ns
19 ns
+
(0,23 ns/pF) CL
15
20
40 ns
12 ns
+
(0,16 ns/pF) CL
5
60
120 ns
33 ns
+
(0,55 ns/pF) CL
10
tPHL
30
60 ns
19 ns
+
(0,23 ns/pF) CL
15
25
50 ns
17 ns
+
(0,16 ns/pF) CL
5
60
120 ns
10 ns
+
(1,0 ns/pF) CL
10
tPLH
30
60 ns
9 ns
+
(0,42 ns/pF) CL
15
20
40 ns
6 ns
+
(0,28 ns/pF) CL
5
25
50 ns
20 ns
+
(1,0 na/pF) CL
16
32 ns
13 ns
+
(0,06 ns/pF) CL
13
26 ns
10 ns
+
(0,06 ns/pF) CL
10
10
tTHL
tTLH
15
January 1995
155
8
Philips Semiconductors
Product specification
HEF4511B
MSI
BCD to 7-segment latch/decoder/driver
VDD
V
Minimum EL
SYMBOL
5
pulse width; LOW
10
tWELL
MIN.
TYP.
TYPICAL EXTRAPOLATION
FORMULA
MAX.
80
40
ns
40
20
ns
15
35
17
ns
Set-up time
5
50
25
ns
Dn → EL
10
25
12
ns
15
20
9
ns
5
60
30
ns
30
15
ns
25
12
ns
Hold-time
Dn → EL
10
15
tsu
thold
see also waveforms
Fig.8
Conditions:
DD = LOW
DA = DB = BI = LT = HIGH
Fig.8 Waveforms showing minimum EL pulse width, set-up and hold time for DC to EL.
January 1995
9
Philips Semiconductors
Product specification
BCD to 7-segment latch/decoder/driver
APPLICATION INFORMATION
Some examples of applications for the HEF4511B are:
• Driving LED displays.
• Driving incandescent displays.
• Driving fluorescent displays.
• Driving LCD displays.
• Driving gas discharge displays.
Fig.9 Connection to common cathode LED display readout.
Fig.10 Connection to common anode LED display readout.
January 1995
10
HEF4511B
MSI
Philips Semiconductors
Product specification
BCD to 7-segment latch/decoder/driver
HEF4511B
MSI
(1) A filament pre-warm resistor is recommended to
reduce filament thermal shock and increase the
effective cold resistance of the filament.
Fig.11 Connection to incandescent display readout.
Fig.12 Connection to fluorescent display readout.
Fig.13 Connection to gas discharge display
readout.
Fig.14 Connection to liquid crystal (LCD) display
readout. Direct d.c. drive of LCDs not
recommended for life of LCD readouts.
January 1995
11