PHILIPS BAY80

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAY80
General purpose diode
Product specification
Supersedes data of April 1996
1996 Sep 18
Philips Semiconductors
Product specification
General purpose diode
BAY80
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAY80 is a switching diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
• High switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 120 V
• Repetitive peak reverse voltage:
max. 150 V
• Repetitive peak forward current:
max. 625 mA.
handbook, halfpage
k
a
MAM246
APPLICATIONS
• Switching and general purposes in
industrial equipment e.g.
oscilloscopes, digital voltmeters
and video output stages in colour
television.
The diode is type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
150
V
VR
continuous reverse voltage
−
120
V
IF
continuous forward current
−
250
mA
IFRM
repetitive peak forward current
−
625
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
9
A
t = 100 µs
−
3
A
t=1s
−
1
A
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ptot
total power dissipation
−
400
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+175
°C
Tj
junction temperature
−
175
°C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 18
2
mW
Philips Semiconductors
Product specification
General purpose diode
BAY80
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 0.1 mA
450
550
mV
IF = 10 mA
650
800
mV
IF = 50 mA
730
920
mV
IF = 100 mA
780
1000
mV
IF = 150 mA
−
1.07
V
see Fig.5
VR = 120 V
−
100
nA
VR = 120 V; Tj = 150 °C
−
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
6
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
measured at IR = 3 mA; see Fig.7
−
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
BAY80
GRAPHICAL DATA
MBG449
300
MBG460
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
100
200
0
(2)
(3)
0
0
100
Tamb (oC)
200
0
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on a FR4 printed-circuit board; lead length 10 mm.
Fig.2
(1)
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 18
4
104
Philips Semiconductors
Product specification
General purpose diode
BAY80
MGD009
103
handbook, halfpage
MGD005
1.6
handbook, halfpage
IR
(µA)
10
Cd
(pF)
2
1.4
10
1.2
1
1.0
10−1
10−2
0
100
Tj (oC)
0.8
200
0
VR = 120 V.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
handbook, full pagewidth
tr
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R = 50 Ω
i
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
1996 Sep 18
t rr
5
output signal
Philips Semiconductors
Product specification
General purpose diode
BAY80
PACKAGE OUTLINE
ook, full pagewidth
0.56
max
1.85
max
25.4 min
4.25
max
25.4 min
MLA428 - 1
Dimensions in mm.
Fig.8 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
6