PHILIPS BAV23

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D070
BAV23
General purpose double diode
Product specification
Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors
Product specification
General purpose double diode
BAV23
FEATURES
DESCRIPTION
• Small plastic SMD package
The BAV23 consists of two general
purpose diodes fabricated in planar
technology, and encapsulated in the
small plastic SMD SOT143 package.
The diodes are not connected.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 200 V
PINNING
• Repetitive peak reverse voltage:
max. 250 V
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
anode (a2)
4
anode (a1)
• Repetitive peak forward current:
max. 625 mA.
handbook, halfpage
4
3
APPLICATIONS
4
3
1
2
• General purpose where high
breakdown voltages are required.
1
Top view
2
MAM059
Marking code: L30.
Fig.1 Simplified outline (SOT143) and symbol.
1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose double diode
BAV23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
UNIT
VRRM
repetitive peak reverse voltage
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
VR
continuous reverse voltage
series connection
−
400
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
−
225
mA
double diode loaded; see Fig.2;
note 1
−
125
mA
−
625
mA
t = 1 µs
−
9
A
t = 100 µs
−
3
A
t = 10 ms
−
1.7
A
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
series connection
−
250
V
500
V
200
V
square wave; Tj = 25 °C prior to
surge; see Fig.4
−
250
storage temperature
−65
+150
°C
junction temperature
−
150
°C
Ptot
total power dissipation
Tstg
Tj
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
3
mW
Philips Semiconductors
Product specification
General purpose double diode
BAV23
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
VF
IR
IR
Cd
trr
PARAMETER
forward voltage
forward voltage
reverse current
reverse current
diode capacitance
reverse recovery time
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 100 mA
−
1.0
V
IF = 200 mA
−
1.25
V
IF = 100 mA
−
2.0
V
IF = 200 mA
−
2.5
V
series connection; see Fig.3
see Fig.5
VR = 200 V
−
100
nA
VR = 200 V; Tj = 150 °C
−
100
µA
−
series connection
VR = 400 V
−
100
nA
VR = 400 V; Tj = 150 °C
−
100
µA
f = 1 MHz; VR = 0; see Fig.6
−
5
pF
series connection; f = 1 MHz;
VR = 0; see Fig.6
−
2.5
pF
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
measured at IR = 3 mA; see Fig.7
−
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17
4
VALUE
UNIT
360
K/W
500
K/W
Philips Semiconductors
Product specification
General purpose double diode
BAV23
GRAPHICAL DATA
MBD033
300
MBG384
600
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
400
single diode loaded
double diode loaded
200
100
0
0
0
100
T amb ( oC)
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 17
5
104
Philips Semiconductors
Product specification
General purpose double diode
BAV23
MBG381
2
10halfpage
handbook,
Cd
(pF)
IR
(µA)
0.8
10
(1)
1
10
MBG447
1.0
handbook, halfpage
(2)
0.6
1
0.4
10 2
0
100
Tj (oC)
0.2
0
200
2
(1) VR = 200 V; maximum values.
(2) VR = 200 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
handbook, full pagewidth
tr
4
6
VR (V)
8
Diode capacitance as a function of reverse
voltage; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
1996 Sep 17
t rr
6
output signal
Philips Semiconductors
Product specification
General purpose double diode
BAV23
PACKAGE OUTLINE
handbook, full pagewidth
0.75
0.60
3.0
2.8
0.150
0.090
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
1.4
1.2
2.5
max
o
10
max
1
1.1
max
o
30
max
2
0
0.1
0.88
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.8 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 17
7