ETC BAS28/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D070
BAS28
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 10
Philips Semiconductors
Product specification
High-speed double diode
BAS28
FEATURES
DESCRIPTION
• Small plastic SMD package
The BAS28 consists of two
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
anode (a2)
4
anode (a1)
• Repetitive peak forward current:
max. 500 mA .
handbook, halfpage
4
3
APPLICATIONS
4
3
1
2
• High-speed switching in e.g.
surface mounted circuits.
1
2
Top view
MAM059
Marking code: JTp.
Fig.1 Simplified outline (SOT143) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
−
215
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
−
250
storage temperature
−65
+150
°C
junction temperature
−
150
°C
Ptot
total power dissipation
Tstg
Tj
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
2
mW
Philips Semiconductors
Product specification
High-speed double diode
BAS28
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 1 mA
−
715
mV
IF = 10 mA
−
855
mV
IF = 50 mA
−
1
V
IF = 150 mA
−
1.25
V
see Fig.5
−
VR = 25 V
30
nA
VR = 75 V
−
1
µA
VR = 25 V; Tj = 150 °C
−
30
µA
VR = 75 V; Tj = 150 °C
−
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
3
VALUE
UNIT
360
K/W
500
K/W
Philips Semiconductors
Product specification
High-speed double diode
BAS28
GRAPHICAL DATA
MSA562 -1
MBG382
300
250
handbook, halfpage
IF
(mA)
IF
(mA)
200
(1)
(2)
(3)
200
150
100
100
50
0
0
0
50
100
150
200
Tamb (oC)
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function
of forward voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
4
104
Philips Semiconductors
Product specification
High-speed double diode
BAS28
MGA884
105
Cd
(pF)
IR
(nA)
10
V R = 75 V
4
max
103
10
MBG446
0.8
handbook, halfpage
0.6
75 V
0.4
25 V
2
0.2
typ
typ
10
0
0
100
T j ( o C)
0
200
4
8
12
VR (V)
16
f = 1 MHz; Tj = 25 °C.
Fig.5
1996 Sep 10
Reverse current as a function of
junction temperature.
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAS28
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 10
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAS28
PACKAGE OUTLINE
handbook, full pagewidth
0.75
0.60
3.0
2.8
0.150
0.090
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
1.4
1.2
2.5
max
o
10
max
1
1.1
max
o
30
max
2
0
0.1
0.88
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10
7