DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAS32L High-speed diode Product specification Supersedes data of April 1996 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS32L FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V k handbook, 4 columns • Repetitive peak forward current: max. 450 mA. APPLICATIONS a MAM061 Cathode indicated by black band. • High-speed switching Fig.1 Simplified outline (SOD80C) and symbol. • Fast logic applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 − 500 storage temperature −65 +200 °C junction temperature − 200 °C Ptot total power dissipation Tstg Tj Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 2 mW Philips Semiconductors Product specification High-speed diode BAS32L ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS reverse current MAX. UNIT see Fig.3 IF = 5 mA IR MIN. 750 mV IF = 100 mA 620 − 1000 mV IF = 100 mA; Tj = 100 °C − 930 mV VR = 20 V − 25 nA VR = 75 V − 5 µA VR = 20 V; Tj = 150 °C − 50 µA VR = 75 V; Tj = 150 °C − 100 µA see Fig.5 V(BR)R reverse breakdown voltage IR = 100 µA 100 − V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 2.5 V − THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 3 VALUE UNIT 300 K/W 350 K/W Philips Semiconductors Product specification High-speed diode BAS32L GRAPHICAL DATA MBG451 300 MBG464 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) 100 (3) 200 0 0 0 100 Tamb (oC) 200 0 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 4 104 Philips Semiconductors Product specification High-speed diode BAS32L MGD006 103 handbook, halfpage MGD004 1.2 handbook, halfpage IR (µA) 10 Cd (pF) 2 1.0 (1) (2) (3) 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. Fig.5 1996 Sep 10 10 VR (V) 20 f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode BAS32L handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 6 t tp output signal Philips Semiconductors Product specification High-speed diode BAS32L PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 3.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 10 7