DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION 1 Code: F689 1 emitter 2 base 3 collector 2 3 MSB034 Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 25 V VCEO collector-emitter voltage open base − − 15 V IC DC collector current − − 25 mA Ptot total power dissipation up to Tamb = 60 °C − − 360 mW hFE DC current gain IC = 2 mA; VCE = 5 V; Tj = 25 °C 20 − − IC = 20 mA; VCE = 5 V; Tj = 25 °C 35 − − IC = 15 mA; VCE = 5 V; f = 500 MHz − 1.8 − MIN. MAX. UNIT fT transition frequency GHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VCER collector-emitter voltage RBE ≤ 50 Ω − 25 V VEBO emitter-base voltage open collector − 3.5 V IC DC collector current − 25 mA ICM peak collector current tp < 1 µs − 50 mA Ptot total power dissipation up to Tamb= 60 °C − 360 mW Tstg storage temperature −55 150 °C Tj junction temperature − 150 °C September 1995 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF689K THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air THERMAL RESISTANCE 250 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 15 V − − 50 nA IEBO emitter cut-off current IC = 0; VEB = 2 V − − 1 µA VCE sat collector-emitter saturation voltage IC = 25 mA; IB = 1.25 mA − − 1.0 V VBE sat base-emitter saturation voltage IC = 25 mA; IB = 1.25 mA − − 1.0 V hFE DC current gain IC = 2 mA; VCE = 5 V 20 − − IC = 20 mA; VCE = 5 V 35 − − fT transition frequency IC = 15 mA; VCE = 5 V; f = 500 MHz − 1.8 − GHz Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz; Tamb = 25 °C − 1.1 − pF Gp power gain IC = 2 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; ZS = 60 Ω; RL = 2 kΩ − 16 − dB IC = 2 mA; VCE = 5 V; f = 200 MHz; − Tamb = 25 °C; ZS = 60 Ω; RL = 920 Ω 16 − dB F noise figure September 1995 IC = 2 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 °C; ZS = 60 Ω − 4 − dB IC = 2 mA; VCE = 5 V; f = 200 MHz; Tamb = 25 °C; ZS = 60 Ω − 3 − dB 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF689K PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant September 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-04-14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF689K DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 5