DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES • Specially designed for low loss RF switching up to 1 GHz. handbook, 2 columns 4 3 APPLICATIONS • Various RF switching applications such as: 1 – Passive loop through for VCR tuner 2 Top view – Transceiver switching. MSB014 Marking code: NGp. DESCRIPTION Fig.1 Simplified outline (SOT143B). These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. handbook, 2 columns 3 4 2 PINNING PIN Top view DESCRIPTION 1 FET gate; diode anode 2 diode cathode 3 source; note 1 4 drain; note 1 1 MSB035 Marking code: NHp. Fig.2 Simplified outline (SOT143R). Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA SYMBOL PARAMETER s21(on)2 s21(off)2 losses (on-state) RDSon VGSoff CONDITIONS MIN. TYP. − MAX. UNIT − isolation (off-state) RS = RL = 50 Ω; f ≤ 1 GHz 30 − − dB drain-source on-resistance VCS = 0; ID = 1 mA − 12 20 Ω pinch-off voltage ID = 20 µA; VDS = 1 V − −3 −4 V 2 dB CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Nov 18 2 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT FET VDS drain-source voltage − 3 V VSD source-drain voltage − 3 V VDG drain-gate voltage − 7 V VSG source-gate voltage − 7 V ID drain current − 10 mA VR continuous reverse voltage − 35 V IF continuous forward current − 100 mA Diode FET and diode Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 250 K/W Note 1. Soldering point of FET gate and diode anode lead. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT FET V(BR)GSS gate-source breakdown voltage VDS = 0; IGS = 0.1 mA 7 − − V VGSoff gate-source pinch-off voltage VDS = 1 V; ID = 20 µA − −3 −4 V IDSX drain-source leakage current VGS = −5 V; VDS = 2 V − − 10 µA IGSS gate cut-off current VGS = −5 V; VDS = 0 − − 100 nA RDSon drain-source on-state resistance VGS = 0; ID = 1 mA − 12 20 Ω VF forward voltage IF = 10 mA − − 1 V IR reverse current VR = 25 V − − 50 nA VR = 20 V; Tamb = 75 °C − − 1 µA Diode 1999 Nov 18 3 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R DYNAMIC CHARACTERISTICS Common cathode; Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT FET and diode s21(on)2 losses (on-state) s21(off)2 isolation (off-state) VSC = VDC = 0; RS = RL = 50 Ω; IF = 0; note 1; f ≤ 1 GHz − − 2 dB VSC = VDC = 0; RS = RL = 50 Ω; IF = 0; f = 1 GHz − 1.3 − dB VSC = VDC = 0; RS = RL = 75 Ω; IF = 0; f ≤ 1 GHz − − 3 dB VSC = VDC = 5 V; RS = RL = 50 Ω; IF = 1 mA; f ≤ 1 GHz 30 − − dB VSC = VDC = 5 V; RS = RL = 50 Ω; IF = 1 mA; f = 1 GHz − 38 − dB VSC = VDC = 5 V; RS = RL = 75 Ω; IF = 1 mA; f ≤ 1 GHz 30 − − dB RDSon drain-source on-resistance VCS = 0; ID = 1 mA − 12 20 Ω Cic input capacitance; note 2 Coc output capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz − 1 − pF VSC = VDC = 0; IF = 0; f = 1 MHz − 0.65 0.9 pF VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz − 1 − pF VSC = VDC = 0; IF = 0; f = 1 MHz − 0.65 0.9 pF Diode Cd diode capacitance f = 1 MHz; VR = 0 − 1.1 − pF rD diode forward resistance IF = 2 mA; f = 100 MHz; note 3 − − 0.7 Ω Notes 1. IF = diode forward current. 2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc. 3. Guaranteed on AQL basis; inspection level S4, AQL 1.0. d s s d c g, a handbook, halfpage MBL027 g, a c SOT143B SOT143R Fig.3 Simplified diagram. 1999 Nov 18 4 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R MGS357 0 MGS358 0 handbook, halfpage handbook, halfpage |s |2 21(on) (dB) |s21(off)| 2 (dB) −1 −20 −2 −40 −3 −4 −60 0 400 800 f (MHz) 1200 0 400 800 f (MHz) 1200 VSC = VDC = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode forward current); Measured in test circuit (Fig.6). VSC = VDC = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode forward current); Measured in test circuit (Fig.6). Fig.4 Fig.5 Losses (on-state) as a function of frequency; typical values. V handbook, full pagewidth Isolation (off-state) as a function of frequency; typical values. 1 nF 100 kΩ 47 kΩ BF1108/BF1108R 50 Ω input 1 nF 1 nF 50 Ω output 4.7 kΩ 100 kΩ V 1 nF On-state: V = 0 V. Off-state: V = 5 V. Fig.6 Test circuit. 1999 Nov 18 5 MBL028 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1999 Nov 18 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION SOT143R 1999 Nov 18 REFERENCES IEC JEDEC EIAJ SC-61B 7 EUROPEAN PROJECTION ISSUE DATE 97-03-10 99-09-13 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125004/03/pp12 Date of release: 1999 Nov 18 Document order number: 9397 750 06477