Philips Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristor in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. This thyristor has a high repetitive surge specification which makes it suitable for applications where high inrush currents or stall currents are likely to occur on a repetitive basis. PINNING - SOT428 PIN SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM ITRM cathode 2 anode 3 gate Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Repetitive peak on-state current PIN CONFIGURATION DESCRIPTION 1 PARAMETER UNIT 650 7.5 12 110 60 V A A A A SYMBOL tab a k 2 tab MAX. g anode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages half sine wave; - IT(AV) Average on-state current Tmb ≤ 103 ˚C IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10ms, τ = 3s, Tmb ≤ 45˚C, no. of surges = 100k t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs ITRM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MAX. 1 UNIT 650 V - 7.5 12 A A - 110 121 60 A A A - 61 50 A2s A/µs -40 - 2 5 5 5 0.5 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. March 2001 1 Rev 1.001 Philips Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to mounting base Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient - - 1.8 K/W - 75 - K/W Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 2 10 7 1.4 0.6 0.4 0.1 15 40 20 1.75 1.5 0.5 mA mA mA V V V mA MIN. TYP. MAX. UNIT 50 200 - 130 1000 2 - V/µs V/µs µs - 70 - µs DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω tgt Gate controlled turn-on time Circuit commutated turn-off time tq Ip = 60 A 10ms 3 s (Minimum) Fig.1. Repetitive surge conditions. IP=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive cycle T=3 seconds minimum. March 2001 2 Rev 1.001 Philips Semiconductors Product specification Thyristor High Repetitive Surge 15 BTH151S-650R Ptot / W Tmb(max) / C conduction angle degrees 30 60 90 120 180 10 form factor 120 98 100 time T Tj initial = 25 C max 1.9 2.2 107 2.8 ITSM IT a = 1.57 a 4 2.8 2.2 1.9 1.57 ITSM / A 80 4 60 116 5 40 20 0 0 1 2 3 4 5 IF(AV) / A 6 7 125 8 0 Fig.2. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 1 10 100 Number of half cycles at 50Hz 1 1000 Fig.5. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 25 ITSM / A IT(RMS) / A 20 15 dI T /dt limit 100 10 I TSM IT 5 time T Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.6. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. 15 10 IT(RMS) / A 1.6 VGT(Tj) VGT(25 C) 103 C 1.4 10 1.2 1 5 0.8 0.6 0 -50 0 50 Tmb / C 100 0.4 -50 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. March 2001 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.001 Philips Semiconductors Product specification Thyristor High Repetitive Surge 3 BTH151S-650R IGT(Tj) IGT(25 C) 30 IT / A Tj = 125 C Tj = 25 C 25 2.5 Vo = 1.06 V Rs = 0.0304 ohms 2 max 15 1.5 1 10 0.5 5 0 -50 0 50 Tj / C 100 0 150 IL(Tj) IL(25 C) 0 0.5 1 VT / V 1.5 2 Fig.11. Typical and maximum on-state characteristic. Fig.8. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 typ 20 10 BT145 2.5 Zth j-mb (K/W) 1 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 1ms 10ms tp / s 0.1s 1s 10s Fig.12. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.9. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms IH(Tj) IH(25 C) 10000 dVD/dt (V/us) 2.5 1000 2 RGK = 100 Ohms 1.5 100 1 gate open circuit 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.10. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. March 2001 0 Fig.13. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 1.001 Philips Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R MECHANICAL DATA Dimensions in mm seating plane Net Mass: 1.1 g 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.14. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.15. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". March 2001 5 Rev 1.001 Philips Semiconductors Product specification Thyristor High Repetitive Surge BTH151S-650R DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 2001 6 Rev 1.001