DISCRETE SEMICONDUCTORS DATA SHEET BF992; BF992R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF992; BF992R APPLICATIONS d handbook, halfpage • VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment. 4 3 g2 g1 DESCRIPTION 1 Depletion type field-effect transistor in a plastic micro-miniature SOT143 or SOT143R package with source and substrate interconnected. 2 s,b Top view The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. MAM039 Marking code: M92. Fig.1 Simplified outline (SOT143) and symbol; BF992. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. d handbook, halfpage 3 4 g2 g1 PINNING PIN SYMBOL 1 s,b 2 d DESCRIPTION source 2 1 drain 3 g2 gate 2 4 g1 gate 1 s,b Top view MAM040 Marking code: M52. Fig.2 Simplified outline (SOT143R) and symbol; BF992R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 20 V − 40 mA − 200 mW 25 − mS f = 1 MHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V 4 − pF reverse transfer capacitance f = 1 MHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V 30 − fF F noise figure GS = 2 mS; ID = 15 mA; VDS = 10 V; VG2-S = 4 V; f = 200 MHz 1.2 − dB Tj operating junction temperature − 150 °C VDS drain-source voltage (DC) ID drain current (DC) Ptot total power dissipation Tamb = 60 °C Yfs forward transfer admittance f = 1 kHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V Cig1-s input capacitance at gate 1 Crs 1996 Jul 30 2 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF992; BF992R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 40 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C up to Tamb = 60 °C; see Fig.3; note 1 Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. MLA198 handbook, halfpage 200 (2) Ptot max (mW) (1) 100 0 0 100 200 Tamb (o C) (1) BF992. (2) BF992R. Fig.3 Power derating curves. 1996 Jul 30 3 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF992; BF992R THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT BF992 460 K/W BF992R 500 K/W thermal resistance from junction to ambient in free air note 1 Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-SS = ±10 mA 8 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-SS = ±10 mA 8 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 10 V; ID = 20 µA 0.2 1.3 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 10 V; ID = 20 µA 0.2 1.1 V ±IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = ±7 V − 25 nA ±IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = ±7 V − 25 nA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance 20 25 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 4 − pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.7 − pF Cos output capacitance f = 1 MHz − 2 − pF Crs reverse transfer capacitance f = 1 MHz − 30 40 fF F noise figure f = 200 MHz; GS = 2 mS − 1.2 − dB 1996 Jul 30 4 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs MGE797 24 BF992; BF992R MGE799 30 handbook, halfpage I handbook, halfpage D (mA) 20 ID (mA) VG1-S = 0.2 V 0.1 V 16 4V3V VG2-S = 5 V 20 0V 12 2V 1V −0.1 V −0.2 V 8 10 −0.3 V 0V −0.4 V −0.5 V 4 −0.6 V 0 −1 0 0 2 4 6 8 10 VDS (V) 12 VG2-S = 4 V; Tj = 25 °C. 0 VG1-S (V) 1 VDS = 10 V; Tj = 25 °C. Fig.4 Output characteristics; typical values. Fig.5 Transfer characteristics; typical values. MGE798 30 MGE800 30 handbook, halfpage handbook, halfpage 5V 4V 3V |yfs| (mS) Yfs (mS) VG2-S = 5V 4V 2V 20 20 3V 10 10 2V 1V VG2-S = 0 V 1V 0 0 10 ID (mA) 0 −1 20 VDS = 10 V; Tj = 25 °C. Fig.6 VG1-S (V) 1 VDS = 10 V; Tj = 25 °C. Forward transfer admittance as a function of drain current; typical values. 1996 Jul 30 0V 0 Fig.7 5 Forward transfer admittance as a function of gate 1-source voltage; typical values. Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF992; BF992R MGE794 102 handbook, halfpage MGE793 10 handbook, halfpage yis (mS) yos (mS) bos 10 bis 1 1 gis gos 10−1 10−1 10−2 10 102 f (MHz) 10−2 103 10 102 VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. Fig.8 Fig.9 Input admittance as a function of frequency; typical values. MGE795 25 handbook, halfpage Output admittance as a function of frequency; typical values. MGE796 120 handbook, halfpage gfs Yfs (mS) 20 103 f (MHz) yrs (µS) 80 15 −brs 10 −bfs 40 5 grs 0 10 102 f (MHz) 0 103 10 102 f (MHz) 103 VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. Fig.10 Forward transfer admittance as a function of frequency; typical values. Fig.11 Reverse transfer admittance as a function of frequency; typical values. 1996 Jul 30 6 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF992; BF992R PACKAGE OUTLINES handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 2.5 max 1.4 1.2 o 10 max 1 1.1 max o 30 max 2 0 0.1 0.88 0.48 0.1 M A B 0 0.1 MBC845 1.7 TOP VIEW Dimensions in mm. Fig.12 SOT143. 3.0 2.8 handbook, full pagewidth 0.150 0.090 0.40 0.25 B 1.9 3 4 0.1 max o 10 max 0.2 M A A 1.4 1.2 o 2.5 max 10 max 2 1.1 max o 30 max 1 0.48 0.38 0.88 0.78 1.7 0.1 M B TOP VIEW Dimensions in mm. Fig.13 SOT143R. 1996 Jul 30 7 MBC844 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF992; BF992R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 8