DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF543 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability fpage • Designed for broadband operation. 1 2 DESCRIPTION 3 4 Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. 5 6 d g Top view s MBA931 - 1 The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices are marked with a VGS indication intended for matched pair applications. MBB072 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT171 PIN WARNING DESCRIPTION 1 source Product and environmental safety - toxic materials 2 source 3 gate 4 drain 5 source 6 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) CW, class-B 500 28 10 > 12 > 50 CW, class-B 960 28 10 typ. 8 typ. 50 MODE OF OPERATION October 1992 2 Philips Semiconductors Product specification UHF power MOS transistor BLF543 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 2 A Ptot total power dissipation − 25 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base 7 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.4 K/W MRA991 10 MDA488 40 handbook, halfpage handbook, halfpage Ptot ID (A) (W) 30 (1) (1) (2) (2) 1 20 10 10−1 1 10 VDS (V) 0 102 0 80 120 160 Th (°C) (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. October 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF543 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = 5 mA 65 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 0.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 20 mA; VDS = 10 V 1 − 4 V ∆VGS(th) gate-source voltage difference of matched pairs ID = 20 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 0.6 A; VDS = 10 V 300 450 − mS RDS(on) drain-source on-state resistance ID = 0.6 A; VGS = 10 V − 1.7 2.5 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 2.4 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 16 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 12 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 3.2 − pF MDA491 4 MDA495 3 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 2 2 0 1 −2 −4 10−2 10−1 0 ID (A) 1 0 VDS = 10 V. Fig.4 10 15 VGS (V) 20 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current, typical values. October 1992 5 Fig.5 4 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF543 MDA496 4 MDA497 50 C (pF) handbook, halfpage handbook, halfpage RDSon (Ω) 40 3 30 2 20 Cis Cos 1 10 0 0 0 50 100 Tj ( °C) 150 0 10 ID = 0.6 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MDA498 20 Crs (pF) 16 handbook, halfpage 12 8 4 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. October 1992 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF543 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) CW class-B 500 28 20 10 > 12 typ. 15 > 50 typ. 60 CW class-B 960 28 20 10 typ. 8 typ. 50 CW class-B 960 24 20 7.5 typ. 8 typ. 50 MODE OF OPERATION Ruggedness in class-B operation The BLF543 is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MDA490 30 handbook, halfpage Gp (dB) handbook, halfpage ηD ηD (%) Gp PL (W) 20 60 10 10 40 5 20 15 0 0 5 0 10 PL (W) MDA489 15 80 0 0.5 1 PIN (W) 1.5 Class-B operation; VDS = 28 V; IDQ = 20 mA; ZL = 8.4 + j14.3 Ω; f = 500 MHz. Class-B operation; VDS = 28 V; IDQ = 20 mA; ZL = 8.4 + j14.3 Ω; f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. October 1992 6 Philips Semiconductors Product specification UHF power MOS transistor handbook, full pagewidth C2 50 Ω input C1 BLF543 ,,,, ,,, ,,,, L1 C4 L2 L4 D.U.T. L7 L8 C14 C16 L3 BLF543 C3 C12 C13 C15 L5 C5 R1 C9 C8 C6 L6 R5 C10 R2 C7 C11 R3 +VD R4 Fig.11 Test circuit for class-B operation at 500 MHz. October 1992 7 MDA500 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF543 List of components (class-B test circuit at 500 MHz) COMPONENT DESCRIPTION VALUE C1, C6, C9, C16 multilayer ceramic chip capacitor (note 1) 390 pF C2, C14 multilayer ceramic chip capacitor (note 1) 7.5 pF DIMENSIONS CATALOGUE NO. C3, C5, C13, C15 film dielectric trimmer 9 pF C4 multilayer ceramic chip capacitor (note 1) 20 pF 2222 809 09002 C7 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V C8, C10 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109 C12 multilayer ceramic chip capacitor (note 1) 22 pF L1 1 turn enamelled 0.8 mm copper wire 11 nH int. dia. 4.7 mm leads 2 × 5 mm L2 stripline (note 2) 42.5 Ω 14.5 × 3 mm L3, L4 stripline (note 2) 42.5 Ω 6 × 3 mm L5 7 turns enamelled 1 mm copper wire 124 nH length 7.8 mm int. dia. 4 mm leads 2 × 5 mm L6 grade 3B Ferroxcube RF choke L7 stripline (note 2) L8 1 turn enamelled 1 mm copper wire 8 nH R1, R2 0.4 W metal film resistor 1 kΩ R3 10 turns cermet potentiometer 5 kΩ R4 0.4 W metal film resistor 19.6 kΩ 2322 151 71963 R5 1 W metal film resistor 10 Ω 2322 153 51009 2222 852 47104 4312 020 36640 55.7 Ω 31 × 2 mm int. dia. 3.2 mm leads 2 × 5 mm 2322 151 71002 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. October 1992 8 Philips Semiconductors Product specification UHF power MOS transistor BLF543 6 mm 52 mm handbook, full pagewidth 59 mm mounting screw rivet 70 mm strap strap R3 +VG R4 +VD R5 C7 C11 L6 R2 C10 C9 C8 C6 L1 C4 R1 L2 C3 L3 L5 BLF543 C2 C1 C12 C14 L8 L4 C5 C16 L7 C13 C15 MDA487 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz class-B test circuit. October 1992 9 Philips Semiconductors Product specification UHF power MOS transistor handbook, full pagewidth BLF543 ,,,,, ,,,,,, ,,,,, C14 C2 50 Ω input C1 L1 C6 C4 L2 L5 D.U.T. L8 L8 L3 BLF543 C3 L9 L4 C5 C7 C15 C16 L6 C10 R3 C11 C8 R4 C9 L10 C12 C13 MDA499 R2 +VD R1 Fig.13 Test circuit for class-B operation at 960 MHz. October 1992 10 C17 50 Ω output Philips Semiconductors Product specification UHF power MOS transistor BLF543 List of components (class-B test circuit at 960 MHz) COMPONENT DESCRIPTION VALUE C1, C8, C10, C17 multilayer ceramic chip capacitor (note 1) 68 pF C2 multilayer ceramic chip capacitor (note 2) 4.7 pF DIMENSIONS C3, C5, C15, C16 film dielectric trimmer 1.2 to 5.5 pF C4 multilayer ceramic chip capacitor (note 2) 2 × 5.6 pF in parallel C6, C7 multilayer ceramic chip capacitor (note 2) 7.5 pF C9, C12 multilayer ceramic chip capacitor 100 nF C14 multilayer ceramic chip capacitor (note 2) 2 × 4.7 pF in parallel C11, C13 aluminum electrolytic capacitor 10 µF, 63 V L1 stripline (note 3) 50 Ω 12.5 × 2.5 mm L2 stripline (note 3) 50 Ω 19 × 2.5 mm L3 stripline (note 3) 50 Ω 29.5 × 2.5 mm L4, L5 stripline (note 3) 42.5 Ω 3 × 3 mm L6 3 turns enamelled 0.8 mm copper wire 35 nH length 4.6 mm int. dia. 4 mm leads 2 × 5 mm L7 stripline (note 3) 50 Ω 12.5 × 2.5 mm L8 stripline (note 3) 50 Ω 28.5 × 2.5 mm L9 stripline (note 3) 50 Ω 20.5 × 2.5 mm L10 grade 3B Ferroxcube RF choke CATALOGUE NO. 2222 808 00004 2222 852 47104 2222 030 28109 4312 020 36640 R1 0.4 W metal film resistor 205 kΩ R2 10 turns potentiometer 50 kΩ 2322 151 72054 R3 0.4 W metal film resistor 10 kΩ 2322 151 71003 R4 0.4 W metal film resistor 10 Ω 2322 153 51009 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2); thickness 1⁄32 inch. October 1992 11 Philips Semiconductors Product specification UHF power MOS transistor BLF543 MDA492 10 MDA494 40 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 RL 30 −10 20 XL xi −20 −30 10 0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W. Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W. Fig.14 Input impedance as a function of frequency (series components), typical values. Fig.15 Load impedance as a function of frequency (series components), typical values. Optimum input and load impedances Optimum input impedance: 2.3 + j9.5 Ω. Optimum load impedance: 4.3 + j8.6 Ω. Conditions: class-B operation; VDS = 24 V; IDQ = 20 mA; f = 960 MHz; PL = 7.5 W; typical values. MDA493 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W. Fig.16 Power gain as a function of frequency, typical values. October 1992 12 Philips Semiconductors Product specification UHF power MOS transistor BLF543 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A October 1992 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 13 Philips Semiconductors Product specification UHF power MOS transistor BLF543 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 14