DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A • High power gain PIN • Easy power control 1, 8 source • Gold metallization 2, 3 gate • Good thermal stability 4, 5 source • Withstands full load mismatch. 6, 7 drain DESCRIPTION APPLICATIONS • Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. 8 handbook, halfpage 5 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. 1 Top view 4 MBK150 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 12.5 2 >10 >50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 1999 Oct 20 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V VGS gate-source voltage − 20 V ID DC drain current Ptot total power dissipation Tstg Tj − 1 A − 5.7 W storage temperature −65 150 °C junction temperature − 200 °C Tmb ≤ 85 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to mounting base Rth j-mb Tmb ≤ 85 °C, Ptot = 5.7 W MCD789 10 handbook, halfpage ID (A) 1 (1) (2) 10−1 10−2 1 10 VDS (V) 102 (1) Current is this area may be limited by RDS(on). (2) Tmb = 85 °C. Fig.2 DC SOAR. 1999 Oct 20 3 VALUE UNIT 20.5 K/W Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 3 mA; VGS = 0 40 − − V VGS(th) gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 − 4.5 V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 10 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA IDSX on-state drain current VGS = 15 V; VDS = 10 V − 1.3 − A RDSon drain-source on-state resistance ID = 0.3 A; VGS = 15 V − 3.5 4 Ω 80 gfs forward transconductance ID = 0.3 A; VDS = 10 V 135 − mS Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 5.3 − pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 7.8 − pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 1.8 − pF MGP111 15 handbook, halfpage ID (mA) T.C. (mV/K) 10 1200 5 800 0 400 −5 MGP112 1600 handbook, halfpage 1 10 102 ID (mA) 0 103 0 4 8 12 16 20 VGS (V) VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 1999 Oct 20 Fig.4 4 Drain current as a function of gate-source voltage; typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP113 5 MGP114 30 handbook, halfpage handbook, halfpage RDSon C (pF) (Ω) 4 20 3 Cos 2 10 Cis 1 0 0 40 80 120 Tj (°C) 0 160 0 4 8 12 VDS (V) 16 VGS = 15 V; ID = 0.3 A. VGS = 0; f = 1 MHz. Fig.5 Drain-source on-state resistance as a function of junction temperature; typical values. Fig.6 MGP115 5 handbook, halfpage Crs (pF) 4 3 2 1 0 0 4 8 12 VDS (V) 16 VGS = 0; f = 1 MHz. Fig.7 Feedback capacitance as a function of drain-source voltage; typical values. 1999 Oct 20 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 °C; RGS = 237 Ω; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 175 12.5 20 2 >10; typ. 13 >50; typ. 55 Ruggedness in class-B operation The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 175 MHz at rated load power. MGP116 20 handbook, halfpage Gp (dB) MGP117 100 ηD 4 handbook, halfpage PL (W) (%) 16 80 Gp 12 3 60 ηD 2 8 40 4 20 1 0 1 1.5 2 2.5 0 3.5 3 0 0 PL (W) 0.2 0.4 0.6 PIN (W) 0.8 Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz. Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz. Fig.8 Fig.9 Power gain and efficiency as a functions of load power; typical values. 1999 Oct 20 6 Load power as a function of input power; typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 C10 handbook, full pagewidth 50 Ω input C1 C8 L3 D.U.T. L4 L2 L1 C9 L5 C2 R1 C5 R6 C6 C3 L6 R2 +VD C7 C4 R3 R5 R4 MGP118 f = 175 MHz. Fig.10 Test circuit for class-B operation. 1999 Oct 20 7 C11 50 Ω output Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C11 film dielectric trimmer 2 to 9 pF 2222 809 09005 C2, C9 film dielectric trimmer 2 to 9 pF 2222 809 09002 C3, C5 multilayer ceramic chip capacitor; note 1 1 nF; 500 V C4, C6 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V C7 Sprague electrolytic tantalum capacitor 2.2 µF; 35 V C8 multilayer ceramic chip capacitor; note 1 5.1 pF; 500 V C10 multilayer ceramic chip capacitor; note 1 9.1 pF; 500 V L1 8 turns enamelled 0.8 mm copper wire 137 nH length 5.1 mm; int. dia. 4 mm; leads 2 × 5 mm L2, L3 stripline; note 2 81 Ω 8 mm × 2 mm L4 3 turns enamelled 1 mm copper wire 57 nH length 5 mm; int. dia. 6 mm; leads 2 × 5 mm L5 9 turns enamelled 1 mm copper wire 355 nH length 11 mm; int. dia. 7 mm; leads 2 × 5 mm L6 grade 3B Ferroxcube RF choke R1 0.4 W metal film resistor 237 Ω 2322 151 72371 R2 0.4 W metal film resistor 1 kΩ 2322 151 71002 R3 0.4 W metal film resistor 1 MΩ 2322 151 71005 R4 10 turns cermet potentiometer 5 kΩ R5 0.4 W metal film resistor 7.5 kΩ 2322 151 77502 R6 1 W metal film resistor 10 Ω 2322 153 51009 2222 852 47104 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1.6 mm. 1999 Oct 20 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP119 250 MGP120 50 ZL handbook, halfpage handbook, halfpage Zi (Ω) (Ω) 40 RL 125 30 ri 20 0 XL 10 xi −125 0 50 100 150 f (MHz) 0 200 0 50 100 150 f (MHz) 200 Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 Ω; PL = 2 W. Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 Ω; PL = 2 W. Fig.11 Input impedance as a function of frequency (series of components); typical values. Fig.12 Load impedance as a function of frequency (series components); typical values. MGP121 20 handbook, halfpage Gp (dB) 15 10 handbook, halfpage 5 Zi ZL MBA379 0 0 50 100 150 f (MHz) 200 Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 Ω; PL = 2 W. Fig.14 Power gain as a function of frequency; typical values. Fig.13 Definition of MOS impedance. 1999 Oct 20 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of 0.8 mm maximum thickness on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. handbook, full pagewidth 1.87 (2×) 0.60 (4×) 0.80 (2×) 0.50 (12×) 7.38 3.60 1.00 (8×) 1.00 (9×) 4.60 Dimensions in mm. Fig.15 Footprint SOT409A. 1999 Oct 20 10 MGK390 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.23 0.18 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 1.02 0.51 0.10 0.00 0.25 0.25 7° 0° inches 0.093 0.081 0.023 0.017 0.009 0.007 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.040 0.020 0.004 0.000 0.010 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409A 1999 Oct 20 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. 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