DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor FEATURES BLF348 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability 1 • Gold metallization ensures excellent reliability. 2 d2 k, halfpage g2 DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. 5 3 4 Top view drain 1 2 drain 2 3 gate 1 4 gate 2 5 source MBB157 MSB008 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environment safety - toxic materials DESCRIPTION 1 d1 5 PINNING − SOT262A1 PIN s g1 This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance in a push-pull common source test circuit. MODE OF OPERATION class-A fvision (MHz) VDS (V) ID (A) Th (°C) dim (dB) (note 1) Po sync (W) Gp (dB) 224.25 28 2 × 4.6 70 −52 > 67 > 11 224.25 28 2 × 4.6 25 −52 typ. 75 typ. 13 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. October 1992 2 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS drain-source voltage − 65 V ±VGSS gate-source voltage − 20 V ID DC drain current − 25 A Ptot total power dissipation − 500 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C; total device; both sections equally loaded THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE CONDITIONS Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 K/W MRA933 102 handbook, halfpage MGE616 500 handbook, halfpage Ptot (W) ID (A) 400 (2) (1) (2) (1) 300 10 200 100 1 1 10 VDS (V) 0 102 40 80 120 160 Th (°C) (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. October 1992 0 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VGS = 0; ID = 0.1 A MIN. TYP. MAX. UNIT 65 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 0.1 A; VDS = 10 V 2 − 4.5 V ∆VGS(th) gate-source voltage difference of both transistor sections ID = 0.1 A; VDS = 10 V − − 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 RDS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 37 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 495 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 340 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF MGP229 0 MGP230 60 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 40 −2 −3 20 −4 −5 10−1 1 ID (A) 0 10 0 5 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. October 1992 4 10 15 VGS (V) 20 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 MGP231 MGP234 200 1500 handbook, halfpage handbook, halfpage RDSon C (pF) (mΩ) 150 1000 100 500 Cis Cos 50 0 0 50 100 Tj (°C) 150 0 10 ID = 8 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MGP232 20 30 40 Input and output capacitance as functions of drain-source voltage, typical values per section. MGP233 −50 600 handbook, halfpage VDS (V) handbook, halfpage dim (dB) Crs (pF) −55 Th = 70 °C 400 25 °C −60 200 −65 −70 10 0 0 10 20 30 VDS (V) 40 30 50 70 90 Po sync (W) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. October 1992 Fig.9 5 Intermodulation distortion as a function of peak synchronized output power. Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 70 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in a linear amplifier (common source circuit class-A circuit). RGS = 82 Ω per section; optimum load impedance per section = 0.14 + j0.14 Ω. MODE OF OPERATION class-A fvision (MHz) VDS (V) ID (A) Th (°C) dim (dB) (note 1) 224.25 28 2 × 4.6 70 224.25 28 2 × 4.6 224.25 28 2 × 4.6 224.25 28 2 × 4.6 Po sync (W) Gp (dB) −52 > 67 typ. 70 > 11 typ. 12.5 25 −52 typ. 75 typ. 13 70 −55 > 54 typ. 57 > 11 typ.12.5 25 −55 typ. 62 typ. 13 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF348 is capable of withstanding a load mismatch corresponding to VSWR = 20 through all phases under the following conditions: VDS = 28 V; f = 224.25 MHz at rated output power. October 1992 6 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C14 C21 R1 L10 C10 +5 V R7 C15 R2 C23 C11 C7 C16 R3 L1 50 Ω input C2 L4 L6 L2 C22 D.U.T. L8 C4 L11 C28 L18 L14 L16 C29 C5 C30 L20 C32 C33 7 C3 C1 L3 C34 L22 C35 L5 L7 L9 R4 L15 L17 L19 C31 L12 BFL348 L21 50 Ω output L23 C36 L24 Philips Semiconductors C20 VHF linear push-pull power MOS transistor dbook, full pagewidth October 1992 C6 +VDD1 C17 C8 C12 C24 C18 C25 R5 C13 +5 V L13 R8 C26 R6 C9 C19 MGP235 Fig.10 Test circuit for class-A operation. BLF348 +VDD2 f = 225 MHz. Product specification C27 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 List of components (class-A test circuit) COMPONENT DESCRIPTION VALUE C1 film dielectric trimmer 2 to 9 pF C2, C3 multilayer ceramic chip capacitor (note 1) 2 × 10 pF in parallel + 22 pF C4, C30 film dielectric trimmer 5 to 60 pF C5 multilayer ceramic chip capacitor (note 1) 82 pF, 500 V C6, C9, C10, C13, multilayer ceramic chip capacitor C14, C19 100 nF, 50 V C11, C12, C20, C27 1 nF, 500 V multilayer ceramic chip capacitor (note 1) DIMENSIONS 2222 809 09006 2222 809 08003 2222 852 47104 C7, C8, C16, C17 MKT film capacitor 1 µF C21, C26 electrolytic capacitor 10 µF, 63 V C22, C25 electrolytic capacitor 220 µF, 63 V C15, C18, C23, C24 multilayer ceramic chip capacitor (note 1) 510 pF, 500 V C28, C31 multilayer ceramic chip capacitor (note 1) 2 × 8.2 pF in parallel, 500 V C29 multilayer ceramic chip capacitor (note 1) 3 × 39 pF in parallel, 500 V C32 multilayer ceramic chip capacitor (note 1) 33 pF, 500 V C33 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C34, C35 multilayer ceramic chip capacitor (note 1) 10 pF + 18 pF + 62 pF (3 in parallel), 500 V C36 film dielectric trimmer 2 to 18 pF L1, L3, L22, L24 stripline (note 2) 50 Ω 4.8 × 80 mm L2, L23 semi-rigid cable (note 3) 50 Ω ext. conductor length 80 mm ext. dia 3.6 mm L4, L5 stripline (note 2) 43 Ω 6 × 32 mm L6, L7 stripline (note 2) 43 Ω 6 × 7 mm L8, L9 stripline (note 2) 43 Ω 6 × 7 mm L10, L13 grade 3B Ferroxcube wideband HF choke 2 in parallel L11, L12 3/4 turn enamelled 2 mm copper wire 40 nH space 1 mm int. dia. 10 mm leads 2 × 7 mm L14, L15 stripline (notes 2 and 4) 43 Ω 6 × 6 mm L16, L17 stripline (notes 2 and 4) 43 Ω 6 × 9.5 mm L18, L19 stripline (notes 2 and 4) 43 Ω 6 × 27.5 mm L20, L21 stripline (notes 2 and 4) 43 Ω 6 × 13 mm October 1992 8 CATALOGUE NO. 2222 371 11105 2222 809 09003 4312 020 36642 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor COMPONENT DESCRIPTION VALUE R1, R6 10 turns Bourns potentiometer 50 kΩ R2, R5 0.4 W metal film resistor 1 kΩ R3, R4 0.4 W metal film resistor 82 Ω R7, R8 1 W, ±5% metal film resistor 10 Ω BLF348 DIMENSIONS CATALOGUE NO. Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 - L9, L14 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 x 35 µm. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered on to striplines L14 - L21. October 1992 9 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 MGP236 MGP237 2 0.8 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 1 0.6 RL 0 0.4 −1 xi −2 −3 160 180 XL 0.2 200 220 f (MHz) 0 160 240 180 200 220 f (MHz) 240 Class-A operation; VDS = 28 V; IDQ = 2 × 4.6 A; RGS = 82 Ω (per section); Th = 70 °C. Class-A operation; VDS = 28 V; IDQ = 2 × 4.6 A; RGS = 82 Ω (per section); Th = 70 °C. Fig.11 Input impedance as a function of frequency (series components), typical values. Fig.12 Load impedance as a function of frequency (series components), typical values. MGP238 20 handbook, halfpage Gp (dB) 15 10 5 0 160 180 200 220 f (MHz) 240 Class-A operation; VDS = 28 V; IDQ = 2 × 4.6 A; RGS = 82 Ω (per section); Th = 70 °C. Fig.13 Power gain as a function of frequency, typical values. October 1992 10 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 D A F U1 B q C w2 M C H1 1 H c 2 E1 p U2 5 E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 5.85 5.58 0.16 0.10 inches 0.227 0.197 0.230 0.006 0.220 0.004 OUTLINE VERSION D F H H1 p Q q U1 U2 w1 w2 w3 21.98 10.27 10.29 11.05 21.71 10.05 10.03 1.78 1.52 20.58 20.06 17.02 16.51 3.28 3.02 2.85 2.59 27.94 34.17 33.90 9.91 9.65 0.51 1.02 0.25 0.865 0.404 0.405 0.435 0.855 0.396 0.395 0.070 0.060 0.81 0.79 0.67 0.65 0.129 0.119 0.112 1.100 0.102 1.345 1.335 0.390 0.380 0.02 0.04 0.01 e E E1 REFERENCES IEC JEDEC EIAJ SOT262A1 October 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 12