DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability k, halfpage 1 4 • Withstands full load mismatch • Gold metallization ensures excellent reliability. d g MBB072 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. 2 s 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B September 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 28 15 > 13 > 50 2 Philips Semiconductors Product specification VHF power MOS transistor BLF244 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 3 A Ptot total power dissipation − 38 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 38 W 4.6 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 38 W 0.3 K/W MRA919 10 MGP151 50 handbook, halfpage handbook, halfpage Ptot (W) 40 ID (A) (1) 30 (1) (2) (2) 1 20 10 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 100 Th (°C) 150 (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. September 1992 50 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = 5 mA 65 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched devices ID = 5 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 0.75 A; VDS = 10 V 0.6 − − S RDS(on) drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 5 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF F noise figure (see Fig. 13) ID = 0.5 A; VDS = 28 V; R1 = 23 Ω; Th = 25 °C; f = 175 MHz; Rth mb-h = 0.3 K/W − 4.3 − dB MGP152 MGP153 6 2 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 0 4 −2 −4 2 −6 −8 0 1 10 102 ID (mA) 0 103 4 VDS = 10 V; valid for Tj = 25 to 125 °C. VDS = 10 V. solid line: Tj = 25 °C. dotted line: Tj = 125 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 4 8 12 VGS (V) 16 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP154 2 MGP155 160 handbook, halfpage handbook, halfpage C (pF) RDS(on) (Ω) 120 1 80 Cis Cos 40 0 0 0 40 80 120 Tj (°C) 160 0 Drain-source on-state resistance as a function of junction temperature, typical values. Fig.7 MGP156 20 handbook, halfpage Crs (pF) 10 0 0 20 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. VGS = 10 V; ID = 0.75 A. Fig.6 10 5 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF244 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) 175 28 25 175 12.5 25 Zi (Ω) (note 1) GP (dB) ηD (%) 15 > 13 typ. 17 > 50 typ. 65 3.0 − j4.0 6.3 + j9.8 46.4//46.4 6 typ. 15 typ. 60 3.0 − j4.0 4.5 + j3.3 100 IDQ PL (mA) (W) ZL (Ω) R1 (Ω) Note 1. R1 included. Ruggedness in class-B operation The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power. MGP157 30 MGP158 20 handbook, halfpage handbook, halfpage PL (W) Gp (dB) Gp 100 ηD (%) ηD 20 10 10 0 1 PIN (W) 50 0 2 0 10 20 PL (W) 0 30 Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.9 Fig.10 Power gain and efficiency as functions of load power, typical values. Load power as a function of input power, typical values. September 1992 6 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP159 20 MGP160 20 handbook, halfpage handbook, halfpage 100 ηD (%) Gp (dB) PL (W) 16 10 12 Gp 80 ηD 60 8 40 4 0 0 1 2 PIN (W) 0 4 8 12 PL (W) 20 16 Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.11 Load power as a function of input power, typical values. Fig.12 Power gain and efficiency as functions of load power, typical values. +VG handbook, full pagewidth R3 C14 L6 +VD R2 C6 C13 C7 L5 C2 50 Ω input C1 R1 C5 L1 D.U.T. L2 L4 C8 L7 L8 L3 C9 C3 C11 C12 50 Ω output C10 C4 MGP161 f = 175 MHz. Fig.13 Test circuit for class-B operation. September 1992 7 Philips Semiconductors Product specification VHF power MOS transistor BLF244 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C12 multilayer ceramic chip capacitor (note 1) 680 nF C2 multilayer ceramic chip capacitor (note 1) 20 pF C3, C4, C9 film dielectric trimmer 5 to 60 pF C5 multilayer ceramic chip capacitor (note 1) 75 pF C6 multilayer ceramic chip capacitor 10 nF C7 multilayer ceramic chip capacitor (note 1) 100 pF C8 multilayer ceramic chip capacitor (note 1) 47 pF C10, C11 multilayer ceramic chip capacitor (note 1) 11 pF C13 solid tantalum capacitor 2.2 µF C14 multilayer ceramic chip capacitor 100 nF L1 4 turns enamelled 1 mm copper wire 32 nH length 6.3 mm int. dia. 3 mm leads 2 × 5 mm L2 1 turn enamelled 1 mm copper wire 12.2 nH int. dia. 5.6 mm leads 2 × 5 mm 30 Ω CATALOGUE NO. 2222 809 08003 2222 852 47103 2222 852 47104 15 × 6 mm L3, L4 stripline (note 2) L5 6 turns enamelled 1 mm copper wire 119 nH L6 grade 3B Ferroxcube RF choke L7 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm int. dia. 3 mm leads 2 × 5 mm L8 4 turns enamelled 1 mm copper wire 28.5 nH length 8.5 mm int. dia. 3 mm leads 2 × 5 mm R1 metal film resistor (note 3) R2 0.4 W metal film resistor 1 MΩ R3 0.4 W metal film resistor 10 Ω length 10.4 mm int. dia. 6 mm leads 2 × 5 mm 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5), thickness 1⁄16 inch. 3. Refer to Application Information for value. September 1992 8 Philips Semiconductors Product specification VHF power MOS transistor BLF244 150 handbook, full pagewidth strap rivet 70 strap L6 R2 C13 +VG C2 C1 L1 C5 L2 +VD C7 C14 C6 R3 L5 R1 L7 L3 C8 L8 C11 C12 L4 C10 C3 C9 C4 MGP162 The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and hollow rivets under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm. Fig.14 Component layout for 175 MHz class-B test circuit. September 1992 9 Philips Semiconductors Product specification VHF power MOS transistor BLF244 MGP164 60 MGP165 25 handbook, halfpage handbook, halfpage Zi ZL (Ω) 20 (Ω) RL 40 15 xi 10 20 XL 5 ri 0 20 40 60 80 0 20 100 120 f (MHz) 40 60 80 100 120 f (MHz) Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.15 Input impedance as a function of frequency (series components), typical values. Fig.16 Load impedance as a function of frequency (series components), typical values. MGP166 40 handbook, halfpage Gp (dB) 36 32 28 24 20 20 40 60 80 100 120 f (MHz) Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.17 Power gain as function of frequency, typical values. September 1992 10 Philips Semiconductors Product specification VHF power MOS transistor BLF244 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A September 1992 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification VHF power MOS transistor BLF244 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 12