DISCRETE SEMICONDUCTORS DATA SHEET BLF225 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF225 PIN CONFIGURATION • Easy power control • Good thermal stability k, halfpage • Withstands full load mismatch. 1 4 DESCRIPTION d Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. g MBB072 2 s 3 MSB057 The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. CAUTION PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B September 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 12.5 30 > 8.5 > 60 2 Philips Semiconductors Product specification VHF power MOS transistor BLF225 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 9 A Ptot total power dissipation − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base 2.6 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.3 K/W MRA915 2 handbook,10 halfpage MGP122 100 handbook, halfpage Ptot ID (A) (W) 80 10 (2) 60 (2) (1) (1) 40 1 20 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 80 120 Th (°C) 160 (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. September 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF power MOS transistor BLF225 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VGS = 0; ID = 30 mA MIN. TYP. MAX. UNIT 40 − − V(BR)DSS drain-source breakdown voltage V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 1 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 30 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 3.5 A; VDS = 10 V 1.5 2.2 − S RDS(on) drain-source on-state resistance ID = 3.5 A; VGS = 15 V − 0.25 0.35 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 16 − A Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 120 − pF Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 140 − pF Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 20 − pF MEA741 6 MRA244 handbook,20 halfpage handbook, halfpage T.C. (mV/K) 4 ID (A) 15 2 0 10 −2 5 −4 −6 102 101 1 ID (A) 0 10 0 5 10 15 20 VGS (V) VDS = 10 V. VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 Fig.5 4 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF225 MGP123 0.5 RDS(on) MEA739 600 handbook, halfpage handbook, halfpage C (pF) (Ω) 0.4 400 0.3 Cos 0.2 200 Cis 0.1 0 0 0 50 100 150 Tj (°C) 0 4 VGS = 15 V; ID = 3.5 A. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MRA242 60 rs (pF) 50 handbook, C halfpage 40 30 20 10 0 0 4 8 12 16 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 5 8 12 VDS (V) 16 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF225 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηC (%) 175 12.5 100 30 > 8.5 typ. 9.5 > 60 typ. 70 CW, class-B Ruggedness in class-B- operation The BLF225 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 15.5 V; f = 175 MHz at rated load power. MGP124 20 handbook, halfpage η Gp (dB) MEA740 50 PL (W) 80 handbook, halfpage η (%) 40 15 60 30 Gp 10 40 20 5 20 0 10 0 0 0 10 20 30 40 PL (W) 0 50 4 8 PIN (W) 12 Class-B operation; VDS = 12.5 V; IDQ = 100 mA; f = 175 MHz. Class-B operation; VDS = 12.5 V; IDQ = 100 mA; f = 175 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. September 1992 6 Philips Semiconductors Product specification VHF power MOS transistor BLF225 50 Ω input L3 D.U.T. handbook, full pagewidth C1 C9 L6 C8 C2 L4 R1 C3 C5 R4 R2 C7 C4 L5 VBIAS C6 VDS R3 f = 175 MHz. Fig.11 Test circuit for class-B operation. September 1992 50 Ω output L2 L1 7 MGP125 C10 Philips Semiconductors Product specification VHF power MOS transistor BLF225 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 4 to 40 pF 2222 809 07008 C2, C10 film dielectric trimmer 5 to 60 pF 2222 809 07011 C3 multilayer ceramic chip capacitor (note 1) 100 pF, 500 V C4 ceramic chip capacitor 100 nF, 50 V C5 multilayer ceramic chip capacitor (note 1) 680 pF, 500 V C6 electrolytic capacitor 10 µF, 63 V C7 polyester capacitor 100 nF, 250 V C8 multilayer ceramic chip capacitor (note 1) 43 pF, 500 V C9 film dielectric trimmer 7 to 100 pF L1 3 turns enamelled 0.5 mm copper wire 18 nH length 3.3 mm int. dia. 2 mm leads 2 × 5 mm L2, L3 stripline (note 2) 31 Ω 12 × 6 mm L4 3 turns enamelled 1.5 mm copper wire 28 nH length 8.2 mm int. dia. 4 mm leads 2 × 5 mm L5 grade 3B Ferroxcube RF choke L6 1 turn enamelled 1.5 mm copper wire 36 nH R1 0.4 W metal film resistor 1 kΩ 2322 151 51002 R2 0.4 W metal film resistor 1 MΩ 2322 151 51005 R3 10 turns cermet potentiometer 5 kΩ R4 0.4 W metal film resistor 10 Ω 2222 852 47104 2222 030 38109 2222 809 07015 4312 020 36642 length 4 mm int. dia. 3.5 mm leads 2 × 5 mm 2322 151 51009 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5), thickness 1⁄16 inch. September 1992 8 Philips Semiconductors Product specification VHF power MOS transistor BLF225 150 handbook, full pagewidth rivets 72 rivets strap strap R3 L5 R2 C7 C3 R4 C4 C8 L4 R1 L3 L2 L6 L1 C1 C6 C5 C2 C9 C10 MGP126 The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. Fig.12 Component layout for 175 MHz class-B test circuit. September 1992 9 Philips Semiconductors Product specification VHF power MOS transistor BLF225 MGP128 10 MGP129 4 handbook, halfpage handbook, halfpage Zi (Ω) ri ZL (Ω) RL 0 2 xi −10 0 XL −20 −30 −2 0 50 100 150 f (MHz) 200 0 50 100 150 f (MHz) 200 Class B-operation; VDS = 12.5 V; IDQ = 100 mA; PL = 30 W. Class B-operation; VDS = 12.5 V; IDQ = 100 mA; PL = 30 W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MGA053 30 handbook, halfpage Gp (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 12.5 V; IDQ = 100 mA; PL = 30 W. Fig.15 Definition of MOS impedance. September 1992 Fig.16 Power gain as a function of frequency, typical values. 10 Philips Semiconductors Product specification VHF power MOS transistor BLF225 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A September 1992 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification VHF power MOS transistor BLF225 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 12