PHILIPS BLF147

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF147
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES
BLF147
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
ook, halfpage 4
3
• Good thermal stability
• Withstands full load mismatch.
d
DESCRIPTION
g
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
MBB072
1
2
MLA876
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to 'General' section for further
information.
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PINNING - SOT121
PIN
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
DESCRIPTION
1
drain
2
source
3
gate
4
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
SSB, class-AB
CW, class-B
September 1992
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
d5
(dB)
28
28
150 (PEP)
> 17
> 35
< −30
< −30
108
28
150
typ. 70
typ. 70
−
−
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
±VGS
gate-source voltage
−
20
V
ID
DC drain current
−
25
A
Ptot
total power dissipation
−
220
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-mb
thermal resistance from junction to mounting base
0.8 K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2 K/W
MRA904
102
handbook, halfpage
MGP049
300
handbook, halfpage
Ptot
ID
(A)
(W)
(1)
200
(1)
(2)
(2)
10
100
1
1
10
VDS (V)
0
102
0
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
100
Th (°C)
150
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
September 1992
50
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ID = 100 mA; VGS = 0
MIN.
TYP. MAX.
65
−
−
UNIT
V(BR)DSS
drain-source breakdown voltage
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
5
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 200 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
matched pairs
ID = 100 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
−
S
RDS(on)
drain-source on-state resistance
ID = 8 A; VGS = 10 V
−
0.1
0.15
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
37
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
450
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
360
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
55
−
pF
MGP050
MGP051
60
0
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
−1
40
−2
−3
20
−4
−5
10−2
0
10−1
1
ID (A)
0
10
VDS = 28 V; valid for Th = 25 to 70 °C.
Fig.4
10
15
VGS (V)
20
VDS = 10 V.
Fig.5
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
September 1992
5
4
Drain current as a function of gate-source
voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP052
170
MRA903
1400
handbook, halfpage
handbook, halfpage
C
(pF)
RDS (on)
(mΩ)
150
1200
130
800
110
400
Cis
Cos
0
90
0
50
100
0
150
Tj (°C)
10
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature, typical
values.
MRA902
handbook, halfpage
Crs
(pF)
400
300
200
100
0
0
10
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
30
40
VDS (V)
ID = 8 A; VGS = 10 V.
500
20
5
Input and output capacitance as functions
of drain-source voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-AB circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
PL
(W)
20 to 150 (PEP)
f
(MHz)
VDS
(V)
IDQ
(A)
Gp
(dB)
ηD
(%)
d3
(dB)
(note 2)
d5
(dB)
(note 2)
28
28
1
> 17
typ. 19
> 35
typ. 40
< −30
typ. −34
< −30
typ. −40
Notes
1. Optimum load impedance: 2.1 + j0 Ω.
2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 28 V; f = 28 MHz at rated load power.
MGP053
MGP054
60
30
handbook, halfpage
handbook, halfpage
ηD
(%)
Gp
(dB)
40
20
20
0
10
100
0
PL (W) PEP
0
200
100
PL (W) PEP
200
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9
Fig.10 Efficiency as a function of load power,
typical values.
Gain as a function of load power, typical
values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP055
−20
MGP056
−20
handbook, halfpage
handbook, halfpage
d3
(dB)
d5
(dB)
−30
−30
−40
−40
−50
−50
−60
−60
0
100
200
PL (W) PEP
0
100
PL (W) PEP
200
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a
function of load power, typical values.
Fig.12 Fifth order intermodulation distortion as a
function of load power, typical values.
handbook, full pagewidth
C8
C1
C2
C10
L7
C9
C3
R1
R2
C11
L4
C5
R5
C6
R3
R4
L5
+VG
L6
C7
+VD
MGP057
f = 28 MHz.
Fig.13 Test circuit for class-AB operation.
7
C15
C13
C4
September 1992
C12
C14
L2
L1
input
50 Ω
L3
D.U.T.
output
50 Ω
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C13, C14
film dielectric trimmer
7 to 100 pF
2222 809 07015
C2, C8, C9
multilayer ceramic chip capacitor
(note 1)
75 pF
C4, C5
multilayer ceramic chip capacitor
100 nF
C6
multilayer ceramic chip capacitors in 3 × 100 nF
parallel
C7
electrolytic capacitor
2.2 µF, 63 V
C10
multilayer ceramic chip capacitor
(note 1)
100 pF
C11, C12
multilayer ceramic chip capacitor
(note 1)
150 nF
C15
multilayer ceramic chip capacitor
(note 1)
240 pF
L1
6 turns enamelled 0.7 mm copper
wire
145 nH
length 5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L2, L3
stripline (note 2)
41.1 Ω
length 13 × 6 mm
L4
4 turns enamelled 1.5 mm copper
wire
148 nH
length 8 mm;
int. dia. 10 mm;
leads 2 × 5 mm
L5, L6
grade 3B Ferroxcube wideband HF
choke
L7
3 turns enamelled 2.2 mm copper
wire
79 nH
R1, R2
1 W metal film resistor
19.6 Ω
2322 153 51969
R3
0.4 W metal film resistor
10 kΩ
2322 151 71003
R4
0.4 W metal film resistor
1 MΩ
2322 151 71005
R5
1 W metal film resistor
10 Ω
2322 153 51009
2222 852 47104
2222 852 47104
4312 020 36642
length 8 mm;
int. dia. 8 mm;
leads 2 × 5 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP058
30
MGP059
10
handbook, halfpage
handbook, halfpage
GP
(dB)
Zi
(Ω)
20
5
ri
10
0
xi
−5
0
0
10
20
30
f (MHz)
0
10
20
f (MHz)
30
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.
Fig.14 Gain as a function of frequency, typical
values.
Fig.15 Input impedance as a function of frequency
(series components), typical values.
MGP061
4
MGP062
3
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
2
2
ri
RL
0
1
xi
−2
−4
XL
0
0
50
100
150
f (MHz)
−1
200
0
50
100
150
f (MHz)
200
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.16 Input impedance as a function of frequency
(series components), typical values.
Fig.17 Load impedance as a function of frequency
(series components), typical values.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP060
30
handbook, halfpage
Gp
(dB)
20
10
0
0
50
100
150
f (MHz)
200
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS = 15 Ω; PL = 150 W.
Fig.18 Power gain as a function of frequency,
typical values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
B
U1
c
H
b
L
4
α
w2 M C
3
A
D1
U2
p
U3
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
OUTLINE
VERSION
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
45°
0.312 0.130
0.249 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT121B
September 1992
α
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
11
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12