Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage VBE = 0 V 0.27 12 56 600 600 300 1.5 3 50 1.0 19 76 V V V A A W V Fall time (Inductive) PINNING - SOT533 PIN PIN CONFIGURATION base 2 collector 3 emitter ns SYMBOL DESCRIPTION 1 tab Tmb ≤ 25 ˚C IC = 1.0 A;IB = 0.2 A IC = 1.0 A; VCE = 5 V IC = 1.0 A; IB1= 0.2 A c b collector 1 2 Top view 3 e MBK915 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 600 300 600 1.5 3 0.75 1.5 50 150 150 V V V A A A A W ˚C ˚C TYP. MAX. UNIT - 2.5 K/W 70 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient January 2000 CONDITIONS in free air 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES,ICBO ICES Collector cut-off current ICEO IEBO VCEOsust Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VCEO = VCEOMmax (300V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 1.0 A;IB = 0.2 A IC = 1.0 A;IB = 0.2 A IC = 1mA; VCE = 5 V IC = 100mA; VCE = 5 V IC = 1.0 A; VCE = 5 V MIN. TYP. MAX. UNIT - 0.14 39 100 500 µA µA 300 3.7 20 - 100 100 - µA µA V 17 19 9 0.27 1.03 23 30 12 1.0 1.3 46 19 V V TYP. MAX. UNIT 0.78 0.91 0.25 1.0 1.22 0.34 µs µs µs 0.55 56 0.74 76 µs ns - 1.5 140 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 1.0 A; IBon = -IBoff = 0.2 A; RL = 75 ohms; VBB2 = 4V; Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH; -VBB = 5 V ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). January 2000 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU ! + 50v 100-200R 10 Zth j-mb / (K/W) D= 1 0.5 0.2 Horizontal 0.1 Oscilloscope 0.05 0.1 Vertical 1R 300R 30-60 Hz 0.02 PD tp D= tp T 0 6V t T 0.01 10us Fig.1. Test circuit for VCEOsust. 1ms t/s 0.1s 10ms Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T HFE 50 IC / mA 25 C 125 C 30 20 -40 C 15 250 10 VCE = 1V 5 100 10 0 2 min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. 0.01 0.05 0.1 0.5 1 2 3 IC/A Fig.5. Typical DC current gain. hFE = f(IC) parameter VCE 120 HFE 50 Normalised Power Derating PD% 125 C 110 25 C 30 100 90 20 80 15 -40 C 70 10 VCE = 5V 60 50 5 40 30 20 2 10 0 0 20 40 60 80 100 Tmb / C 120 140 0.01 0.1 0.5 1 2 3 IC/A Fig.3. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) January 2000 0.05 Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU VCEsat/V VBEsat/V 1.3 1.2 1.2 1 1.1 0.8 1 0.6 0.9 0.4 0.8 0.2 0.7 0 0.01 0.02 0.05 0.1 0.2 0.5 1 0.6 0.01 2 0.02 0.05 0.1 IC/A 0.2 0.5 1 2 IC/A Fig.7. Collector-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 Fig.8. Base-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 INDUCTIVE SWITCHING VCC ICon 90 % IC LC 10 % tf ts IBon LB t toff T.U.T. IBon IB -VBB t -IBoff Fig.9. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH Fig.10. Switching times waveforms with inductive load. tfi /ns 200 tfi /ns 250 IC/IB = 10 200 IC = 1.5A 150 150 IC = 1A 100 100 IC/IB = 5 50 50 IC = 0.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 0 0.2 11 Fig.11. Inductive switching. tfi = f(hFE) January 2000 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.12. Inductive switching. tfi = f(IC) 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU tsi /us 1 tsi /us 1 IC/IB = 3 0.8 0.8 IC = 1.5A IC/IB = 5 0.6 0.6 IC = 1A 0.4 0.4 IC/IB = 10 IC = 0.5A 0.2 0.2 0 0.2 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0.4 Fig.13. Inductive switching. tsi = f(hFE) 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.14. Inductive switching. tsi = f(IC) RESISTIVE SWITCHING VCC ICon 90 % 90 % IC RL 10 % ts VIM RB ton 0 IBon IB tp tf toff T.U.T. 10 % T tr 30ns -IBoff Fig.15. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.16. Switching times waveforms with resistive load. ton /us ton /us 2 2 IC/IB = 10 IC = 1.5A 1.5 1.5 IC/IB = 5 IC = 1A 1 1 0.5 0.5 IC = 0.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 0 0.2 11 Fig.17. Resistive switching. ton = f(hFE) January 2000 IC/IB = 3 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.18. Resistive switching. ton = f(IC) 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU ts /us 2 ts us 2.5 IC/IB = 3 IC = 0.5A 2 1.5 1.5 IC/IB = 5 IC = 1A 1 1 IC = 1.5A 0.5 0.5 IC/IB = 10 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 0 0.2 11 0.4 Fig.19. Resistive switching. ts = f(hFE) 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 2 2.2 Fig.20. Resistive switching. ts = f(IC) tf /ns 800 tf /ns 5,000 2,000 IC = 0.5A 600 IC/IB = 3 1,000 IC/IB = 5 400 500 IC = 1A 200 IC/IB = 10 200 100 IC = 1.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 50 0.2 11 0.4 Fig.21. Resistive switching. tf = f(hFE) 0.6 0.8 1 1.2 IC /A 1.4 1.6 1.8 Fig.22. Resistive switching. tf = f(IC) IC/A VCC 2.5 2.25 2 1.75 LC 1.5 1.25 VCL(RBSOAR) IBon 1 PROBE POINT LB -9V 0.75 -5V -3V 0.5 -1V -VBB T.U.T. 0.25 0 0 100 200 300 400 500 600 700 800 VCEclamp/V Fig.24. Reverse bias safe operating area Tj ≤ Tjmax for -VBE = 9V, 5V,3V & 1V Fig.23. Test Circuit for the RBSOA test. Vcl ≤ 600V; Vcc = 150V; LB = 1µH; Lc = 200µH January 2000 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU MECHANICAL DATA Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533 E A A1 E1 D1 mounting base D Q L 1 2 e1 3 b c w M e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 mm 2.38 2.22 0.89 0.71 OUTLINE VERSION SOT533 b c 0.89 0.56 0.71 0.46 D D1 E E1 7.28 6.94 1.06 0.96 6.73 6.47 5.36 5.26 e L Q 9.8 9.4 1.00 1.10 e1 4.57 2.285 REFERENCES IEC JEDEC EIAJ TO-251 EUROPEAN PROJECTION ISSUE DATE 99-02-18 Fig.25. SOT533 surface mounting package. Pin 2 connected to mounting base. January 2000 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 2000 8 Rev 1.000