VISHAY SUB75N06-12L

SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET
V(BR)DSS (V)
60
rDS(on) ()
ID (A)
0.012 @ VGS = 10 V
75
0.014 @ VGS = 4.5 V
70
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB75N06-12L
Top View
N-Channel MOSFET
SUP75N06-12L
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
20
TC = 25C
Continuous Drain Current (TJ = 175C)
TC = 100C
53
A
IDM
180
Avalanche Current
IAR
60
Power Dissipation
V
75
ID
Pulsed Drain Current
Repetitive Avalanche Energya
Unit
L = 0.1 mH
EAR
180
TC = 25C (TO-220AB and TO-263)
PD
142b
TA = 25C (TO-263)c
PD
3.75c
TJ, Tstg
–55 to 175
C
Limit
Unit
Operating Junction and Storage Temperature Range
mJ
W
Parameter
Symbol
PCB Mount (TO-263)c
Junction-to-Ambient
40
RthJA
Free Air (TO-220AB)
Junction-to-Case
62.5
RthJC
C/W
1.05
Notes:
a. Duty cycle 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
www.vishay.com FaxBack 408-970-5600
2-1
SUP/SUB75N06-12L
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, IDS = 250 mA
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125C
50
On-State Drain Currenta
ID(on)
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
2
"100
VDS = 60 V, VGS = 0 V, TJ = 175C
VDS = 5 V, VGS = 10 V
A
0.0085
VGS = 10 V, ID = 30 A, TJ = 125C
rDS(on)
0.024
0.0105
VGS = 4.5 V, ID = 30 A, TJ = 125C
VDS = 15 V, ID = 30 A
W
0.014
0.0225
VGS = 4.5 V, ID = 30 A, TJ = 175C
gfs
0.012
0.019
VGS = 10 V, ID = 30 A, TJ = 175C
VGS = 4.5 V, ID = 30 A
Forward Transconductancea
mA
A
150
75
VGS = 10 V, ID = 30 A
a
D i S
O S
R i
Drain-Source
On-State
Resistance
nA
0.03
25
60
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
3170
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
550
170
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
13.5
Turn-On Delay Timec
td(on)
9
tr
VDD = 30 V,, RL = 0.4 W
8
20
td(off)
ID ] 75 A, VGEN = 10 V, RG = 2.5 W
77
150
20
40
Rise Timec
Turn-Off Delay Timec
Fall Timec
59
VDS = 30 V,
V VGS = 10 V,
V ID = 75 A
tf
100
nC
C
10
20
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)b
Continuous Current
Is
75
Pulsed Current
ISM
180
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = 75 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 60 A
A, di/d
di/dt = 100 A/
A/ms
1.4
V
45
ns
2
A
0.045
mC
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
SUP/SUB75N06-12L
Vishay Siliconix
Output Characteristics
Transfer Characteristics
120
200
VGS = 10 thru 5 V
160
I D – Drain Current (A)
I D – Drain Current (A)
90
120
4V
80
40
60
TC = 125C
30
3V
25C
–55C
2V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
0.020
TC = –55C
r DS(on) – On-Resistance ( )
g fs – Transconductance (S)
80
25C
60
125C
40
20
0
0.017
0.014
VGS = 4.5 V
0.011
VGS = 10 V
0.008
0.005
0
10
20
30
40
50
60
0
20
40
VGS – Gate-to-Source Voltage (V)
80
100
ID – Drain Current (A)
Capacitance
Gate Charge
20
V GS – Gate-to-Source Voltage (V)
5000
4000
C – Capacitance (pF)
60
Ciss
3000
2000
1000
Coss
Crss
0
VDS = 30 V
ID = 75 A
16
12
8
4
0
0
12
24
36
48
VDS – Drain-to-Source Voltage (V)
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
60
0
20
40
60
80
100
120
Qg – Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
2-3
SUP/SUB75N06-12L
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
1.5
I S – Source Current (A)
r DS(on) – On-Resistance (W)
(Normalized)
VGS = 10 V
ID = 30 A
1.0
0.5
0
–50
TJ = 150C
10
TJ = 25C
1
–25
0
25
50
75
100
125
150
175
0.3
TJ – Junction Temperature (C)
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Safe Operating Area
100
300
80
100
I D – Drain Current (A)
I D – Drain Current (A)
Maximum Drain Current vs.
Case Temperature
60
40
10 ms
Limited
by rDS(on)
100 ms
10
1 ms
TC = 25C
Single Pulse
20
0
10 ms
100 ms
dc
1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70807
S-59182—Rev. B, 07-Sep-98