SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET V(BR)DSS (V) 60 rDS(on) () ID (A) 0.012 @ VGS = 10 V 75 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET SUP75N06-12L Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) TC = 100C 53 A IDM 180 Avalanche Current IAR 60 Power Dissipation V 75 ID Pulsed Drain Current Repetitive Avalanche Energya Unit L = 0.1 mH EAR 180 TC = 25C (TO-220AB and TO-263) PD 142b TA = 25C (TO-263)c PD 3.75c TJ, Tstg –55 to 175 C Limit Unit Operating Junction and Storage Temperature Range mJ W Parameter Symbol PCB Mount (TO-263)c Junction-to-Ambient 40 RthJA Free Air (TO-220AB) Junction-to-Case 62.5 RthJC C/W 1.05 Notes: a. Duty cycle 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 70807 S-59182—Rev. B, 07-Sep-98 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB75N06-12L Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, IDS = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 2 "100 VDS = 60 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V A 0.0085 VGS = 10 V, ID = 30 A, TJ = 125C rDS(on) 0.024 0.0105 VGS = 4.5 V, ID = 30 A, TJ = 125C VDS = 15 V, ID = 30 A W 0.014 0.0225 VGS = 4.5 V, ID = 30 A, TJ = 175C gfs 0.012 0.019 VGS = 10 V, ID = 30 A, TJ = 175C VGS = 4.5 V, ID = 30 A Forward Transconductancea mA A 150 75 VGS = 10 V, ID = 30 A a D i S O S R i Drain-Source On-State Resistance nA 0.03 25 60 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 3170 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 550 170 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 13.5 Turn-On Delay Timec td(on) 9 tr VDD = 30 V,, RL = 0.4 W 8 20 td(off) ID ] 75 A, VGEN = 10 V, RG = 2.5 W 77 150 20 40 Rise Timec Turn-Off Delay Timec Fall Timec 59 VDS = 30 V, V VGS = 10 V, V ID = 75 A tf 100 nC C 10 20 ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current Is 75 Pulsed Current ISM 180 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 75 A, VGS = 0 V trr IRM(REC) Qrr IF = 60 A A, di/d di/dt = 100 A/ A/ms 1.4 V 45 ns 2 A 0.045 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70807 S-59182—Rev. B, 07-Sep-98 SUP/SUB75N06-12L Vishay Siliconix Output Characteristics Transfer Characteristics 120 200 VGS = 10 thru 5 V 160 I D – Drain Current (A) I D – Drain Current (A) 90 120 4V 80 40 60 TC = 125C 30 3V 25C –55C 2V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.020 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 80 25C 60 125C 40 20 0 0.017 0.014 VGS = 4.5 V 0.011 VGS = 10 V 0.008 0.005 0 10 20 30 40 50 60 0 20 40 VGS – Gate-to-Source Voltage (V) 80 100 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 5000 4000 C – Capacitance (pF) 60 Ciss 3000 2000 1000 Coss Crss 0 VDS = 30 V ID = 75 A 16 12 8 4 0 0 12 24 36 48 VDS – Drain-to-Source Voltage (V) Document Number: 70807 S-59182—Rev. B, 07-Sep-98 60 0 20 40 60 80 100 120 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB75N06-12L Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.5 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.0 0.5 0 –50 TJ = 150C 10 TJ = 25C 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Safe Operating Area 100 300 80 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Drain Current vs. Case Temperature 60 40 10 ms Limited by rDS(on) 100 ms 10 1 ms TC = 25C Single Pulse 20 0 10 ms 100 ms dc 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70807 S-59182—Rev. B, 07-Sep-98