PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features Two-carrier WCDMA Performance • Broadband internal matching VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84MHz Bandwidth -30 ACPR Drain Efficiency (%) 50 40 -35 -40 IMD 30 -45 Efficiency 20 10 -50 -55 Gain 0 IMD (dBc) , ACPR (dBc) 60 35 40 45 • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 150 W - Linear Gain = 17 dB - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift -60 30 • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 32 W - Linear Gain = 17 dB - Efficiency = 29% - Intermodulation distortion = –37 dBc - Adjacent channel power = –39 dBc • Capable of handling 10:1 VSWR @ 30 V, 50 Output Power (dBm) 150 W (CW) output power • Pb-free, RoHS-compliant RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1250 mA, POUT = 32 W average ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 17 — dB Drain Efficiency hD — 29 — % Intermodulation Distortion IMD — –37 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1250 mA, POUT = 140 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 40 42 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W Operating Gate Voltage VDS = 30 V, IDQ = 1250 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70 °C, 150 W CW) RqJC 0.42 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFA091503EL V4 H-33288-6 Thermally-enhanced slotted flange, single-ended Tray PTFA091503EL V4 R250 H-33288-6 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs Data Sheet 2 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Typical Performance Broadband Performance CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.25A, PO UT = 70 W VDD = 30 V, IDQ = 1.25 A, ƒ = 960 MHz Efficiency (%), Gain (dB) 40 35 19 -10 18 -15 Return Loss 30 -5 -20 25 -25 Gain 20 Gain (dB) Efficiency 45 20 10 -35 13 940 950 960 40 30 15 14 930 50 16 -30 920 60 Gain 17 15 910 70 TCA S E = 25°C TCA S E = 90°C 970 20 Efficiency 10 Drain Efficiency (%) 0 Return Loss (dB) 50 0 35 40 Frequency (MHz) 45 50 55 Output Power (dBm) Power Sweep, CW Intermodulation Distortion vs. Output Power VDD = 30 V, ƒ = 960 MHz VDD = 30 V, IDQ = 1.25 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz -20 19 5th -50 -60 -70 IDQ = 1.625 A 18 3rd Order -40 Power Gain (dB) IMD (dBc) -30 IDQ = 1.25 A 17 16 IDQ = 0.875 A 7th -80 15 35 40 45 50 55 35 Output Power, PEP (dBm) Data Sheet 40 45 50 55 Output Power (dBm) 3 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Typical Performance (cont.) IS-95 CDMA Performance VDD = 30 V, IDQ = 1.25A, ƒ = 960 MHz -50 Alt1 1.98 MHz -60 10 -70 0 -80 50 a091503efl-v4/1 3 Broadband Circuit Impedance D RA T O RD G E NE jX R jX 910 1.08 –1.2 2.88 –1.0 920 1.12 –0.9 2.87 –0.7 930 1.15 –0.8 2.87 –0.6 940 1.16 –0.6 2.88 –0.4 950 1.21 –0.4 2.88 –0.3 960 1.28 –0.3 2.9 –0.1 970 1.33 –0.2 2.9 0.1 Z Load 910 MHz 0.1 0. 2 5 Rev. 03, 2010-08-11 4 0. 0. 4 of 11 0. Data Sheet 45 0 5 .0 0. 3 0.5 0.4 0.2 0.1 Z Source AV R 970 MHz W <--- MHz Z Load W DT OW ARD L OA GTHS EL EN Z Source W Frequency 0 .0 - W AV E LE NGTH S T OW A S 0 .1 G Z0 = 50 Ω R --> Z Load 0. 2 Z Source 0. 0. 45 Nornalized to 50 Ohms 5 45 0. 0 40 Output Power (dBm), Avg. 0. 35 4 30 5 ga091503eflV4x1 Apr. 21, 2009 3:59:01 PM 0.3 20 0.7 Adj 750 kHz 30 0. 6 -40 40 0. Drain Efficiency (%) Efficiency Adj. Ch. Power Ratio (dBc) -30 50 PTFA091503EL Confidential, Limited Internal Distribution Reference Circuit C804 100000 pF R804 1200 Ohm S2 8 R803 10 Ohm C801 100000 pF 3 R805 1000 Ohm TL116 TL104 C101 33 pF C106 10000 pF TL124 TL122 3 1 2 1 Out NC 3 6 7 5 2 3 2 4 3 E R802 1200 Ohm R102 5100 Ohm TL120 3 1 C802 100000 pF C S B TL121 VDD C805 100000 pF S1 1 C803 100000 pF 2 C107 10000 pF C108 4.7 pF R101 10 Ohm TL118 3 1 R103 10 Ohm TL133 TL117 2 R801 1300 Ohm C105 4710000 pF 1 In NC 4 S3 2 TL119 3 1 TL107 3 1 2 2 TL115 TL128 TL103 TL135 TL101 TL113 e r=3.48 H=20 mil RO/RO4350B1 TL106 TL114 TL112 TL109 TL108 C102 33 pF TL131 TL125 TL127 TL134 RF_IN TL136 3 1 a091503 el_bdin _08 -06-2010 TL137 2 2 TL129 1 TL123 2 3 TL132 TL126 GATE_DUT Pin A C103 5.1 pF C104 7.5 pF TL130 TL110 TL105 1 3 TL111 TL102 Reference circuit input schematic for ƒ = 960 MHz C201 10000000 pF TL225 TL202 1 C211 10000000 pF TL227 1 3 C203 1000000 pF TL226 TL201 3 3 1 2 2 C205 10000000 pF TL203 3 2 C204 10000000 pF 1 1 2 TL233 3 C207 10000000 pF 3 1 2 2 VDD C216 20000 pF TL214 TL232 C208 1.5 pF DUT Pin D TL207 TL223 TL212 DRAIN DUT Pin C TL204 4 TL218 TL206 TL215 TL220 TL228 2 TL216 C206 33 pF TL217 TL205 TL209 TL208 TL221 TL222 TL210 3 1 RF_OUT 4 TL211 C209 1.5 pF DUT Pin D TL219 C202 20000 pF TL234 e r=3.48 H=20 mil RO/RO4350B1 TL236 TL229 2 3 TL237 1 2 TL235 1 C210 10000000 pF TL224 2 3 3 1 2 C217 10000000 pF 3 C214 1000000 pF TL231 2 1 1 3 4 C213 10000000 pF 1 2 TL213 C215 10000000 pF a 091503 el_bdout _ 08-06 -2010 3 C212 10000000 pF VDD Reference circuit output schematic for ƒ = 960 MHz Data Sheet 5 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFA091503EL PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.098 λ, 78.27 Ω W = 0.762, L = 19.050 W = 30, L = 750 TL101 0.098 λ, 78.27 Ω W = 0.762, L = 19.050 W = 30, L = 750 TL102 0.004 λ, 51.58 Ω W = 1.651, L = 0.762 W = 65, L = 30 TL103 0.026 λ, 78.27 Ω W = 0.762, L = 5.080 W = 30, L = 200 TL104 0.001 λ, 36.29 Ω W = 2.794, L = 0.254 W = 110, L = 10 TL105 0.039 λ, 8.94 Ω W = 15.240, L = 6.731 W = 600, L = 265 TL106 0.034 λ, 51.58 Ω W = 1.651, L = 6.375 W = 65, L = 251 TL107 0.001 λ, 36.29 Ω W = 2.794, L = 0.254 W = 110, L = 10 TL108 0.007 λ, 51.58 Ω W = 1.651, L = 1.270 W = 65, L = 50 TL109, TL110, TL111, TL112 W = 1.651 W = 65 TL113, TL114, TL115, TL116, TL117 W = 0.762 W = 30 W1 = 2.794, W2 = 2.794, W3 = 2.540 W1 = 110, W2 = 110, W3 = 100 TL118, TL119 0.014 λ, 36.29 Ω TL120, TL121 0.011 λ, 36.29 Ω W1 = 2.794, W2 = 2.794, W3 = 2.032 W1 = 110, W2 = 110, W3 = 80 TL122, TL124 0.016 λ, 36.29 Ω W1 = 2.794, W2 = 2.794, W3 = 3.048 W1 = 110, W2 = 110, W3 = 120 TL123, TL137 0.015 λ, 8.94 Ω W1 = 15.240, W2 = 15.240, W3 = 2.540 W1 = 600, W2 = 600, W3 = 100 TL125 0.004 λ, 8.94 Ω W1 = 15.240, W2 = 15.240, W3 = 0.762 W1 = 600, W2 = 600, W3 = 30 TL126 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 TL127 W1 = 2.540, W2 = 15.240 W1 = 100, W2 = 600 TL128 0.003 λ, 78.27 Ω W = 0.762, L = 0.508 W = 30, L = 20 TL129 0.033 λ, 8.94 Ω W = 15.240, L = 5.715 W = 600, L = 225 TL130, TL132 0.040 λ, 51.58 Ω W = 1.651, L = 7.620 W = 65, L = 300 TL131 0.038 λ, 38.82 Ω W = 2.540, L = 7.112 W = 100, L = 280 TL133 0.007 λ, 78.27 Ω W = 0.762, L = 1.270 W = 30, L = 50 TL134 0.049 λ, 38.82 Ω W = 2.540, L = 9.144 W = 100, L = 360 TL135 0.015 λ, 78.27 Ω W = 0.762, L = 2.921 W = 30, L = 115 TL136 0.012 λ, 8.94 Ω W = 15.240, L = 2.032 W = 600, L = 80 Data Sheet 6 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Output TL201, TL224 0.014 λ, 28.85 Ω W1 = 3.810, W2 = 3.810, W3 = 2.540 W1 = 150, W2 = 150, W3 = 100 TL202, TL229 0.007 λ, 28.85 Ω W = 3.810, L = 1.270 W = 150, L = 50 W1 = 3.810, W2 = 1.829, W3 = 3.810, W4 = 1.829 W1 = 150, W2 = 72, W3 = 150, W4 = 72 W1 = 3.810, W2 = 3.810, W3 = 1.829 W1 = 150, W2 = 150, W3 = 72 W = 1.651 W = 65 TL203, TL230 TL204 0.010 λ, 28.85 Ω TL205, TL221, TL222, TL223 TL206 (taper) 0.044 λ, 10.17 Ω / 16.47 Ω W1 = 13.208, W2 = 7.620, L = 7.620 W1 = 520, W2 = 300, L = 300 TL207 0.004 λ, 51.58 Ω W = 1.651, L = 0.762 W = 65, L = 30 TL208, TL209 0.058 λ, 51.58 Ω W = 1.651, L = 10.922 W = 65, L = 430 TL210 0.015 λ, 51.58 Ω W = 1.651, L = 2.819 W = 65, L = 111 TL211, TL212 0.000 λ, 146.88 Ω W = 0.025, L = 0.025 W = 1, L = 1 TL213, TL233 0.093 λ, 28.85 Ω W = 3.810, L = 17.043 W = 150, L = 671 TL214, TL234 W1 = 0.000, W2 = 0.000, Offset = –0.002 W1 = 0, W2 = 6, Offset = –97 TL215 0.117 λ, 10.17 Ω W = 13.208, L = 20.320 W = 520, L = 800 TL216 0.014 λ, 38.82 Ω W = 2.540, L = 2.540 W = 100, L = 100 TL217 0.013 λ, 51.58 Ω W = 1.651, L = 2.540 W = 65, L = 100 TL218 0.012 λ, 10.17 Ω W = 13.208, L = 2.032 W = 520, L = 80 TL219, TL232 0.014 λ, 23.03 Ω W = 5.080, L = 2.540 W = 200, L = 100 W1 = 7.620, W2 = 0.025, W3 = 7.620 W4 = 0.025 W1 = 300, W2 = 1, W3 = 300, W4 = 1 W1 = 0.152, W2 = 0.152, W3 = 3.810 W1 = 6, W2 = 6, W3 = 150 W1 = 3.810, W2 = 3.810, W3 = 1.829 W1 = 150, W2 = 150, W3 = 72 TL220 TL225, TL236 0.019 λ, 126.18 Ω TL226, TL227, TL231, 0.010 λ, 28.85 Ω TL235, TL237 TL228 (taper) Data Sheet 0.036 λ, 16.47 Ω / 38.82 Ω W1 = 7.620, W2 = 2.540, L = 6.350 7 of 11 W1 = 300, W2 = 100, L = 250 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFA091503E Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower VDD C805 C801 R802 C803 R801 C211 C205 C201 C203 C204 + S1 S2 R804 C105 R102 C108 C107 C101 C106 R805 + C802 S3 R101 R803 VDD 10 µF C804 C207 C216 C208 R103 C102 RF_IN RF_OUT C206 C209 C202 C103 10 µF C104 + C210 C214 C212 C213 C217 PTFA091503 in_02 RO4350, .030 (62) C215 VDD PTFA091503 out_02 RO4350, .030 (62) a 091503 el_ CD _960MHZ _ 08-06- 2010 Reference circuit assembly diagram (not to scale)* Data Sheet 8 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Components Information Component Description Suggested Manufacturer P/N Input C101, C102 Chip capacitor, 33 pF ATC ATC100B330FW500XB C103 Chip capacitor, 5.1 pF ATC ATC100B5R1BW500XB C104 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB C105 Chip capacitor, 4.71 μF Digi-Key PCS3475CT-ND C106, C107 Chip capacitor, 0.1 μF ATC 200B103MW C108 Chip capacitor, 4.7 pF ATC ATC100B4R7BW500XB C801, C802, C803, C804, C805 Chip capacitor, 0.1 μF Digi-Key PCC104BCT-ND R101, R103, R803 Resistor, 10 Ω Digi-Key P10ECT-ND R102 Resistor, 5100 Ω Digi-Key P5.1KECT-ND R801 Resistor, 1300 Ω Digi-Key P1.3KGCT-ND R802 Resistor, 1200 Ω Digi-Key P1.2KGCT-ND R804 Resistor, 1200 Ω Digi-Key P1.2KECT-ND R805 Resistor, 1000 Ω Digi-Key P1.0KECT-ND S1 Transistor Digi-Key BCP5616TA-ND S2 Voltage Regulator Digi-Key LM78L05ACM-ND S3 Potentiometer, 2k Ω Digi-Key 3224W-202ECT-ND Capacitor, 10 μF Digi-Key 587-1818-2-ND Output C201, C204, C205, C210, C211, C213, C214, C217 C202, C216 Chip capacitor, 20000 pF ATC 200B203MW C203, C214 Chip capacitor, 1 μF Digi-Key 478-3993-2-ND C206 Chip capacitor, 33 pF ATC ATC100B330FW500XB C207, C215 Capacitor, 10 μF Garrett Electronics 281M5002106K C208, C209 Chip capacitor, 1.5 pF ATC ATC100B1R5BW500XB Data Sheet 9 of 11 Rev. 03, 2010-08-11 PTFA091503EL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 45° X 2.032 [45° X .080] 4X 30° 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) D C 4.889±.510 [.192±.020] D B CL 2X R1.626 [R.064] A E 9.398 [.370] 9.779 [.385] 19.558±.510 [.770±.020] F H -33288 - 6_ po _02 -18 - 2010 CL 2X 12.700 [.500] 2X 22.860 [.900] 27.940 [1.100] 22.352±.200 [.880±.008] 1.575 [.062] (SPH) 4.039 +.254 –. 127 010 [.159 +. –. 005 ] CL 34.036 [1.340] 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: A = gate; B = source; C = drain; D = drain voltage; E, F = N.C. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 03, 2010-08-11 PTFA091503EL V4 Confidential, Limited Internal Distribution Revision History: 2010-08-11 Previous Version: 2010-07-26, Data Sheet Page Subjects (major changes since last revision) 5-9 Updated reference circuit information Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-08-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 03, 2010-08-11