INFINEON PTFA211801E

PTFA211801E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally
matched LDMOS FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA211801E
Package H-36260-2
Features
Two-carrier WCDMA Drive-up
• Broadband internal matching
VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-25
30
Efficiency
-35
25
20
IM3
-40
15
-45
10
ACPR
-50
5
-55
Drain Efficiency (%)
-30
IM3 (dBc), ACPR (dBc)
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
0
34
36
38
40
42
44
46
48
• Pb-free and RoHS-compliant
Average Output Power (dBm)
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
14.5
15.5
—
dB
Drain Efficiency hD
26
27.5
—
%
Intermodulation Distortion
IMD
—
–36
–34
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 150 W average, ƒ = 2170 MHz
Characteristic
Gain Compression
Symbol
Min
Typ
Max
Unit
Gcomp
—
0.5
1.0
dB
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
15.5
—
dB
Drain Efficiency hD
—
38.5
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.05
—
W
Operating Gate Voltage
VDS = 28 V, IDQ = 1.2 A
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 150 W CW)
RqJC
0.31
Data Sheet 2 of 9
Unit
°C/W
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
PTFA211801E V5
H-36260-2
Thermally-enhanced slotted flange, single-ended
Tray
PTFA211801E V5 R250
H-36260-2
Thermally-enhanced slotted flange, single-ended
Tape & Reel
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Various Biases
Broadband Performance
VDD = 28 V, IDQ = 1.2 A, PO UT = 45.0 dBm CW
30
-35
25
1.3 A
1.4 A
-40
-45
1.2 A
1.1 A
-50
-5
Efficiency
-10
Return Loss
20
15
-15
-20
Gain
10
-25
5
-55
34
36
38
40
42
44
46
2070
48
-30
2090
2110
2130
2150
2170
2190
2210
Frequency (MHz)
Output Power, Avg. (dBm)
Data Sheet Input Return Loss (dB)
-30
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
VDD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show IDQ
3 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1.2 A, ƒ = 2170 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 2170 MHz
15
34
14
21
13
40
60
80
Gain
40
15
30
14
20
13
10
12
8
20
50
16
Gain (dB)
Gain
0
0
0
100 120 140 160 180
20
40
60
Output Power (W)
80
100 120 140 160 180
Output Power (W)
Two-tone Drive-up
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V, IDQ = 1.2 A,
ƒ = 2140 MHz, tone spacing = 1 MHz
VDD = 28 V IDQ = 1.2 A, ƒ = 2140 MHz,
PO UT = 51 dBm PEP
-20
-20
-25
Intermodulation Distortion (dBc)
Intermodulation Distortion (dBc)
60
Efficiency
17
47
Drain Efficiency (%)
Gain (dB)
16
18
60
Efficiency
TCA S E = 25°C
TCA S E = 90°C
3rd Order
-30
-35
-40
5th
-45
7th
-50
-55
0
5
10
15
20
25
30
35
-25
40
Efficiency
-30
35
-35
IM5
-40
IM3
30
25
-45
20
-50
15
-55
10
IM7
-60
5
-65
0
38
40
Tone Spacing (MHz)
Data Sheet 45
Drain Efficiency (%)
17
42
46
50
54
Output Power, PEP (dBm)
4 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Voltage Sweep
10
-45
5
ACPR Up
0
44
46
-45
30
31
32
10
33
Supply Voltage (V)
a211801ef
Nornalized to 50 Ohms
Z0 = 50 Ω
D
R -->
RD G
E NE
RA T
O
jX
2070
7.2
–0.5
1.5
2.3
2110
7.8
–0.2
1.4
2.6
2140
8.4
–0.0
1.4
2.8
2170
9.1
0.0
1.4
3.0
2210
10.0
–0.2
1.3
3.4
Z Source
2210 MHz
2070 MHz
0.1
0. 2
5 of 9
Rev. 06, 2011-01-11
45
0.
05
0. 3
0.
Data Sheet 0.
4
0.5
R
0.4
jX
0.3
R
0.2
MHz
2070 MHz
0 .0
2210 MHz
E
W AV
<---
Z Load W
Z Load
W ARD L OA D T HS T O
L E NG
Z Source W
- W AV E LE NGTH
S T OW
A
S
0 .1
G
0.1
Z Load
0.2
Z Source
Frequency
15
Gain
ga211801ef
Apr. 5,232005
3:16:59 PM
48
24 25 26 27 28 29
Average Output Power (dBm)
Broadband Circuit Impedance
-40
5
42
20
0. 4 0
45
40
-35
0.
0
38
25
0.
36
-30
3
34
30
0.
-50
-25
0. 7
15
35
IM3 Up
0. 6
20
-40
-20
40
Efficiency
5
25
-15
0.
Gain
ACPR Low
45
4
-35
30
3rd Order IMD (dBc)
Efficiency
-10
Gain (dB), Drain Efficiency (%)
35
Drain Efficiency (%), Gain (dB)
-30
IDQ = 1.2 A, ƒ = 2140 MHz, PO UT = 51 dBm PEP,
tone spacing = 1 MHz
0.
Adjacent Channel Power Ratio (dB)
VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
PTFA211801E
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3K
R1
1.2K 
QQ1
LM7805
V DD
Q1
BCP56
C2
0.001µF C3
0.001µF
R3
2K 
R4
2K 
R5
10
C4
10µF
35V
R8
5.1K 
R6
5.1K 
R7
5.1K
C5
0.1µF
C6
0.1µF
C7
.01µF
C8
9.1pF
C12
9.1pF
7
R9
10 
C10
8.2pF
RF_IN
1
2
C13
0.02µF
C14
1µF
8
C21
8.2pF
DUT
3
C9
0.5pF
4
5
6
C11
1.5pF
V DD
C15
22µF
50V
10
11
12
13
14
RF_OUT
C20
0.3pF
9
C16
9.1pF
C17
0.02µF
C18
1µF
A211801ef _sch
C19
22µF
50V
Reference circuit schematic for ƒ = 2140 MHz
Electrical Characteristics at 2140 MHz
Transmission
Electrical Dimensions: L x W (mm) Dimensions: L x W (in.)
Line
Characteristics l1
0.097 l, 50.0 W 7.37 x 1.40
0.290 x 0.055
l2
0.267 l, 50.0 W 19.86 x 1.40
0.782 x 0.055
l3
0.136 l, 42.0 W 10.24 x 1.85
0.403 x 0.073
l4
0.087 l, 42.0 W
6.50 x 1.85
0.256 x 0.073
l5
0.018 l, 11.4 W 1.24 x 10.24
0.049 x 0.403
l6
0.077 l, 6.9 W 5.23 x 17.78
0.206 x 0.700
l7
0.207 l, 48.0 W 15.70 x 1.50
0.618 x 0.059
l8, l9
0.256 l, 45.0 W 19.30 x 1.65
0.760 x 0.065
l10
0.087 l, 5.0 W 5.84 x 25.40
0.230 x 1.000
l11 (taper)
0.073 l, 5.0 W / 40.0 W 5.59 x 25.40 / 1.98
0.220 x 1.000 / 0.078
l12
0.019 l, 40.0 W 1.45 x 1.98
0.057 x 0.078
l13
0.087 l, 50.0 W
6.65 x 1.40
0.262 x 0.055
l14
0.403 l, 50.0 W 30.73 x 1.40
1.210 x 0.055
Data Sheet 6 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
+
10
35V
LM
RF_IN
RF_OUT
A211801ef _assy
Reference circuit assembly diagram (not to scale)*
Circuit Assembly Information
DUT
PTFA211801E
LDMOS Transistor
PCB
0.76 mm [.030"] thick, er = 4.5
Rogers TMM4
2 oz. copper
Component Description
Suggested Manufacturer
P/N C1, C2, C3
Capacitor, 0.001 µF
Digi-Key
PCC1772CT-ND
C4
Tantalum capacitor, 10 µF, 35 V
Digi-Key
PCS6106TR-ND
C5, C6
Capacitor, 0.1 µF
Digi-Key
PCC104BCT
C7
Capacitor, 0.01 µF
ATC
200B103
C8, C12, C16
Ceramic capacitor, 9.1 pF
ATC
100B 9R1
C9
Ceramic capacitor, 0.5 pF
ATC
100B 0R5
C10, C21
Ceramic capacitor, 8.2 pF
ATC
100B 8R2
C11
Ceramic capacitor, 1.5 pF
ATC
100B 1R5
C13, C17
Ceramic capacitor, 0.02 µF
ATC
200B 203
C14, C18
Ceramic capacitor, 1 µF
ATC
920C105
C15, C19
Electrolytic capacitor, 22 µF, 50 V
Digi-Key
PCE3374CT-ND
C20
Ceramic capacitor, 0.3 pF
ATC
100B 0R3
Q1
Transistor
Infineon Technologies
BCP56
QQ1
Voltage regulator
National Semiconductor
LM7805
R1
Chip resistor, 1.2 k W
Digi-Key
P1.2KGCT-ND
R2
Chip resistor, 1.3 k W
Digi-Key
P1.3KGCT-ND
R3
Chip resistor, 2 k W
Digi-Key
P2KECT-ND
R4
Potentiometer, 2 k W
Digi-Key
3224W-202ETR-ND
R5, R9
Chip resistor, 10 W
Digi-Key
P10ECT-ND
R6, R7, R8
Chip resistor, 5.1 k W
Digi-Key
P5.1KECT-ND
* Gerber Files for this circuit available on request
Data Sheet 7 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
2X 12.70
[.500]
45° X 2.031
45° X [.080]
4.83±0.50
[.190±.020]
C
L
D
4X R1.52
[R.060]
S
23.37±0.51
[.920±.020]
10
LID 13.21+0.
–0.15
+.004
[.520 –.006 ]
CL
13.72
[.540]
2X R1.63
[R.064]
G
H -36260 - 2_ po _02 -18 - 2010
27.94
[1.100]
1.02
[.040]
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
C
L
34.04
[1.340]
SPH 1.57
[.062]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 8 of 9
Rev. 06, 2011-01-11
PTFA211801 E V5
Confidential, Limited Internal Distribution
Revision History:
2011-01-11
Previous Version: 2010-08-04, Data Sheet
Page
Subjects (major changes since last revision)
1
Updated ESD protection feature
All Removed earless package
All Data Sheet reflects released product specifications
Data Sheet
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Edition 2011-01-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2005 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet 9 of 9
Rev. 06, 2011-01-11