PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Features Two-carrier WCDMA Drive-up • Broadband internal matching VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 30 Efficiency -35 25 20 IM3 -40 15 -45 10 ACPR -50 5 -55 Drain Efficiency (%) -30 IM3 (dBc), ACPR (dBc) • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52% • Integrated ESD protection • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power 0 34 36 38 40 42 44 46 48 • Pb-free and RoHS-compliant Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.5 15.5 — dB Drain Efficiency hD 26 27.5 — % Intermodulation Distortion IMD — –36 –34 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution RF Characteristics (cont.) CW Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 150 W average, ƒ = 2170 MHz Characteristic Gain Compression Symbol Min Typ Max Unit Gcomp — 0.5 1.0 dB Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15.5 — dB Drain Efficiency hD — 38.5 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RqJC 0.31 Data Sheet 2 of 9 Unit °C/W Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Package Description Shipping PTFA211801E V5 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray PTFA211801E V5 R250 H-36260-2 Thermally-enhanced slotted flange, single-ended Tape & Reel Typical Performance (data taken in a production test fixture) Two-carrier WCDMA at Various Biases Broadband Performance VDD = 28 V, IDQ = 1.2 A, PO UT = 45.0 dBm CW 30 -35 25 1.3 A 1.4 A -40 -45 1.2 A 1.1 A -50 -5 Efficiency -10 Return Loss 20 15 -15 -20 Gain 10 -25 5 -55 34 36 38 40 42 44 46 2070 48 -30 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) Output Power, Avg. (dBm) Data Sheet Input Return Loss (dB) -30 Gain (dB), Efficiency (%) 3rd Order IMD (dBc) VDD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, series show IDQ 3 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep, CW Conditions Power Sweep, CW Conditions VDD = 30 V, IDQ = 1.2 A, ƒ = 2170 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 2170 MHz 15 34 14 21 13 40 60 80 Gain 40 15 30 14 20 13 10 12 8 20 50 16 Gain (dB) Gain 0 0 0 100 120 140 160 180 20 40 60 Output Power (W) 80 100 120 140 160 180 Output Power (W) Two-tone Drive-up Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 28 V IDQ = 1.2 A, ƒ = 2140 MHz, PO UT = 51 dBm PEP -20 -20 -25 Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) 60 Efficiency 17 47 Drain Efficiency (%) Gain (dB) 16 18 60 Efficiency TCA S E = 25°C TCA S E = 90°C 3rd Order -30 -35 -40 5th -45 7th -50 -55 0 5 10 15 20 25 30 35 -25 40 Efficiency -30 35 -35 IM5 -40 IM3 30 25 -45 20 -50 15 -55 10 IM7 -60 5 -65 0 38 40 Tone Spacing (MHz) Data Sheet 45 Drain Efficiency (%) 17 42 46 50 54 Output Power, PEP (dBm) 4 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Voltage Sweep 10 -45 5 ACPR Up 0 44 46 -45 30 31 32 10 33 Supply Voltage (V) a211801ef Nornalized to 50 Ohms Z0 = 50 Ω D R --> RD G E NE RA T O jX 2070 7.2 –0.5 1.5 2.3 2110 7.8 –0.2 1.4 2.6 2140 8.4 –0.0 1.4 2.8 2170 9.1 0.0 1.4 3.0 2210 10.0 –0.2 1.3 3.4 Z Source 2210 MHz 2070 MHz 0.1 0. 2 5 of 9 Rev. 06, 2011-01-11 45 0. 05 0. 3 0. Data Sheet 0. 4 0.5 R 0.4 jX 0.3 R 0.2 MHz 2070 MHz 0 .0 2210 MHz E W AV <--- Z Load W Z Load W ARD L OA D T HS T O L E NG Z Source W - W AV E LE NGTH S T OW A S 0 .1 G 0.1 Z Load 0.2 Z Source Frequency 15 Gain ga211801ef Apr. 5,232005 3:16:59 PM 48 24 25 26 27 28 29 Average Output Power (dBm) Broadband Circuit Impedance -40 5 42 20 0. 4 0 45 40 -35 0. 0 38 25 0. 36 -30 3 34 30 0. -50 -25 0. 7 15 35 IM3 Up 0. 6 20 -40 -20 40 Efficiency 5 25 -15 0. Gain ACPR Low 45 4 -35 30 3rd Order IMD (dBc) Efficiency -10 Gain (dB), Drain Efficiency (%) 35 Drain Efficiency (%), Gain (dB) -30 IDQ = 1.2 A, ƒ = 2140 MHz, PO UT = 51 dBm PEP, tone spacing = 1 MHz 0. Adjacent Channel Power Ratio (dB) VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW PTFA211801E Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K R1 1.2K QQ1 LM7805 V DD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2K R4 2K R5 10 C4 10µF 35V R8 5.1K R6 5.1K R7 5.1K C5 0.1µF C6 0.1µF C7 .01µF C8 9.1pF C12 9.1pF 7 R9 10 C10 8.2pF RF_IN 1 2 C13 0.02µF C14 1µF 8 C21 8.2pF DUT 3 C9 0.5pF 4 5 6 C11 1.5pF V DD C15 22µF 50V 10 11 12 13 14 RF_OUT C20 0.3pF 9 C16 9.1pF C17 0.02µF C18 1µF A211801ef _sch C19 22µF 50V Reference circuit schematic for ƒ = 2140 MHz Electrical Characteristics at 2140 MHz Transmission Electrical Dimensions: L x W (mm) Dimensions: L x W (in.) Line Characteristics l1 0.097 l, 50.0 W 7.37 x 1.40 0.290 x 0.055 l2 0.267 l, 50.0 W 19.86 x 1.40 0.782 x 0.055 l3 0.136 l, 42.0 W 10.24 x 1.85 0.403 x 0.073 l4 0.087 l, 42.0 W 6.50 x 1.85 0.256 x 0.073 l5 0.018 l, 11.4 W 1.24 x 10.24 0.049 x 0.403 l6 0.077 l, 6.9 W 5.23 x 17.78 0.206 x 0.700 l7 0.207 l, 48.0 W 15.70 x 1.50 0.618 x 0.059 l8, l9 0.256 l, 45.0 W 19.30 x 1.65 0.760 x 0.065 l10 0.087 l, 5.0 W 5.84 x 25.40 0.230 x 1.000 l11 (taper) 0.073 l, 5.0 W / 40.0 W 5.59 x 25.40 / 1.98 0.220 x 1.000 / 0.078 l12 0.019 l, 40.0 W 1.45 x 1.98 0.057 x 0.078 l13 0.087 l, 50.0 W 6.65 x 1.40 0.262 x 0.055 l14 0.403 l, 50.0 W 30.73 x 1.40 1.210 x 0.055 Data Sheet 6 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Reference Circuit (cont.) + 10 35V LM RF_IN RF_OUT A211801ef _assy Reference circuit assembly diagram (not to scale)* Circuit Assembly Information DUT PTFA211801E LDMOS Transistor PCB 0.76 mm [.030"] thick, er = 4.5 Rogers TMM4 2 oz. copper Component Description Suggested Manufacturer P/N C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5, C6 Capacitor, 0.1 µF Digi-Key PCC104BCT C7 Capacitor, 0.01 µF ATC 200B103 C8, C12, C16 Ceramic capacitor, 9.1 pF ATC 100B 9R1 C9 Ceramic capacitor, 0.5 pF ATC 100B 0R5 C10, C21 Ceramic capacitor, 8.2 pF ATC 100B 8R2 C11 Ceramic capacitor, 1.5 pF ATC 100B 1R5 C13, C17 Ceramic capacitor, 0.02 µF ATC 200B 203 C14, C18 Ceramic capacitor, 1 µF ATC 920C105 C15, C19 Electrolytic capacitor, 22 µF, 50 V Digi-Key PCE3374CT-ND C20 Ceramic capacitor, 0.3 pF ATC 100B 0R3 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor, 1.2 k W Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3 k W Digi-Key P1.3KGCT-ND R3 Chip resistor, 2 k W Digi-Key P2KECT-ND R4 Potentiometer, 2 k W Digi-Key 3224W-202ETR-ND R5, R9 Chip resistor, 10 W Digi-Key P10ECT-ND R6, R7, R8 Chip resistor, 5.1 k W Digi-Key P5.1KECT-ND * Gerber Files for this circuit available on request Data Sheet 7 of 9 Rev. 06, 2011-01-11 PTFA211801E Confidential, Limited Internal Distribution Package Outline Specifications Package H-36260-2 2X 12.70 [.500] 45° X 2.031 45° X [.080] 4.83±0.50 [.190±.020] C L D 4X R1.52 [R.060] S 23.37±0.51 [.920±.020] 10 LID 13.21+0. –0.15 +.004 [.520 –.006 ] CL 13.72 [.540] 2X R1.63 [R.064] G H -36260 - 2_ po _02 -18 - 2010 27.94 [1.100] 1.02 [.040] LID 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] C L 34.04 [1.340] SPH 1.57 [.062] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 06, 2011-01-11 PTFA211801 E V5 Confidential, Limited Internal Distribution Revision History: 2011-01-11 Previous Version: 2010-08-04, Data Sheet Page Subjects (major changes since last revision) 1 Updated ESD protection feature All Removed earless package All Data Sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2011-01-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2005 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 06, 2011-01-11