INFINEON PTFB192503EL

PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Features
Two-carrier WCDMA 3GPP
• Broadband internal input and output matching
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
• Enhanced for use in DPD error correction systems
50
Gain
Gain (dB)
19
40
18
30
17
20
Efficiency
16
10
15
0
33
35
37
39
41
43
45
47
Drain Efficiency (%)
20
• Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
49
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Output Power (dBm)
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1.9 A, POUT = 50 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
19
—
dB
Drain Efficiency hD
—
28
—
%
Intermodulation Distortion
IMD
—
–35
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.9 A, POUT = 220 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
17
18
—
dB
Drain Efficiency hD
40
41.5
—
%
Intermodulation Distortion
IMD
—
–29
–27
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.03
—
W
Operating Gate Voltage
VDS = 30 V, IDQ = 1.9 A
VGS
2.3
2.8
3.3
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 200 W CW)
RqJC
0.262
°C/W
Ordering Information
Type and Version
Package Type
Package Description
Shipping
PTFB192503EL V1
H-33288-6
Thermally-enhanced slotted flange, single-ended
Tray
PTFB192503EL V1 R250
H-33288-6
Thermally-enhanced slotted flange, single-ended
Tape & Reel, 250 pcs
PTFB192503FL V2
H-34288-4/2
Thermally-enhanced earless flange, single-ended
Tray
PTFB192503FL V2 R250
H-34288-4/2
Thermally-enhanced earless flange, single-ended
Tape & Reel, 250 pcs
Data Sheet 2 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
VDD = 30 V, IDQ = 1.85 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
-20
-30
IMD (dBc)
-35
-40
Lower
Upper
Lower
Upper
Lower
Upper
-45
-50
20
-45
15
-50
-60
39
41
43
45
47
25
Efficiency
-40
-60
37
30
IMD Low
-35
-55
35
35
IMD Up
-30
-55
33
40
-25
IMD & ACPR (dBc)
1990
1990
1960
1960
1930
1930
5
0
33
49
10
ACPR
Drain Efficiency (%)
-25
35
37
39
41
43
45
47
49
Output Power (dBm)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
VDD = 30 V, IDQ = 1.85 A, PO UT = 110 W
Gain (dB)
55
18
45
17
35
Efficiency
16
25
15
15
14
5
38
40
42
44
46
48
50
52
-10
50
-15
Efficiency
45
-20
40
-25
35
-30
IMD3
30
-35
25
-40
Gain
20
-45
15
54
-50
1890
1920
1950
1980
2010
Frequency (MHz)
Output Power (dBm)
Data Sheet -5
RL
55
Gain (dB) / Efficiency (%)
Gain
19
60
Return Loss (dB), IMD (dBc)
65
Drain Efficiency (%)
20
3 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
Two-tone Drive-up
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
40
-30
35
-35
30
-40
25
20
Efficiency
-50
15
-55
10
-60
5
IMD 3
-65
37
39
41
43
45
47
49
51
53
Gain
19
18
30
17
20
Efficiency
10
15
0
37
55
43
45
47
49
51
53
55
Two-tone Voltage Sweep
-20
Gain (dB) / Efficiency (%)
1930 MHz
IMD (dBc)
41
IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
Output Power = 53.3 dBm
VDD = 30 V, IDQ = 1.85 A, Tone Spacing = 1 MHz
1960 MHz
1990 MHz
39
Output Power, PEP (dBm)
Two-tone Drive-up
at Selected Frequencies
-30
40
16
0
Output Power, PEP (dBm)
50
IMD3
-40
-50
-60
60
-15
50
-20
Efficiency
40
-25
IMD3
30
-30
Gain
20
-35
10
35
40
45
50
55
-40
22
24
26
28
30
32
34
Supply Voltage (V)
Output Power, PEP (dBm)
Data Sheet 3rd Order IMD (dBc)
-45
20
Efficiency (%)
45
-25
Gain (dB)
-20
Efficiency (%)
IMD (dBc)
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
4 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW
Gain & Efficiency vs. Output Power
CW Performance
Gain vs. Output Power
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
VDD = 30 V, ƒ = 1990 MHz
60
50
Gain
19
40
18
30
17
16
20
+85°C
+25°C
–10° C
Efficiency
IDQ = 2.5 A
Power Gain (dB)
Gain (dB)
20
20
Drain Efficiency (%)
21
0
45
IDQ = 1.85 A
18
IDQ = 1.2 A
10
15
40
19
50
17
55
40
45
50
55
Output Power (dBm)
Output Power (dBm)
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
-20
IMD (dBc)
-30
-40
IMD3
-50
IMD5
-60
IMD7
-70
35
40
45
50
55
Output Power, PEP (dBm)
Data Sheet 5 of 15
Rev. 09, 2010-11-09
0.
Nornalized to 50 Ohms
G
0.4
0.3
0.2
0.1
0.1
1900 MHz
E
Z Load W
Z Source
jX
R
jX
1900
2.63
–3.92
1.36
–4.49
1930
2.56
–3.67
1.33
–4.35
1960
2.48
–3.44
1.31
–4.21
1990
2.42
–3.21
1.28
–4.07
2020
2.35
–2.98
1.26
–3.93
0. 3
0.
4
0. 6
0.
5
0.
See next page for reference circuit information
0. 2
05
R
0.
MHz
45
WAV
<---
Z Source W
2020 MHz
Z Load
S
Frequency
Z0 = 50 Ω
0.0
Z Load
0 .1
D
Z Source
0. 2
- W AV E LE NGT H
S T OW
A RD
GEN
E RA
T OR
--->
D
OA
L
D
AR
W
O
T
S
H
T
L E NG
3
Broadband Circuit Impedance
0.
Confidential, Limited Internal Distribution
PTFB192503EL
PTFB192503FL
Data Sheet 6 of 15
Rev. 09, 2010-11-09
PTFB192503EL/FL_INPUT
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit
C803
1000 pF
S2
8
C802
1000 pF
4
In
2
1
Out
NC
NC
3
6
7
5
R801
100 Ohm
C801
1000 pF
R803
10 Ohm
R805
1200 Ohm
S3
2 C
1
B
R804
1300 Ohm
4
S
3 E
S1
3
R802
10 Ohm
TL110
TL112
TL127
TL121
2
TL135
RF_IN
TL101
TL109
TL124
TL122
TL108
3
1
TL106
2
3
1
TL115
TL113
TL128
R101
10 Ohm TL118
C105
2200000 pF
C107
8.2 pF
2
TL114
3
1
C103
10000000 pF
2
3
1
C101
10 pF
TL126
TL103
TL129
TL102
TL104
TL119
2
3
1
GATE DUT
(Pin G)
4
TL111
TL136
C104
10000000 pF
2
3
1
TL125
C106
2200000 pF
TL134
C102
8.2 pF
2
3
1
TL116
TL133
TL132
er=3.48
H=30 mil
RO/RO4350B1
TL120
2
R102
10 Ohm
3
TL117
TL107
2
TL123
3
1
TL105
b 1 9 2 5 0 3 e f l _ b d i n _ 0 8 - 2 3 - 2 0 1 0
1
TL131
TL130
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet 7 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C202
10000000 pF
TL209
C206
100000 pF
TL220
2
3
C210
2200000 pF
TL203
3
2
C208
1000000 pF
1
TL202
3
2
1
TL215
TL212
3
2
1
1
DUT
(Pin V)
C213
1.1 pF
TL232
TL210
TL205
VDD
C204
10000000 pF
TL207
DRAIN DUT
(Pin D)
TL216
2
3
1
TL234
TL235
2
TL211
TL231
TL230
TL221
TL229
TL222
C207
10 pF
TL223
TL226
TL225
TL227
TL236
TL228
TL224
TL204
3
1
RF_OUT
4
TL233
DUT
(Pin V)
C212
1.1 pF
C205
10000000 pF
TL206
TL208
3
1
2
1
3
1
er=3.48
H=30 mil
RO/RO4350B1
TL201
TL214
2
C203
10000000 pF
C201
100000 pF
TL213
2
1
3
C211
2200000 pF
2
TL217
TL219
b 1 9 2 5 0 3 e f l _ b d o u t _ 0 8 - 2 3 - 2 0 1 0
2
TL218
3
1
3
C209
1000000 pF
VDD
Reference circuit output schematic for ƒ = 1990 MHz
See next page for more reference circuit information
Data Sheet 8 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT
PTFB192503EL or PTFB192503FL PCB
0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 1990 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Input
TL224
0.000 λ, 144.35 Ω W1 = 0.025, W2 = 0.025, W3 = 0.025
W1 = 1, W2 = 1, W3 = 1
TL101
0.037 λ, 51.58 Ω W = 1.651, L = 3.358
W = 65, L = 132
TL102
0.053 λ, 9.67 Ω W = 13.970, L = 4.470
W = 550, L = 176 TL103
0.033 λ, 51.58 Ω W = 1.651, L = 3.018
W = 65, L = 119
TL104
W1 = 13.970, W2 = 0.762, W3 = 13.970, W4 = 0.762 W1 = 550, W2 = 30, W3 = 550, W4 = 30
TL105, TL106
W = 0.762
W = 30
W1 = 0.762, W2 = 0.762, W3 = 1.016
W1 = 30, W2 = 30, W3 = 40
TL107, TL108
0.011 λ, 78.27 Ω TL109
W1 = 1.651, W2 = 2.032
W1 = 65, W2 = 80
TL110, TL130
0.015 λ, 38.82 Ω W = 2.540, L = 1.321
W = 100, L = 52
TL111
0.071 λ, 92.53 Ω W = 0.508, L = 6.756
W = 20, L = 266
TL112
0.016 λ, 68.02 Ω W = 1.016, L = 1.524
W = 40, L = 60
TL113, TL133
0.024 λ, 78.27 Ω W = 0.762, L = 2.286
W = 30, L = 90
TL114, TL125
0.023 λ, 78.27 Ω W = 0.762, L = 2.159
W = 30, L = 85
TL115, TL116
0.001 λ, 68.02 Ω W = 1.016, L = 0.127
W = 40, L = 5
TL117, TL118
0.014 λ, 78.27 Ω W = 0.762, L = 1.270
W = 30, L = 50
TL119
0.024 λ, 9.67 Ω W = 13.970, L = 1.981
W = 550, L = 78
TL120, TL121
0.007 λ, 68.02 Ω W = 1.016, L = 0.686
W = 40, L = 27
TL122, TL123
0.125 λ, 78.27 Ω W = 0.762, L = 11.684
W = 30, L = 460
TL124
0.008 λ, 45.17 Ω W = 2.032, L = 0.762
W = 80, L = 30
TL126 (taper)
0.030 λ, 9.67 Ω / 51.58 Ω W1 = 13.970, W2 = 1.651, L = 2.515
W1 = 550, W2 = 65, L = 99
TL127, TL132
0.011 λ, 68.02 Ω W1 = 1.016, W2 = 1.016, W3 = 1.016
W1 = 40, W2 = 40, W3 = 40
TL128
0.022 λ, 78.27 Ω W1 = 0.762, W2 = 0.762, W3 = 2.032
W1 = 30, W2 = 30, W3 = 80
TL129
0.077 λ, 9.67 Ω W = 13.970, L = 6.502
W = 550, L = 256
TL131
0.016 λ, 68.02 Ω W = 1.016, L = 1.524
W = 40, L = 60
TL134
0.022 λ, 78.27 Ω W1 = 0.762, W2 = 0.762, W3 = 2.032
W1 = 30, W2 = 30, W3 = 80
TL135, TL136
0.016 λ, 92.53 Ω W1 = 0.508, W2 = 0.508, W3 = 1.524
W1 = 20, W2 = 20, W3 = 60
table continued on page 10
Data Sheet 9 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1990 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Output
TL201, TL202, TL203, TL213 0.026 λ, 34.08 Ω W1 = 3.048, W2 = 3.048, W3 = 2.286
W1 = 120, W2 = 120, W3 = 90
TL204
0.012 λ, 51.58 Ω W = 1.651, L = 1.118
W = 65, L = 44
TL205
0.084 λ, 6.86 Ω W = 20.320, L = 6.985
W = 800, L = 275
TL206
0.029 λ, 23.60 Ω W = 4.928, L = 2.540
W = 194, L = 100
TL207
0.029 λ, 23.79 Ω W = 4.877, L = 2.540
W = 192, L = 100
TL208, TL209, TL212
0.034 λ, 34.08 Ω W1 = 3.048, W2 = 3.048, W3 = 3.048
W1 = 120, W2 = 120, W3 = 120
W1 = 12.700, W2 = 17.780
W1 = 500, W2 = 700
TL210
TL211 (taper)
0.019 λ, 6.86 Ω / 8.37 Ω W1 = 20.320, W2 = 16.383, L = 1.575
W1 = 800, W2 = 645, L = 62
TL214, TL220
0.009 λ, 34.08 Ω W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
TL215, TL217
0.118 λ, 34.08 Ω W = 3.048, L = 10.516
W = 120, L = 414
TL216
0.019 λ, 34.08 Ω W = 3.048, L = 1.702
W = 120, L = 67
TL218
0.025 λ, 34.08 Ω W = 3.048, L = 2.210
W = 120, L = 87
TL219
0.034 λ, 34.08 Ω W1 = 3.048, W2 = 3.048, W3 = 3.048
W1 = 120, W2 = 120, W3 = 120
TL221 (taper)
0.041 λ, 8.37 Ω / 19.45 Ω W1 = 16.383, W2 = 6.248, L = 3.429
W1 = 645, W2 = 246, L = 135
TL222
0.007 λ, 51.58 Ω W = 1.651, L = 0.635
W = 65, L = 25
TL223
0.011 λ, 45.17 Ω W = 2.032, L = 1.016
W = 80, L = 40
W = 0.002, ANG = 90, R = 0.002
W = 2, ANG = 3543307, R = 70
W = 1.651, L = 1.270
W = 65, L = 50
TL224, TL225, TL226, TL228
TL227
0.014 λ, 51.58 Ω TL229 (taper)
0.019 λ, 19.45 Ω / 51.58 Ω W1 = 6.248, W2 = 1.651, L = 1.651
W1 = 246, W2 = 65, L = 65
TL230
0.000 λ, 19.45 Ω W = 6.248, L = 0.025
W = 246, L = 1
TL231
0.000 λ, 8.37 Ω W = 16.383, L = 0.025
W = 645, L = 1
TL232, TL233
0.000 λ, 146.88 Ω W = 0.025, L = 0.025
W = 1, L = 1
W1 = 20.320, W2 = 0.025, W3 = 20.320, W4 = 0.025 W1 = 800, W2 = 1, W3 = 800,
W4 = 1
TL234
TL235
0.005 λ, 6.86 Ω W = 20.320, L = 0.406
W = 800, L = 16
TL236
0.014 λ, 51.58 Ω W = 1.651, L = 1.270
W = 65, L = 50
Data Sheet 10 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
PTFB192503EL/FL_02
Test Fixture Part No. LTN/PTFB192503EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .030
(60)
C803
C802
R801
VDD
RO4350, .030
R804
C801
R805
S3
C206
C210 C208
C202
S1
+
R802
(60)
VDD
S2
R803
+
C213
R101
C204
10 µF
C107
C105
C103
RF_IN
RF_OUT
C101
C207
C104
C106
C102
C205
+
C212
10 µF
R102
VDD
C203
C211 C209
C201
PTFB192503_IN_02
PTFB192503_OUT_02
b 1 9 2 5 0 3 e f l _ C D _ 1 1 - 0 9 - 2 0 1 0
Reference circuit assembly diagram (not to scale)
Data Sheet 11 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component Description
Suggested Manufacturer
P/N Input
C101
Chip capacitor, 10 pF
ATC
ATC100B100FW500XB
C102, C107
Chip capacitor, 8.2 pF
ATC
ATC100A8R2BW150XB
C103, C104
Capacitor, 10 μF
Digi-Key
587-1818-2-ND
C105, C106
Chip capacitor, 2.2 μF
Digi-Key
445-1447-2-ND
C801, C802, C803
Capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
R101, R102, R802, R803
Resistor, 10 W Digi-Key
P10ECT-ND
R801
Resistor, 100 W Digi-Key
P100ECT-ND
R804
Resistor, 1300 W Digi-Key
P1.3KGCT-ND
R805
Resistor, 1200 W Digi-Key
P1.2KGCT-ND
S1
Transistor Digi-Key
BCP5616TA-ND
S2
Voltage Regulator
Digi-Key
LM78L05ACM-ND
S3
Potentiometer, 2k W Digi-Key
3224W-202ECT-ND
Output
C201, C206
Chip capacitor, 0.1 μF
Digi-Key
399-1267-2-ND
C202, C203
Chip capacitor, 10 μF
Digi-Key
587-1818-2-ND
C204, C205
Capacitor, 10 μF
Digi-Key
281M5002106K
C207
Capacitor, 10 pF
ATC
ATC100B100FW500XB
C208, C209
Chip capacitor, 1 μF
Digi-Key
445-1411-2-ND
C210, C211
Chip capacitor, 2.2 μF
Digi-Key
445-1447-2-ND
C212, C213
Chip capacitor, 1.1 pF
ATC
ATC100A1R1BW150XB
Data Sheet 12 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-6
45° X 2.032
[45° X .080]
4X 30°
4X R1.524
[R.060]
2X 5.080
[.200] (2 PLS)
4X 1.143
[.045] (4 PLS)
V
D
4.889±.510
[.192±.020]
V
S
CL
2X R1.626
[R.064]
G
E
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
F
H -33288 - 6_ po _02 -18 - 2010
CL
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
22.352±.200
[.880±.008]
1.575
[.062] (SPH)
4.039 +.254
–. 127
010
[.159 +.
–. 005 ]
CL
34.036
[1.340]
1.016
[.040]
Diagram Notes—unless otherwise specified:
Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
13 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
V
D
9.779
[.385]
9.398
[.370]
C
L
4X R0.508+.381
-.127
R.020+.015
-.005
19.558±.510
[.770±.020]
G
]
[
4.889±.510
[.192±.020]
2X 12.700
[.500]
4.039+.254
-.127
.159+.010
-.005
22.352±.200
[.880±.008]
[
]
C 66065-A0003- C743- 01-0027 H- 34288- 4_
2 .dwg
1.575
[.062] (SPH)
C
L
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 14 of 15
Rev. 09, 2010-11-09
PTFB192503EL V1/ PTFB192503FL V2
Confidential, Limited Internal Distribution
Revision History:
2010-11-09
Previous Version: 2010-10-07, Data Sheet
Page
Subjects (major changes since last revision)
1, 2, 13
Changed eared flange package type
1
Updated VSWR specification to 10:1
Data Sheet
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Edition 2010-11-09
Published by
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81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet 15 of 15
Rev. 09, 2010-11-09