PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC260202FC Package H-37248-4 Features Two-carrier WCDMA 3GPP Drive-up 20 50 19 40 Gain 18 30 Efficiency 17 20 16 10 15 Drain Efficiency (%) Gain (dB) VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz • Broadband input matching • Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB • Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power • Integrated ESD protection • Low thermal resistance • Pb-free and RoHS compliant 0 30 31 32 33 34 35 36 37 38 39 40 Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2615 MHz, ƒ2 = 2625 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 19 20 — dB Drain Efficiency D 27.5 30 — % Intermodulation Distortion IMD — –31.5 –30 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC DC Characteristics (single side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Operating Gate Voltage VDS = 28 V, IDQ = 1.35 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 25 W CW) RJC 2.2 °C/W Junction Temperature Ordering Information Type and Version Order Code Package Description Shipping PTFC260202FC V1 PTFC260202FCV1XWSA1 H-37248-4, earless flange Tray PTFC260202FC V1 R250 PTFC260202FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 45 -20 40 -25 35 -30 30 -35 25 -40 20 IMD Low IMD Up ACPR Efficiency -50 -55 15 10 2690 Upper 2690 Lower -25 32 33 34 35 36 37 38 39 -30 -35 0 31 2496 Lower 5 -60 30 2496 Upper -40 40 30 31 32 33 34 35 36 37 38 39 40 Output Power (dBm) Output Power (dBm) Single-carrier WCDMA 3GGP Broadband Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 0.17 A, POUT = 4 W, PAR = 10 dB 30 -5 -10 25 -15 20 -20 15 -25 10 -30 5 -35 0 2480 2520 2560 2600 2640 2680 -40 2720 20 60 Gain 19 50 18 40 17 30 Efficiency 16 20 15 10 0 14 35 Frequency (MHz) Data Sheet 70 21 Gain (dB) Gain (dB) / Efficiency (%) 35 0 IMD (dBc) / ACPR (dBc) Gain Efficiency IRL ACPR 40 VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz Drain Efficiency (%) -45 -20 IMD (dBc) -15 Drain Efficiency (%) IMD & ACPR (dBc) Typical Performance (data taken in a production test fixture) 36 37 38 39 40 41 42 43 44 45 Output Power (dBm) 3 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC Broadband Circuit Impedance Z Source Frequency Z Load MHz R jX R jX 2495 25.5 –18.0 8.4 –11.1 2533 24.7 –17.9 8.3 –11.2 2570 24.0 –17.8 8.3 –11.3 2620 23.1 –17.6 8.0 –11.4 2655 22.5 –17.4 7.9 –11.5 2690 22.0 –17.1 7.6 –11.6 Z Source D1 Z Load S G1 G2 D2 Reference Circuit TL106 TL107 TL108 TL109 TL111 C103 10000000 pF TL128 2 3 1 C102 220000 pF TL127 2 3 1 TL126 TL125 TL116 C109 15 pF TL134 2 3 1 TL135 R102 10 Ohm TL146 TL136 C105 15 pF TL114 R104 4.7 Ohm TL121 TL129 TL119 3 2 1 GATE_DUT Pin G1 TL142 TL120 TL101 TL145 TL139 TL143 TL130 TL150 RF_IN C104 1.2 pF 2 3 1 4 TL147 TL149 TL140 TL138 TL148 TL137 TL141 TL144 C106 15 pF R103 4.7 Ohm TL115 TL122 TL113 1 2 3 TL118 GATE_DUT Pin G2 R101 10 Ohm C101 15 pF TL117 TL112 1 3 2 r = 3.66 H = 30 mil TL133 C107 10000000 pF RO/RO4350 TL103 TL124 TL102 TL132 C108 220000 pF TL131 TL123 3 2 TL110 1 c260202fc_bdin_09-13-2012 TL104 TL105 3 2 1 Reference circuit input schematic for ƒ = 2680 MHz Data Sheet 4 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC Reference Circuit TL256 TL201 TL222 TL223 1 TL207 2 1 2 3 TL248 TL208 3 C210 10000000 pF C201 15 pF TL225 Drain_DUT Pin D1 TL211 2 1 TL221 2 3 C209 100000000 pF C202 1.6 pF TL206 3 TL210 1 1 C203 1 pF TL251 TL209 2 TL203 TL250 3 2 TL226 TL241 TL240 TL252 TL205 1 3 TL249 R201 100 Ohm Drain_DUT Pin D2 TL220 3 1 TL214 TL213 TL224 TL219 2 TL234 TL233 2 TL246 1 TL202 3 TL232 2 2 TL230 TL212 RF_OUT TL216 TL227 1 TL228 1 TL237 3 2 r = 3.66 C204 10000000 pF TL247 TL238 C208 100000000 pF TL218 H = 30 mil TL217 TL243 TL244 TL245 C206 1.6 pF C205 15 pF 3 2 TL204 1 3 1 TL253 TL255 C207 1 pF 3 TL235 TL239 3 1 TL236 TL231 1 TL254 2 TL242 TL215 3 2 TL229 c260202fc_bdout_09-13-2012 1 RO/RO4350 3 2 Reference circuit output schematic for ƒ = 2680 MHz Data Sheet 5 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC Reference Circuit (cont.) RO4350, .020 (61) RO4350, .020 (105) C201 VGS VDD C210 C209 C103 C102 C109 R102 C202 C105 RF_IN C203 R104 R201 C104 C106 R103 RF_OUT C207 C206 R101 VGS C101 C107 C108 C208 VDD C204 C205 PTFC260202F_OUT_01 PTFC260202F_IN_02 Reference circuit assembly diagram (not to scale) Data Sheet 6 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTFC260202FC Test Fixture Part No. LTN/PTFC260202FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66, ƒ = 2680 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C105, C106, C109 Chip capacitor, 15 pF ATC ATC800A150GT250X C102, C108 Capacitor, 220000 pF Digi-Key 445-1814-2-ND C103, C107 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C104 Chip capacitor, 1.2 pF ATC ATC800A1R2GT250X R101, R102 Resistor, 10 Digi-Key P10ECT-ND R103, R104 Resistor, 4.7 Digi-Key P4.7ECT-ND C201, C205 Chip capacitor, 15 pF ATC ATC800A150GT250X C202, C206 Chip capacitor, 1.6 pF ATC ATC800A1R6BT250X C203, C207 Chip capacitor, 1 pF ATC ATC800A1R0BT250X C204, C210 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C208, C209 Capacitor, 100 µF Digi-Key P5571-ND R201 Resistor, 100 Digi-Key CR11206T0100J Output Pinout Diagram (top view) S D1 D2 G1 G2 Pin D1 D2 G1 G2 S Description Drain Device 1 Drain Device 2 Gate Device 1 Gate Device 2 Source (flange) H-37248-4_pd_10-10-2012 Lead connections for PTFC260202FC Data Sheet 7 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC Package Outline Specifications Package H-37248-4 >@ >@ ;; >;@ > 5 @ ;5 ; >@ )/$1*( >@ &/ ' ' /,' >@ >@ &/ * * ; >@ ; >@ 63+ >@ >@ >@ >@ $ +BSRBB >@ 6 &/ >@ Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 03.2, 2014-05-15 PTFC260202FC V1 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-12 Advance All Data Sheet reflects advance specification for product development 02 2012-09-04 Production All Data Sheet reflects released product specification 03 2013-04-05 Production 2 4 8 Revised storage temperature range Revised broadband impedance icon Updated package outline 03.1 2013-11-20 Production 1 Revised min efficiency in Two-carrier WCDMA Specification table 03.2 2014-05-14 Production 2 Added operating voltage and revised juntion temperature in Maximum Ratings table We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-05-15 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03.2, 2014-05-15