BDP951 ... BDP955 NPN Silicon AF Power Transistor For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP952 ... BDP956 (PNP) 2 1 Type Marking Pin Configuration BDP951 BDP 951 1=B 2=C 3=E 4=C SOT223 BDP953 BDP 953 1=B 2=C 3=E 4=C SOT223 BDP955 PDP 955 1=B 2=C 3=E 4=C SOT223 VPS05163 Package Maximum Ratings Parameter Symbol BDP 951 BDP 953 BDP 955 Unit Collector-emitter voltage VCEO 80 100 120 Collector-base voltage VCBO 100 120 140 Emitter-base voltage VEBO 5 5 5 DC collector current IC 3 Peak collector current ICM 5 Base current IB 200 Peak base current IBM 500 Total power dissipation, TS = 99 °C Ptot 3 W Junction temperature Tj 150 °C Storage temperature Tstg V A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-06-2001 BDP951 ... BDP955 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP951 80 - - BDP953 100 - - BDP955 120 - - BDP951 100 - - BDP953 120 - - BDP955 140 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 20 µA IEBO - - 100 nA Collector-base breakdown voltage IC = 100 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 100 V, IE = 0 Collector cutoff current VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) - hFE IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, VCE = 1 V 40 - 475 IC = 2 A, VCE = 2 V 15 - - VCEsat - - 0.8 VBEsat - - 1.5 fT - 100 - MHz Ccb - 25 - pF Collector-emitter saturation voltage1) V IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤=300µs, D = 2% 2 Aug-06-2001 BDP951 ... BDP955 Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 10 3 3.2 K/W W 10 2 RthJS P tot 2.4 2 10 1 1.6 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 1.2 0.8 10 -1 0.4 0 0 20 40 60 80 120 °C 100 10 -2 -6 10 150 10 -5 10 -4 10 -3 10 -2 s TS 0 tp Permissible Pulse Load DC current gain hFE = f (IC) Ptotmax / PtotDC = f (tp) VCE = 2V 10 3 10 3 - 100°C 25°C -50°C D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 hFE Ptotmax / PtotDC 10 10 1 10 0 -6 10 10 2 10 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 0 10 0 tp 10 1 10 2 10 3 mA 10 4 IC 3 Aug-06-2001 BDP951 ... BDP955 Collector cutoff current ICBO = f (TA ) Collector-emitter saturation voltage VCB = 45V IC = f (VCEsat ), hFE = 10 10 4 10 5 nA mA 10 4 10 3 100°C 25°C -50°C IC ICBO 10 3 max 10 10 2 2 10 1 typ 10 1 10 0 10 -1 0 20 40 60 80 100 120 °C 10 0 0.0 150 0.2 V 0.4 0.8 TA VCEsat Base-emitter saturation voltage Collector current I C = f (VBE) IC = f (VBEsat ), hFE = 10 VCE = 2V 10 4 10 4 mA mA 10 3 10 3 IC IC -50°C 25°C 100°C 10 2 10 2 10 1 10 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 10 0 0.0 1.3 VBEsat -50°C 25°C 100°C 0.2 0.4 0.6 0.8 1.0 V 1.3 VBE 4 Aug-06-2001