DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters 2 • Inverters 1 • Switching regulators • Motor control systems. PINNING 1 PIN 3 MBB008 2 3 MBK117 DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter Fig.1 Simplified outline (SOT429) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage MAX. UNIT VBE = 0 BUW12W 850 V BUW12AW 1000 V BUW12W 400 V BUW12AW 450 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage see Figs 7 and 9 1.5 V IC collector current (DC) see Figs 2 and 4 8 A ICM collector current (peak value) see Fig 2 20 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.3 125 W tf fall time resistive load; see Figs 11 and 12 0.8 µs THERMAL CHARACTERISTICS SYMBOL Rth j-mb 1997 Aug 14 PARAMETER thermal resistance from junction to mounting base 1 VALUE UNIT 1 K/W Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MIN. MAX. UNIT VBE = 0 BUW12W − 850 V BUW12AW − 1000 V BUW12W − 400 V BUW12AW − 450 V A collector-emitter voltage open base IC collector current (DC) see Figs 2 and 4 − 8 ICM collector current (peak value) tp < 2 ms; see Fig.2 − 20 A IB base current (DC) − 4 A IBM base current (peak value) tp ≤ 2 ms − 6 A Tmb ≤ 25 °C; see Fig.3 Ptot total power dissipation − 125 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUW12W BUW12AW VCEsat VBEsat ICES MIN. TYP. MAX. UNIT 400 − − V 450 − − V collector-emitter saturation voltage BUW12W IC = 6 A; IB = 1.2 A; see Figs 7 and 9 − − 1.5 V BUW12AW IC = 5 A; IB = 1 A; see Figs 7 and 9 − − 1.5 V BUW12W IC = 6 A; IB = 1.2 A; see Fig.7 − − 1.5 V BUW12AW IC = 5 A; IB = 1 A; see Fig.7 − − 1.5 V VCE = VCESMmax; VBE = 0; note 1 − − 1 mA VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − 3 mA mA base-emitter saturation voltage collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 9 V; IC = 0 − − 10 hFE DC current gain VCE = 5 V; IC = 10 mA; see Fig.10 10 18 35 VCE = 5 V; IC = 1 A; see Fig.10 10 20 35 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL PARAMETER BUW12W; BUW12AW CONDITIONS MIN. TYP. MAX. UNIT Switching times resistive load (see Figs 11 and 12) ton ts tf turn-on time BUW12W ICon = 6 A; IBon = −IBoff = 1.2 A − − 1 µs BUW12AW ICon = 5 A; IBon = −IBoff = 1 A − − 1 µs BUW12W ICon = 6 A; IBon = −IBoff = 1.2 A − − 4 µs BUW12AW ICon = 5 A; IBon = −IBoff = 1 A − − 4 µs BUW12W ICon = 6 A; IBon = −IBoff = 1.2 A − − 0.8 µs BUW12AW ICon = 5 A; IBon = −IBoff = 1 A − − 0.8 µs ICon = 6 A; IB = 1.2 A − 1.6 2.1 µs ICon = 6 A; IB = 1.2 A; Tj = 100 °C − 1.8 2.3 µs ICon = 5 A; IB = 1 A − 1.6 2.1 µs ICon = 5 A; IB = 1 A; Tj = 100 °C − 1.8 2.3 µs storage time fall time Switching times inductive load (see Figs 13 and 14) ts storage time BUW12W BUW12AW tf fall time BUW12W BUW12AW ICon = 6 A; IB = 1.2 A − 80 150 ns ICon = 6 A; IB = 1.2 A; Tj = 100 °C − 140 300 ns ICon = 5 A; IB = 1 A − 80 150 ns ICon = 5 A; IB = 1 A; Tj = 100 °C − 140 300 ns Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 14 3 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUW12W; BUW12AW MGB927 103 IC (A) 102 ICM max IC max 10 (1) II 1 I 10−1 (2) III DC 10−2 BUW12W BUW12AW 10−3 1 10 IV 102 103 VCE (V) 104 Tmb ≤ 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms. (1) Ptot max line. (2) Second breakdown limits. Fig.2 Forward bias SOAR. 1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW MGD283 120 handbook, halfpage MGL174 10 handbook, halfpage Ptot max (%) IC (A) 80 5 40 BUW12W BUW12AW 0 0 0 50 100 (oC) Tmb 150 0 400 Fig.3 Power derating curve. andbook, halfpage 800 VCE (V) 1200 Fig.4 Reverse bias SOAR. handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.5 1997 Aug 14 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.6 5 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW MGB914 2.0 handbook, full pagewidth VBEsat VCEsat (V) 1.5 1.0 (1) (2) 0.5 (3) (4) 0 10−1 IC/IB = 5. 10 1 (1) VBE; Tj = 25 °C. (2) VBE; Tj = 100 °C. 102 IC (A) (3) VCE; Tj = 100 °C. (4) VCE; Tj = 25 °C. Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values. MGB911 1.6 handbook, full pagewidth VBE (V) 1.4 (1) 1.2 (2) (3) 1.0 0.8 0 Tj = 25 °C. (1) IC = 8 A. 0.5 1 1.5 2 2.5 (2) IC = 6 A. (3) IC = 3 A. Fig.8 Base-emitter voltage as a function of base current; typical values. 1997 Aug 14 6 IB (A) 3 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW MGB872 10 (1) (2) MBC096 102 handbook, halfpage handbook, halfpage (3) VCEsat hFE (V) VCE = 5 V 1V 10 1 10−1 10−2 10−1 1 IB (A) 1 10−2 10 10−1 1 10 2 IC (A) 10 (1) IC = 3 A. (2) IC = 6 A. (3) IC = 8 A. Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.9 Collector-emitter saturation voltage as a function of base current. Fig.10 DC current gain; typical values. handbook, halfpage MBB730 tr −IB on 90% −IB 10% VCC handbook, halfpage t −IB off RL VIM RB 0 D.U.T. tp T −IC on 90% −IC MGE244 10% ton tf toff VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. Fig.12 Switching time waveforms with resistive load. Fig.11 Test circuit resistive load. 1997 Aug 14 ts 7 t Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW handbook, halfpage tr IB on 90% IB 10% VCC handbook, halfpage t LC +IB −IB off VCL LB IC on 90% D.U.T. −VBE MGE246 IC 10% ts toff t tf MGE238 VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH. Fig.14 Switching time waveforms with inductive load. Fig.13 Test circuit inductive load. 1997 Aug 14 8 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 α E P A A1 β q S R D Y L1(1) Q b2 L 1 2 3 c w M b b1 e e 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D E e L L1 P Q q R S w Y α β mm 5.3 4.7 1.9 1.7 1.2 0.9 2.2 1.8 3.2 2.8 0.9 0.6 21 20 16 15 5.45 16 15 4.0 3.6 3.7 3.3 2.6 2.4 5.3 3.5 3.3 7.5 7.1 0.4 15.7 15.3 6° 4° 17° 13° Note 1. Terminals are uncontrolled within zone L1. OUTLINE VERSION SOT429 1997 Aug 14 REFERENCES IEC JEDEC EIAJ TO-247 EUROPEAN PROJECTION ISSUE DATE 97-06-11 9 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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