INTEGRATED CIRCUITS DATA SHEET TZA3047A; TZA3047B 30 Mbits/s up to 1.25 Gbits/s laser drivers Product specification 2003 Jun 05 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers CONTENTS FEATURES TZA3047A; TZA3047B 11 AC CHARACTERISTICS 12 APPLICATION INFORMATION Design equations Bias and modulation currents Average monitor current and extinction ratio Dual-loop control Alarm operating current Alarm monitor current Pulse width adjustment TZA3047A with dual-loop control TZA3047B with dual-loop control TZA3047B with average loop control 1.1 1.2 1.3 General Control features Protection features 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.1.5 12.1.6 12.2 12.3 12.4 7 FUNCTIONAL DESCRIPTION 13 BONDING PAD LOCATIONS 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 Data and clock input Retiming Pulse width adjustment Modulator output stage Dual-loop control Average loop control Direct current setting Soft start Alarm functions Enable Reference block 14 PACKAGE OUTLINE 15 SOLDERING 15.1 Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods 16 DATA SHEET STATUS 8 LIMITING VALUES 17 DEFINITIONS 9 THERMAL CHARACTERISTICS 18 DISCLAIMERS 10 DC CHARACTERISTICS 2003 Jun 05 15.2 15.3 15.4 15.5 2 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 1 1.1 FEATURES TZA3047A; TZA3047B 1.3 Protection features • Alarm function on operating current General • 30 Mbits/s to 1.25 Gbits/s • Alarm function on monitor current • Bias current up to 100 mA • Enable function on bias and modulation currents • Modulation current up to 100 mA • Soft start on bias and modulation currents. • Rise and fall times typical 120 ps • Jitter below 30 ps (peak-to-peak value) 2 • Modulation output voltage up to 2 V dynamic range • SDH/SONET optical transmission systems. • 1.2 V minimum voltage on the modulation output pin and 0.4 V minimum voltage on pin BIAS 3 • Retiming function via external clock with disable option GENERAL DESCRIPTION The TZA3047 is a fully integrated laser driver for optical transmission systems with data rates up to 1.25 Gbits/s. The TZA3047 incorporates all the necessary control and protection functions for a laser driver application with very few external components required and low power dissipation. The dual-loop controls the average monitor current in a programmable range from 150 µA to 1300 µA and the extinction ratio in a programmable range from 5 to 15 (linear scale). • Pulse width adjustment function with disable option • Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) compatible data and clock inputs • Internal common mode voltage available for AC-coupled data and clock inputs and for single-ended applications • 3.3 V supply voltage The design is made in the Philips BiCMOS RF process and is available in a HBCC32 package or as bare die. The TZA3047A is intended for use in an application with an AC-coupled laser diode with a 3.3 V laser supply voltage. The TZA3047B is intended for use in an application with a DC-coupled laser diode for both 3.3 and 5 V laser supply voltages. • TZA3047A: AC-coupled laser for 3.3 V laser supply • TZA3047B: DC-coupled laser for 3.3 V and 5 V laser supply. 1.2 APPLICATIONS Control features • Dual-loop control for constant and accurate optical average power level and extinction ratio • Optional average power loop control (up to 1.25 Gbits/s) • Optional direct setting of modulation and bias currents. 4 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TZA3047AVH HBCC32 TZA3047BVH HBCC32 TZA3047UH 2003 Jun 05 − DESCRIPTION plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 × 5 × 0.65 mm bare die; 2 560 × 2 510 × 380 µm 3 VERSION SOT560-1 − Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 5 TZA3047A; TZA3047B BLOCK DIAGRAM handbook, full pagewidth AVR 32 (57) MODOUT GNDCCB ER 31 (56) MODIN 29 (52) 30 (55) (51, 53) BIASOUT BIASIN 28 (50) ACDC MON 27 (49) 26 (48) (46) (44, 45) 25 VCCA VCCD 2 (3, 4) 100 µA 100 µA 1 (1, 2) CURRENT CONVERSION Ione dual loop: IER = 1.2 V/RER IBIAS (43) 24 VCCO BIAS V/I 100 mA/V average loop: ER = GND 23 Izero GND V/I 100 mA/V CONTROL BLOCK IMON DIN 100 Ω TEST CIN GNDRF CINQ GND GNDESD ALRESET 100 Ω MUX 20 kΩ PRE AMP 18 (28, 33, 35, 36, 42) FF 20 kΩ 100 Ω (27) 17 C LA LAQ LAQ GND GNDO PWA disable retiming: VCIN, VCINQ < 0.3 V 20 kΩ TZA3047A TZA3047B (14, 47) VCCD − 1.32 V 9 (15) 10 kΩ 1.4 V 3.3 V 1.4 V 10 (16) ENABLE (20, 22, 34, 38, 54) Imod/1500 + ALARM OPERATING CURRENT R ALARM MONITOR CURRENT Q R V AND I REFERENCE Q (26) enable (17) GNDDFT i.c. Iav(MON)/12.5 IBIAS /750 20 kΩ 11 (18) 12 (19) ALOP ALMON The numbers in parenthesis refer to the bare die version. Fig.1 Block diagram. 2003 Jun 05 POST AMP Imod 7 (13) 8 PULSE WIDTH ADJUST LA D 6 (12) (7, 8, 9, 10, 26) (37, 39) 21 (29, 30) 19 4 (6) 5 (11) (40, 41) 22 (31, 32) 20 3 (5) 20 kΩ DINQ 100 Ω 4 13 (21) MAXOP 14 (23) 15 (24) 16 (25) VTEMP MAXMON RREF GNDRF MDB314 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 6 TZA3047A; TZA3047B PINNING SYMBOL PIN PAD(1) DESCRIPTION substrate common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground GND die pad VCCA 1 1 analog supply voltage VCCA − 2 analog supply voltage VCCD 2 3 digital supply voltage VCCD − 4 digital supply voltage DIN 3 5 non-inverted data input (RF input) DINQ 4 6 inverted data input (RF input) GNDRF − 7 ground GNDRF − 8 ground GNDRF − 9 ground GNDRF − 10 ground TEST 5 11 test pin or test pad; must be connected to ground CIN 6 12 non-inverted clock input (RF input) CINQ 7 13 inverted clock input (RF input) GND 8 − ground GNDESD − 14 ground ALRESET 9 15 alarm reset input; resets ALMON and ALOP alarms ENABLE 10 16 enable input for modulation and bias current GNDDFT − 17 ground ALOP 11 18 alarm output on operating current (open-drain) ALMON 12 19 alarm output on monitor diode current (open-drain) i.c. − 20 internally connected MAXOP 13 21 threshold level input for alarm on operating current i.c. − 22 internally connected VTEMP 14 23 temperature dependent voltage output source MAXMON 15 24 threshold level input for alarm on monitor diode current RREF 16 25 reference current input; must be connected to ground with an accurate (1%) 10 kΩ resistor GNDRF − 26 ground PWA 17 27 pulse width adjustment input GND 18 − ground GNDO − 28 ground LAQ 19 29 inverted laser modulation output (RF output); output for dummy load LAQ − 30 inverted laser modulation output (RF output); output for dummy load LAQ 20 31 inverted laser modulation output (RF output); output for dummy load LAQ − 32 inverted laser modulation output (RF output); output for dummy load GNDO − 33 ground i.c. − 34 internally connected GNDO − 35 ground 2003 Jun 05 5 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B PIN PAD(1) GNDO − 36 ground LA 21 37 non-inverted laser modulation output (RF output); output for laser i.c. − 38 internally connected LA − 39 non-inverted laser modulation output (RF output); output for laser LA 22 40 non-inverted laser modulation output (RF output); output for laser LA − 41 non-inverted laser modulation output (RF output); output for laser GND 23 − ground GNDO − 42 ground SYMBOL DESCRIPTION BIAS 24 43 current source output for the laser bias current VCCO 25 44 supply voltage for the output stage and the laser diode VCCO − 45 supply voltage for the output stage and the laser diode ACDC − 46 AC or DC coupled laser; note 2 GNDESD − 47 ground MON 26 48 input for the monitor photo diode (RF input) BIASIN 27 49 input for the bias current setting BIASOUT 28 50 output of the control block for the bias current GNDCCB − 51 ground MODIN 29 52 input for the modulation current setting GNDCCB − 53 ground i.c. − 54 internally connected MODOUT 30 55 output of the control block for the modulation current ER 31 56 input for the optical extinction ratio setting AVR 32 57 input for the optical average power level setting Notes 1. All ground pads must be connected to ground. 2. ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect this pad to ground. 2003 Jun 05 6 Philips Semiconductors Product specification ER MODOUT MODIN BIASOUT BIASIN MON VCCO TZA3047A; TZA3047B AVR 30 Mbits/s up to 1.25 Gbits/s laser drivers 32 31 30 29 28 27 26 25 handbook, full pagewidth VCCA 1 VCCD 2 24 BIAS DIN 3 23 GND DINQ 4 22 LA 21 LA TZA3047A TZA3047B 19 LAQ 8 18 GND 17 PWA 9 10 11 12 13 14 15 16 RREF 7 GND MAXMON CINQ VTEMP LAQ MAXOP 20 ALMON 6 ALOP CIN ENABLE 5 ALRESET TEST MDB318 Fig.2 Pin configuration. 7 7.1 FUNCTIONAL DESCRIPTION 7.3 Data and clock input The on-duration of the laser current can be adjusted from −100 to +100 ps. The adjustment time is set by resistor RPWA. The maximum allowable capacitive load on pin PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to ground. The TZA3047 operates with differential Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the data and clock inputs carry a complementary signal with the specified peak-to-peak value (true differential excitation). 7.4 The modulation current switches between the LA and LAQ outputs. For a good RF performance the inactive branch carries a small amount of the modulation current. If VDIN > VDINQ, the modulation current is sunk by the LA pins and corresponds to an optical ‘one’ level of the laser. Retiming The LA output is optimized for the laser allowing a 2 V dynamic range and a 1.2 V minimum voltage. The LAQ output is optimized for the dummy load. The retiming function synchronizes the data with the clock to improve the jitter performance. The data latch switches on the rising edge of the clock input. The retiming function is disabled when both clock inputs are below 0.3 V. The output stage of the TZA3047A is optimized for AC-coupled lasers and the output stage of the TZA3047B is optimized for DC-coupled lasers. At start-up the initial polarity of the laser is unknown before the first rising edge of the clock input. 2003 Jun 05 Modulator output stage The output stage is a high-speed bipolar differential pair with typical rise and fall times of 120 ps and with a modulation current source of up to 100 mA when the LA pins are connected to VCCO. The circuit generates an internal common mode voltage for AC-coupled data and clock inputs and for single-ended applications. 7.2 Pulse width adjustment The BIAS output is optimized for low voltage requirements (0.4 V minimum for a 3.3 V laser supply; 0.8 V minimum for a 5 V laser supply). 7 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 7.5 7.9 Dual-loop control The dual-loop operates by monitoring the current of the monitor photodiode which is directly proportional to the laser emission. The ‘one’ and ‘zero’ current levels of the monitor diode are captured by the detector of the dual-loop control. Pin MON for the monitor photodiode current is an RF input. 7.10 7.11 The maximum allowable capacitive load on pins AVR, ER, BIASOUT and MODOUT is 100 pF. Average loop control The reference voltage on the setting pins (MAXOP, MAXMON, PWA, ER and AVR) is buffered and derived from the band gap voltage. The output voltage on pin VTEMP reflects the junction temperature of the TZA3047, the temperature coefficient of VVTEMP equals −2.2 mV/K. Direct current setting The TZA3047 can also operate in open-loop mode with direct setting of the bias and modulation currents. The bias and modulation current sources are transconductance amplifiers and the output currents are determined by the BIASIN and MODIN voltages respectively. The bias current source has a bipolar output stage with minimum output capacitance for optimum RF performance. Soft start At power-up the bias and modulation current sources are released when VCCA > 2.7 V and the reference voltage has reached the correct value of 1.2 V. The control loop starts with minimum bias and modulation current at power-up and when the device is enabled. The current levels increase until the MON input current matches the programmed average level and, in the case of dual-loop control, the extinction ratio. 2003 Jun 05 Reference block The reference voltage is derived from a band gap circuit and is available at pin RREF. An accurate (1%) 10 kΩ resistor has to be connected to pin RREF to provide the internal reference current. The maximum capacitive load on pin RREF is 100 pF. The average power control loop maintains a constant average power level of the monitor current over temperature and lifetime of the laser. The average loop control is activated by short-circuiting pin ER to ground. 7.8 Enable A LOW level on the enable input disables the bias and modulation current sources: the laser is off. A HIGH level on the enable input or an open enable input switches both current sources on: the laser is operational. The average monitor current is programmable over a wide current range from 150 to 1300 µA for both the dual-loop control and the average loop control. The extinction ratio is programmable from 5 to 15. 7.7 Alarm functions The TZA3047 features two alarm functions for the detection of excessive laser operating current and monitor diode current due to laser ageing, laser malfunctioning or a too high laser temperature. The alarm threshold levels are programmed by a resistor or a current source. In the TZA3047A, for the AC-coupled application, the operating current is equal to the bias current. In the TZA3047B, for the DC-coupled application, the operating current equals the bias current plus half of the modulation current. The TZA3047 incorporates a dual-loop control for a constant, accurate and temperature-independent control of the optical average power level and the extinction ratio. The dual-loop guarantees constant optical ‘one’ and ‘zero’ levels which are independent of the laser temperature and the laser age. 7.6 TZA3047A; TZA3047B 8 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to ground; positive currents flow into the IC. SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCCD digital supply voltage −0.5 +3.5 V VCCA analog supply voltage −0.5 +3.5 V VCCO output stage supply voltage Vo(LA) Vo(LAQ) VBIAS Vn In output voltage at pin LA −0.5 +3.5 V 5 V laser supply (TZA3047B only) −0.5 +5.3 V TZA3047A; VCCO = 3.3 V 4.5 V 3.3 V laser supply 1.2 TZA3047B; VCCO = 3.3 V 0.8 4.1 V TZA3047B; VCCO = 5 V 1.2 4.5 V TZA3047A; VCCO = 3.3 V 1.8 4.5 V TZA3047B; VCCO = 3.3 V 1.6 4.5 V TZA3047B; VCCO = 5 V 2.0 5.2 V TZA3047A; VCCO = 3.3 V 0.4 3.6 V TZA3047B; VCCO = 3.3 V 0.4 3.6 V TZA3047B; VCCO = 5 V 0.8 4.1 V analog inputs and outputs −0.5 VCCA + 0.5 V digital inputs and outputs −0.5 VCCD + 0.5 V MAXOP, MAXMON, RREF, PWA, ER and AVR −1.0 0 mA VTEMP, BIASOUT and MODOUT −1.0 +1.0 mA ALOP, ALMON and MON 0 5.0 mA output voltage at pin LAQ bias voltage voltage on other input and output pins input current on pins Tamb ambient temperature −40 +85 °C Tj junction temperature −40 +125 °C Tstg storage temperature −65 +150 °C 9 THERMAL CHARACTERISTICS In compliance with JEDEC standards JESD51-5 and JESD51-7. SYMBOL Rth(j-a) 2003 Jun 05 PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to ambient 4 layer printed circuit board in still air with 9 plated vias connected with the heatsink and the first ground plane in the PCB 35 K/W HBCC32 die pad soldered to PCB 60 K/W 9 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 10 DC CHARACTERISTICS Tamb = −40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 kΩ; RER = 62 kΩ; RMODIN = 6.2 kΩ; RBIASIN = 6.8 kΩ; RPWA = 10 kΩ; RRREF = 10 kΩ; RMAXMON = 13 kΩ; RMAXOP = 20 kΩ; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies: pins VCCA, VCCD and VCCO VCCA analog supply voltage 3.14 3.3 3.47 V VCCD digital supply voltage 3.14 3.3 3.47 V VCCO RF output supply voltage 3.14 3.3 3.47 V 4.75 5.0 5.25 V ICCA analog supply current 30 40 50 mA ICCD digital supply current 35 45 55 mA ICCO RF output supply current 3.3 V laser supply 8 15 25 mA 5 V laser supply − 20 − mA 3.3 V laser supply 5 V laser supply pins LA and LAQ open-circuit Pcore core power dissipation core excluding output currents Io(LA), Io(LAQ) and IBIAS; PWA and retiming off − 264 − mW Ptot total power dissipation VBIAS = 3.3 V; IBIAS = 20 mA; Imod = 16 mA; note 1 330 400 500 mW 1000 mV Data and clock inputs: pins DIN and CIN Vi(p-p) input voltage swing (peak-to-peak value) Vi(DIN) = (VCCD − 2 V) to VCCD; Vi(CIN) = (VCCD − 2 V) to VCCD 100 − Vint(cm) internal common mode voltage AC-coupled inputs − VCCD − 1.32 − V VIO input offset voltage note 2 −10 0 +10 mV Zi(dif) differential input impedance 80 100 125 Ω Zi(cm) common mode input impedance 8 10 13 kΩ Vi(CIN)(dis) input voltage for disabled retiming VCIN = VCINQ − − 0.3 V Monitor photodiode input: pin MON Vi(MON) input voltage IMON = 50 to 2500 µA 0.9 1.1 1.3 V Zi(MON) input impedance IMON = 50 to 2500 µA − 27 − Ω linear scale − 5 7 − dB scale − 7 8.5 dB Extinction ratio setting for dual-loop control: pins MON and ER ERmin 2003 Jun 05 low extinction ratio setting dual-loop set-up; IER > −30 µA; note 3 10 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers SYMBOL ERmax PARAMETER TZA3047A; TZA3047B CONDITIONS MIN. TYP. MAX. UNIT high extinction ratio setting dual-loop set-up; IER < −10 µA; note 3 linear scale 13 15 − − dB scale 11 11.8 − dB ERacc relative accuracy of ER temperature and VCCA variations; ER = 10; AVR = 550 µA −10 − +10 % Vref(ER) reference voltage on pin ER IER = −35 to −5 µA; CER < 100 pF 1.15 1.20 1.25 V IER current sink on pin ER −35 − −5 µA Average setting for dual-loop control and average loop control: pins MON and AVR Iav(MON)(low) Iav(MON)(max) low average monitor current setting IAVR > −280 µA − − 150 µA average loop (pin ER to GND) − − 150 µA 1200 1300 − µA average loop (pin ER to GND) 1200 1300 − µA dual-loop (ER = 5) maximum average monitor IAVR = −15.0 µA current setting dual-loop (ER = 5) ∆Iav(MON) relative accuracy of average current on pin MON temperature and VCCA variations; ER = 10; AVR = 550 µA −10 − +10 % Vref(AVR) reference voltage on pin AVR IAVR = −250 to −15 µA; CAVR < 100 pF 1.15 1.20 1.25 V Isink(AVR) current sink on pin AVR −280 − −15 µA Control loop modulation output: pin MODOUT Isource(MODOUT) source current VMODOUT = 0.5 to 1.5 V; CMODOUT < 100 pF − − −200 µA Isink(MODOUT) VMODOUT = 0.5 to 1.5 V; CMODOUT < 100 pF 200 − − µA Isource(BIASOUT) source current VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF − − −200 µA Isink(BIASOUT) VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF 200 − − µA VBIAS = VCCO = 3.3 V 90 110 125 mA/V VBIAS = 4.1 V; VCCO = 5.0 V 95 110 130 mA/V sink current Control loop bias output: pin BIASOUT sink current Bias current source: pins BIASIN and BIAS gm(bias) bias transconductance VBIASIN = 0.5 to 1.5 V Isource(BIASIN) source current at pin BIASIN VBIASIN = 0.5 to 1.5 V −110 −100 −95 µA IBIAS(max) maximum bias current VBIASIN = 1.8 V 100 − − mA IBIAS(min) minimum bias current VBIASIN = 0 to 0.4 V − 0.2 0.4 mA IBIAS(dis) bias current at disable VENABLE < 0.8 V − − 30 µA 2003 Jun 05 11 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers SYMBOL VBIAS PARAMETER TZA3047A; TZA3047B CONDITIONS MIN. TYP. MAX. UNIT output voltage on pin BIAS normal operation VCCO = 3.3 V 0.4 − 3.6 V VCCO = 5 V 0.8 − 4.1 V VLA = VLAQ = VCCO = 3.3 V 78 90 105 mA/V VLA = VLAQ = VCCO = 4.5 V 80 95 110 mA/V VMODIN = 0.5 to 1.5 V −110 −100 −95 µA VMODIN = 1.8 V; VLA = VCCO = 3.3 V; note 4 100 − − mA − 5 6 mA − − 0.8 mA − − 2 mA 80 100 125 Ω − − 200 µA 1.6 − − V 1.2 − − V TZA3047B; VCCO = 5 V 1.6 − − V Modulation current source: pin MODIN gm(mod) Isource(MODIN) modulation transconductance source current at pin MODIN VMODIN = 0.5 to 1.5 V Modulation current outputs: pins LA Io(LA)(max)(on) maximum laser modulation output current at LA on Io(LA)(min)(on) minimum laser modulation VMODIN = 0 to 0.4 V; output current at LA on VLA = VCCO = 3.3 V; note 4 Io(LA)(min)(off) minimum laser modulation VLA = VCCO = 3.3 V; note 4 output current at LA off VMODIN = 0.5 V VMODIN = 1.5 V Zo(LA), Zo(LAQ) output impedance pins LA and LAQ Io(LA)(dis), Io(LAQ)(dis) non-inverted and inverted laser modulation output current at disable Vo(LA)min minimum output voltage at TZA3047A; VCCO = 3.3 V pin LA TZA3047B; VCCO = 3.3 V VENABLE < 0.8 V Enable function: pin ENABLE VIL LOW-level input voltage bias and modulation currents disabled − − 0.8 V VIH HIGH-level input voltage bias and modulation currents enabled 2.0 − − V Rpu(int) internal pull-up resistance 16 20 30 kΩ Alarm reset: pin ALRESET VIL LOW-level input voltage no reset − − 0.8 V VIH HIGH-level input voltage reset 2.0 − − V Rpd(int) internal pull-down resistance 7 10 15 kΩ 2003 Jun 05 12 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers SYMBOL PARAMETER TZA3047A; TZA3047B CONDITIONS MIN. TYP. MAX. UNIT Alarm operating current: pins MAXOP and ALOP Vref(MAXOP) reference voltage on pin MAXOP IMAXOP = 10 to 200 µA NMAXOP ratio of Ioper(alarm) and IMAXOP Ioper(alarm) = 7.5 to 150 mA drain voltage at active alarm IALOP = 500 µA VD(ALOP)L 1.15 1.2 1.25 V VCCO = 3.3 V 700 800 900 VCCO = 5.0 V 750 850 950 0 − 0.4 V V Alarm monitor current: pins MAXMON and ALMON Vref(MAXMON) reference voltage on pin MAXMON IMAXMON = 10 to 200 µA 1.15 1.2 1.25 NMAXMON ratio of IMON(alarm) and IMAXMON IMON(alarm) = 150 to 3000 µA 10 15 20 VD(ALMON)L drain voltage at active alarm IALMON = 500 µA 0 − 0.4 V Reference block: pins RREF and VTEMP VRREF reference voltage RRREF = 10 kΩ (1%); CRREF < 100 pF 1.15 1.20 1.25 V VVTEMP temperature dependent voltage Tj = 25 °C; CVTEMP < 2 nF; note 5 1.15 1.20 1.25 V TCVTEMP temperature coefficient of VVTEMP Tj = −25 to +125 °C; note 5 − −2.2 − mV/K Isource(VTEMP) source current of pin VTEMP − − −1 mA Isink(VTEMP) sink current of pin VTEMP 1 − − mA Notes 1. The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS will be VCCO minus the laser diode voltage which results in a lower total power dissipation. 2. The specification of the offset voltage is guaranteed by design. 3. Any (AVR, ER) setting needs to respect 50 µA < IMON < 2 500 µA. Therefore, for large ER settings, minimum/maximum AVR cannot be reached. 100 4. The relation between the sink current Io(LA) and the modulation current Imod is: l o(LA) = I mod × -------------------------------- where 100 + Z L ( LA ) ZL(LA) is the external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current is divided between ZL(LA) and the 100 Ω internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical ZL(LA) of 25 Ω will result in an Io(LA) current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real application load. 5. VVTEMP = 1.31 + TCVTEMP × Tj and Tj = Tamb + Ptot × Rth(j-a). 2003 Jun 05 13 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 11 AC CHARACTERISTICS Tamb = −40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 kΩ; RER = 62 kΩ; RMODIN = 6.2 kΩ; RBIASIN = 6.8 kΩ; RPWA = 10 kΩ; RRREF = 10 kΩ; RMAXMON = 13 kΩ; RMAXOP = 20 kΩ; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT RF path 0.03 − 1.25 Gbits/s RL = 25 Ω; note 1 − − 30 ps rise time of voltage on pin LA 20% to 80%; RL = 25 Ω; note 2 − 120 150 ps tf fall time of voltage on pin LA 80% to 20%; RL = 25 Ω; note 2 − 120 150 ps tsu(D) data input set-up time 60 − − ps th(D) data input hold time 60 − − ps ten(start) start-up time at enable direct current setting − − 1 µs internal time constant dual-loop control operating currents fully settled 30 − − ms BR bit rate JLA(p-p) jitter of pin LA output signal (peak-to-peak value) tr Current control tcint Pulse width adjustment tPWA(min) minimum pulse width adjustment on pins LA RPWA = 6.7 kΩ; CPWA < 100 pF − −100 − ps tPWA pulse width adjustment on pins LA RPWA = 10 kΩ; CPWA < 100 pF − 0 − ps tPWA(max) maximum pulse width adjustment on pins LA RPWA = 20 kΩ; CPWA < 100 pF − 100 − ps Notes 1. The output jitter specification is guaranteed by design. 2. For high modulation current, tr and tf are impacted by total inductance between the LA pins and the laser connection. 2003 Jun 05 14 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 12 APPLICATION INFORMATION 12.1 Design equations 12.1.1 handbook, halfpage 105 BIAS AND MODULATION CURRENTS Imod = Io(LA) (mA) The bias and modulation currents are determined by the voltages on pins BIASIN and MODIN. These voltages are applied by the BIASOUT and MODOUT pins for dual-loop control. For average loop control the BIASIN voltage is applied by the BIASOUT pin and the MODIN voltage is applied by an external voltage source or an external resistor RMODIN. gm(mod) = 100 mA/V For direct setting of bias and the modulation current, the BIASIN and MODIN voltages have to be applied by external voltage sources or by RBIASIN and RMODIN external resistors connected on BIASIN and MODIN pins: I o(LA)(min) 5 0 0.5 VMODIN (V) 1.5 MGT891 IBIAS = (RBIASIN × 100 µA − 0.5 V) × gm(bias) [mA] LA current when LA output is on. Vo(LA) = VCCO. Imod = (RMODIN × 100 µA − 0.5 V) × gm(mod) + 5 [mA] The bias and modulation current sources operate with an input voltage range from 0.5 to 1.5 V. The output current is at its minimum level for an input voltage below 0.4 V; see Figs 3 and 4. Fig.4 The bias and modulation current sources are temperature compensated and the adjusted current level remains stable over the temperature range. 12.1.2 Modulation current as a function of MODIN voltage. AVERAGE MONITOR CURRENT AND EXTINCTION RATIO The average monitor current Iav(MON) in dual-loop or average loop operation is determined by the source current (IAVR) of the AVR pin. The current can be sunk by an external current source or by an external resistor (RAVR) connected to ground: The bias and modulation currents increase with increasing resistor values for RBIASIN and RMODIN respectively, this allows resistor tuning to start at a minimum current level. V AVR Iav(MON) = 1580 − 5.26 × IAVR =1580 − 5.26 × -------------- [µA] R AVR handbook, halfpage 110 The extinction ratio in dual-loop operation is determined by the source current (IER) of the ER pin. The current can be sunk by an external current source or by an external resistor (RER) connected to ground: I BIAS (mA) gm(bias) = V ER I ER 1 ER = 20 – -------------- = 20 – ------------- × ---------2 µA R ER 2 µA 110 mA/V The average monitor current and the extinction ratio as a function of the IAVR and IER current are illustrated in Fig.5. I BIAS(min) 0.2 0 0.5 VBIASIN (V) The average monitor current increases with a decreasing IAVR or increasing RAVR, this allows resistor tuning of RAVR to start at minimum IAVR current level. 1.5 MGT890 The formulas used to program AVR and ER are valid for typical conditions; tuning is necessary to achieve good absolute accuracy of AVR and ER values. Fig.3 Bias current as a function of BIASIN voltage. 2003 Jun 05 15 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers handbook, full pagewidth TZA3047A; TZA3047B I av(MON) ER (µA) 1500 15 I ER = 20 − ER 2 µA I av(MON) = 1580 − 5.26 × IAVR µA 5 30 0 10 15 30 I AVR (µA) I ER (µA) 295 MGT892 Fig.5 Average monitor current and extinction ratio as a function of IAVR and IER. 12.1.3 Performance of the dual-loop for high data-rate is linked to the quality of the incoming IMON signal: a high performance interconnection between monitor photodiode and MON input is requested for maximum data rate applications (1.25 Gbits/s). DUAL-LOOP CONTROL The dual-loop control measures the monitor current (IMON) corresponding with an optical ‘one’ level and the IMON corresponding with the optical ‘zero’ level. The measured IMON(one) and IMON(zero) are compared with the average monitor current setting and the extinction ratio setting according to: The operational area of the dual-loop and the control area of the monitor input current must respect the following equations: I MON(one) + I MON(zero) I av(MON) = ---------------------------------------------------2 50 µA < I MON(zero) < 500 µA 250 µA < I MON(one) < 2500 µA I MON(one) ER = ----------------------I MON(zero) Stability of ER and AVR settings are guaranteed over a range of temperature and supply voltage variations. The dual-loop controls the bias and the modulation current for obtaining the IMON(one) and IMON(zero) current levels which correspond with the programmed AVR and ER settings. 2003 Jun 05 16 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 12.1.4 12.1.5 ALARM OPERATING CURRENT The alarm threshold Ioper(alarm) on the operating current is determined by the source current IMAXOP of the MAXOP pin. The current range for IMAXOP is from 10 to 200 µA which corresponds with an Ioper(alarm) from 7.5 to 150 mA. The IMAXOP current can be sunk by an external current source or by connecting RMAXOP to ground: ALARM MONITOR CURRENT The alarm threshold IMON(alarm) on the monitor current is determined by the source current IMAXMON of the MAXMON pin. The current range for IMAXMON is from 10 to 200 µA which corresponds with an IMON(alarm) from 150 to 3000 µA. The IMAXMON current can be sunk by an external current source or by connecting RMAXMON to ground: V MAXOP I oper(alarm) = N MAXOP × -------------------R MAXOP V MAXMON I MON(alarm) = N MAXMON × -----------------------R MAXMON The operating current equals the bias current for an AC-coupled laser application and equals the bias current plus half of the modulation current for the DC-coupled laser application: 12.1.6 PULSE WIDTH ADJUSTMENT The pulse width adjustment time is determined by the value of resistor RPWA, as shown below. I oper ( TZA3047A ) = I BIAS I oper ( TZA3047B ) TZA3047A; TZA3047B R PWA – 10 kΩ t PWA = 200 × ------------------------------------- [ps] R PWA I mod = I BIAS + --------2 The tPWA range is from −100 to +100 ps which corresponds with a RPWA range between a minimum resistance of 6.7 kΩ and a maximum resistance of 20 kΩ. The PWA function is disabled when the PWA input is short-circuited to ground; tPWA equals 0 ps for a disabled PWA function. handbook, halfpage 100 t PWA (ps) 0 6.7 10 R PWA (kΩ) 20 −100 MGT893 Fig.6 Pulse width adjustment. 2003 Jun 05 17 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 12.2 TZA3047A; TZA3047B TZA3047A with dual-loop control A simplified application using the TZA3047A with dual-loop control and with an AC-coupled laser at 3.3 V laser voltage is illustrated in Fig.7. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The alarm threshold on the operating current is made temperature dependent with resistor RVTEMP connected between VTEMP and MAXOP. This alarm detects the end of life of the laser. V MAXOP TC VTEMP × ( T j – 25 °C ) – I oper(alarm) = N MAXOP × -------------------- R MAXOP -------------------------------------------------------------R VTEMP The resistor RPWA enables pulse width adjustment for optimizing the eye diagram. GND 27 VCCO BIASOUT MODIN MODOUT MON 25 26 2 24 3 23 4 22 TZA3047A 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 28 11 12 13 14 15 laser with monitor diode BIAS GND LA LA LAQ LAQ GND 17 16 PWA CINQ 29 RREF CIN 30 MAXMON TEST 31 VTEMP DINQ 32 MAXOP DIN 1 ALMON VCCD ALOP 3.3 V VCCA ER AVR 3.3 V BIASIN 3.3 V handbook, full pagewidth MDB317 Fig.7 TZA3047A with AC-coupled laser and dual-loop control. 2003 Jun 05 18 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 12.3 TZA3047A; TZA3047B TZA3047B with dual-loop control A simplified application using the TZA3047B with dual-loop control and with a DC-coupled laser at 3.3 V or 5 V laser voltage is illustrated in Fig.8. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The open-drain outputs ALOP and ALMON are short-circuited with pin ENABLE causing an active alarm to disable the bias and modulation current sources. The ALRESET input will reset the alarm latches and enable normal operation. handbook, full pagewidth CINQ GND 27 26 VCCO MON BIASIN MODIN MODOUT BIASOUT 28 25 2 24 3 23 4 22 TZA3047B 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 29 11 12 13 14 15 16 laser with monitor diode BIAS GND LA LA LAQ LAQ GND 17 PWA CIN 30 RREF TEST 31 MAXMON DINQ 32 VTEMP DIN 1 MAXOP VCCD ALMON 3.3 V VCCA ALOP 3.3 V ER AVR 3.3 V or 5 V MDB316 Fig.8 TZA3047B with DC-coupled laser and dual-loop control. 2003 Jun 05 19 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 12.4 TZA3047A; TZA3047B TZA3047B with average loop control A simplified application using the TZA3047B with average loop control and a DC-coupled laser at 3.3 or 5 V laser voltage is illustrated in Fig.9. The ER pin is short-circuited to ground for the average loop control. The average power level is determined by the resistor RAVR. The average loop controls the bias current and the BIASOUT output is connected to the BIASIN input. The modulation current is determined by the MODIN input voltage which is generated by the resistor RMODIN and the 100 µA source current of the MODIN pin. 26 VCCO MON MODIN MODOUT BIASIN 27 25 2 24 3 23 4 22 TZA3047B 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 28 11 12 13 14 15 16 laser with monitor diode BIAS GND LA LA LAQ LAQ GND 17 PWA GND 29 RREF CINQ 30 MAXMON CIN 31 VTEMP TEST 32 MAXOP DIN DINQ 1 ALMON VCCD ALOP 3.3 V VCCA ER AVR 3.3 V BIASOUT 3.3 V or 5 V handbook, full pagewidth MDB315 Fig.9 TZA3047B with DC-coupled laser and average loop control. 2003 Jun 05 20 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 13 BONDING PAD LOCATIONS SYMBOL PAD(2)(3) SYMBOL COORDINATES(1) x y PAD(2)(3) COORDINATES(1) x y LA 39 1099.1 185.4 VCCA 1 −1123.9 +1029.3 LA 40 1099.1 290.5 VCCA 2 −1123.9 +949.3 LA 41 1099.1 370.5 VCCD 3 −1123.9 +844.3 GNDO 42 1099.1 670.8 VCCD 4 −1123.9 +764.3 BIAS 43 1099.0 804.8 DIN 5 −1124.0 +604.3 VCCO 44 1099.0 944.4 DINQ 6 −1124.9 +393.3 VCCO 45 1099.0 1024.4 GNDRF 7 −1123.9 +244.5 ACDC 46 942.5 1124.3 GNDRF 8 −1123.9 +139.4 GNDESD 47 765.0 1123.8 GNDRF 9 −1123.9 +4.7 MON 48 602.1 1123.7 GNDRF 10 −1123.9 −100.3 BIASIN 49 431.7 1123.8 TEST 11 −1123.4 −253.4 BIASOUT 50 267.6 1123.8 CIN 12 −1123.9 −441.2 GNDCCB 51 100.8 1123.8 CINQ 13 −1123.9 −697.1 MODIN 52 −82.7 +1123.8 GNDESD 14 −1123.9 −850.8 GNDCCB 53 −241.1 +1123.8 ALRESET 15 −1123.9 −991.4 54(4) −274.4 +954.4 ENABLE 16 −829.8 −1123.7 MODOUT 55 −487.2 +1123.8 GNDDFT 17 −665.6 −1124.0 ER 56 −645.6 +1123.8 ALOP 18 −504.9 −1124 AVR 57 −802.8 +1123.8 ALMON 19 −267.6 −1124.3 −221.5 −344.4 Notes 20(4) 21 −98.5 −1124.3 i.c. MAXOP i.c. 1. All coordinates are referenced (in µm) to the centre of the die. 22(4) −48.6 −368.4 VTEMP 23 +294.0 −1124.2 MAXMON 24 +466.9 −1124.2 RREF 25 +694.9 −1124.0 3. Recommended order of bonding: all GND first, then VCCA, VCCD and VCCO supplies and finally the input and output pins. GNDRF 26 +860.3 −1124.0 4. Pad is internally connected, do not use. PWA 27 +1098.9 −979.4 GNDO 28 +1099.0 −829.7 LAQ 29 +1099.0 −691.2 LAQ 30 +1099.0 −611.2 LAQ 31 +1099.0 −506.4 LAQ 32 +1099.0 −426.4 GNDO 33 i.c. +1099.8 −247.0 34(4) +839.0 −194.4 GNDO 35 +1099.8 −142.0 GNDO 36 +1099.8 −36.8 LA 37 1099.1 105.4 i.c. 38(4) 839.0 179.6 i.c. 2003 Jun 05 2. All GND connections should be used. 21 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 2.56 mm AVR ER MODOUT GNDCCB MODIN GNDCCB BIASOUT BIASIN MON GNDESD ACDC handbook, full pagewidth 57 56 55 53 52 51 50 49 48 47 46 45 44 VCCO VCCO 3 4 43 BIAS 42 GNDO DIN 5 DINQ 6 GNDRF 7 41 40 39 37 LA LA LA LA GNDRF 8 36 GNDO GNDRF 9 35 GNDO GNDRF 10 33 GNDO TEST 11 CIN 12 CINQ 13 32 31 30 29 LAQ LAQ LAQ LAQ GNDESD 14 28 GNDO ALRESET 15 27 PWA i.c. 38 x 0 0 i.c. 34 y i.c. 20 i.c. 22 16 17 18 19 21 23 24 25 26 ALMON MAXOP VTEMP MAXMON RREF GNDRF TZA3047UH ALOP VCCD VCCD i.c. 54 GNDDFT 1 2 ENABLE VCCA VCCA 2.51 mm MDB319 Fig.10 TZA3047UH die. Table 1 Physical characteristics of the bare die PARAMETER VALUE Glass passivation 0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm of silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 80 × 80 µm (pad size = 90 × 90 µm) Metallization 2.8 µm AlCu Thickness 380 µm nominal Size 2.560 × 2.510 mm (6.43 mm2) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature <440 °C; recommended die attachment is by gluing Attach time <15 s 2003 Jun 05 22 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 14 PACKAGE OUTLINE HBCC32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm x B D b1 SOT560-1 v M C A B w M C ball A1 index area v M C A B w M C b b3 E v M C A B w M C b2 v M C A B w M C detail X x C A e1 B e y v A C e2 E1 e4 1 32 A1 X D1 A2 e3 A 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 b b1 b2 b3 D D1 E E1 e e1 e2 e3 e4 v w x y mm 0.8 0.10 0.05 0.7 0.6 0.35 0.20 0.5 0.3 0.50 0.35 0.50 0.35 5.1 4.9 3.2 3.0 5.1 4.9 3.2 3.0 0.5 4.2 4.2 4.15 4.15 0.2 0.15 0.15 0.05 OUTLINE VERSION SOT560-1 2003 Jun 05 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 00-02-01 03-03-12 MO-217 23 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers To overcome these problems the double-wave soldering method was specifically developed. 15 SOLDERING 15.1 Introduction to soldering surface mount packages If wave soldering is used the following conditions must be observed for optimal results: This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 15.2 – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferably be kept: Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. • below 220 °C for all the BGA packages and packages with a thickness ≥ 2.5mm and packages with a thickness <2.5 mm and a volume ≥350 mm3 so called thick/large packages 15.4 • below 235 °C for packages with a thickness <2.5 mm and a volume <350 mm3 so called small/thin packages. 15.3 Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. 2003 Jun 05 TZA3047A; TZA3047B When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 24 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers 15.5 TZA3047A; TZA3047B Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE(1) WAVE BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable(3) DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not PLCC(4), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP REFLOW(2) suitable suitable suitable not recommended(4)(5) suitable not recommended(6) suitable Notes 1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2003 Jun 05 25 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B 16 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17 DEFINITIONS 18 DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jun 05 26 Philips Semiconductors Product specification 30 Mbits/s up to 1.25 Gbits/s laser drivers Bare die All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. 2003 Jun 05 27 TZA3047A; TZA3047B Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 403510/01/pp28 Date of release: 2003 Jun 05 Document order number: 9397 750 11277