INTEGRATED CIRCUITS DATA SHEET TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers Preliminary specification Supersedes data of 1997 Sep 08 File under Integrated Circuits, IC19 1999 Aug 24 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U FEATURES APPLICATIONS • 622 Mbits/s data input, both Current-Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p) • SDH/SONET STM4/OC12 optical transmission systems • SDH/SONET STM4/OC12 optical laser modules. • Adaptive laser output control with dual loop, stabilizing optical ONE and ZERO levels GENERAL DESCRIPTION The TZA3001AHL, TZA3001BHL and TZA3001U are fully integrated laser drivers for STM4/OC12 (622 Mbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC, the external component count is low. Only decoupling capacitors and adjustment resistors are required. • Optional external control of laser modulation and biasing currents (non-adaptive) • Automatic laser shutdown • Few external components required • Rise and fall times of 120 ps (typical value) • Jitter <50 mUI (p-p) The TZA3001AHL features an alarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC). • RF output current sinking capability of 60 mA • Bias current sinking capability of 90 mA • Power dissipation of 430 mW (typical value) • Low cost LQFP32 plastic package • Single 5 V power supply. The TZA3001BHL is provided with an additional RF data input to facilitate remote (loop mode) system testing. TZA3001AHL The TZA3001U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3001AHL and the TZA3001BHL. • Laser alarm output for signalling extremely low and high bias current conditions. TZA3001BHL • Extra STM4 622 Mbits/s loop mode input; both CML and PECL compatible. TZA3001U • Bare die version with combined bias alarm and loop mode functionality. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TZA3001AHL LQFP32 plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm SOT401-1 TZA3001BHL TZA3001U 1999 Aug 24 − bare die; 2000 × 2000 × 380 µm 2 − Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers BLOCK DIAGRAM ALARM TONE TZERO ALARMLO ALARMHI handbook, full pagewidth 26 4 5 21 18 LASER CONTROL BLOCK DIN DINQ CURRENT SWITCH 29 7 12 15 6 BAND GAP REFERENCE TZA3001AHL 19, 20 27, 30 23 13 data input (differential) 28 2 22 10 31 4 VCC(R) VCC(G) VCC(B) ALS MONIN ONE ZERO LA LAQ BIAS BGAP 1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND MGK271 Fig.1 Block diagram of TZA3001AHL. ENL handbook, full pagewidth TONE 26 TZERO 4 5 2 LASER CONTROL BLOCK DIN DINQ DLOOP DLOOPQ 22 23 ONE ZERO 28 13 29 MUX 19 12 CURRENT SWITCH 15 20 18, 21 27, 30 7 10 31 4 VCC(R) VCC(G) VCC(B) 6 BAND GAP REFERENCE TZA3001BHL ALS 1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND MGK270 Fig.2 Block diagram of TZA3001BHL. 1999 Aug 24 MONIN 3 LA LAQ BIAS BGAP Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers PINNING PIN PAD TZA3001AHL TZA3001BHL TZA3001U SYMBOL GND DESCRIPTION 1 1 1 ground MONIN 2 2 2 monitor photodiode current input GND 3 3 3 ground IGM − − 4 not used; leave unbonded TONE 4 4 5 connection for external capacitor used to set optical ONE control loop time constant (optional) TZERO 5 5 6 connection for external capacitor used to set optical ZERO control loop time constant (optional) BGAP 6 6 7 connection for external band gap decoupling capacitor VCC(G) 7 7 8 supply voltage (green domain) VCC(G) − − 9 supply voltage (green domain) GND 8 8 10 ground GND 9 9 11 ground VCC(B) 10 10 12 supply voltage (blue domain) VCC(B) − − 13 supply voltage (blue domain) GND 11 11 14 ground LAQ 12 12 15 laser modulation output inverted LA 13 13 16 laser modulation output GND 14 14 17 ground BIAS 15 15 18 laser bias current output GND 16 16 19 ground GND 17 17 20 ground GND − − 21 ground ALARMHI 18 − 22 maximum bias current alarm reference level input VCC(R) − 18 23 supply voltage (red domain) VCC(R) 19 − − supply voltage (red domain) DLOOP − 19 24 loop mode data input VCC(R) 20 − − supply voltage (red domain) DLOOPQ − 20 25 loop mode data input inverted VCC(R) − − 26 supply voltage (red domain) ALARMLO 21 − 27 minimum bias current alarm reference level input VCC(R) − 21 − supply voltage (red domain) ONE 22 22 28 optical ONE reference level input ZERO 23 23 29 optical ZERO reference level input GND 24 24 30 ground GND 25 25 31 ground ALARM 26 − 32 alarm output ENL − 26 33 loop mode enable input VCC(R) 27 27 34 supply voltage (red domain) 1999 Aug 24 4 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers PIN PAD TZA3001AHL TZA3001BHL TZA3001U SYMBOL DESCRIPTION data input inverted VCC(R) 30 30 37 supply voltage (red domain) ALS 31 31 38 automatic laser shutdown input GND 32 32 39 ground GND − − 40 ground 28 DIN 31 ALS 32 GND handbook, full pagewidth 25 GND data input 36 26 ALARM 35 29 27 VCC(R) 28 29 29 DINQ 28 DINQ 30 VCC(R) DIN GND 1 24 GND MONIN 2 23 ZERO GND 3 22 ONE TONE 4 21 ALARMLO TZA3001AHL 18 ALARMHI GND 8 17 GND GND GND 16 7 BIAS 15 VCC(G) GND 14 19 VCC(R) LA 13 6 LAQ 12 BGAP GND 11 20 VCC(R) VCC(B) 10 5 9 TZERO MGK273 Fig.3 Pin configuration of TZA3001AHL. 1999 Aug 24 5 Philips Semiconductors Preliminary specification 26 ENL 27 VCC(R) 28 DIN 29 DINQ 30 VCC(R) 31 ALS 32 GND handbook, full pagewidth 25 GND TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers GND 1 24 GND MONIN 2 23 ZERO GND 3 22 ONE TONE 4 TZERO 5 20 DLOOPQ BGAP 6 19 DLOOP VCC(G) 7 18 VCC(R) GND 8 17 GND 21 VCC(R) GND 16 BIAS 15 GND 14 LA 13 LAQ 12 GND 11 VCC(B) 10 GND 9 TZA3001BHL MGK272 Fig.4 Pin configuration of TZA3001BHL. FUNCTIONAL DESCRIPTION The RF path is fully differential and contains a differential preamplifier and a main amplifier. The main amplifier is designed to handle large peak currents required at the output laser driving stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a guaranteed maximum modulation current of 60 mA at pins LA and LAQ. Pin BIAS delivers a guaranteed maximum DC bias current of up to 90 mA for adjusting the optical laser output to a level above its light emitting threshold. The TZA3001AHL, TZA3001BHL and TZA3001U laser drivers accept a 622 Mbits/s STM4 Non-Return to Zero (NRZ) input data stream and generate an output signal with sufficient current to drive a solid state Fabry Perot (FP) or Distributed FeedBack (DFB) laser. They also contain dual loop control circuitry for stabilizing the true laser optical power levels representing logic 1 and logic 0. The input buffers present a high impedance to the data stream on the differential inputs (pins DIN and DINQ). The input signal can be at CML level of approximately 200 mV (p-p) below the supply voltage, or at PECL level up to 800 mV (p-p). The inputs can be configured to accept CML signals by connecting external 50 Ω pull-up resistors between pins DIN and DINQ to VCC(R). If PECL compatibility is required, the usual Thevenin termination can be applied. Automatic laser control A laser with a Monitor PhotoDiode (MPD) is required for the laser control circuit (see Figs 6 and 7). The MPD current is proportional to the laser emission and is applied to pin MONIN. The MPD current range is from 100 to 1000 µA (p-p). The input buffer is optimized to cope with MPD capacitances up to 50 pF. To prevent the input buffer breaking into oscillation with a low MPD capacitance, it is required to increase the capacitance to the minimum value specified in Chapter “Characteristics” by connecting an extra capacitor between pin MONIN and VCC(G). For ECL signals (negative and referenced to ground) the inputs should be AC-coupled to the signal source. If AC-coupling is applied, a constant input signal (either low of high) will bring the device in an undefined state. To avoid this, it is recommended to apply a slight offset to the input stage. The applied offset must be higher than the specified value in Chapter “Characteristics”, but much lower than the applied input voltage swing. 1999 Aug 24 6 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers It should be noted that the MPD current is stabilized, rather than the actual laser optical output power. Deviations between optical output power and MPD current, known as ‘tracking errors’, cannot be corrected. DC reference currents are applied to pins ZERO and ONE to set the MPD reference levels for laser LOW and laser HIGH. A resistor connected between pin ZERO and VCC(R) and a resistor connected between pin ONE and VCC(R) is sufficient, but current DACs can also be used. The voltages on pins ZERO and ONE are held constant at a level of 1.5 V below VCC(R). The reference current applied to pin ZERO is multiplied by 4 and the reference current flowing into pin ONE is multiplied internally by 16. Designing the modulation and bias loop The optical ONE and ZERO regulation loop time constants are determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting external capacitors to pins TZERO and TONE, respectively. The reference current and the resistor for the optical ONE regulation loop (modulation current control) can be calculated using the following formulae: 1 I ONE = ------ × I MPD (ONE) [A] (1) 16 24 1.5 R ONE = ----------- = ------------------------I MPD (ONE) I ONE [Ω] TZA3001AHL; TZA3001BHL; TZA3001U The optical ONE loop time constant and bandwidth can be estimated using the following formulae: τ ONE = ( 40 × 10 (2) – 12 3 80 × 10 + C TONE ) × ---------------------η LASER 1 B ONE = -------------------------2π × τ ONE [s] [ Hz ] (5) (6) The reference current and resistor for the optical ZERO regulation loop (bias current control) can be calculated using the following formulae: 1 [A] I ZERO = --- × I MPD (ZERO) (3) 4 η LASER B ONE = -----------------------------------------------------------------------------------------------– 12 3 2π × ( 40 × 10 + C TONE ) × 80 × 10 1.5 6 R ZERO = -------------- = ---------------------------I ZERO I MPD (ZERO) The optical ZERO loop time constant and bandwidth can be estimated using the following formulae: [Ω] (4) τ ZERO = ( 40 × 10 In these formulae, IMPD(ONE) and IMPD(ZERO) represent the monitor photodiode current during an optical ONE and an optical ZERO, respectively. – 12 1 B ZERO = ---------------------------2π × τ ZERO Example: A laser is operating at optical output power levels of 0.3 mW for laser HIGH and 0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this type of laser are 260 and 30 µA, respectively. 3 50 × 10 + C TZERO ) × ---------------------η LASER [ Hz ] [s] (7) (8) η LASER B ZERO = --------------------------------------------------------------------------------------------------– 12 3 2π × ( 40 × 10 + C TZERO ) × 50 × 10 In this example the reference current is 1 I ONE = ------ × 260 = 16.25 µA and flows into pin ONE. 16 This current can be set using a current source or simply by a resistor of the appropriate value connected between pin ONE and VCC(R). In this example the resistor would be The term ηLASER (dimensionless) in the above formulae is the product of the two terms: 1.5 R ONE = ---------------- = 92.3 kΩ 16.25 • R is the monitor photodiode responsivity. It is the amount of the extra monitor photodiode current in A/W optical output power. • ηEO is the electro-optical efficiency which accounts for the steepness of the laser slope. It is the amount of the extra optical output power in W/A of modulation current optical output power. The reference current at pin ZERO in this example is 1 ˙ µA and can be set using a resistor I ZERO = --- × 30 = 7.5 4 1.5 R ZERO = ---------- = 200 kΩ 7.5 1999 Aug 24 7 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers Example: A laser with an MPD has the following specifications: PO = 1 mW, Ith = 25 mA, ηEO = 30 mW/A, R = 500 mA/W. The term Ith is the required threshold current to switch-on the laser. If the laser operates just above the threshold level, it may be assumed that ηEO around the optical ZERO level is 50% of ηEO around the optical ONE level, due to the decreasing slope near the threshold level. TZA3001AHL; TZA3001BHL; TZA3001U Manual laser override 30 × 10 × 500 × 10 B ONE = -------------------------------------------------------------------- ≈ 750 Hz – 12 3 2π × 40 × 10 × 80 × 10 The automatic laser control function can be overridden by connecting voltage sources to pins TZERO and TONE to take direct control of, respectively, the bias current source and the modulation current source. The control voltages should be in the range from 1.4 to 3.4 V to sweep the modulation current through the range from 1 to 60 mA and the bias current through the range from 1 to 90 mA. These current ranges are guaranteed. Depending on the temperature and manufacturing process spread, current values higher than the specified ranges can be achieved. However, bias and modulation currents in excess of the specified range are not supported and should be avoided. The resulting bandwidth for the optical ZERO regulation loop, without external capacitance, would be: Currents into or out pins TZERO and TONE in excess of 10 µA must be avoided to prevent damage of the circuit. In this example the resulting bandwidth for the optical ONE regulation loop, without external capacitance, would be: –3 –3 –3 –3 0.5 × 30 × 10 × 500 × 10 ≈ 600 Hz B ZERO = ------------------------------------------------------------------------– 12 3 2π × 40 × 10 × 50 × 10 Automatic laser shut-down and laser slow start The laser modulation and bias currents can be rapidly switched off when a HIGH-level (CMOS) is applied to pin ALS. This function allows the circuit to be shut-down in the event of an optical system malfunction. A 25 kΩ pull-down resistor defaults the input of pin ALS to the non active state. It is not necessary to add additional capacitance with this type of laser. Data pattern and bit rate dependency of the control loop When a LOW-level is applied to pin ALS, the modulation and bias current slowly increase to the desired values with the typical time constants of τONE and τZERO, respectively. This can be used as a laser slow start. The constants in Equations (1) and (3) are valid, provided a frequent presence of sufficiently long runs of ‘constant zero’ and ‘constant one’. The longest run of zeros and ones, occurring typically within a single loop time period (τONE and τZERO), must be at least approximately 6 ns (e.g. as provided by the A1/A2 frame alignment bytes for STM4/OC12). In practice, it can be witnessed that the optical extinction ratio will increase if the bit rate is increased. Therefore it is important to use the actual data patterns and bit rate of the final application circuit for adjusting the optical levels. Bias alarm for TZA3001AHL The bias current alarm circuit detects and flags whenever the bias current is outside a predefined range. This feature can detect excessive bias current due to laser aging and laser malfunctioning. The maximum permitted bias current should be applied to pin ALARMHI with an attenuation ratio of 1500; the minimum to pin ALARMLO with an attenuation ratio of 300. Monitoring the bias and modulation current Although not recommended, the bias and modulation currents generated by the laser driver can be monitored by measuring the voltages on pins TZERO and TONE, respectively. The relations between these voltages and the corresponding currents are given as transconductance values and are specified in Chapter “Characteristics”. The voltages on pins TZERO and TONE range from 1.4 to 3.4 V. The impedance connected at these pins should have an extremely high value. It is mandatory to use a CMOS buffer or an amplifier with an input impedance higher than 100 GΩ and an extremely low input leakage current (pA range). 1999 Aug 24 Like the reference currents for the laser current control loop, the alarm reference currents can be set using external resistors connected between pins ALARMHI or ALARMLO and VCC(R). The resistor values can be calculated using the following formulae: 1.5 × 1500 R ALARMHI = ---------------------------[Ω] (9) I BIAS(max) 1.5 × 300 R ALARMLO = -----------------------I BIAS(min) 8 [Ω] (10) Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers Example: The following reference currents are required to limit the bias current range between 6 and 90 mA: To maximize power supply isolation, the MPD cathode on the laser should be connected to VCC(G) and the laser diode anode to VCC(B). It is recommended to provide the laser anode with a separate decoupling capacitor C11. 6 mA I ALARMLO = -------------- = 20 µA and 300 The inverted laser driver modulation pin LAQ is generally not used. To properly balance the output stage, an equalization network Z1 with an impedance comparable to the laser is connected between pin LAQ and VCC(B). 90 mA I ALARMHI = ----------------- = 60 µA 1500 The corresponding resistor values are: 1.5 V × 1500 R ALARMHI = --------------------------------- = 25 kΩ and 90 mA All external components should be SMD, preferably of size 0603 or smaller. The components must be mounted as close to the IC as possible. It is specially recommended to mount the following components very close to the IC: 1.5 V × 300 R ALARMLO = ------------------------------ = 75 kΩ 6 mA • Power supply decoupling capacitors C2, C4 and C6 If the alarm condition is true, the voltage on pin ALARM goes to HIGH-level (CMOS). This signal could be used, for example, to disable the laser driver by driving pin ALS (a latch is needed in between to prevent oscillation). • Input matching network on pins DIN and DINQ • Capacitor C7 on pin MONIN • Output matching network Z1 at the unused output. Loop mode for TZA3001BHL Grounding bare die In the loop mode the total system application can be tested. It allows for uninhibited optical transmission through the fibre front-end (from the photodiode through the transimpedance stage and the data and clock recovery unit, to the laser driver and via the laser back to the fibre). It should be noted that the optical receiver used in conjunction with the TZA3001BHL must have a loop mode output in order to complete the test loop. In addition to the separate VCC domains, the bare die contains three corresponding ground domains. Isolation between the GND domains is limited due to the finite substrate conductance. Mount the die on a, preferably large and highly conductive, grounded die pad. All pads GND have to be bonded to the die pad. The external ground is thus optimally combined with the die ground, avoiding ground bouncing problems. A HIGH-level on pin ENL selects the loop mode. By default pin ENL is pulled at LOW-level by a 25 kΩ pull-down resistor. Layout recommendations Power supply connections Layout recommendations for the TZA3001AHL and TZA3001BHL can be found in application note “AN98090 Fiber optic transceiverboard STM1/4/8, OC3,12,24, FC/GE”. Three separate supply domains [labelled VCC(B), VCC(G) and VCC(R)] are used to provide isolation between the high-current outputs, the PECL or CML inputs, and the monitor photodiode current input. The three domains should be individually filtered before being connected to a central VCC (see Figs 6 and 7). All supply pins need to be connected. The supply levels should be equal and in accordance with the values specified in Chapter “Characteristics”. 1999 Aug 24 TZA3001AHL; TZA3001BHL; TZA3001U 9 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCC supply voltage Vn DC voltage on CONDITIONS −0.5 MAX. UNIT +6 V pin MONIN 1.3 VCC + 0.5 V pins TONE and TZERO −0.5 VCC + 0.5 V pin BGAP −0.5 +3.2 V pin BIAS −0.5 VCC + 0.5 V pins LA and LAQ 1.3 VCC + 0.5 V pin ALS −0.5 VCC + 0.5 V pins ONE and ZERO −0.5 VCC + 0.5 V −0.5 VCC + 0.5 V pin ALARM TZA3001AHL −0.5 VCC + 0.5 V pins ALARMHI and ALARMLO TZA3001AHL −0.5 VCC + 0.5 V pins DLOOP and DLOOPQ TZA3001BHL −0.5 VCC + 0.5 V pin ENL TZA3001BHL −0.5 VCC + 0.5 V pin MONIN −0.5 +2.5 mA pins TONE and TZERO −0.5 +0.5 mA pin BGAP −2.0 +2.5 mA pin BIAS −0.5 +200 mA pins LA and LAQ −0.5 +100 mA pin ALS −0.5 +0.5 mA pins ONE and ZERO −0.5 +0.5 mA pins DIN and DINQ In MIN. DC current on −0.5 +0.5 mA pin ALARM TZA3001AHL −0.5 +10 mA pins ALARMHI and ALARMLO TZA3001AHL −0.5 +0.5 mA pins DLOOP and DLOOPQ TZA3001BHL −0.5 +0.5 mA pin ENL TZA3001BHL −0.5 +0.5 mA pins DIN and DINQ Tamb ambient temperature −40 +85 °C Tj junction temperature −40 +125 °C Tstg storage temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth(j-s) thermal resistance from junction to solder point 15 K/W Rth(j-c) thermal resistance from junction to case 23 K/W 1999 Aug 24 10 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U CHARACTERISTICS VCC = 5 V; Tamb = −40 to +85 °C; all voltages measured with respect to GND. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VCC supply voltage ICC supply current Ptot total power dissipation 4.75 5 5.25 V note 1 − 65 90 mA note 2 − 430 810 mW Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3001BHL); see Fig.5 Vi(p-p) input voltage (peak-to-peak value) VIO differential 100 250 800 mV input offset voltage −25 − +25 mV VI(min) minimum input voltage VCC(R) − 2 − − V VI(max) maximum input voltage − − VCC(R) + 0.25 V Zi input impedance 8 10 12 kΩ for low frequencies; single-ended CMOS inputs: pin ALS (and pin ENL on TZA3001BHL) VIL LOW-level input voltage − − 1.5 V VIH HIGH-level input voltage 3.5 − − V Rpd(ALS) internal pull-down resistance on pin ALS 21 25.5 30 kΩ Rpd(ENL) internal pull-down resistance on pin ENL 15 25 35 kΩ CMOS output: pin ALARM (on TZA3001AHL) VOL LOW-level output voltage IOH = −200 µA 0 − 0.2 V VOH HIGH-level output voltage IOH = 200 µA 4.8 − 5 V 1.5 1.8 2.0 V laser optical ‘0’ 24 − 260 µA laser optical ‘1’ 96 − 1040 µA note 3 30 − 50 pF Monitor photodiode input: pin MONIN VI DC input voltage IMPD monitor photodiode current CMPD monitor photodiode capacitance Control loop reference currents: pins ONE and ZERO Iref(ONE) reference current on pin ONE note 4 6 − 65 µA Vref(ONE) reference voltage on pin ONE referenced to VCC(R) −1.55 −1.5 −1.45 V Iref(ZERO) reference current on pin ZERO note 4 6 − 65 µA Vref(ZERO) reference voltage on pin ZERO referenced to VCC(R) −1.55 −1.5 −1.45 V floating output 1.4 − 3.4 V Control loop time constants: pins TONE and TZERO VTONE voltage on pin TONE gm(TONE) transconductance of pin TONE note 5 − 100 − mA/V VTZERO voltage on pin TZERO floating output 1.4 − 3.4 V gm(TZERO) transconductance of pin TZERO note 6 − 160 − mA/V 1999 Aug 24 11 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers SYMBOL PARAMETER TZA3001AHL; TZA3001BHL; TZA3001U CONDITIONS MIN. TYP. MAX. UNIT Laser modulation outputs: pins LA and LAQ IO modulation output current 3 − 60 mA IO(off) output current during laser shutdown − − 10 µA VO output voltage 2 − 5 V tr current rise time note 8 − 120 300 ps tf current fall time note 8 − 120 300 ps Jo(p-p) intrinsic electrical output jitter (peak-to-peak value) note 9 − − 50 mUI note 10 2.5 − 90 mA − − 10 µA − − 1 µs 1 − 5 V note 7 Bias current output: pin BIAS IO output current IO(off) output current during laser shutdown tres(off) response time after laser shutdown VO output voltage IBIAS = 90 mA; note 11 Alarm threshold inputs: pin ALARMHI and ALARMLO (on TZA3001AHL) Iref(ALARMLO) threshold reference current on pin ALARMLO lower alarm; note 12 6 − 65 µA Vref(ALARMLO) optical reference voltage on pin ALARMLO referenced to VCC(R) −1.55 −1.5 −1.45 V Iref(ALARMHI) threshold reference current on pin ALARMHI higher alarm; note 12 6 − 65 µA Vref(ALARMHI) optical reference voltage on pin ALARMHI referenced to VCC(R) −1.55 −1.5 −1.45 V Notes 1. Remarks to the supply current: a) The value for ICC does not include the modulation and bias currents through pins LA, LAQ and BIAS. b) Typical value for ICC refers to, but does not include, IMOD = 30 mA and IBIAS = 45 mA. c) The maximum value of ICC refers to, but does not include, IMOD = 60 mA and IBIAS = 90 mA. 2. Remarks to the power dissipation: a) The value for Ptot includes the modulation and bias currents through pins LA, LAQ and BIAS. b) The typical value for Ptot is the on-chip dissipation with IMOD = 30 mA and VLA = VLAQ = 2 V, IBIAS = 45 mA and VBIAS = 1 V and typical process parameters. c) The maximum value for Ptot is the on-chip dissipation with IMOD = 60 mA and VLA = VLAQ = 2 V, IBIAS = 90 mA and VBIAS = 1 V and worst case process parameters. 3. The minimum value of the capacitance on pin MONIN is required to prevent instability. 4. The reference currents can be set using a resistor connected between pins ONE or ZERO and VCC (see Section “Automatic laser control”). The corresponding ZERO level MPD current range is from 24 to 260 µA. The ONE level MPD current range is from 96 to 1040 µA. 5. The specified transconductance is the ratio between the modulation current at pins LA or LAQ and the voltage at pin TONE, under small signal conditions. 1999 Aug 24 12 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U 6. The specified transconductance is the ratio between the biasing current at pin BIAS and the voltage at pin TZERO, under small signal conditions. 7. The values indicate the guaranteed interval, i.e. the lowest attainable output current is always lower than 3 mA and the highest output current always higher than 60 mA. 8. The voltage rise and fall times can be larger, due to capacitive effects. Specifications are guaranteed by design and characterization. Each device is tested at full operating speed to guarantee the RF functionality. 9. Measured in a frequency band from 250 kHz to 5 MHz, according to “ITU-T Recommendation G.813”. The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification is guaranteed by design. 10. The values indicate the guaranteed interval, i.e. the lowest output current always is less than 2.5 mA and the highest output current is always more than 90 mA. 11. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH-level) and the extinction of the bias current (at 10% of the original value). 12. The reference currents can be set by using a resistor between VCC(R) and pins ALARMLO or ALARMHI; see Section “Bias alarm for TZA3001AHL” for detailed information. The corresponding range of low-bias thresholds is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA. handbook, full pagewidth VI(max) VCC(R) Vi(p-p) VIO VI(min) MGK274 Fig.5 Logic level symbol definitions for data inputs. 1999 Aug 24 13 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers APPLICATION INFORMATION L1 handbook, full pagewidth C1 C2 22 nF 1 µF L2 VCC C3 1 µF C4 22 nF L3 C5 1 µF C6 22 nF data inputs normal mode (CML/PECL compatible) 4 VCC(G) VCC(B) VCC(R) ALS C7(1) 7 MONIN C8(2) TONE C9(3) TZERO C10 BGAP 22 nF 10 2 19, 20, 27, 30 DINQ 31 29 DIN ALARM 26 28 23 22 4 R2(4) R3(5) R4(5) ZERO ONE TZA3001AHL 5 6 R1(4) 21 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11 18 15 13 BIAS ALARMLO ALARMHI 12 LA R5 18 Ω LAQ Z1(6) L1 C11 MGK276 MPD (1) (2) (3) (4) (5) (6) laser C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”). C8 enhances modulation control loop time constant (optional). C9 enhances bias control loop time constant (optional). R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”). R3 and R4 are used for minimum and maximum bias currents setting (see Section “Bias alarm for TZA3001AHL”). Z1 is required for balancing the output stage (see Section “Power supply connections”). Fig.6 Application diagram showing the TZA3001AHL configured for 622 Mbits/s (STM4/OC12). 1999 Aug 24 14 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers L1 handbook, full pagewidth C1 1 µF C2 22 nF L2 VCC C3 1 µF C4 22 nF L3 C5 1 µF C6 22 nF data inputs normal mode (CML/PECL compatible) 4 VCC(G) VCC(B) VCC(R) ALS C7(1) 7 MONIN C8(2) TONE C9(3) TZERO C10 BGAP 22 nF 10 2 18, 21, 27, 30 31 DINQ 29 DIN ENL 26 28 23 22 4 R2(4) ZERO ONE TZA3001BHL 5 6 R1(4) 20 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11 19 15 13 BIAS LA R3 18 Ω DLOOPQ DLOOP loop mode inputs (CML/PECL compatible) 12 LAQ Z1(5) L1 C11 MGK275 MPD (1) (2) (3) (4) (5) laser C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”). C8 enhances modulation control loop time constant (optional). C9 enhances bias control loop time constant (optional). R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”). Z1 is required for balancing the output stage (see Section “Power supply connections”). Fig.7 Application diagram showing the TZA3001BHL configured for 622 Mbits/s (STM4/OC12). 1999 Aug 24 15 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers BONDING PADS COORDINATES(1) SYMBOL GND COORDINATES(1) SYMBOL PAD X Y 1 −664 −910 VCC(R) PAD X Y 23 +384 +910 MONIN 2 −524 −910 DLOOP 24 +227 +910 GND 3 −367 −910 DLOOPQ 25 +87 +910 IGM 4 −227 −910 VCC(R) 26 −70 +910 TONE 5 −70 −910 ALARMLO 27 −210 +910 TZERO 6 +87 −910 ONE 28 −367 +910 BGAP 7 +244 −910 ZERO 29 −524 +910 VCC(G) 8 +384 −910 GND 30 −681 +910 VCC(G) 9 +524 −910 GND 31 −910 +681 GND 10 +664 −910 ALARM 32 −910 +541 GND 11 +910 −630 ENL 33 −910 +384 VCC(B) 12 +910 −490 VCC(R) 34 −910 +227 VCC(B) 13 +910 −350 DIN 35 −910 +70 GND 14 +910 −210 DINQ 36 −910 −70 LAQ 15 +910 −70 VCC(R) 37 −910 −227 LA 16 +910 +70 ALS 38 −910 −367 GND 17 +910 +210 GND 39 −910 −551 GND 40 −910 −664 BIAS 18 +910 +350 GND 19 +910 +490 Note GND 20 +910 +630 GND 21 +681 +910 ALARMHI 22 +541 +910 1. All x and y coordinates represent the position of the centre of the pad in µm with respect to the centre of the die (see Fig.8). 1999 Aug 24 16 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers ZERO ONE ALARMLO VCC(R) DLOOPQ DLOOP VCC(R) ALARMHI GND 2 mm(1) GND handbook, full pagewidth 30 29 28 27 26 25 24 23 22 21 GND 31 20 ALARM 32 19 GND ENL 33 18 BIAS VCC(R) 34 17 GND DIN 35 GND 16 LA 36 0 15 LAQ VCC(R) 37 y 14 GND ALS 38 13 VCC(B) GND 39 12 VCC(B) GND 40 11 GND x 9 10 GND 8 VCC(G) 7 VCC(G) 6 BGAP 5 TZERO 4 TONE 3 IGM 2 GND GND 1 2 mm(1) 0 TZA3001U MONIN DINQ MGL192 (1) Typical value. Fig.8 Bonding pad locations of TZA3001U. Table 1 Physical characteristics of bare die PARAMETER VALUE Glass passivation 2.1 µm PSG (PhosphoSilicate Glass) on top of 0.7 µm silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm) Metallization 1.2 µm AlCu (1% Cu) Thickness 380 µm nominal Size 2.000 × 2.000 mm (4.000 mm2) Backing silicon; electrically connected to GND potential through substrate contacts Attache temperature <430 °C; recommended die attache is glue Attache time <15 s 1999 Aug 24 17 Philips Semiconductors Preliminary specification TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers PACKAGE OUTLINE SOT401-1 LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm c y X A 17 24 ZE 16 25 e A A2 E HE (A 3) A1 w M pin 1 index θ bp Lp 9 32 L 1 8 detail X ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y mm 1.60 0.15 0.05 1.5 1.3 0.25 0.27 0.17 0.18 0.12 5.1 4.9 5.1 4.9 0.5 7.15 6.85 7.15 6.85 1.0 0.75 0.45 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-12-19 97-08-04 SOT401-1 1999 Aug 24 EUROPEAN PROJECTION 18 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers SOLDERING TZA3001AHL; TZA3001BHL; TZA3001U If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering Manual soldering Conventional single wave soldering is not recommended for surface mount devices () or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. To overcome these problems the double-wave soldering method was specifically developed. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 1999 Aug 24 19 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE REFLOW(1) WAVE BGA, SQFP not suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO suitable suitable(2) suitable suitable suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 1999 Aug 24 20 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. BARE DIE DISCLAIMER All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. 1999 Aug 24 21 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 465012/02/pp24 Date of release: 1999 Aug 24 Document order number: 9397 750 05282