INTEGRATED CIRCUITS DATA SHEET OQ2545HP; OQ2545BHP SDH/SONET STM16/OC48 laser drivers Product specification Supersedes data of 1997 Nov 27 File under Integrated Circuits, IC19 1999 Aug 24 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP FEATURES GENERAL DESCRIPTION • Differential 50 Ω inputs for direct connection to Current-Mode Logic (CML) outputs The OQ2545 is a driver IC intended to be used with a directly modulated laser diode or with an Electro Absorption Modulator (EAM) in SDH/SONET 2.5 Gbits/s optical transmission systems. • Internal retiming to minimize jitter (OQ2545HP only) • Input clock phase margin of 320° at 2.5 Gbits/s (OQ2545HP only) The IC features differential data inputs. Loop mode inputs are provided for system testing, along with an output for continuous monitoring. In addition, the OQ2545HP features differential clock inputs for internal retiming resulting in a better jitter performance. • RF output current sinking capability of 60 mA • Bias output current sinking capability of 100 mA • TTL compatible control inputs • Loop mode for system testing The IC has bias and modulating current outputs, the levels of which can be set separately. As an additional safety measure, the active HIGH-level input for automatic laser shutdown (pin ALS) can be used to switch off the laser modulation and bias currents. • Continuous output monitoring • Power dissipation <1500 mW (for typical application) • Low cost LQFP48 plastic package. Although the IC is intended for 2.5 Gbits/s optical transmission systems, it can be used in any application requiring high current drive at high frequencies. APPLICATIONS • Digital fibre optical modulation driver in STM16/OC48 short, medium and long haul optical transmission systems The IC is transparent from input to output. • Optical modulation driver in high-speed data networks • High current driver for electro-optical converters • High current electrical line driver. ORDERING INFORMATION TYPE NUMBER OQ2545HP OQ2545BHP 1999 Aug 24 PACKAGE NAME LQFP48 DESCRIPTION plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm 2 VERSION SOT313-2 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP BLOCK DIAGRAMS handbook, full pagewidth DIOA DIGITAL SECTION 3 ANALOG SECTION 40 39 DIN DINQ 33 10 MONITOR BUFFER 34 22 DLOOP FF CINQ 30 IBIAS SIBIAS PREAMPLIFIER MODULATION DRIVER 31 5, 6 EMITTER FOLLOWERS 28 CLOOP MONQ 19 OQ2545HP 21 DLOOPQ CIN MON 7, 8 LA LAQ 27 CLOOPQ 18 SIMOD BAND GAP REFERENCE 43 BGCAP 45 ENL 17 SMOD 42 VEE1 16 AMPADJ 15 EFADJ ALS (1) (2) 8 14 VEE2 (1) Pins 1, 12, 13, 24, 25, 36, 37 and 48. (2) Pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47. Fig.1 Block diagram of OQ2545HP. 1999 Aug 24 44 3 GND 46 VCC MGK368 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers handbook, full pagewidth DIOA OQ2545HP; OQ2545BHP DIGITAL SECTION 3 ANALOG SECTION 40 39 DIN DINQ 33 10 MONITOR BUFFER 34 22 DLOOP FF i.c. i.c. i.c. MONQ IBIAS 19 SIBIAS OQ2545BHP 21 DLOOPQ i.c. MON 30 PREAMPLIFIER 31 MODULATION DRIVER 5, 6 EMITTER FOLLOWERS 28 7, 8 LA LAQ 27 18 SIMOD BAND GAP REFERENCE 43 BGCAP 45 ENL 17 SMOD 42 VEE1 16 AMPADJ 15 EFADJ 44 ALS (2) 8 14 VEE2 (1) Pins 1, 12, 13, 24, 25, 36, 37 and 48. (2) Pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47. Fig.2 Block diagram of OQ2545BHP. 1999 Aug 24 (1) 4 GND 46 VCC MGL727 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP PINNING PIN TYPE(1) SYMBOL DESCRIPTION OQ2545HP OQ2545BHP VEE2 1 1 S supply voltage for analog section (−6.5 V) GND 2 2 S ground supply DIOA 3 3 A temperature sensing diode array connection GND 4 4 S ground supply LA 5 5 O laser modulation current output LA 6 6 O laser modulation current output LAQ 7 7 O inverted laser modulation current output LAQ 8 8 O inverted laser modulation current output GND 9 9 S ground supply IBIAS 10 10 O laser bias current control output GND 11 11 S ground supply VEE2 12 12 S supply voltage for analog section (−6.5 V) VEE2 13 13 S supply voltage for analog section (−6.5 V) GND 14 14 S ground supply EFADJ 15 15 AI input for emitter follower current adjustment AMPADJ 16 16 AI input for preamplifier current adjustment SMOD 17 17 I input for data polarity switch SIMOD 18 18 I input for RF modulated output current control SIBIAS 19 19 I input for DC output current control GND 20 20 S ground supply DLOOPQ 21 21 I inverted loop mode data input DLOOP 22 22 I loop mode data input GND 23 23 S ground supply VEE2 24 24 S supply voltage for analog section (−6.5 V) VEE2 25 25 S supply voltage for analog section (−6.5 V) GND 26 26 S ground supply CLOOPQ 27 − I inverted loop mode clock input i.c. − 27 − internally connected; internal resistance of 50 Ω to GND CLOOP 28 − I loop mode clock input i.c. − 28 − internally connected; internal resistance of 50 Ω to GND GND 29 29 S ground supply CIN 30 − I clock input i.c. − 30 − internally connected; internal resistance of 50 Ω to GND CINQ 31 − I inverted clock input i.c. − 31 − internally connected; internal resistance of 50 Ω to GND GND 32 32 S ground supply DIN 33 33 I data input DINQ 34 34 I inverted data input 1999 Aug 24 5 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers PIN OQ2545HP; OQ2545BHP TYPE(1) SYMBOL DESCRIPTION OQ2545HP OQ2545BHP GND 35 35 S ground supply VEE2 36 36 S supply voltage for analog section (−6.5 V) VEE2 37 37 S supply voltage for analog section (−6.5 V) GND 38 38 S ground supply MONQ 39 39 O inverted monitor data output MON 40 40 O monitor data output GND 41 41 S ground supply VEE1 42 42 S supply voltage for digital section (−4.5 V) BGCAP 43 43 A connection for band gap reference decoupling capacitor ALS 44 44 I automatic laser shutdown control input ENL 45 45 I loop mode enable input (active LOW) VCC 46 46 S positive supply voltage for TTL interface (+5 V) GND 47 47 S ground supply VEE2 48 48 S supply voltage for analog section (−6.5 V) Note VEE2 37 VEE2 38 GND 39 MONQ 40 MON 41 GND 42 VEE1 43 BGCAP 44 ALS 45 ENL 46 VCC 48 VEE2 handbook, full pagewidth 47 GND 1. Pin type abbreviations: O = output, I = input, S = power supply and A = analog function. 36 VEE2 1 GND 2 35 GND DIOA 3 34 DINQ GND 4 33 DIN 32 GND LA 5 LA 6 31 CINQ OQ2545HP LAQ 7 30 CIN LAQ 8 29 GND GND 9 28 CLOOP 27 CLOOPQ IBIAS 10 VEE2 24 GND 23 DLOOP 22 DLOOPQ 21 GND 20 SIBIAS 19 SIMOD 18 SMOD 17 AMPADJ 16 25 VEE2 EFADJ 15 VEE2 12 GND 14 26 GND VEE2 13 GND 11 Fig.3 Pin configuration of OQ2545HP. 1999 Aug 24 6 MGK367 Philips Semiconductors Product specification VEE2 37 VEE2 38 GND 39 MONQ 40 MON OQ2545HP; OQ2545BHP 41 GND 42 VEE1 43 BGCAP 44 ALS 45 ENL 46 VCC 48 VEE2 handbook, full pagewidth 47 GND SDH/SONET STM16/OC48 laser drivers 36 VEE2 1 GND 2 35 GND DIOA 3 34 DINQ GND 4 33 DIN 32 GND LA 5 LA 6 31 i.c. OQ2545BHP LAQ 7 30 i.c. LAQ 8 29 GND GND 9 28 i.c. IBIAS 10 27 i.c. VEE2 24 GND 23 DLOOP 22 DLOOPQ 21 GND 20 SIBIAS 19 SIMOD 18 SMOD 17 AMPADJ 16 25 VEE2 EFADJ 15 VEE2 12 GND 14 26 GND VEE2 13 GND 11 Fig.4 Pin configuration of OQ2545BHP. 1999 Aug 24 7 MGL728 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP The signal on pin AMPADJ also controls the shape of the output signal on pins LA and LAQ. FUNCTIONAL DESCRIPTION The OQ2545(B)HP can be divided into two functional blocks (see Fig.1): An independent adjustable on-chip bias current source is provided to drive directly a modulated laser diode. Pin SIBIAS is used to set the bias current level. The output current at pin IBIAS will be approximately 106 times the input current at pin SIBIAS. A similar arrangement is used to control the modulation current at pins LA and LAQ. The output current at pins LA and LAQ is proportional to the input current at pin SIMOD. The coefficient depends on the load impedance on pins LA and LAQ and on the voltage setting of pin SMOD (see section ‘Modulation current setting’). • A digital section on the input side • An analog section on the output side. The data input buffers present an impedance of 50 Ω to the data stream on the differential data inputs (see Fig.5). The input data is then fed to a multiplexer where normal mode (pin ENL = HIGH-level) or loop mode (pin ENL = LOW-level) inputs are selected. For driving an EAM, a second multiplexer inverts the input signals when pin SMOD is connected to VEE1. Pin ALS is a TTL compatible input and at HIGH-level it can be used to switch off all current sources. This function makes it possible to implement safety measures that will switch off the circuit in the event of an optical system malfunction. An external clock (OQ2545HP only) connected to a master-slave flip-flop is then used to retime the data. This reduces jitter on the data signal to a minimum. The preamplifier boosts the signal to a suitable level for the modulation driver. Two emitter followers provide the necessary signal isolation between the preamplifier and the high current modulation driver. The bias currents for the preamplifier and the emitter followers contain an output level dependent component, along with an independent component. The output level dependent component is controlled via the signal on pin SIMOD and the operational amplifier, which also sets the modulation driver level. The independent component is adjusted by means of the signal on pin AMPADJ (preamplifier) and pin EFADJ (emitter followers). The buffered differential 50 Ω outputs (pins MON and MONQ) can be used to monitor the optically modulated data. Loop mode The loop mode is provided for system testing. A LOW-level on pin ENL selects the loop mode. When pin ENL is left open-circuit, it is pulled to a HIGH-level (TTL) by an internal pull-up resistor. handbook, full pagewidth 50 Ω 50 Ω DINQ, DLOOPQ, CINQ, CLOOPQ DIN, DLOOP CIN, CLOOP MGL731 VEE1 Fig.5 Schematic for CML differential inputs. 1999 Aug 24 8 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers Automatic laser shutdown OQ2545HP; OQ2545BHP The opposite is the case with an EAM, where a high current (i.e. a large voltage across the load) activates the EAM, thereby causing a logic LOW. Therefore, an inversion is needed between input and output. This happens in the second multiplexer when pin SMOD is connected to VEE1. When left open-circuit, pin SMOD is pulled-up to ground, which is the laser diode setting. A HIGH-level (TTL) on pin ALS switches off the laser modulation and bias currents. This function allows the circuit to be switched off in the event of an optical system malfunction or for system maintenance. When not connected, pin ALS is pulled to a LOW-level (TTL) by an internal pull-down resistor. Modulation current setting Data monitoring Pin SIMOD is used to adjust the modulation current on pins LA and LAQ (see Fig.6). This is achieved by regulating the internal current mirror, which serves as a reference current for the modulation driver. The reference port of the control operational amplifier is connected to ground through an internal 4 kΩ resistor, thus establishing a ‘virtual earth’ on pin SIMOD (DC level is 0 V). An external (approximately) 4 kΩ resistor connected to an adjustable voltage source is needed to regulate the internal current mirror. This adjustable voltage source can be a part of the laser current control box (see Fig.15). Pins MON and MONQ can be used as data monitor outputs. They need to be AC-coupled, e.g. to a 50 Ω matched RF amplifier with sufficient bandwidth. Output polarity selection Pin SMOD is used to set the correct logic assignment between the data input on pins DIN and DINQ (or pins DLOOP and DLOOPQ) and the data output on pins LA, LAQ, MON and MONQ. This is necessary because a directly modulated laser diode and an EAM have different output voltage requirements. The ratio between the current into pin SIMOD and the total modulation current depends on the polarity setting via pin SMOD. When pin SMOD = 0 V the value of Imod = 92 × ISIMOD (approximately) and whereas pin SMOD = VEE1 the value of Imod = 107 × ISIMOD (approximately). If a laser diode is used and connected between pin LA and ground, a high current through pin LA corresponds to a logic HIGH, while a low current through pin LA corresponds to a logic LOW. handbook, full pagewidth 100 Ω 4 kΩ 100 Ω ISIMOD LA LAQ SIMOD + k × ISIMOD VEE2 − 71 × k × ISIMOD(1) MGL733 (1) k = 1.3 when pin SMOD = 0 V. k = 1.5 when pin SMOD = VEE1. Fig.6 Schematic of laser modulation outputs. 1999 Aug 24 9 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers Due to the internal resistors of 100 Ω between pins LA and LAQ to GND, a part of the total modulation current Imod flows internally (see Fig.7). Therefore the modulation current can be written as: Imod = ILA(int) + ILA(ext). Preamplifier bias current adjustment The bias current for the preamplifier contains a modulation dependent component and a modulation independent component. The modulation dependent current is adjusted via pin SIMOD. The modulation independent current will be adequate under normal circumstances. However, in some applications it may be necessary to customize the shape of the modulation current. This can be done by adjusting the preamplifier bias current via pin AMPADJ. When this pin is left open-circuit, the bias current is 0.5 mA and when this pin is connected to ground, the maximum bias current will be approximately 2.5 mA. A resistor can be connected between pin AMPADJ and ground to adjust the current level within this range. The bias current can be decreased by connecting a resistor between pins AMPADJ and VEE2. However, care should be taken as the preamplifier will not be able to drive the modulation driver when the bias current is too low. I LA ( int ) R LA The ratio is: ----------------- = ---------- where RLA is the external I LA ( ext ) 100 impedance between pins LA and GND. A similar argument holds for pin LAQ, with an external impedance of RLAQ. GND 100 Ω 100 Ω ILA(int) RLA OQ2545HP; OQ2545BHP RLAQ LA ILA(ext) Emitter follower bias current adjustment LAQ − + The bias currents for the emitter followers contain two components: a modulation independent component and a modulation dependent component to be controlled via pin SIMOD. The modulation independent currents (8.2 and 16.4 mA, respectively) are sufficient to ensure the emitter followers operate correctly under normal circumstances. In some applications, however, the eye pattern needs to be optimized. This is achieved by connecting an external resistor between pin EFADJ and ground. When pin EFADJ is connected directly to ground, the maximum currents for the two emitter followers will be approximately 25 and 50 mA, respectively. Because the emitter followers buffer the signal from the preamplifier, the current range to be adjusted via pin EFADJ depends on the setting via pin AMPADJ. Imod OQ2545 MGL734 Fig.7 Total modulation current Imod. Bias current setting An independent adjustable on-chip bias current source is provided for when the IC is driving directly a modulated laser diode. Pin SIBIAS is used to adjust the bias current at pin IBIAS, in a similar arrangement to that used for adjusting the modulation current. The reference port of the control operational amplifier is connected to ground through an internal 4 kΩ resistor, thus establishing a ‘virtual earth’ on pin SIBIAS (DC-level of 0 V). An adjustable voltage source connected to pin SIBIAS through an (approximately) 4 kΩ resistor is used to regulate the internal current mirror. The maximum output current of 100 mA is achieved with an input voltage of 4 V. In this case, the input current at pin SIBIAS is approximately 1 mA. Grounding and power supply decoupling The ground connection on the PCB needs to be a large copper area fill connected to a common ground plane with as low inductance as possible. The large area fill will improve the heat transfer to the PCB and so aiding cooling of the IC. The power supply pins need to be decoupled using chip capacitors mounted as close as possible to the IC. To avoid high frequency resonance, multiple bypass capacitors should not be mounted at the same location. To minimise low frequency switching noise in the vicinity of the IC, the power supply line should ideally be filtered once using an LC circuit with a low cut-off frequency. Band gap decoupling capacitor The band gap voltage on pin BGCAP should be decoupled to VEE1 with an external 10 nF capacitor to minimize noise. It cannot be used as an external reference voltage for other circuits. 1999 Aug 24 10 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers RF connections where IAMPADJ and IEFADJ are the currents through pins AMPADJ and EFADJ, respectively. A coupled stripline or microstrip with an odd mode characteristic impedance of 50 Ω (nominal value) should be used for the differential RF connections on the PCB. This applies to the CML differential line pairs on pins CIN and CINQ, DIN and DINQ, CLOOP and CLOOPQ, DLOOP and DLOOPQ, and MON and MONQ. These figures are valid for nominal supply voltage and temperature and are given for rough indication only. 3. PLA, PLAQ and PIBIAS represent the dissipation in the external load (laser or EAM), caused by the modulation and bias current. The expressions are: PLA = 0.5 × ILA(ext) × VLA, PLAQ = 0.5 × ILAQ(ext) × VLAQ and PIBIAS = IIBIAS × VIBIAS. In addition, the following lines should not differ in length by more than 10 mm: • Lines to pins DIN, DINQ, CIN and CINQ The factor 0.5 represents the fact that, for a (scrambled) random data pattern, the modulation switch will be switched to either side 50% of the time integrated over many cycles. • Lines to pins CLOOP, CLOOPQ, DLOOP and DLOOPQ. ESD protection VLA and VLAQ are the voltages on pins LA and LAQ when the modulation current flows through pins LA and LAQ, respectively and the values depend on the external laser or EAM supply voltage, the forward diode voltage drop and additional loads. In order to achieve high frequency performance, it has been necessary to make adjustments to the standard ESD protection scheme. Inputs on pins DIN, DINQ, CIN, CINQ, DLOOP, DLOOPQ, CLOOP and CLOOPQ and outputs on pins MON and MONQ are protected by a reduced ESD structure. The outputs on pins LA and LAQ have no protection against ESD, so extra care should be taken with these pins. To increase the dissipation in the external load and thereby decreasing the dissipation in the IC, the values of VLA or VLAQ can be increased by adding additional external resistors. A minimum value of VLA and VLAQ is required for proper operation of the IC. Power consumption A similar argument is valid for power consumption due to the bias current. It should be noted that this is important, because it provides an easy way to lower the power dissipation of the IC. The total power consumption of the OQ2545(B)HP depends strongly on the application. A rough guideline is given to estimate the power consumption for a specific application. Example The total power dissipation (Ptot) consists of the following terms: Consider the following example to illustrate the calculation of Ptot. A laser diode operates at 0.3 mW (optical low) and 3 mW (optical high), i.e. an extinction ratio of 10 dB. Ptot = PVEE1 + PVCC + PVEE2 − (PLA + PLAQ + PIBIAS) where For this laser type this requires IBIAS = 20 mA and ILA(ext) = 40 mA (see Fig.8). 1. PVEE1 and PVCC represent the power consumption terms corresponding with the supplies VEE1 and VCC, required for the digital section and the TTL interfaces. These 2 terms are application independent and only depend on the process spread and supply voltages. Values can be found in Chapter “Characteristics”. The series resistance of the laser is 30 Ω. Therefore the I LA ( int ) 30 ratio is: ----------------- = ---------I LA ( ext ) 100 Consequently, a total Imod = (130/100) × 40 = 52 mA will be generated by the IC. 2. PVEE2 = IEE2 × VEE2 represents the power consumption of the analog section, including the modulation current and bias current. It is mainly determined by the magnitude of the modulation current and bias current and the additional biasing currents of the preamplifier and emitter followers. The supply current is the summation: IEE2 = 55 mA + 1.5 × Imod + IIBIAS + 3 × IAMPADJ + 55 × IEFADJ 1999 Aug 24 OQ2545HP; OQ2545BHP The impedance connected to pin LAQ is 30 Ω as well. As a result also ILAQ(ext) = 40 mA and ILAQ(int) = 12 mA (see Fig.9). In first instance the eye pattern is of adequate quality and the preamplifier and emitter follower do not need additional bias current, i.e. pins AMPADJ and EFADJ can be left open-circuit. 11 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers Thermal requirements and cooling The current IBIAS is supplied through an RF choke with a high RF resistance and a low DC resistance (e.g. 5 Ω). When the laser is in the high (emitting) state, the voltage drop across the diode and the modulation current of 40 mA in combination with the bias current of 20 mA through the 30 Ω laser resistance results in: VLA = −1.2 − 30 × (0.040 + 0.020) = −3.0 V The maximum allowed junction temperature for normal operation is 125 °C. With an application specific estimated power dissipation and the maximum ambient temperature, the required thermal resistance from junction to ambient Rth(j-a) can be derived. This value strongly depends on the PCB layout for the IC. It is highly recommended to use copper area fills around the 8 corner leads (pins VEE2) of the IC. If a single copper layer PCB with a copper thickness of 0.034 mm is used, square copper area fills of 10 × 10 mm around the corner leads will result in an approximate value for Rth(j-a) = 35 K/W. This value originates from model calculations and is for indication only. Lower values for Rth(j-a) can be obtained with multilayer PCBs. No current through the 30 Ω resistor gives VLAQ = 0 V. When the laser is in the low (dark) state, the bias current of 20 mA results in VLA = −1.2 − 30 × 0.020 = −1.8 V The modulation current of 40 mA through the 30 Ω resistor sets the value VLAQ = 30 × 0.040 = −1.2 V The RF choke causes VIBIAS to be stationary and equal to the average value of VLA minus the small voltage drop across the choke (bias current of 20 mA through 5 Ω): VIBIAS = 0.5 × (−3.0 − 1.8) − 0.020 × 5 = −2.5 V Table 1 If the required power dissipation is not known, but the maximum ambient temperature is fixed, the maximum allowed dissipation as a function of Rth(j-a) can be derived, Estimate total power consumption PVEE1 70 mA × 4.5 V PVCC 2 mA × 5 V PVEE2 153 mA(1) × 6.5 V PLA 0.5 × 40 mA × 3.0 V PLAQ 0.5 × 40 mA × 1.2 V 24 mW PIBIAS 20 mA × 2.5 V 50 mW Ptot PVEE1 + PVCC + PVEE2 − (PLA + PLAQ + PIBIAS) OQ2545HP; OQ2545BHP 125 – T amb ( max ) namely: P tot = ----------------------------------------R th ( j – a ) 315 mW 10 mW The maximum allowed dissipation to prevent overheating as a function of the thermal resistance that is achieved in the application is shown in Fig.12. 995 mW 60 mW The maximum ambient temperature in this application is 85 °C (i.e. 125 − 85 = 40 °C temperature head room). A low Rth(j-a) is recommended. 1186 mW Note 1. 153 mA = IEE2 (55 + 1.5 × 52 + 20 + 3 × 0 + 55 × 0). handbook, full pagewidth GND 100 Ω 30 Ω 100 Ω LAQ 1.2 V 30 Ω ILA(int) LA laser ILA(ext) IBIAS EMI choke Imod Ibias OQ2545 MGL736 VEE2 Fig.8 Laser high ‘light emitting’. 1999 Aug 24 12 IBIAS Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP handbook, full pagewidth GND 100 Ω 100 Ω 30 Ω ILAQ(int) LAQ ILAQ(ext) 1.2 V 30 Ω laser LA IBIAS IBIAS EMI choke Imod Ibias OQ2545 MGL735 VEE2 Fig.9 Laser low ‘dark’. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VCC supply voltage for TTL interface −0.5 +6.0 V VEE1 supply voltage for digital section −6.0 +0.5 V VEE2 supply voltage for analog section −7.5 +0.5 V Vn DC voltage on pins DIN, DINQ, DLOOP, DLOOPQ, CIN, CINQ, CLOOP and CLOOP −1.0 +0.5 V pins MON and MONQ −2.0 +0.5 V pins ALS and ENL −0.5 VCC + 0.5 V pins EFADJ, APADJ, SIMOD and SIBIAS VEE2 − 0.5 0.5 V pins SMOD and BGCAP VEE1 − 0.5 0.5 V pins LA and LAQ − 80 mA pin IBIAS − 110 mA In DC current on pins MON and MONQ − 20 mA pin DIOA − 10 mA Tj junction temperature − 150 °C Tstg storage temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth(j-s) 1999 Aug 24 PARAMETER thermal resistance from junction to solder point 13 VALUE UNIT 27 K/W Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP CHARACTERISTICS Measured at typical supply voltages; all outputs with 50 Ω load; Tamb = −40 to +85 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VCC supply voltage for TTL interface 4.75 5.0 5.25 V VEE1 supply voltage for digital section −4.75 −4.5 −4.25 V VEE2 supply voltage for analog section −6.85 −6.5 −6.15 V ICC supply current for TTL interface − 2 3 mA IEE1 supply current for digital section OQ2545HP − 70 90 mA OQ2545BHP − 50 70 mA IEE2 supply current for analog section normal operation; note 1 − 275 − mA laser shutdown − 5 8 mA 1984 − mW − 350 − mW P power dissipation maximum bias and − modulation current; note 2 laser shutdown Tamb ambient temperature −40 − +85 °C Tj junction temperature − − 125 °C CML data and clock inputs: pins DIN, DINQ, DLOOP, DLOOPQ, CIN, CINQ, CLOOP and CLOOPQ; note 3 Vi(p-p) input voltage (peak-to-peak value) 100 250 500 mV VIO input offset voltage −25 0 +25 mV VI DC input voltage −600 −200 +250 mV Zi input impedance 40 50 60 Ω − 0.4 0.8 V single-ended TTL input: pin ENL; note 4 VIL LOW-level input voltage VIH HIGH-level input voltage 2.4 4.0 − V IIL LOW-level input current −500 − 0 µA IIH HIGH-level input current 0 − 250 µA TTL input: pin ALS; note 4 VIL LOW-level input voltage − 0.4 0.8 V VIH HIGH-level input voltage 2.4 4.0 − V IIL LOW-level input current −90 − 0 µA IIH HIGH-level input current 0 − 600 µA tres response time − − 1.5 ms − 120 − − diode (SMOD = 0 V) − 92 − − EAM (SMOD = VEE1) − 106 − − note 5 Current source control inputs: pins SIMOD and SIBIAS; note 6 κbias bias current converter coefficient note 7 κmod modulation current converter coefficient note 8 bandwidth of unity gain amplifier note 9 − 10 − MHz ∆G gain peaking note 10 − 1 6 dB SR slew rate − 4 − V/µs B 1999 Aug 24 14 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers SYMBOL PARAMETER OQ2545HP; OQ2545BHP CONDITIONS MIN. TYP. MAX. UNIT Preamplifier adjustment: pin AMPADJ II − − 3 mA − − 3 mA note 11 −2.05 −1.6 −1.25 V note 12 1.6 2.0 2.5 V 5 − 60 mA − 2 mA input control current Emitter follower adjustment: pin EFADJ input control current II Band gap decoupling connection: pin BGCAP VBGCAP band gap decoupling voltage Temperature diodes: pin DIOA VDIOA temperature diode voltage Laser modulation outputs: pins LA and LAQ; note 13 IOL LOW-level output current note 14 IOH HIGH-level output current − IO(off) output current during laser shutdown − − 200 µA VO output voltage −3.5 − 0 V δ duty factor note 15 43 50 57 % tr rise time note 16 − 155 200 ps tf fall time note 16 − 160 200 ps Jo(p-p) output jitter (peak-to-peak value) − 15 40 ps 120 Zo output impedance single-ended 80 100 BR bit rate note 17 − 2.48832 − Ω Gbits/s Bias current output: pin IBIAS IO output current IO(off) output current during laser shutdown VO output voltage note 18 note 19 1 − 100 mA − − 200 µA −5.5 − 0 V Monitor outputs: pins MON and MONQ Vo(p-p) output voltage (peak-to-peak value) 70 115 160 mV VO DC output voltage − −1.4 − V Zo output impedance 40 50 60 Ω single-ended Clock phase margin: pins CIN and CINQ (OQ2545HP only); see Fig.13 Tcy(CIN) CIN cycle time − 402 − ps tsu set-up time 100 20 − ps th hold time 100 20 − ps ϕm clock phase margin 180 320 − deg Notes 1. Value is based on: a) External modulation current of 60 mA through an external load of 33 Ω and an internal modulation current of 20 mA giving a total modulation current of 80 mA. b) Bias current is 100 mA. c) Pins AMPADJ and EFADJ are left open-circuit. 1999 Aug 24 15 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP 2. Value based on: a) External modulation current of 60 mA and internal modulation current of 20 mA giving a total modulation current of 80 mA. b) Bias current is 100 mA; see Section “Power consumption” for details on application specific power dissipation. c) Pins AMPADJ and EFADJ are left open-circuit. d) Pins LA and LAQ both terminated with 33 Ω. 3. See Fig.10 for CML symbol definitions. All CML inputs are terminated internally using 50 Ω on-chip resistors to ground. 4. Since the TTL inputs are static, no timing specifications are given in this data sheet. 5. The response time is the time it takes the laser currents (ILA and IIBIAS) to fall below 1 mA after pin ALS = HIGH-level. 6. The values are valid for capacitive loads of up to 50 pF connected to these input pins; voltage controlled with 3.9 kΩ source resistance. 7. I IBIAS κ bias = ----------------I SIBIAS 8. I mod κ mod = ----------------- where Imod is the total (internal + external) modulation current. I SIMOD 9. The current converters consist of operational amplifiers used as unity gain amplifiers and current mirrors. The specified characteristics apply for the transfer function from pin SIMOD to pins LA and LAQ or from pin SIBIAS to pin IBIAS. 10. Although the operational amplifiers are configured as unity gain amplifiers, the response tends to peak close to the roll-off area. 11. To suppress supply noise in the band gap, an external capacitor of 10 nF can be connected between this pin and VEE1. 12. Three series connected diodes have been integrated for measuring the junction temperature. The anode of this diode array is connected to pin DIOA. The cathode is connected internally to VEE2. With a current of 1 mA, the anode voltage (measured with reference to VEE2) will be somewhere within the specified range, depending on temperature. This voltage will show a −6 mV/°C gradient over temperature. 13. Values are measured electrically and unfiltered (see Fig.11): a) Pins AMPADJ and EFADJ are left open-circuit for all measurements. b) The external load is 33 Ω on pins LA and LAQ. c) The external modulation current is 60 mA. d) Optical rise and fall times, duty factor and jitter depend on the applied filtering and the matching network between pins LA and LAQ and the optical device used. 14. The currents flowing into pins LA and LAQ are not equal to the internal RF modulation current because of an additional current in the internal termination resistance. t WH 15. Duty factor is defined as --------- × 100% The data stream should be ‘010101010101...’ T cy 16. Rise and fall times are between 10% and 90% of the peak values. 17. All RF tests are done at 2.48832 Gbits/s (STM16/OC48 rate). 18. The DC current into pin IBIAS is not equal to the internal DC current because of an additional current from the internal termination resistors. 19. To avoid saturation of the current source on pin IBIAS, the voltage level on pin IBIAS should never be allowed to fall below the specified minimum. 1999 Aug 24 16 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP CML INPUT handbook, full pagewidth VI(max) GND Vi(p-p) VIO VI(min) MGL730 Fig.10 Logic level symbol definitions for CML inputs. MBK077 4 handbook, halfpage Ptot (W) 3 LA, LAQ 50 Ω coax 100 Ω OQ2545 100 Ω tester interface 2 50 Ω 1 OSCILLOSCOPE MGL737 0 10 20 30 R th(j-a) (K/W) 40 Measured at Tamb = 85 °C. Fig.11 Set-up for electrical measurement of RF parameters. 1999 Aug 24 Fig.12 Maximum power dissipation as a function of the thermal resistance. 17 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP TIMING CHARACTERISTICS Input timing (OQ2545HP only) Set-up and hold time definitions are illustrated in Fig.13. The timing characteristics are applicable in both normal and loop modes. Tcy(CIN) handbook, full pagewidth 50% CIN 80 mV DIN MGK369 valid data th tsu Fig.13 CML input timing (OQ2545HP only). Output timing Tcy handbook, full pagewidth tWH tf 90% LA 50% 10% tr MGK370 Jo(p-p) Fig.14 Modulation output timing. 1999 Aug 24 18 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP APPLICATION INFORMATION handbook, full pagewidth optical fibre LASER DIODE optical monitor output COMPENSATION NETWORK 25 Ω LAQ LA 7, 8 CIN LASER CURRENT CONTROL IBIAS 5, 6 Vbias 10 30 3 31 46 CINQ MUX DIN (OQ2535) 33 (1) DINQ 34 42 (2) CLOOP 28 DCR Vmod 0 to 4 V VCC +5 V VEE2 VEE1 −6.5 V 8 −4.5 V GND 14 OQ2545HP CLOOPQ (OQ2541) DIOA 27 DLOOP 22 SIBIAS 3 to 4 kΩ SIMOD 3 to 4 kΩ 19 DLOOPQ 21 18 AMPADJ 16 EFADJ 15 43 40 MON electrical monitor output RF AMP 39 MONQ 45 44 ALS BGCAP 10 nF 17 ENL MGK371 SMOD from main controller module (1) All VEE2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) All GND pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the PCB ground plane. Fig.15 Application schematic OQ2545HP with laser diode. 1999 Aug 24 19 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP handbook, full pagewidth optical fibre LASER DIODE optical monitor output COMPENSATION NETWORK 25 Ω LAQ i.c. i.c. MUX LA 7, 8 LASER CURRENT CONTROL IBIAS 5, 6 30 3 31 46 DIN (OQ2535) 33 (1) DINQ 34 i.c. i.c. DCR (OQ2541) Vbias 10 42 (2) 28 DIOA Vmod 0 to 4 V VCC +5 V VEE2 VEE1 −6.5 V 8 −4.5 V GND 14 OQ2545BHP 27 DLOOP 22 SIBIAS 3 to 4 kΩ SIMOD 3 to 4 kΩ 19 DLOOPQ 21 18 AMPADJ 16 EFADJ 15 43 40 MON electrical monitor output RF AMP 39 MONQ 44 45 ALS BGCAP 17 ENL 10 nF MGL729 SMOD from main controller module (1) All VEE2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) All GND pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the PCB ground plane. Fig.16 Application schematic OQ2545BHP with laser diode. 1999 Aug 24 20 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP handbook, full pagewidth optical monitor output optical fibre EAM LASER DIODE BIAS CURRENT CONTROL 50 Ω LAQ CIN IBIAS LA 7, 8 5, 6 10 30 3 CINQ 31 MUX DIN (OQ2535) 46 33 DINQ (1) 34 42 CLOOP CLOOPQ DCR (OQ2541) DLOOP DLOOPQ 28 (2) OQ2545HP DIOA VCC +5 V VEE2 VEE1 −6.5 V 8 −4.5 V GND 14 27 19 22 21 SIBIAS SIMOD 3 to 4 kΩ Vref 18 AMPADJ 16 EFADJ 15 43 40 MON electrical monitor output RF AMP 39 44 45 ALS MONQ BGCAP 10 nF 17 ENL SMOD MGK372 from main controller module (1) All VEE2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) All GND pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the PCB ground plane. Fig.17 Application schematic OQ2545HP with Electro Absorption Modulator (EAM). 1999 Aug 24 21 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm SOT313-2 c y X 36 25 A 37 24 ZE e E HE A A2 (A 3) A1 w M pin 1 index θ bp Lp L 13 48 1 detail X 12 ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 7.1 6.9 0.5 9.15 8.85 9.15 8.85 1.0 0.75 0.45 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 94-12-19 97-08-01 SOT313-2 1999 Aug 24 EUROPEAN PROJECTION 22 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers SOLDERING OQ2545HP; OQ2545BHP If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering Manual soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. To overcome these problems the double-wave soldering method was specifically developed. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 1999 Aug 24 23 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers OQ2545HP; OQ2545BHP Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE REFLOW(1) WAVE BGA, SQFP not suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not PLCC(3), SO, SOJ suitable suitable(2) suitable suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 24 24 Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers NOTES 1999 Aug 24 25 OQ2545HP; OQ2545BHP Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers NOTES 1999 Aug 24 26 OQ2545HP; OQ2545BHP Philips Semiconductors Product specification SDH/SONET STM16/OC48 laser drivers NOTES 1999 Aug 24 27 OQ2545HP; OQ2545BHP Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 465012/100/02/pp28 Date of release: 1999 Aug 24 Document order number: 9397 750 05482